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| Patent # | Description |
|---|---|
| 2017/0133474 |
Semiconductor Device Having a Trench with Different Electrode Materials A semiconductor device includes a semiconductor body having a front side and a back side, and a trench included in the semiconductor body. The trench extends... |
| 2017/0133473 |
SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region.... |
| 2017/0133472 |
LOW-STRESS LOW-HYDROGEN LPCVD SILICON NITRIDE A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000... |
| 2017/0133471 |
HIGH RELIABILITY FIELD EFFECT POWER DEVICE AND MANUFACTURING METHOD
THEREOF The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect... |
| 2017/0133470 |
SEMICONDUCTOR DEVICE A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate... |
| 2017/0133469 |
TRANSPARENT ELECTRODES AND ELECTRONIC DEVICES INCLUDING THE SAME A transparent electrode including: a substrate; a first layer disposed on the substrate, the first layer including a graphene mesh structure, the graphene mesh... |
| 2017/0133468 |
GRAPHENE FET WITH GRAPHITIC INTERFACE LAYER AT CONTACTS A method for forming a graphene FET includes providing a graphene layer having a surface. A first metal layer having a work function <4.3 eV is deposited on... |
| 2017/0133467 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME A semiconductor device includes a semiconductor substrate, and a P-well and an N-type drift region disposed in the semiconductor substrate. The P-well includes... |
| 2017/0133465 |
Method of Forming a Semiconductor Device and Semiconductor Device In accordance with a method of forming a semiconductor device, an auxiliary structure is formed at a first surface of a silicon semiconductor body. A... |
| 2017/0133464 |
SEMICONDUCTOR DEVICE WITH LOW BAND-TO-BAND TUNNELING The invention includes a semiconductor device comprising an interlevel dielectric layer over a buried insulator layer over a semiconductor substrate; a source... |
| 2017/0133463 |
DIELECTRIC ISOLATED SiGe FIN ON BULK SUBSTRATE A method for forming fins on a semiconductor device includes etching trenches into a monocrystalline substrate to form first fins and forming a first... |
| 2017/0133462 |
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising... |
| 2017/0133461 |
DIELECTRIC AND ISOLATION LOWER FIN MATERIAL FOR FIN-BASED ELECTRONICS A dielectric and isolation lower fin material is described that is useful for fin-based electronics. In some examples, a dielectric layer is on first and... |
| 2017/0133460 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF The present invention provides a method for forming a semiconductor structure, including: first, a substrate is provided. Next, at least two gate structures... |
| 2017/0133459 |
NANOSHEET ISOLATION FOR BULK CMOS NON-PLANAR DEVICES A semiconductor structure is provided that includes a semiconductor substrate including a first device region and a second device region. First trench... |
| 2017/0133458 |
LOW COST AND MASK REDUCTION METHOD FOR HIGH VOLTAGE DEVICES Aspects of the present disclosure provides a device comprising a P-type semiconductor substrate, an N-type tub above the semiconductor substrate, a P-type... |
| 2017/0133457 |
SEMICONDUCTOR DEVICES HAVING CHARGED PUNCH-THROUGH STOPPER LAYER TO REDUCE
PUNCH-THROUGH AND METHODS OF... Provided are a semiconductor device having a charged punch-through stopper (PTS) layer to reduce punch-through and a method of manufacturing the same. In an... |
| 2017/0133456 |
SEMICONDUCTOR DEVICE HAVING DIODE CHARACTERISTIC According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed... |
| 2017/0133455 |
Super Junction Field Effect Transistor With Internal Floating Ring A Super Junction Field Effect Transistor (FET) device includes a charge compensation region disposed on a substrate of semiconductor material. The charge... |
| 2017/0133454 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME A semiconductor device is disclosed. In a surface layer of a front surface of an n-type semiconductor substrate, an anode layer is provided in an element... |
| 2017/0133453 |
SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral... |
| 2017/0133452 |
Capacitor and Method for Making Same A system-on-chip (SOC) device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor... |
| 2017/0133451 |
METHOD OF MANUFACTURING ORGANIC EL DISPLAY DEVICE AND ORGANIC EL DISPLAY
DEVICE Provided are an organic EL display device and a method of manufacturing the organic EL display device for preventing damage caused in a process of exposing... |
| 2017/0133450 |
DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is... |
| 2017/0133449 |
DISPLAY DEVICE A flexible display device includes a substrate, a plurality of first pixels, and a plurality of second pixels. The substrate includes a foldable bending region... |
| 2017/0133448 |
ORGANIC LIGHT EMITTING DIODE DISPLAY An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first... |
| 2017/0133447 |
