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Patent # Description
2017/0243783 DEVICES AND METHODS OF REDUCING DAMAGE DURING BEOL M1 INTEGRATION
Intermediate semiconductor devices and methods of reducing damage during back end of the line (BEOL) metallization and metal one (M1) layer integration scheme...
2017/0243782 METHODS OF FORMING FIELD EFFECT TRANSISTOR (FET) AND NON-FET CIRCUIT ELEMENTS ON A SEMICONDUCTOR-ON-INSULATOR...
One illustrative method disclosed includes forming an isolation structure so as to define first and second active regions on the SOI substrate, forming a field...
2017/0243781 PROCESS FLOW FOR MANUFACTURING SEMICONDUCTOR ON INSULATOR STRUCTURES IN PARALLEL
A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator...
2017/0243780 METHOD FOR FILLING GAPS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMED BY THE SAME
A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate...
2017/0243779 CARRIER HEAD MEMBRANE WITH A BEAD
A method and apparatus for planarizing a substrate are provided. A substrate carrier head with an improved cover for holding the substrate securely is...
2017/0243778 ELECTROSTATIC CHUCK DEVICE
An electrostatic chuck device that adsorbs a plate-like specimen with an electrostatic adsorption electrode and cools the plate-like specimen, including an...
2017/0243777 PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In one embodiment, a plasma processing apparatus includes an electrostatic chuck configured to hold a substrate. The apparatus further includes a surrounding...
2017/0243776 Purge Device and Purge Method
A container is placed at a predetermined position on a purge device to prevent the container from getting caught on a nozzle. When the container is lowered and...
2017/0243775 OVERHEAD TRANSPORT VEHICLE
An overhead transport vehicle includes a vibration-proof portion disposed between a belt and a lift device. The vibration-proof portion includes a first...
2017/0243774 METHOD AND APPARATUS FOR FORMING POROUS SILICON LAYERS
Methods and apparatus for forming porous silicon layers are provided. In some embodiments, an anodizing bath includes: a housing having a first volume to hold...
2017/0243773 METHOD OF TRANSFERRING LIGHT-EMITTING DIODES
A method of transferring light-emitting diodes including picking up the light-emitting diodes from a base substrate by using a first stamper; rotating the...
2017/0243772 TRANSFER APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME
A transfer apparatus includes: a body portion; and an adhesive portion connected to the body portion, with which a point light source of a display apparatus is...
2017/0243771 LIGHT-IRRADIATION HEAT TREATMENT APPARATUS
A semiconductor wafer held by a holder within a chamber is irradiated and heated with halogen light emitted from multiple halogen lamps. A cylindrical louver...
2017/0243770 LIGHT-IRRADIATION HEAT TREATMENT APPARATUS
A semiconductor wafer held by a holder within a chamber is irradiated and heated with halogen light emitted from multiple halogen lamps. Cylindrical outer and...
2017/0243769 Semiconductor Bonding Apparatus and Related Techniques
A semiconductor structure bonding apparatus is disclosed. The apparatus may include a leveling adjustment system configured to provide leveling adjustment of...
2017/0243768 ETCHING METHOD OF GLASS SUBSTRATE AND WET ETCHING APPARATUS THEREOF
A wet etching apparatus includes a wet bench; a tank, which is set in the wet bench and is movable in the wet bench in an upper position and a lower position;...
2017/0243766 MINIATURE WAFER PROCESSING APPARATUS
A miniature wafer processing apparatus includes a first half portion, a second half portion, a gas supply unit, a liquid supply unit, a ring sealing member...
2017/0243765 PLASMA PROCESSING METHOD
A plasma processing method which performs plasma processing on a sample by a plurality of steps includes a first step of stopping supply of gas of one step...
2017/0243764 SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus, including: a process chamber configured to process substrates; a substrate mounting stand installed in the process chamber...
2017/0243763 SUPPORT SUBSTRATE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR PACKAGE USING THE SAME
A support substrate, a method of manufacturing a semiconductor package, and a semiconductor package, the support substrate including a first plate; a second...
2017/0243762 EMBEDED CIRCUIT PATTERNING FEATURE SELECTIVE ELECTROLESS COPPER PLATING
Embodiments describe the selective electroless plating of dielectric layers. According to an embodiment, a dielectric layer is patterned to form one or more...
2017/0243761 LOW CTE COMPONENT WITH WIRE BOND INTERCONNECTS
A component such as an interposer or microelectronic element can be fabricated with a set of vertically extending interconnects of wire bond structure. Such...
