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Patent # Description
2017/0148954 LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME
A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface...
2017/0148953 OPTO-ELECTRONIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME
An opto-electronic element according to an exemplary embodiment of the present disclosure includes a transparent conductive layer including a first material...
2017/0148952 THIN-FILM FLIP-CHIP LIGHT EMITTING DIODE HAVING ROUGHENING SURFACE AND METHOD FOR MANUFACTURING THE SAME
A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a...
2017/0148951 EPITAXIAL STRUCTURE AND EPITAXIAL GROWTH METHOD FOR FORMING EPITAXIAL LAYER WITH CAVITIES
An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer...
2017/0148950 OPTOELECTRONIC DEVICE HAVING SEMICONDUCTOR ELEMENTS AND METHOD FOR MANUFACTURING SAME
An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each...
2017/0148949 Nitride Light Emitting Diode Structure
A nitride light-emitting diode (LED) structure includes a substrate, a buffer layer, an N-type layer, a stress release layer, a quantum well light-emitting...
2017/0148948 Nitride Light Emitting Diode
A nitride light emitting diode includes: an n-type nitride layer, a light emitting layer and a p-type nitride layer in sequence, wherein, the light emitting...
2017/0148947 LIGHT EMITTING DEVICE HAVING NITRIDE QUANTUM DOT AND METHOD OF MANUFACTURING THE SAME
Provided are a light emitting device having a nitride quantum dot and a method of manufacturing the same. The light emitting device may include: a substrate; a...
2017/0148946 LIGHT EMITTING DEVICE
In one embodiment, a light emitting device comprises a first light emitting part including at least one light emitting cell; a second light emitting part...
2017/0148945 Method for Manufacturing a Light Emitting Element
A method for manufacturing a light emitting element includes: a GaN layer is formed on an AlN-deposited plain or patterned substrate, and the stress between...
2017/0148944 METHODS OF FORMING SOLAR CELLS WITH FIRED MULTILAYER FILM STACKS
A method of forming a fired multilayer stack are described. The method involves the steps of a) applying a wet metal particle layer on at least a portion of a...
2017/0148943 LOW-COST HIGH-EFFICIENCY SOLAR MODULE USING EPITAXIAL SI THIN-FILM ABSORBER AND DOUBLE-SIDED HETEROJUNCTION...
One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside...
2017/0148942 SOLAR PANEL AND METHOD OF MANUFACTURING SUCH A SOLAR PANEL
A solar panel (1) includes: a plurality of semiconductor substrate based solar cells (2), a transparent front side plate (4), and a rear side plate (6). The...
2017/0148941 METHOD FOR MANUFACTURING SOLAR CELL MODULE
Embodiments include an exemplary method for manufacturing a solar cell module that includes: a front surface-side transparent protective member having a curved...
2017/0148940 CO-EXTRUDED BACKSHEET FOR SOLAR CELL MODULES
This invention relates to a solar-cell module backing layer obtained by co-extruding obtained by melt co-extruding (i) a first polymer composition comprising...
2017/0148939 CEMENTITIOUS PRODUCT SUITABLE IN PARTICULAR AS SUBSTRATE FOR A THIN FILM PHOTOVOLTAIC MODULE, AND METHOD OF...
The present invention relates to a substrate for a thin film photovoltaic module, characterized in that it is a cementitious product with average surface...
2017/0148938 PHOTODETECTORS EXPLOITING ELECTROSTATIC TRAPPING AND PERCOLATION TRANSPORT
This disclosure provides systems, methods, and apparatus related to photodetectors. In one aspect, a photodetector device comprises a substrate, a...
2017/0148937 SOLAR CELLS AND MODULES WITH FIRED MULTILAYER STACKS
Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic...
2017/0148936 ALL-ALUMINUM BACK SURFACE FIELD ALUMINUM PASTE FOR CRYSTALLINE SILICON SOLAR CELL AND PREPARATION METHOD THEREOF
The invention discloses an all-aluminum back surface field aluminum paste for a crystalline silicon solar cell and a preparation method thereof. The...
2017/0148935 SOLAR CELL MODULE
In the solar cell module including a plurality of solar cells interconnected with wiring members, each of the solar cells includes a plurality of front-side...
2017/0148934 FIRING METAL WITH SUPPORT
A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact...
2017/0148933 FIRED MULTILAYER STACKS FOR USE IN INTEGRATED CIRCUITS AND SOLAR CELLS
Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic...
2017/0148932 CAVITATION APPARATUS AND METHOD OF USING SAME
Provided in one embodiment is a method of making, comprising: exposing a raw material having a first viscosity to a first pressure and a first temperature such...
