BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an apparatus and method for performing thin film layer thickness metrology and, more particularly, to an apparatus and method for performing thin film layer thickness metrology on a silicon/silicon dioxide/silicon(Si/SiO.sub.2 /Si) structured semiconductor wafer by illuminating the wafer with a diffuse light source.

2. Description of the Prior Art

In one particular application wherein the present invention is especially practical, a silicon-on-insulator (SOI) semiconductor wafer, typically consisting of an Si/SiO.sub.2 /Si sandwich structure, is fabricated by growing a silicon dioxide(SiO.sub.2) film on one surface of each of two silicon (Si) wafers and bonding the two silicon dioxide film surfaces together at high temperature. This fabrication process usually results in deformations in the shape of the SOI wafer that typicallyrange from 50 to 100 microns. The SOI wafer then undergoes further fabrication processing, wherein an outer surface of one of the two silicon wafers in the sandwich structure is mechanically ground and polished to an average thickness of severalmicrons. This mechanical grinding and polishing unfortunately results in large spatial variations in the thickness of this one silicon wafer, or this one outer silicon layer. These spatial variations can result in local slope variations of up to 1/4 ofa degree along the surface of this outer silicon layer. To reduce these spatial variations, a thickness error map that indicates thickness non-uniformities in this outer silicon layer over the entire wafer surface is required, for example, to initializea subsequent micropolishing process.

A sequence of measuring the spatial variations in the thickness of the outer silicon layer followed by thinning and smoothing the surface of this layer by micropolishing may need to be performed several times before the entire outer silicon layerachieves a desired thickness. In order to reduce costs and increase production, a measurement of at least 400 points on a wafer surface in 60 seconds is desirable.

Current commercial instruments, however, can typically provide a thickness measurement of a thin film layer at only a single point thereon. These instruments use a focused lens or a fiber bundle to locally illuminate a surface of the thin filmlayer with a beam of monochromatic light, and a grating or prism spectrograph to measure the surface spectral reflectance at each point. In all cases, this surface spectral reflectance data must be numerically corrected due to variations in the angle ofincidence caused by the f-,, number of the illuminating beam.

These current commercial instruments may be extended to cover an entire thin film layer, such as an outer silicon layer of an SOI semiconductor wafer, by moving either the measuring instrument or the wafer in a controlled manner. However, thetime required for these instruments to determine the thickness of an outer silicon layer of an SOI semiconductor wafer at a single point thereon is on the order of several minutes, and characterizing the entire outer silicon layer with at least 400measurement points far exceeds the time desired for efficient wafer production. It is therefore desirable to perform thin film layer thickness metrology over an entire thin film layer, such as an entire outer silicon layer of an SOI semiconductor wafer,in an efficient, albeit an economical and highly accurate manner.

SUMMARY OF THE INVENTION

The present invention contemplates an apparatus and method for efficiently determining a thin film layer thickness of, for example, an entire thin film layer of a semiconductor wafer. Non-uniformities in the thickness of this thin film layer areobtained by measuring the reflectance characteristics of a surface of the wafer over its full aperture, and comparing this measured reflectance data to reference reflectance data by using numerical iteration or by using a calibration wafer having knownthin film layer thicknesses.

To efficiently measure the reflectance characteristics over a full aperture of a semiconductor wafer surface, a diffuse illumination scheme is used to produce a beam of polychromatic light having a wide range of angles. This diffusepolychromatic light beam is projected onto an entire surface of the wafer, resulting in coherent interactions in this light as it is reflected between material layer surfaces within the wafer structure. In contrast to the methods used in the previouslyreferenced U.S. patent application Ser. No. 07/804,872, wherein either spatially filtered monochromatic light or spatially filtered polychromatic light is projected onto an entire wafer surface, the present invention provides spatial filtering to thepolychromatic light beam only after it has been reflected from the wafer surface. This diffuse illumination scheme allows light to be reflected from every point on the wafer surface (including all points on the material layer surfaces within the waferstructure) and passed by an on-axis spatial filter regardless of any wafer shape deformations or any wafer surface local slope variations.