2017/0243760 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In a method of manufacturing a semiconductor device, a first layer containing a Si.sub.1-xGe.sub.x layer doped with phosphorous is formed over an n-type...
2017/0243759 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, AND ELECTRONIC DEVICE
The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an...
2017/0243758 REMOVING POLYSILICON
Methods include exposing polysilicon to an aqueous composition comprising nitric acid, poly-carboxylic acid and ammonium fluoride, and removing a portion of...
2017/0243757 METHODS FOR CYCLIC ETCHING OF A PATTERNED LAYER
Methods and systems for cyclic etching of a patterned layer are described. In an embodiment, a method includes receiving a substrate comprising an underlying...
2017/0243756 PLASMA ETCHING METHOD
The present invention is a plasma etching method that is implemented under plasma conditions using a process gas, wherein at least one gas selected from a...
2017/0243755 METHOD AND SYSTEM FOR ATOMIC LAYER ETCHING
Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a...
2017/0243754 CYCLIC OXIDE SPACER ETCH PROCESS
Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may...
2017/0243753 SUBSTRATE PROCESSING METHOD
There is disclosed a substrate processing method for etching a substrate on which a first and a second silicon oxide layer having different film qualities are...
2017/0243752 POLISHING COMPOSITION AND METHOD FOR PRODUCING POLISHING COMPOSITION
Provided is a polishing composition which is capable of sufficiently suppressing a polishing speed for a low relative permittivity material. Disclosed is a...
2017/0243751 Self-Anchored Catalyst Metal-Assisted Chemical Etching
A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each...
2017/0243750 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a semiconductor device having improved performance. In a semiconductor substrate located in a memory cell region, a memory cell of a nonvolatile...
2017/0243749 METHOD OF FORMING OXIDE LAYER
A method of forming an oxide layer is provided in the present invention. The method includes the following steps. A first oxide layer is formed on a...
2017/0243748 METHODS FOR GATE FORMATION IN CIRCUIT STRUCTURES
Methods for forming a gate structure of a circuit structure are provide. The methods for forming the gate structure may include: forming a first gate pattern...
2017/0243747 Method for Implanting Ions into a Semiconductor Substrate and an Implantation System
A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the...
2017/0243746 VERTICAL POWER TRANSISTOR WITH DUAL BUFFER REGIONS
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
2017/0243745 VERTICAL POWER TRANSISTOR WITH DEEP FLOATING TERMINATION REGIONS
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
2017/0243744 Trimming Inorganic Resists With Selected Etchant Gas Mixture And Modulation of Operating Variables
Provided is a method of trimming an inorganic resist in an integration scheme, the method comprising: disposing a substrate in a process chamber, the substrate...
2017/0243743 REACTIVE ION ETCHING ASSISTED LIFT-OFF PROCESSES FOR FABRICATING THICK METALLIZATION PATTERNS WITH TIGHT PITCH
Lift-off methods for fabricating metal line patterns on a substrate are provided. For example, a method to fabricate a device includes forming a sacrificial...
2017/0243742 FILM FORMING METHOD
A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target...
2017/0243741 SEMICONDUCTOR DEVICES
A semiconductor device includes a lower insulation layer, a plurality of base layer patterns separated from each other on the lower insulation layer, a...
2017/0243740 USE OF AT LEAST ONE BINARY GROUP 15 ELEMENT COMPOUND, A 13/15 SEMICONDUCTOR LAYER AND BINARY GROUP 15 ELEMENT...
The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-E'R.sup.3R.sup.4 (I) or ...
2017/0243739 3D MICROMOLD AND PATTERN TRANSFER
According to various aspects and embodiments, a system and method for forming a packaged electronic device is disclosed. One example of the method comprises...
2017/0243738 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND A COMPUTER-READABLE STORAGE MEDIUM
A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole...
2017/0243737 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a...
2017/0243736 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the...
2017/0243735 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a driving magnet that is disposed correspondingly to a movable pin and that has a predetermined polar direction with...
2017/0243734 METHOD FOR FORMING SILICON NITRIDE FILM SELECTIVELY ON SIDEWALLS OR FLAT SURFACES OF TRENCHES
A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si--N bond on an upper surface, and a...
2017/0243733 Backside Polisher with Dry Frontside Design and Method Using the Same
The present disclosure provides a semiconductor fabrication apparatus in accordance with one embodiment. The apparatus includes a wafer stage that is operable...
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