A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate of GaAs, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer including a beryllium-containing chalcogenide.

A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.

The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be--Se configuration.

Component having an active layer (4), barrier layers (3, 5), and, if appropriate, a buffer layer (2), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate (1) of Gaps, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer (2) including a beryllium-containing chalcogenide.