After the polychromatic light beam is reflected from the wafer surface and passed through the on-axis spatial filter, it is then passed through a series of narrow band filters. These series of narrow band filters produce a series of spatiallyfiltered monochromatic light beams that are projected onto a detector array of a charge coupled device (CCD) camera. Due to the coherent interactions in the polychromatic light as it is reflected between the material layer surfaces within the waferstructure, a series of monochromatic images of interference fringe patterns are formed on the CCD camera detector array. Each interference fringe pattern image is then captured in full aperture by the CCD camera.

The interference fringe pattern images are captured by digitizing pixels in the CCD camera detector array that correspond to each projected interference fringe pattern image present. A reflectance map of the entire wafer surface is thengenerated from this captured interference fringe pattern image. Several reflectance maps are generated from each measured wafer to eliminate thickness ambiguities which can result from thin film layers having phase thicknesses greater than 2.pi..

The reference reflectance data for a wafer can be obtained theoretically or through the use of a calibration wafer. The theoretical method consists of numerically computing reference reflectance characteristics based on assumed values for theintrinsic optical properties of the wafer materials. Alternatively, a calibration wafer, having a known thin film layer thickness profile, can be fabricated from the same batch of materials used to fabricate the wafer to be measured. By subjecting thiscalibration wafer to the measuring method of the present invention, reference reflectance data is accurately obtained.

The comparison between the measured reflectance data and the reference reflectance data is performed by a computer. Upon performing this comparison, the computer provides a mapping of thin film layer thicknesses or a mapping of thin film layerthickness non-uniformities over the full aperture of the wafer.

A primary objective of the present invention is to provide an efficient means for measuring thin film layer thicknesses.

Other objects and advantages of the present invention will become apparent to those skilled in the art from the following detailed description read in conjunction with the appended claims and the drawings attached hereto.

BRIEFDESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic representation of semiconductor wafer thin film layer thickness measuring instrument using a large collimator lens according to the present invention.

FIG. 2a is an illustration of spatially filtered illumination incident upon a wafer that is deformed in shape and has local slope variations along its surface.

FIG. 2b is an illustration of diffuse illumination incident upon a wafer that is deformed in shape and has local slope variations along its surface.

FIG. 3 is a greatly enlarged illustration of the various layers of an SOI semiconductor wafer.

FIG. 4 is a plan view of a CCD camera detector array showing a wafer image outline and several reference surface image outlines.

FIG. 5 is an illustration of a CCD camera captured digitized interference fringe pattern image of an SOI wafer illuminated with spatially filtered light.

FIG. 6 is an illustration of a CCD camera captured digitized interference fringe pattern image of an SOI wafer illuminated with spatially filtered light while being flattened by a vacuum chuck.

FIG. 7 is an illustration of a CCD camera captured z& interference fringe pattern image of an SOI wafer illuminated with diffuse light according to the present invention.

FIG. 8 is a plan view of an SOI semiconductor calibration wafer having a stepped outer silicon layer surface.

FIG. 9 is a schematic representation of a semiconductor wafer thin film layer thickness measuring instrument using a spherically shaped vacuum chuck according to the present invention.

FIG. 10 is a schematic representation of a semiconductor wafer thin film layer thickness measuring instrument using a parabolic reflector according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 1, there is shown an apparatus, generally indicated by the numeral 1, for measuring a thin film layer thickness of a semiconductor wafer 24. For the purposes of this description, the thickness measurement of an outer siliconlayer thickness of an SOI semiconductor wafer 24 is described. Assume that this SOI semiconductor wafer 24 is deformed in shape and has local slope variations along its outer silicon layer surface as well as along any material layer surfaces within theSOI wafer structure 24.

The apparatus 1 maintains a diffuse source that includes a ground glass screen 14 that is illuminated by white light from a halogen lamp 10 through a fiber optic light guide 12. The ground glass screen 14 scatters the white light, orpolychromatic light, and a condenser lens 16 projects a diffuse polychromatic light beam 17 toward a thin Plate beam splitter 18. The range of angles in the diffuse polychromatic light beam 17 are defined by the diameter of the condenser lens 16 and thedistance to the wafer 24, and larger distortion angles can be provided by auxiliary light sources if required.

