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Patent # Description
2017/0125665 MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME
A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on...
2017/0125663 Method of Manufacturing a Magnetoresistive Stack/ Structure using Plurality of Encapsulation Layers
A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second...
2017/0125656 PHONONIC METAMATERIALS COMPRISING ATOMICALLY DISORDERED RESONATORS
Phononic metamaterials and methods for reducing the group velocities and the thermal conductivity in at least partially crystalline base material are provided,...
2017/0125653 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE
A light emitting device includes a substrate; a first frame located on the substrate; a second frame located on the substrate, the second frame being located...
2017/0125647 LIGHT-EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME
A light-emitting diode (LED) package includes an LED chip, a phosphor film adhered to a top surface of the LED chip, and a molding phosphor covering a side...
2017/0125646 OPTOELECTRONIC DEVICE
The invention relates to an optoelectronic component (10) comprising--a radiation-emitting semiconductor chip (2), --a conversion element (8) which is suitable...
2017/0125644 METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
A method of manufacturing a light emitting device, includes: temporarily connecting light emitting elements to a wiring layer through connection members, the...
2017/0125643 Light Emitting Semiconductor Device
A light emitting semiconductor device includes at least one light emitting semiconductor chip having a semiconductor layer sequence, a light outcoupling...
2017/0125642 LIGHT-EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME
The light-emitting element provides: a light-emitting structure, which comprises a first conductive semiconductor layer, an active layer under the first...
2017/0125641 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor...
2017/0125640 LIGHT EMITTING ELEMENT
A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a...
2017/0125639 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first...
2017/0125638 LIGHT EMITTING DEVICE AND LIGHTING APPARATUS HAVING SAME
A light-emitting device discloses a light emitting structure layer including an active layer between first and second conductive semiconductor layers, a first...
2017/0125637 EFFICIENT DUAL METAL CONTACT FORMATION FOR A SEMICONDUCTOR DEVICE
A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device includes depositing a dielectric layer on the n-type layer and the...
2017/0125636 LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING SAME
A light-emitting device according to an embodiment comprises: a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on...
2017/0125630 Four-Element Light Emitting Diode with Transparent Substrate and Preparation Method
A four-element light emitting diode with a transparent substrate, comprising a AlGaInP light emitting diode (LED) epitaxial wafer, and the surface of a GaP...
2017/0125629 LIGHT EMITTING DEVICE, LIGHT SOURCE SYSTEM INCLUDING THE LIGHT EMITTING DEVICE, AND OPTICAL COHERENCE...
The present invention provides a light emitting device which emit light having a high-order level without increasing a current injection density to an active...
2017/0125628 INTEGRATED PHOTODETECTOR WAVEGUIDE STRUCTURE WITH ALIGNMENT TOLERANCE
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a...
2017/0125627 PHOTODIODE STRUCTURES
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further...
2017/0125626 PHOTODIODE STRUCTURES
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further...
2017/0125625 PARTICLE DETECTOR AND METHOD OF MAKING THE SAME
A particle detector includes a support member. A front electrode layer is disposed over the support member. A semiconductor heterojunction is disposed over the...
2017/0125624 Photovoltaic Element with an included Resonator
A photovoltaic element comprises a semiconductor structure comprising a first layer comprised of a first semiconductor material with minimum electromagnetic...
2017/0125623 DEVICE FOR HARVESTING DIRECT LIGHT AND DIFFUSE LIGHT FROM A LIGHT SOURCE
Device for harvesting light from a light source, comprising: First photovoltaic cell having an upper surface, a lower surface, and an array of optical passages...
2017/0125622 PHOTOELECTRIC CONVERSION ELEMENT
Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the...
2017/0125621 MULTI-JUNCTION SOLAR CELL WITH SELF COMPENSATING SUB-CELLS
A semiconductor device is disclosed, and includes a first sub-cell generating a first electrical current, a second sub-cell generating a second electrical...
