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Patent # Description
2017/0243681 A Metal Assembly Comprising a Superconductor
A metal assembly (1) suitable for being wound into a coil and used in DC magnet applications. The metal assembly comprises an insulated superconductive wire...
2017/0243680 MULTILAYER IRON NITRIDE HARD MAGNETIC MATERIALS
The disclosure describes multilayer hard magnetic materials including at least one layer including .alpha.''-Fe.sub.16N.sub.2 and at least one layer including...
2017/0243679 ELECTRIC COMPONENT, METHOD FOR PRODUCING THE ELECTRIC COMPONENT, AND COMPOSITE MATERIAL STRIP FOR PRODUCING THE...
The invention relates to a composite material strip for producing an electric component, in particular a resistor, in particular a low-resistance...
2017/0243678 DATA CABLE AND STRANDED CONDUCTOR
A data cable has a specially formed stranded conductor, as a result of which the transmission properties of the data cable are significantly improved. The...
2017/0243676 CABLE
A cable (100) includes a power wire (1), a ground wire (3), data transmission wires (2) between the power wire and the ground wire, and an insulating outer...
2017/0243675 LASER-MARKABLE CABLES AND SYSTEMS FOR MAKING THE SAME
Laser-markable cable layers for a cable are provided. The laser-markable cable layers include an inner layer formed of a first polymer material and an outer...
2017/0243674 METHOD OF MANUFACTURING ELECTRICAL CABLE, AND RESULTING PRODUCT, WITH REDUCED REQUIRED INSTALLATION PULLING FORCE
Disclosed are cable types, including a type THHN cable, the cable types having a reduced surface coefficient of friction, and the method of manufacture...
2017/0243673 WIRE HARNESS
A wiring harness has a waterproof structure in which a waterproof agent covers a conductor exposed portion-and outer peripheral surfaces of end portions of...
2017/0243672 COMPOSITE TRANSPARENT CONDUCTING FILMS AND METHODS FOR PRODUCTION THEREOF
A composite transparent conducting film (TCF) on a substrate that includes a first region extending to a first depth of the TCF and having a higher density...
2017/0243671 Vibration Resistant Cable
A vibration resistant cable may be provided. The vibration resistant cable may comprise a first conductor and a second conductor. The first conductor and the...
2017/0243670 CONDUCTING ELASTOMERS
Embodiments of the present invention relate to conducting elastomers and associated fabrication methods. In one embodiment, the conducting elastomer comprises...
2017/0243669 CONDUCTIVE RESIN COMPOSITION AND PLASTIC MOLDED PRODUCT USING THE SAME
According to one aspect of the present invention, carbon nanotubes whose diameter, length, crystallinity, purity and the like are adjusted to predetermined...
2017/0243668 CARBON NANOTUBE-COATED SUBSTRATES AND METHODS OF MAKING THE SAME
Various embodiments of the present disclosure pertain to methods of making carbon nanotube-coated substrates by dissolving carbon nanotubes in a solvent to...
2017/0243667 ALUMINUM ALLOY ELECTRICAL WIRE AND WIRE HARNESS USING SAME
An aluminum alloy electrical wire includes an aluminum alloy strand that is composed of an aluminum alloy including: magnesium in a range of 0.11 to 1.03 atom...
2017/0243666 AUTOMATIC TRANSFER SYSTEM
A sample transfer system for nuclear irradiation and a method of automatically irradiating sample containers is disclosed. The sample transfer system includes...
2017/0243665 PARTICLE BEAM THERAPY SYSTEM, RIDGE FILTER, AND METHOD OF MAKING RIDGE FILTER
A structure configuring a ridge filter has line symmetry about a line vertical to a depth direction passing the center of the structure. A small structure...
2017/0243664 REACTIVITY CONTROL IN A MOLTEN SALT REACTOR
Methods of controlling the reactivity of a molten salt fission reactor. The molten salt fission reactor comprises a core and a coolant tank (101), the core...
2017/0243663 LOWER END FIXING BODY FOR IMPROVING FLOW PATH RESISTANCE OF IN-CORE DETECTOR
The present invention relates to a lower end fitting for reducing flow resistance due to an in-core instrument in a nuclear fuel assembly, that is, a lower end...
2017/0243662 MODULAR NUCLEAR FISSION WASTE CONVERSION REACTOR
A modular, nuclear waste conversion reactor that continuously produces usable energy while converting U-238 and/or other fertile waste materials to fissionable...
2017/0243661 MEMORY SYSTEM FOR RAPIDLY TESTING DATA LANE INTEGRITY
A memory system for a computer is provided as well as a method for integrity testing a memory interface. The memory system includes a memory controller...
2017/0243660 ONE TIME PROGRAMMABLE MEMORY AND A DATA WRITING METHOD THEREOF
A one time programmable (OTP) memory includes an OTP cell array including a plurality of OTP cells provided at locations where a plurality of word lines and a...
2017/0243659 MEMORY CIRCUIT WITH LEAKAGE COMPENSATION
A memory array comprising a word line and a bit line is disclosed. Each of a plurality of memory cells of the memory array has a first terminal connected to...
2017/0243658 SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME
A semiconductor device and a method of operating the same are provided. The method includes performing a program operation on a memory cell so that a threshold...
2017/0243657 MEMORY SYSTEM
A memory system includes a semiconductor memory device having memory cells arranged in rows and columns, and a controller configured to issue a write command...
2017/0243656 FLASH MEMORY DEVICE AND ERASE METHOD THEREOF
Provided is a flash memory device capable of restricting power consumption in an erase operation. The invention includes a plurality of wells, a power supply...