The thin plate beam splitter 18 reflects a portion 20 of the diffuse polychromatic light beam 17 toward a first collimator lens 22 that is positioned in front of the SOI wafer 24. The first collimator lens 22 transforms the diverging diffusepolychromatic light beam 20 into a collimated diffuse polychromatic light beam 23 that illuminates the full aperture of the SOI semiconductor wafer 24. This collimated diffuse polychromatic light beam 23 is reflected from the SOI wafer 24 and backthrough the first collimator lens 22 to form a converging diffuse polychromatic light beam 25 that is directed back toward the thin plate beam splitter 18. The thin plate beam splitter 18 transmits a portion 19 of the converging diffuse polychromaticlight beam 25 toward a plate 26 having a circular aperture 27 followed by a second collimator lens 28. The plate 26 and second collimator lens 28 form a spatial filter that transforms the transmitted converging diffuse polychromatic light beam 19 into acollimated spatially filtered polychromatic light beam 29.

The collimated diffuse polychromatic light beam 23 that illuminates the full aperture of the SOI wafer 34 contains a wide range of angles. In comparison, the method described in the previously referenced U.S. patent application Ser. No.07/804,872, illuminated a full aperture of an SOI wafer with a collimated spatially filtered monochromatic light beam or a collimated spatially filtered polychromatic light beam, both having a narrow range of angles. The use of the diffuse beam 23 asopposed to a spatially filtered beam allows significantly more light to be reflected from the SOI wafer 24 at an angle to be passed by the spatial filter 26, 28 when the wafer is deformed in shape or has local slope variations along its surface, which isgenerally the case. This concept is illustrated in FIG. 2.

Referring to FIG. 2a, there is shown a group of incoming rays 70 from a collimated spatially filtered polychromatic light beam or a collimated spatially filtered monochromatic light beam that are incident upon an SOI wafer surface 72 that isdeformed in shape and has local slope variations. The incoming rays 70 are shown to be reflected from the wafer surface 72, thereby producing a group of outgoing rays 74. Due to the wafer surface 72 shape deformations and local slope variations, theoutgoing rays 74 have a wide range of angles, many of which would not be passed by a spatial filter.

Referring to FIG. 2b, however, there is shown, according to the present invention, a group of incoming rays 76 from a collimated diffuse polychromatic light beam 23 that are incident upon the same SOI wafer surface 72 that is deformed in shapeand has local slope variations. These incoming rays 76 are reflected from the wafer surface 72, thereby producing a group of outgoing rays 78. These outgoing rays 78 have a narrow range of angles that will be passed by the spatial filter 26, 28 despitethe wafer surface 72 shape deformations and local slope variations.

Of course, not all of the rays contained in the collimated diffuse polychromatic light beam 23 are reflected in the manner illustrated in FIG. 2. However, as opposed to a collimated spatially filtered light beam, the collimated diffusepolychromatic light beam 23 allows significantly more light to be reflected from the wafer surface 72 at an angle to be passed by the spatial filter 26, 28. As will be shown, the amount of light reflected from the wafer surface 72 and passed by thespatial filter 26, 28 is critical to the accuracy of the thin film layer thickness measurement. It should be noted, that the concept shown in FIGS. 2a and 2b applies to an external wafer surface as well as an internal wafer layer surface.

Referring to FIG. 3, an SOI semiconductor wafer 24 is shown constructed in a sandwich structure with a mechanically polished outer silicon layer 40, an internal silicon dioxide (SiO.sub.2) film 42, and a silicon wafer substrate 44. This sandwichstructure creates three interfaces 46, 48, 50 from which light, incident upon the outer silicon layer 40, may be reflected. The reflectance characteristics of these interfaces 46, 48, 50 are based upon the intrinsic optical and physical properties ofthe materials in each layer 40, 42, 44 of the SOI wafer 24. These properties comprise the absorption coefficient (.alpha.), the index of refraction (n), and the thickness (t) of the material layers 40, 42, 44. For an SOI wafer, it is assumed that theabsorption coefficient (.alpha..sub.1) of the SiO.sub.2 layer 42 is zero. However, in general, it is permissible that the absorption coefficient of the SiO.sub.2 layer 42 be non-zero, provided that it is known.

