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Patent # Description
2017/0186629 SYSTEM AND METHOD FOR REMOVING COATING FROM AN EDGE OF A SUBSTRATE
A coating-removal apparatus may include a source positioned on a mounting plate, and operable to emit a laser beam at a first path, where the mounting plate is...
2017/0186628 Integrated heat spreader having electromagnetically-formed features
Integrated heat spreaders having electromagnetically-formed features, and semiconductor packages incorporating such integrated heat spreaders, are described....
2017/0186627 SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR ELEMENTS
A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first...
2017/0186626 METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR
A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active...
2017/0186625 ETCHING METHOD AND SUBSTRATE
Disclosed is an etching method and a substrate. The etching method comprises: putting a substrate to be etched, which is coated with a photoresist layer, into...
2017/0186624 METHODS OF FORMING METAL SILICIDES
A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a...
2017/0186622 SPACER-DAMAGE-FREE ETCHING
A method of patterning a semiconductor device is disclosed. A tri-layer photoresist is formed over a plurality of patterned features. The tri-layer photoresist...
2017/0186621 METHOD OF ATOMIC LAYER ETCHING USING FUNCTIONAL GROUP-CONTAINING FLUOROCARBON
A method of atomic layer etching (ALE) uses a cycle including: continuously providing a noble gas; providing a pulse of an etchant gas to the reaction space to...
2017/0186620 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having...
2017/0186619 ETCHING METHOD
The invention discloses a novel dry etching method, which comprises the following steps: forming a to-be-etched layer on a semiconductor substrate; forming a...
2017/0186618 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method of making an ohmic contact from a multi-metal-layer includes increasing a temperature in an annealing furnace containing the multi-metal-layer to a...
2017/0186617 SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a dielectric layer located on a substrate, wherein the dielectric layer includes nitrogen atoms, and the concentration of...
2017/0186616 Spacers with Rectangular Profile and Methods of Forming the Same
A method includes forming a spacer layer on a top surface and sidewalls of a patterned feature, wherein the patterned feature is overlying a base layer, A...
2017/0186615 RINSE SOLUTION AND METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICE BY USING THE SAME
A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched...
2017/0186614 METHOD OF FORMING SEMICONDUCTOR DEVICE USING SELECTIVE DEPOSITION LAYER AND RELATED DEVICE
A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an...
2017/0186613 METHOD OF FORMING PATTERN AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE SAME
A method of forming a pattern includes forming a first level pattern layer on a feature layer on a substrate. The first level pattern layer includes a...
2017/0186612 METHOD FOR PRODUCING NANOCRYSTALS WITH CONTROLLED DIMENSIONS AND DENSITY
Method for producing nanocrystals of semiconductor, comprising at least: ion bombardment of a thin layer of semiconductor arranged on at least one dielectric...
2017/0186611 POLYCRYSTALLINE SILICON THIN FILM AND METHOD THEREOF, OPTICAL FILM, AND THIN FILM TRANSISTOR
In accordance with various embodiments of the disclosed subject matter, a method for forming polycrystalline silicon thin film, a related optical film, a...
2017/0186609 SINGLE SEMICONDUCTOR CRYSTAL STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
A semiconductor single crystal structure may include a substrate; a defect trapping stack disposed on the substrate; and a semiconductor single crystal...
2017/0186608 SEMICONDUCTOR NANOCRYSTALS AND METHODS
In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals...
2017/0186607 METHOD OF FORMING A SEMICONDUCTOR DEVICE
The method of forming a semiconductor device is provided. A substrate having an exposed oxide layer is provided. A nitridation process is performed for the...
2017/0186606 FILM FORMING METHOD AND FILM FORMING APPARATUS
A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw...
2017/0186605 Methods for Depositing Films with Organoaminodisilane Precursors
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001## ...
2017/0186604 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process...
2017/0186603 METHOD OF FORMING SiOCN MATERIAL LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A method of forming a SiOCN material layer and a method of fabricating a semiconductor device are provided, the method of forming a SiOCN material layer...
2017/0186602 HARD MASK COMPOSITION, CARBON NANOTUBE LAYER STRUCTURE, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF...
A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask...
2017/0186601 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Disclosed is a substrate processing apparatus including: a holding unit that holds a substrate; a processing liquid supply unit that supplies a processing...
2017/0186600 Semiconductor wafer and method
In an embodiment, a method includes treating an edge region of a wafer including a substrate having an upper surface and one or more epitaxial Group III...