2017/0148931 TRANSPARENT GLASS PANE PROVIDED WITH A SURFACE STRUCTURE
A method of manufacturing a transparent pane, in particular a glass pane, which includes on at least one of its main surfaces a surface structure including an...
2017/0148930 THIN-FILM SEMICONDUCTOR OPTOELECTRONIC DEVICE WITH TEXTURED FRONT AND/OR BACK SURFACE PREPARED FROM ETCHING
An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method...
2017/0148928 SCHOTTKY BARRIER DIODE AND APPARATUS USING THE SAME
A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region...
2017/0148927 DIODE DEVICE AND MANUFACTURING METHOD THEREOF
A diode device and manufacturing method thereof are provided. The diode device includes a substrate, an epitaxial layer, a trench gate structure, a Schottky...
2017/0148926 ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of...
2017/0148925 SEMICONDUCTOR DEVICE
A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an...
2017/0148924 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND ORGANIC EL DISPLAY DEVICE
A thin film transistor includes: a gate electrode; a gate insulating layer above the gate electrode; an oxide semiconductor layer disposed above the gate...
2017/0148923 PERFECTLY SHAPED CONTROLLED NANOWIRES
A fin stack structure is provided on an insulator layer. The fin stack structure comprises, from bottom to top, a first semiconductor fin portion, a dielectric...
2017/0148922 STACKED INDEPENDENTLY CONTACTED FIELD EFFECT TRANSISTOR
A semiconductor device including: a substrate; a first active layer on the substrate and including a first channel between a source and a drain; a second...
2017/0148921 TFT, Array Substrate And Method of Forming the Same
The present invention proposes a TFT, an array substrate, and a method of forming a TFT. The TFT includes a substrate, a buffer layer, a patterned poly-si...
2017/0148920 THIN FILM TRANSISTOR, FABRICATING METHOD THEREOF, AND DISPLAY DEVICE
A thin film transistor (TFT), a method for fabricating the TFT, and a display device are provided. The TFT comprises a first gate electrode and a second gate...
2017/0148919 SEMICONDUCTOR CIRCUIT ELEMENT
A semiconductor circuit element includes a first semiconductor device positioned in and above a first active region of a semiconductor substrate and a second...
2017/0148918 MATERIALS FOR TENSILE STRESS AND LOW CONTACT RESISTANCE AND METHOD OF FORMING
The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed...
2017/0148917 Method for Fabricating a Strained Structure and Structure Formed
A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the...
2017/0148916 FIN REPLACEMENT IN A FIELD-EFFECT TRANSISTOR
In a method for fabricating a field-effect transistor (FET) structure, forming a fin on a semiconductor substrate. The method further includes forming a gate...
2017/0148915 SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURVED SIDE-WALL INSULATING FILM AND...
A semiconductor device including a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region...
2017/0148914 SEMICONDUCTOR DEVICE
A semiconductor device includes an active pattern having sidewalls defined by a device isolation pattern disposed on a substrate and an upper portion...
2017/0148913 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A semiconductor device includes a pillar-shaped semiconductor layer and a first gate insulating film around the pillar-shaped semiconductor layer. A metal gate...
2017/0148912 III-NITRIDE FIELD-EFFECT TRANSISTOR WITH DUAL GATES
A field effect transistor (FET) includes a III-nitride channel layer, a III-nitride barrier layer on the channel layer, a first dielectric on the barrier...
2017/0148911 METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN
The present disclosure relates to a transistor device having a field plate, and a method of formation. In some embodiments, the transistor device has a gate...
2017/0148910 TERMINATION DESIGN FOR HIGH VOLTAGE DEVICE
The present disclosure describes a termination structure for a high voltage semiconductor transistor device. The termination structure is composed of at least...
2017/0148909 SEMI-FLOATING-GATE DEVICE AND ITS MANUFACTURING METHOD
The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a...
2017/0148908 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device according to an embodiment includes a first GaN based semiconductor layer of a first conductive type, a second GaN based semiconductor...
2017/0148907 SEMICONDUCTOR DEVICE INCLUDING A STACKED WIRE STRUCTURE
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a stacked wire structure formed over the substrate....
2017/0148906 NORMALLY-OFF TRANSISTOR WITH REDUCED ON-STATE RESISTANCE AND MANUFACTURING METHOD
A normally-off electronic device, comprising: a semiconductor body including a heterostructure that extends over a buffer layer; a recessed-gate electrode,...
2017/0148905 ISOLATED III-N SEMICONDUCTOR DEVICES
A semiconductor device with a substrate, a low defect layer formed in a fixed position relative to the substrate, and a barrier layer comprising III-N...
2017/0148904 Power Semiconductor Transistor Having Increased Bipolar Amplification
A transistor includes first and second load terminals and a semiconductor body coupled to both terminals. The semiconductor body includes: a drift region...
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