When an SOI wafer 24 such as that described in FIG. 3 is installed in the apparatus 1 of FIG. 1, and the surface 46 of this SOI wafer 24 is illuminated with the collimated diffuse polychromatic light beam 25, a series of coherent interactionsoccur as this light is reflected between the three material interfaces 46, 48, 50 of the SOI wafer structure 24. These interactions produce wavelength dependent interference fringe pattern images that are contained in the collimated diffusepolychromatic light beam 25 that is reflected back through the first collimator lens 22 and toward the thin plate beam splitter 18. The reflectance at any point on the wafer is determined by the multiple reflections between the three interfaces 46, 48,50 and by the magnitudes of their physical properties (n.sub.1, .alpha..sub.1,t.sub.1,n.sub.2,.alpha..sub.2,t.sub.2,n.sub.3,.alpha..sub.3) . In the unique case of the SOI wafer 24 structure, the substrate 44 indices (n.sub.3,.alpha..sub.3) are identicalto those of the outer silicon layer 40 indices (n.sub.2,.alpha..sub.2) since both are fabricated from single crystal silicon.

The wafer reflectance at any wavelength can be calculated explicitly as a function of the outer silicon layer thickness (t.sub.2) if all the other parameters are known. However, the reverse problem of computing the thickness (t.sub.2) from asingle measured reflectance is ambiguous. This ambiguity is created by the fact that as the outer silicon layer thickness (t.sub.2) is increased, the measured reflectance cycles between maximum and minimum values as the phase thickness (n.sub.2 t.sub.2)increases by multiples of .pi./4. This multiple values problem clearly makes the computation of the value of t.sub.2 from a single reflectance measurement impossible. The use of multiple wavelength measurements can in principle overcome the multiplevalues problem, but the wavelength dependent behavior of the material properties must be very accurately known or otherwise large errors can occur in the thickness computations.

An alternate approach for overcoming the multiple values problem is a statistical one, wherein measured reflectance data at several wavelengths is compared on a least squares best fit basis with a library of computed spectral data at the samewavelengths. In the case of an SOI wafer, the library of spectra is computed for all values of the outer silicon layer thickness (t.sub.2) and the selection is made by choosing that outer silicon layer thickness which minimizes the least squares bestfit.

Referring again to FIG. 1, the collimated spatially filtered polychromatic light beam 29 also contains wavelength dependent interference fringe pattern images due to the coherent interactions in the SOI wafer structure 24, as described. Thiscollimated spatially filtered polychromatic light beam 29 is spec&&y filtered by a series of narrow band filters 38 nominally of 30 to 50 .ANG. half bandwidth. The series of filters 38 are placed around the periphery of a rotating filter wheel assembly37, whereby a corresponding series of collimated monochromatic light beams 35 are produced. The wavelengths of these collimated monochromatic light beams 35 typically range from 550 nm to 950 nm. Locating the filter wheel assembly 37 in the path of thecollimated beam 29 minimizes any spectral broadening in the filtered beam 35 that can be caused by the field angle defined by the size, of the aperture 27. A pair of electronic signals 32 are generated by the filter wheel assembly 37 to serve as atiming reference 33 for a digitizing circuit 34. One of these signals indicates the beginning of a filter wheel revolution, whereas the other signal indicates the beginning of each filter period. Each of the collimated monochromatic light beams 35 isdirected onto a CCD camera detector array 31 where the wavelength dependent interference fringe pattern image contained in each reflected monochromatic light beam 35 is displayed.

Referring to FIG. 4, the CCD camera detector array 31 is shown with an SOI wafer image outline 52, a pair of reference alignment image outlines 54, and a pair of reference reflectance image outlines 56, projected upon its surface. Thesereference images 54, 56 are formed by placing reference alignment marks and reference reflectance surfaces along the same plane as the surface of the SOI wafer 24. When illuminated with the collimated polychromatic light beam 23 from the firstcollimator lens 22, these references provide reflections from their surfaces. Similar to the SOI wafer wavelength dependent interference fringe pattern images, images of these references are contained in the reflected collimated polychromatic light beam25, whereby they are eventually projected onto the CCD camera detector array 31. The reference alignment marks provide aid in wafer alignment, whereas the reference reflectance surfaces serve to normalize the CCD signals so that actual wafer reflectancecan be calculated. As shown, the CCD detector array 31 is made up of a plurality of CCD pixels 57.

