A light emitting display includes light-emitting devices in which unnecessary layers for the emission operation of the light-emitting device are removed in an emission region, and in a case where a wavelength of a light, of which an interference intensity to the light emitted from an emissive layer constituting the light-emitting device becomes a maximum value at 0 degree of a viewing angle, is .lamda.imax and a wavelength of the light becoming a maximum in a light intensity in relation to the light emitted from the emissive layer is .lamda.emax, a relationship of .lamda.imax<.lamda..lamda.max is satisfied, obtaining a light emitting display with a little variation in color over a wide range of viewing angles.

A display device of the present invention has light-emitting devices making up a plurality of pixels placed in a matrix form. In the display device of the present invention, the light-emitting devices each possesses an emissive layer and a reflective element placed on the rear surface of the emissive layer; the emissive layer possesses at the said of the front side, a polarization separator which separates the light emitted from the emissive layer into two kinds of polarized components by the reflection and the transmission, and phase plate; the emissive layer substantially maintains the sate of the polarization of the light transmitted there-through; the reflective element at least reflects the circularly polarized light impinging in the vertical direction mainly as a circularly polarized light having a reverse helicity direction; and the polarization separator has a reflectance of the wavelength range from 520 nm to 600 nm smaller than a reflectance of range not more than 540 nm.

The present invention provides an image display device, by which it is possible to prevent dielectric breakdown between a bottom electrode and a top electrode (top electrode bus line), which make up thin-film type electron sources, and which is free of display defect and has longer service life.On a cathode substrate 10, a bottom electrode 11, a tunneling insulator 12, and a top electrode 13 are prepared. On a lower layer of the top electrode 13, a top electrode bus line 16 is formed, and the top electrode 13 is reliably connected to the top electrode bus line 16 via a contact electrode 15. A field insulator 12A, a lower layer 14a of the interlayer insulator deposited by sputtering and an upper layer 14b of the interlayer insulator are laminated between the top electrode 13 and the contact electrode and the bottom electrode 11, and the bottom electrode 11 is insulated from the top electrode 13 (top electrode bus line 16).

A liquid crystal display device which favorably displays an image by eliminating irregularities of the .gamma. characteristic for every manufactured liquid crystal panel. In the liquid crystal display device, when a power source is supplied thereto, a display control circuit installed therein reads out gradation voltage data corresponding to the liquid crystal panel stored in a ROM connected to the display control circuit and sets gradation voltages in a gradation voltage setting circuit installed therein. Further, upon receiving external control signals, the display control circuit sets gradation voltages in the gradation voltage setting circuit. When the set gradation voltages are inputted to a source driver section of the liquid crystal display device, the liquid crystal panel is driven and images are displayed thereby.

A display device includes a glass substrate having a gate line, a drain line, a pixel electrode, and a thin film transistor. A silicon nitride film is formed on the glass substrate, and a silicon oxide film is formed on the silicon nitride film. The thin film transistor is formed on the silicon oxide film, and includes a poly-silicon film, a gate electrode which is electrically connected to the gate line, a drain electrode which connected to the drain line, and a source electrode which is electrically connected to the pixel electrode. A gate insulation film is formed between the silicon oxide film and the gate electrode, and an interlayer film is interposed between the gate insulation film and the pixel electrode. The silicon nitride film has a larger film thickness than that of the silicon oxide film, and the films are configured so as to reduce reflection.