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Patent # Description
2017/0148903 MAGNETIC STATE ELEMENT AND CIRCUITS
Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to...
2017/0148902 Method Of Manufacturing A Non-volatile Memory Cell And Array Having A Trapping Charge Layer In A Trench
A memory cell formed by forming a trench in the surface of a substrate. First and second spaced apart regions are formed in the substrate with a channel region...
2017/0148901 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING PLASMA DOPING PROCESS AND SEMICONDUCTOR DEVICE MANUFACTURED...
A method of manufacturing a semiconductor device includes forming a preliminary fin-type active pattern extending in a first direction, forming a device...
2017/0148900 DUAL FILL SILICON-ON-NOTHING FIELD EFFECT TRANSISTOR
A patterned stack of a first silicon-germanium alloy nanowire, a second silicon-germanium alloy nanowire, and a silicon-containing nanowire is formed on a...
2017/0148899 Method and Structure for Straining Carrier Channel in Vertical Gate All-Around Device
Method and structure for enhancing channel performance in a vertical gate all-around device, which provides a device comprising: a source region; a drain...
2017/0148898 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes forming a first insulating film around a fin-shaped semiconductor layer and forming a pillar-shaped...
2017/0148897 VERTICAL TRANSISTOR WITH AIR-GAP SPACER
A vertical transistor has a first air-gap spacer between the gate and the bottom source/drain, and a second air-gap spacer between the gate and the contact to...
2017/0148896 FABRICATION PROCESS FOR MITIGATING EXTERNAL RESISTANCE OF A MULTIGATE DEVICE
A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material,...
2017/0148895 POC PROCESS FLOW FOR CONFORMAL RECESS FILL
A method of filling trenches between gates includes forming a first and a second dummy gate over a substrate, the first and second dummy gates including a...
2017/0148894 REPLACEMENT LOW-K SPACER
A semiconductor structure formed based on forming a dummy gate stack on a substrate including a sacrificial spacer on the peripheral of the dummy gate stack....
2017/0148893 Method of Manufacturing a Semiconductor Device Having Electrode Trenches, Isolated Source Zones and Separation...
A method of manufacturing a semiconductor device includes forming electrode trenches in a semiconductor substrate between semiconductor mesas that separate the...
2017/0148892 STABLE WORK FUNCTION FOR NARROW-PITCH DEVICES
A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on...
2017/0148891 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a...
2017/0148890 STABLE WORK FUNCTION FOR NARROW-PITCH DEVICES
A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on...
2017/0148889 METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR POWER DEVICE WITH MULTI GATES CONNECTION
A metal oxide semiconductor field effect transistor (MOSFET) power device with multi gates connection includes a first-conductive type substrate, a ...
2017/0148888 METAL-INSULATOR-SEMICONDUCTOR (MIS) CONTACTS AND METHOD OF FORMING
A semiconductor device containing a metal-insulator-semiconductor (MIS) contact and method of forming are described. The method includes providing a...
2017/0148887 Method of Manufacturing a Semiconductor Device Having a Trench at Least Partially Filled with a Conductive...
A method of manufacturing a semiconductor device includes forming a first trench in a semiconductor substrate from a first side, forming a semiconductor layer...
2017/0148886 SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral...
2017/0148885 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one...
2017/0148884 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE HAVING THE SAME, AND FABRICATING METHOD THEREOF
The present application discloses a thin film transistor comprising active layer on a base substrate; an insulating layer over fee active layer, the insulating...
2017/0148883 SEMICONDUCTOR DEVICE AND METHOD
A semiconductor device includes a device region including a compound semiconductor material and a non-device region at least partially surrounding the device...
2017/0148882 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device having a voltage resistant structure in a first aspect of the present invention is provided, comprising a semiconductor substrate, a...
2017/0148881 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
Semiconductor devices and methods for manufacturing the same are provided. An example method may include: forming a sacrificial gate stack on a substrate;...
2017/0148880 LAYERED BODY AND ELECTRONIC ELEMENT
A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the...
2017/0148879 INTEGRATED CIRCUIT STRUCTURE AND METHOD WITH SOLID PHASE DIFFUSION
A method includes forming fin semiconductor features on a substrate. A dopant-containing dielectric material layer is formed on sidewalls of the fin...