2017/0125620 ENCAPSULANT OF A PHOTOVOLTAIC MODULE
An encapsulant of a photovoltaic module, intended for coating a photovoltaic cell, having a composition which does not include any cross-linking agent and...
2017/0125601 INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film...
2017/0125571 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A GaN-based enhancement-mode power electronic device and a method for manufacturing the same. The GaN-based enhancement-mode power electronic device comprises:...
2017/0125570 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A compound semiconductor device includes a compound semiconductor layer including an electron transit layer and an electron supply layer above the electron...
2017/0125568 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A compound semiconductor device includes: a substrate; a channel layer over the substrate; a carrier supply layer over the channel layer; a gate electrode, a...
2017/0125566 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A compound semiconductor device includes a compound semiconductor stacked structure, the compound semiconductor stacked structure including: an electron...
2017/0125565 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR, POWER SUPPLY APPARATUS AND HIGH-FREQUENCY AMPLIFIER
A semiconductor device includes a carrier transit layer including a first region and second and third regions having a density of a donor impurity element...
2017/0125562 III-Nitride Bidirectional Device
There are disclosed herein various implementations of a III-Nitride bidirectional device. Such a bidirectional device includes a substrate, a back channel...
2017/0125552 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a fin-shaped structure thereon and the fin-shaped...
2017/0125548 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A semiconductor structure includes a substrate having thereon a dielectric layer. An opening is formed in the dielectric layer. The opening includes a bottom...
2017/0125539 ETCH STOP FOR AIRGAP PROTECTION
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides...
2017/0125536 METHOD OF MODIFYING CAPPING LAYER IN SEMICONDUCTOR STRUCTURE
A method of fabricating the gate structure in a semiconductor device includes forming a gate dielectric layer over a semiconductor substrate. A capping layer...
2017/0125504 DISPLAY UNIT AND ELECTRONIC APPARATUS
There are provided a display unit and an electronic apparatus that are capable of preventing color mixture in adjacent color pixels, and improving color...
2017/0125500 THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT-EMITTING DISPLAY
A thin-film transistor array substrate includes a substrate; a first active layer of a first transistor, which is on the substrate and includes a source...
2017/0125490 PIXEL ARRAY AND DISPLAY PANEL HAVING THE PIXEL ARRAY
The present disclosure relates to a pixel array and a display panel having the pixel panel. The pixel array is formed on a non-rectangular substrate, and...
2017/0125487 ORGANIC LIGHT-EMITTING DEVICE, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS...
An organic light-emitting device and display apparatus, the device including a first electrode; a second electrode facing the first electrode; an emission...
2017/0125469 PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM
A photoelectric conversion device includes a photoelectric conversion unit disposed above a substrate and a reading circuit. The photoelectric conversion unit...
2017/0125451 DISPLAY APPARATUS
A display device includes a substrate including a display region, and a peripheral region that is outside of the display region, a plurality of dummy pads at...
2017/0125446 Semiconductor Device Structure With 110-PFET and 111-NFET Current Flow Direction
A FinFET comprises a hybrid substrate having a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and...
2017/0125435 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a memory device includes first and second fin type stacked structures each includes first to i-th memory strings (i is a natural...
2017/0125425 NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF
A non-volatile memory structure includes a semiconductor substrate and a first layer of a first dopant type in the semiconductor substrate. The non-volatile...
2017/0125423 DYNAMIC RANDOM ACCESS MEMORY
A dynamic random access memory (DRAM) includes a substrate, isolation structures, buried word lines, bit lines, and capacitors. The substrate includes active...
2017/0125418 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SURFACE TREATMENT AND SEMICONDUCTOR DEVICE MANUFACTURED BY...
A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active...
2017/0125415 FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH
A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending...
2017/0125407 INSULATED GATE SEMICONDUCTOR DEVICE WITH SOFT SWITCHING BEHAVIOR
A semiconductor device and a method for producing thereof is provided. The semiconductor device includes a plurality of device cells, each comprising a body...
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