Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

The present invention relates to a method for treating plastic substrates structured by means of a laser or generation of seed structures on the surface that are suitable for subsequent metallization. The substrates, after the laser structuring, are brought into contact with a process solution that is suitable for removal of the unintentional deposits that arise during the laser structuring. The treatment of the laser-structured substrates with a mixture of wetting agents and compositions that support the cleaning before metallization leads to sufficient removal of the unintentionally deposited metal seeds, without having a lasting damaging effect on the planned structured surface paths.

An etching composition for non-conductive substrates such as polyester, polyether, polyimide, polyurethane, epoxy resin, polysulfone, polyethersulfone, polyetherimide, and polyamide, comprising a halogenide and/or nitrate of a metal selected from the group consisting of Na, Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ca, Zn, and combinations thereof such as FeCl.sub.3, FeCl.sub.2, TiCl.sub.3, CaCl.sub.2, CuCl.sub.2, CrCl.sub.3, ZnCl.sub.2, MgCl.sub.2, MnCl.sub.2, and Cr(NO.sub.3).sub.3; and a related method for etching.