Referring back to FIG. 1, the wavelength dependent interference fringe pattern image that is displayed on the CCD camera detector array 31 is captured by the CCD camera 30. A reflectance map is generated by digitizing the CCD pixels 57 thatcorrespond to each displayed wavelength dependent interference fringe pattern image through the use of a digitizing circuit 34. This raw reflectance data can be normalized to eliminate variations in CCD pixel sensitivity and can be reduced in size byaveraging signals from several CCD pixels 57 to match the spatial limitations of any subsequent chemical micropolishing process. Any normalization or reduction of the raw reflectance data is typically performed by a computer 36, as is the method fordetermining the thickness (t.sub.2) of the outer silicon layer 40. The computer 36 can also be used to display digitized interference fringe pattern images captured by the CCD camera 30. The resolution of such a digitized image display reveals theaccuracy of which a thin film layer thickness measurement can be made.

As mentioned previously, the amount of light reflected from the wafer 24 and passed by the spatial filter 26, 28 is critical to the accuracy of the thin film layer thickness measurement. This concept is illustrated in FIGS. 5, 6, and 7 whereinCCD camera 30 captured digitized interference fringe pattern images are shown for various types of illumination of an SOI wafer that 24 is deformed in shape and has local slope variations along its surface.

FIG. 5 shows an image which is the result of a spatially filtered illumination. This type of illumination could be performed by replacing the ground glass screen 14 and condenser lens 16 in FIG. 1 with a condenser lens and an apertured plate,respectively. Notice the severe vignetting of image due to a combination of the shape deformations and local slope variations of the wafer 24 and a loss of spatially filtered light reflected from the wafer 24. This type of illumination was illustratedin FIG. 2a.

FIG. 6 also shows an image resulting from a spatially filtered illumination, but with the wafer 24 flattened by a vacuum chuck to eliminate wafer shape deformations. This image is significantly improved from the image in FIG. 5, but vignettingis still evident around its edges due to local slope variations.

FIG. 7 shows an image resulting from the diffuse illumination scheme according to the present invention. This image was taken when the wafer 24 was free to take its natural shape (i.e. no vacuum chuck flattening). In this case, the edges arewell defined and the image is of higher resolution than the CCD camera 30. Thus, a thin film layer thickness measurement can be made with very high accuracy.

In determining the thickness (t.sub.2) of the outer silicon layer 40 of the SOI wafer 24, either a numerical computation method or a SOI calibration wafer may be used. The numerical method of determining outer silicon layer thickness (t.sub.2)includes assuming values for the thin film constants n.sub.1, .alpha..sub.1, t.sub.1, n.sub.2, .alpha..sub.2, n.sub.3, and .alpha..sub.3, and calculating spectral reflectances for a set of wavelengths corresponding to the collimated monochromatic lightproduced by the narrow band filters 38 in the rotating filter wheel 37. This calculation is done for a number of different outer silicon layer thicknesses (t.sub.2) and, provided that the initial thin film constant assumptions are correct, should onlyneed to be computed once. This calculation provides sets of reflectance values, R.sub.c (.lambda..sub.1, .lambda..sub.2, . . . .lambda..sub.n,t.sub.2), for thicknesses ranging from the thinnest to the thickest estimated value of the outer siliconlayer. These computed spectral reflectance are then compared with the measured reflectance data, R.sub.m (x,y,.lambda..sub.n ), at specific points on the wafer using a root mean square (rms) merit function of the form, ##EQU1## This merit function isevaluated for different values of t.sub.2 until a minimum or best match is found, which in turn indicates the most likely thickness. Of course, other pattern matching merit functions can be used if desired.