2017/0186599 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a...
2017/0186598 NON-SILICON DEVICE HETEROLAYERS ON PATTERNED SILICON SUBSTRATE FOR CMOS BY COMBINATION OF SELECTIVE AND...
A single fin or a pair of co-integrated n- and p-type single crystal electronic device fins are epitaxially grown from a substrate surface at a bottom of one...
2017/0186597 VAPOR DEPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES
Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such...
2017/0186596 GAS DISCHARGE DEVICE AND FLAT LIGHT SOURCE USING THE SAME, AND DRIVING METHOD THEREFOR
The object of this invention is to provide a gas discharge device which has a simple configuration, inexpensive, and has excellent luminous efficiency, for an...
2017/0186595 ACTIVE STABILIZATION OF ION TRAP RADIOFREQUENCY POTENTIALS
Disclosed are improved methods and structures for actively stabilizing the oscillation frequency of a trapped ion by noninvasively sampling and rectifying the...
2017/0186594 Monitoring Liquid Chromatography Elution to Determine When to Perform a Lockmass Calibration
A method of mass spectrometry is disclosed that comprises acquiring mass spectral data during a single experimental run or acquisition of a mass spectrometer...
2017/0186593 CONTOURED TARGET FOR SPUTTERING
Provided herein is an apparatus that includes a body with a top surface and a recess in the top surface. The top surface, excluding the recess, is...
2017/0186592 MULTI-ZONE ACTIVE-MATRIX TEMPERATURE CONTROL SYSTEM AND TEMPERATURE CONTROL METHOD, AND ELECTROSTATIC CHUCK AND...
The present invention discloses a multi-zone active-matrix temperature control system, the control system having a temperature control matrix and a gate...
2017/0186591 CLEANING METHOD OF PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS
A deposit deposited on an upper electrode of a plasma processing apparatus having an electromagnet, which is provided on an upper portion of a processing...
2017/0186590 TEMPERATURE ADJUSTING APPARATUS AND METHOD FOR A FOCUS RING
The present invention provides a temperature adjusting apparatus for a focus ring, wherein heat radiated from the plasma onto the focus ring is transferred...
2017/0186589 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHDO
A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency...
2017/0186588 DRY ETCHING APPARATUS
A dry etching apparatus includes a process chamber, a stage, a gas supply device and a plasma generating device. The stage is in the process chamber and is...
2017/0186587 PLASMA PROCESSOR
A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic...
2017/0186586 PLASMA SYSTEM, PLASMA PROCESSING METHOD, AND PLASMA ETCHING METHOD
A plasma system includes a source electrode, an RF source power generation unit, an RF source power output unit, and a source power output managing unit. The...
2017/0186585 ELECTRODE STRUCTURE FOR ICP ETCHER
The invention relates to an electrode structure for ICP etcher, including: inductive coils, inductive coil connectors, connect rods and sleeve; in which,...
2017/0186584 METHOD OF FABRICATING AN INTEGRATED CIRCUIT WITH A PATTERN DENSITY-OUTLIER-TREATMENT FOR OPTIMIZED PATTERN...
The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received....
2017/0186583 SCANNING ELECTRON MICROSCOPE AND METHOD FOR CONTROLLING SAME
The scanning electron microscope includes: an electron source; a first deflector for deflecting a primary electron beam emitted from the electron source; a...
2017/0186582 CONTROL SYSTEM AND METHOD FOR LITHOGRAPHY APPARATUS
A method for initializing a first operation in a first module at a first start time value in a first time base, the method comprising generating a clock...
2017/0186581 ION SOURCE
An ion source includes a magnetic field portion and an electrode. The magnetic field portion has an open side directing toward a workpiece and a closed side....
2017/0186580 DELAY TIME GENERATION APPARATUS FOR AIR CIRCUIT BREAKER
A delay time generation apparatus for an air circuit breaker according to the present invention can provide an effect of ensuring a delay time as long as...
2017/0186579 MULTI-POLE MOLDED CASE CIRCUIT BREAKER
The present invention relates to a multi-pole molded case circuit breaker, more particularly, to a multi-pole molded case circuit breaker having a safety...
2017/0186578 HIGH PERFORMANCE SWITCH FOR MICROWAVE MEMS
The present disclosure provides for a microelectromechanical switch including a first port (e.g., input port), one or more second ports (e.g., output ports), a...
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