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current-us-classification:257/E21.266
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Fully siliciding regions to improve performance
US7550808
-
Jun 23, 2009
Method for forming a nitrided germanium-containing layer using plasma processing
US7517818
-
Apr 14, 2009
Integration of silicon boron nitride in high voltage and small pitch semiconductors
US20090057766
-
Mar 05, 2009
Method of forming dielectric layer of semiconductor memory device
US20090053881
-
Feb 26, 2009
Semiconductor device and method for manufacturing the same
US20090039514
-
Feb 12, 2009
Low k dielectric
US20090017272
-
Jan 15, 2009
Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device
US7449372
-
Nov 11, 2008
Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadiendyl precursor
US20080242111
-
Oct 02, 2008
Barrier dielectric stack for seam protection
US20080227247
-
Sep 18, 2008
Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US20080124946
-
May 29, 2008
Method for handling polysilazane or polysilazane solution, polysilazane or polysilazane solution, and method for producing semiconductor device
US20080090988
-
Apr 17, 2008
Dielectric interface for group iii-v semiconductor device
US20070123003
-
May 31, 2007
Method of forming a diffusion barrier
US7202167
-
Apr 10, 2007
Method of depositing low dielectric constant silicon carbide layers
US7200460
-
Apr 03, 2007
Process for passivating polysilicon and process for fabricating polysilicon thin film transistor
US7199063
-
Apr 03, 2007
Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device
US7192540
-
Mar 20, 2007
Method of manufacturing semiconductor device
US7153735
-
Dec 26, 2006
Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US7144606
-
Dec 05, 2006
Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (rvd)
US7129189
-
Oct 31, 2006
Method of depositing low k barrier layers
US7125813
-
Oct 24, 2006
Silicon oxycarbide and silicon carbonitride based materials for mos devices
US7115974
-
Oct 03, 2006
Method for fabricating semiconductor device comprising forming holes in a multi-layer insulating film
US7115518
-
Oct 03, 2006
Nitrogen-free dielectric anti-reflective coating and hardmask
US7105460
-
Sep 12, 2006
Method of forming a semi-insulating region
US7105426
-
Sep 12, 2006
Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device
US20060091382
-
May 04, 2006
In situ deposition of a low k dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US20060089007
-
Apr 27, 2006
Dielectric material having carborane derivatives
US20060071300
-
Apr 06, 2006
Methods for the determination of film continuity and growth modes in thin dielectric films
US20060035393
-
Feb 16, 2006
Copper diffusion deterrent interface
US6987321
-
Jan 17, 2006
Semiconductor device and method for manufacturing same
US20060003599
-
Jan 05, 2006
In situ deposition of a low .kappa. dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6974766
-
Dec 13, 2005
Methods for modulating nuclear receptor coactivator binding
US6965850
-
Nov 15, 2005
Method of fabricating a contact
US6964879
-
Nov 15, 2005
Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
US6951826
-
Oct 04, 2005
Manufacturing method for semiconductor device, and system to which semiconductor is applied
US20050189620
-
Sep 01, 2005
Process for preparing low dielectric constant material
US20050181628
-
Aug 18, 2005
Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
US20050181623
-
Aug 18, 2005
Nitrogen-free dielectric anti-reflective coating and hardmask
US6927178
-
Aug 09, 2005
Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
US6926926
-
Aug 09, 2005
Method of forming a semi-insulating region
US20050170619
-
Aug 04, 2005
Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device
US6924240
-
Aug 02, 2005
Method of forming a semi-insulating region
US20050148207
-
Jul 07, 2005
Method of manufacturing semiconductor device
US20050148139
-
Jul 07, 2005
Fabrication method of semiconductor integrated circuit device
US20050142815
-
Jun 30, 2005
Dual-damascene dielectric structures
US6909190
-
Jun 21, 2005
Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors
US6900481
-
May 31, 2005
[method of fabricating a contact]
US20050106860
-
May 19, 2005
Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US20050101154
-
May 12, 2005
Method of forming a semi-insulating region
US20050085004
-
Apr 21, 2005
Diffusion barrier
US20050042887
-
Feb 24, 2005
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Cluster
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Dielectric (19)
Semiconductor (16)
Layers (12)
Film (8)
Silicon (7)
Deposition (7)
Barrier (6)
Method OF forming A semi-insulating region - method-of-forming-a-semi-insulating-region (4)
Process (3)
Oxide (3)
Method OF fabricating A contact (2)
Interface (2)
Transistors (2)