2017/0148878 BI-MODE INSULATED GATE TRANSISTOR
The present invention discloses a bi-mode insulated gate transistor, belonging to the technical filed of IGBTs. The bi-mode insulated gate transistor includes...
2017/0148877 SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN
A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper...
2017/0148876 VERTICAL TRANSISTOR WITH AIR-GAP SPACER
A vertical transistor has a first air-gap spacer between a gate and a bottom source/drain region, and a second air-gap spacer between the gate and the contact...
2017/0148875 FABRICATING TWO-DIMENSIONAL ARRAY OF FOUR-TERMINAL THIN FILM DEVICES WITH SURFACE-SENSITIVE CONDUCTOR LAYER
A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first...
2017/0148874 MIDDLE-OF-LINE (MOL) CAPACITANCE REDUCTION FOR SELF-ALIGNED CONTACT IN GATE STACK
A semiconductor structure formed based on selectively recessing a middle-of-line (MOL) oxide layer of the semiconductor structure including multiple gate...
2017/0148873 POWER SEMICONDUCTOR DEVICE
A power semiconductor device includes: a substrate; an anode electrode and a cathode electrode disposed on the substrate; a well region disposed inside the...
2017/0148872 Field-Effect Semiconductor Device Having Pillar Regions of Different Conductivity Type Arranged in an Active Area
In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are...
2017/0148871 MOSFET HAVING DUAL-GATE CELLS WITH AN INTEGRATED CHANNEL DIODE
A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region....
2017/0148870 POWER SEMICONDUCTOR DEVICE
A power semiconductor device includes a substrate, a main body, and an electrode unit. The main body includes an active portion disposed on the substrate, an...
2017/0148869 INTEGRATED CIRCUIT COMPRISING A METAL-INSULATOR-METAL CAPACITOR AND FABRICATION METHOD THEREOF
The disclosed technology relates to a metal-insulator-metal capacitor (MIMCAP) integrated as part of a back-end-of-line of an integrated circuit (IC). In one...
2017/0148868 FORMATION OF DRAM CAPACITOR AMONG METAL INTERCONNECT
Techniques are disclosed for integrating capacitors among the metal interconnect for embedded DRAM applications. In some embodiments, the technique uses a wet...
2017/0148867 ETCHSTOP LAYERS AND CAPACITORS
Capacitor structures for integrated circuit devices are provided. Capacitors include proximate dense or highly dense etchstop layers. The dense or highly dense...
2017/0148866 DISPLAY DEVICE
Display of a display device is made less likely to appear divided when a plurality of display panels are used as one screen. Provided is a display device...
2017/0148865 ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the display includes a plurality of pixel...
2017/0148864 ARRAY SUBSTRATE, FABRICATING METHOD THEREOF, AND DISPLAY DEVICE
An array substrate, a method for fabricating the array substrate, and a related display device are provided. The array substrate comprises: a base substrate...
2017/0148863 ORGANIC LIGHT-EMITTING DIODE DISPLAY
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate, an interlayer insulating layer arranged over...
2017/0148862 ARRAY SUBSTRATE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE
An array substrate, a display device, and a method for manufacturing the array substrate are disclosed. The array substrate comprises a base substrate, a...
2017/0148861 ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate having a main surface and a pixel provided...
2017/0148860 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device including a substrate, a first semiconductor element, a first lower electrode, a protection member, a first light...
2017/0148859 DISPLAY DEVICE
A display device includes a substrate that is formed of a plurality of layers stacked together and a circuit layer. A circuit layer includes a display element...
2017/0148858 Array Substrate and Display Device
The present invention relates to an array substrate and a display device. The array substrate comprises a first thin film transistor arranged on a non-display...
2017/0148857 DISPLAY DEVICE
A bent part is prevented from being damaged by preventing displacement of a bend. A display device includes a circuit substrate having a flat part and a bent...
2017/0148856 ORGANIC LIGHT-EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display including a substrate, an insulating layer on the substrate, the substrate and the insulating layer having an opening...
2017/0148855 DISPLAY UNIT AND ELECTRONIC APPARATUS
A display unit includes a display region, a peripheral region, an insulating layer, a separating groove, and a sealing section. A plurality of pixels are...
2017/0148854 OLED Display Panel
The present invention discloses an OLED display panel, which is achieved by providing an electron cushion layer between the blue sub-pixel light emitting layer...
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