PIXEL CIRCUIT A pixel circuit is provided comprising the following. The first transistor includes a gate electrode and a semiconductor layer comprising a channel region, a... |
| 2017/0133445 |
DISPLAY PANEL A display device including a TFT substrate and a display layer is provided. The TFT substrate includes a substrate, a gate layer, a semiconductor layer, a gate... |
| 2017/0133444 |
ORGANIC LIGHT EMITTING DISPLAY DEVICE An organic light emitting display device includes a substrate, a gate insulation layer, a planarization layer, a boundary pattern, and a sub-pixel structure.... |
| 2017/0133443 |
ORGANIC EL DISPLAY PANEL AND METHOD FOR MANUFACTURING ORGANIC EL DISPLAY
PANEL An organic electroluminescent (EL) display panel which includes: a board; a plurality of planarizing films planarizing unevenness caused by a plurality of... |
| 2017/0133442 |
ORGANIC LIGHT-EMITTING PANEL AND ORGANIC LIGHT-EMITTING DEVICE An object is to provide an organic light-emitting panel and an organic light-emitting device capable of reducing ink repellence at portions of banks... |
| 2017/0133441 |
DISPLAY DEVICE A display device includes: a display panel including a display area for displaying an image; a window provided on an upper portion of the display panel; a... |
| 2017/0133440 |
ARRAY SUBSTRATE, DISPLAY PANEL, DISPLAY DEVICE, AND FABRICATION METHOD
THEREOF An array substrate includes a plurality of first pixel-unit columns and a plurality of second pixel-unit columns repeatedly alternating with each other along a... |
| 2017/0133439 |
NOVEL OLED DISPLAY ARCHITECTURE A device that may be used as a multi-color pixel is provided. The device has a first organic light emitting device, a second organic light emitting device, a... |
| 2017/0133438 |
Light-Emitting Panel, Display Device, and Method for Manufacturing
Light-Emitting Panel A light-emitting panel in which a decrease in aperture ratio accompanied by fabrication of a high-definition panel is suppressed is provided. A light-emitting... |
| 2017/0133437 |
ORGANIC LIGHT-EMITTING DEVICE AND DISPLAY APPARATUS A plurality of light emitters emitting different colors of light in an organic light-emitting device, each light emitter including a first electrode, a first... |
| 2017/0133436 |
OLED TOUCH DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF An organic light-emitting diode (OLED) touch display device and a manufacturing method thereof are provided. The OLED touch display device includes an OLED... |
| 2017/0133435 |
METHOD FOR FORMING PCM AND RRAM 3-D MEMORY CELLS A method for fabricating 3-D cross-point memory arrays, and more particularly to fabricating phase change memory (PCM) and resistive RAM (ReRAM or RRAM) 3-D... |
| 2017/0133434 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device has a resistance change element that is high in the holding resistance of a low resistance (On) state while securing a memory window. In... |
| 2017/0133433 |
SELF-ALIGNED CROSS-POINT PHASE CHANGE MEMORY-SWITCH ARRAY Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of... |
| 2017/0133432 |
SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE A semiconductor memory, including: a first memory cell including a first transistor; a second memory cell including a second transistor; and a memory... |
| 2017/0133431 |
Direct Growth Of Optoelectronic Devices On CMOS Technology With an increasing demand for miniature low power sensors, there is a need to integrate optoelectronic devices with CMOS technology. Deposition of GaAs... |
| 2017/0133429 |
FORMATION OF BURIED COLOR FILTERS IN A BACK SIDE ILLUMINATED IMAGE SENSOR
USING AN ETCHING-STOP LAYER A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed... |
| 2017/0133428 |
RADIOGRAPHIC DETECTION SUBSTRATE AND MANUFACTURE METHOD THEREOF,
RADIOGRAPHIC DETECTION DEVICE A radiographic detection substrate, a manufacture method thereof, and a radiographic detection device are provided. The radiographic detection substrate... |
| 2017/0133426 |
PIXELS WITH PHOTODIODES FORMED FROM EPITAXIAL SILICON An image sensor may include a plurality of pixels that each contain a photodiode. The pixels may include deep photodiodes for near infrared applications. The... |
| 2017/0133424 |
SOLID-STATE IMAGE PICKUP UNIT, METHOD OF MANUFACTURING SOLID-STATE IMAGE
PICKUP UNIT, AND ELECTRONIC APPARATUS A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving... |
| 2017/0133423 |
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC
APPARATUS Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a... |
| 2017/0133422 |
APPARATUS AND SENSOR CHIP COMPONENT ATTACHING METHOD An apparatus includes a lens component and an integrated circuit package. The lens component has a lens and a through hole from a specific surface to a bottom... |
| 2017/0133421 |
SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include... |
| 2017/0133420 |
IMAGE SENSORS WITH COLOR FILTER WINDOWS An imaging pixel may include an upper substrate layer with a photosensitive layer and a lower substrate with a photosensitive layer. A color filter layer may... |
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