Unknown variations in any of the assumed thin film constants may cause errors to propagate through the computation process as outer silicon layer thickness errors. Such first order error sources include the lack of knowledge of the thickness(t.sub.1) of the SiO.sub.2 layer 42 over the wafer aperture and the dispersive effects of the silicon index of refraction (n.sub.1). If the value of the merit function is too large, indicating a poor match, then new computed spectral reflectances willhave to be generated for a closer set of t.sub.2 thicknesses, iterated with the absorption coefficients (.alpha..sub.2,.alpha..sub.3) and the indices of refraction (n.sub.2,n.sub.3) of the outer silicon layer 40 and the silicon substrate 44,respectively, or the index of refraction (n.sub.1) and the thickness (t.sub.1) of the SiO.sub.2 layer 42.

The second method of determining outer silicon layer thickness is to generate a set of spectral reflectances from an SOI calibration wafer 58 having a stepped outer surface, as shown in FIG. 8, wherein each square area 59 of the wafer has adifferent known outer silicon layer thickness. It is preferred that the wafer have at least 500 reference squares to cover the likely range of outer silicon layer thicknesses. This wafer 58 can be calibrated for outer silicon layer thicknesses down tozero silicon thickness by using a stylus profilometer. The calibration wafer 58 is manufactured from the same batch of materials and is subject to the same manufacturing conditions as the wafer 24 under measurement. Consequently, the intrinsic opticalproperties of the calibration wafer such as the absorption coefficient and the index of refraction, and also the dispersive behavior should match those of the wafer 24 being tested.

The spectral reflectances of the calibration wafer 58 are obtained by subjecting this wafer to the measuring method of the present invention. These spectral reflectances are stored in the computer 36 and are used as a reference for comparisonwith the spectral reflectances of a measured SOI wafer 24. The calibration wafer 58 has reference reflectances for at least 500 different outer silicon layer thicknesses and the reference reflectance that most closely matches the reflectance at anypoint on the surface of the measured SOI wafer 24 indicates the outer silicon layer thickness at that point.

Although both of these methods meet the objective of providing a 400 point measurement of outer silicon layer thickness in less than 60 seconds, the calibration wafer method is potentially more accurate than the numerical approach due to thesimilarity of the intrinsic optical properties between the calibration wafer 58 and the SOI wafer 24 to be measured. However, the calibration wafer method would require on-line production capability to generate a new calibration wafer 58 if the basicwafer process is significantly altered.

Using basically the same method of measuring the thickness of a thin film layer as described for the apparatus 1 in FIG. 1, there exist alternate methods for illuminating the SOI wafer 24. FIG. 9 shows an apparatus, generally indicated by thenumeral 2, wherein the wafer 24 is deformed into a reflective condenser. This deformation method is thoroughly described in the related and co-pending U.S. patent application Ser. No. 07/891,344, entitled, Apparatus and Method for Performing Thin FilmLayer Thickness Metrology By Deforming a Thin Film Layer Into a Reflective Condenser, filed May 29, 1992, assigned to the assignee hereof, and hereby incorporated by reference. For the purposes of the present invention, using such a wafer deformationmethod removes the need for the large and somewhat costly first collimator lens 22 as shown in FIG. 1. Briefly, the wafer 24 is deformed into a reflective condenser as it adheres to a vacuum chuck 80 to which a vacuum pump 82 creates a suction. AUother aspects of the apparatus 2 shown in FIG. 9 are identical to the apparatus 1 shown in FIG. 1, and are therefore numerically identified as such.

FIG. 10 shows an apparatus, generally indicated by the numeral 3, wherein the wafer 24 is illuminated with a collimated diffuse polychromatic light beam 90 that is reflected from a reflective parabolic collimator 92. Such a method also removesthe need for the large and somewhat costly first collimator lens 22 as shown in FIG. 1. The wafer 24 reflects the collimated diffuse polychromatic light beam 92 and a reflected collimated diffuse polychromatic light beam 94 is directed from the wafer 24back toward the parabolic reflector 92. All other aspects of the apparatus 3 shown in FIG. 10 are identical to the apparatus 1 shown in FIG. 1, and are therefore numerically identified as such.

It is thus seen that the objectives set forth above are efficiently attained and, since certain changes can be made in the above described apparatuses and methods without departing from the scope of the invention, it is intended that all mattercontained in the above description or shown in the accompanying drawings shall be interpreted as illustrative and not in a limiting sense.

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