2017/0243655 DATA STORAGE DEVICE AND DETECTION METHOD FOR FLASH MEMORY
A detection method for detecting a programming operation of a flash memory includes issuing a program command of the programming operation to the flash memory,...
2017/0243654 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
According to one embodiment, a semiconductor memory device includes first and second memory cells, a word line, and first and second bit lines. The first and...
2017/0243653 NAND FLASH MEMORY COMPRISING CURRENT SENSING PAGE BUFFER
Disclosed herein is a NAND flash memory comprising a bit-line and a page buffer, the page buffer comprising: a first switching circuit arranged between a first...
2017/0243652 METHOD FOR DETECTING A THINNING OF THE SEMICONDUCTOR SUBSTRATE OF AN INTEGRATED CIRCUIT FROM ITS BACK FACE AND...
The thinning of a semiconductor substrate of an integrated circuit from a back face is detected using the measurement of a physical quantity representative of...
2017/0243651 SEMICONDUCTOR DEVICE HAVING SUB-BLOCK STACK STRUCTURES
A semiconductor device includes sub-block stack structures respectively including source layers, where the sub-block stack structures are disposed to be spaced...
2017/0243650 WORD LINE DECODER CIRCUITRY UNDER A THREE-DIMENSIONAL MEMORY ARRAY
The total chip area for a three-dimensional memory device can be reduced employing a design layout in which the word line decoder circuitry is formed...
2017/0243649 NONVOLATILE MEMORY CELL EMPLOYING HOT CARRIER EFFECT FOR DATA STORAGE
A nonvolatile memory cell includes a first-conductivity-type silicon substrate, a metal layer formed in a surface of the first-conductivity-type silicon...
2017/0243648 Method for Writing in an EEPROM Memory and Corresponding Device
A method can be used for writing in a memory location of the electrically-erasable and programmable memory type. The memory location includes a first memory...
2017/0243647 STATE-CHANGEABLE DEVICE
A state-changeable device includes a first and a second particle arranged in proximity to each other; and a coupling material between the first and the second...
2017/0243646 DEVICE AND METHOD FOR GENERATING RANDOM NUMBERS
According to an embodiment of the present disclosure, a device and a method are provided. The device includes one or more resistive random access memory...
2017/0243645 BI-POLAR MEMRISTOR
A circuit comprising an input, a ground, a first switch, a second switch and a bi-polar memristor, wherein the first switch is a first transistor and a gate of...
2017/0243644 REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES
Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device...
2017/0243643 PHASE CHANGE MEMORY DEVICES AND SYSTEMS HAVING REDUCED VOLTAGE THRESHOLD DRIFT AND ASSOCIATED METHODS
Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold...
2017/0243642 REUSING SNEAK CURRENT IN ACCESSING MEMORY CELLS
A method to access two memory cells include determining a first cell current flowing through a first memory cell by subtracting a sneak current associated with...
2017/0243641 RESISTIVE MEMORY APPARATUS AND VOLTAGE GENERATING CIRCUIT THEREFOR
A resistive memory apparatus may include a memory region including a plurality of resistive memory cells arranged in a plurality of memory cell pairs. The...
2017/0243640 NONVOLATILE MEMORY DEVICES HAVING WIDE OPERATION RANGE
A nonvolatile memory device includes a nonvolatile memory cell and a variable resistive load portion. The variable resistive load portion is coupled between a...
2017/0243639 RESISTIVE MEMORY DEVICE AND METHOD RELATING TO A READ VOLTAGE IN ACCORDANCE WITH VARIABLE SITUATIONS
A resistive memory device and a method may be provided. The resistive memory device may include a reset voltage-detecting circuit, a set voltage-detecting...
2017/0243638 WRITE ABORT DETECTION FOR MULTI-STATE MEMORIES
Techniques are presented to determine whether a multi-state memory device suffers has a write operation aborted prior to its completion. In an example where...
2017/0243637 METHODS AND SYSTEMS TO SELECTIVELY BOOST AN OPERATING VOLTAGE OF, AND CONTROLS TO AN 8T BIT-CELL ARRAY AND/OR...
Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted...
2017/0243636 STATIC RAM FOR DIFFERENTIAL POWER ANALYSIS RESISTANCE
The present invention discloses a static RAM for defensive differential power consumption analysis, comprising a replica bit-line circuit, a decoder, an...
2017/0243635 Efficient Bitline Driven One-Sided Power Collapse Write-Assist Design For SRAMs
A voltage supply circuit for a memory cell including a first circuit coupled between a first voltage supply and a first voltage supply terminal of the memory...
2017/0243634 SEMICONDUCTOR MEMORY DEVICE INCLUDING SRAM CELLS
A semiconductor memory device includes a plurality of static random access memory (SRAM) cells connected to a bit line pair comprising a first bit line and a...
2017/0243633 DESIGN STRUCTURE FOR REDUCING PRE-CHARGE VOLTAGE FOR STATIC RANDOM-ACCESS MEMORY ARRAYS
A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read...
2017/0243632 DEVICE FOR CONTROLLING A REFRESH OPERATION TO A PLURALITY OF BANKS IN A SEMICONDUCTOR DEVICE
A refresh control device may include a plurality of latch circuits configured to receive an active signal, a refresh signal, an active control signal, and a...
2017/0243631 METHOD AND APPARATUS FOR CONTROLLING ACCESS TO A COMMON BUS BY MULTIPLE COMPONENTS
Apparatuses and methods for controlling access to a common bus including a plurality of memory devices coupled to a common bus, wherein individual ones of the...
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