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| Patent # | Description |
|---|---|
| 2017/0256675 |
LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING DEVICE COMPRISING SAME
(As Amended) A light emitting device package according to an embodiment comprises: a light emitting device comprising a light emitting structure including a first... |
| 2017/0256674 |
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME A light emitting device includes: a light emitting element that includes a light extracting surface, an electrode formed surface opposite to the light... |
| 2017/0256673 |
NITRIDE SEMICONDUCTOR STRUCTURE A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a... |
| 2017/0256672 |
Group III Nitride Heterostructure for Optoelectronic Device Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of... |
| 2017/0256671 |
AVALANCHE PHOTODIODE WITH LOW BREAKDOWN VOLTAGE An Si/Ge SACM avalanche photodiodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various... |
| 2017/0256670 |
SOLAR CELL A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a... |
| 2017/0256669 |
CONFORMAL LENS OVER SPHERICAL DIODES IN A PV PANEL A PV panel is manufactured using a monolayer of small silicon sphere diodes (10-300 microns in diameter) connected in parallel. The spheres are embedded in an... |
| 2017/0256668 |
SEMICONDUCTOR EPITAXIAL WAFER AND METHOD OF PRODUCING THE SAME, AND METHOD
OF PRODUCING SOLID-STATE IMAGE... To provide a semiconductor epitaxial wafer having an epitaxial layer with excellent crystallinity, the semiconductor epitaxial wafer is a semiconductor... |
| 2017/0256667 |
GRAPHENE-SEMICONDUCTOR SCHOTTKY JUNCTION PHOTODETECTOR OF HAVING TUNABLE
GAIN Disclosed herein is a photodetector utilizing graphene. A single-layer graphene channel is formed on a semiconductor substrate doped with n-type impurity. The... |
| 2017/0256666 |
BACK SIDE ILLUMINATED IMAGE SENSOR WITH GUARD RING REGION REFLECTING
STRUCTURE An imaging sensor system includes a pixel array having a plurality of pixel cells disposed in a first semiconductor layer, where each one of the plurality of... |
| 2017/0256665 |
APPRATUS FOR GENERATING TERAHERTZ WAVE AND METHOD FOR CONTROLLING
TERAHERTZ WAVEFRONT USING THE SAME The present disclosure relates to a terahertz wave generation apparatus capable of wavefront control. A terahertz wave generating apparatus according to an... |
| 2017/0256664 |
AERODYNAMIC SOLAR PODS A method including installing solar pods at varying heights on a tower, where a size of each of the solar pods is inversely related its installation height on... |
| 2017/0256663 |
METHOD FOR PRODUCING A CONDUCTIVE MULTIPLE SUBSTRATE STACK A method for producing a multiple-substrate stack from an, in particular wavelength-sensitive, semiconductor substrate and at least one further, in particular... |
| 2017/0256662 |
Solar panel module A solar panel module including a cover, a back plate, at least two solar panels, and at least a dark insulating layer is provided. The solar panels are... |
| 2017/0256661 |
METHOD OF MANUFACTURING PHOTOVOLTAIC PANELS WITH VARIOUS GEOMETRICAL
SHAPES One embodiment of the present invention provides a photovoltaic module. The photovoltaic module includes a front-side cover, a back-side cover, and a plurality... |
| 2017/0256660 |
SOLAR CELL AND SOLAR CELL MODULE A solar cell is provided with: an n-type single crystal silicon substrate; an n-type amorphous silicon layer disposed on a first main surface of the n-type... |
| 2017/0256659 |
SELF-BALANCING POSITION SENSITIVE DETECTOR A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a... |
| 2017/0256658 |
OPTICAL SENSOR DEVICE A package for an optical sensor device has a double-molded structure in which a first resin molded portion and a second resin molded portion are integrated.... |
| 2017/0256657 |
MPS DIODE There is provided an MPS diode comprising a first semiconductor layer that is an N type; P-type semiconductor regions and N-type semiconductor regions that are... |
| 2017/0256656 |
SCHOTTKY DIODE AND MANUFACTURING METHOD OF THE SAME Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second... |
| 2017/0256655 |
GATE-TO-BULK SUBSTRATE ISOLATION IN GATE-ALL-AROUND DEVICES A method for fabricating a semiconductor device comprises forming a sacrificial layer of a first semiconductor material on a substrate, a layer of a second... |
| 2017/0256654 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
INCLUDING THE SEMICONDUCTOR DEVICE The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. One embodiment of the present invention is a... |
| 2017/0256653 |
DISPLAY PANEL A display panel includes a first substrate, and the first substrate includes a base plate; a first conducive line disposed on the base plate and extending... |
| 2017/0256652 |
OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back... |
| 2017/0256651 |
LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE AND MANUFACTURING METHOD
THEREOF The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LTPS TFT substrate of the present invention includes a metal layer... |
| 2017/0256650 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide... |
| 2017/0256649 |
SEMICONDUCTOR DEVICE A semiconductor device includes a first conductive film, an insulating film, a second conductive film, and a semiconductor film. The insulating film is formed... |
| 2017/0256648 |
Semiconductor Device, Display Device Including The Semiconductor Device,
Display Module Including The Display... A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second... |
| 2017/0256647 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, OR DISPLAY DEVICE
INCLUDING THE SAME A gate electrode, a first insulating film thereover, an oxide semiconductor film thereover, a source electrode and a drain electrode thereover, and a second... |
| 2017/0256646 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A transistor having an oxide semiconductor film in a channel formation region and a manufacturing method thereof are disclosed. The transistor is formed by the... |
| 2017/0256645 |
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair... |
| 2017/0256644 |
DIRECTIONAL DEPOSITION OF PROTECTION LAYER A method for forming a fin device includes forming semiconductor fins over a first dielectric layer. A second dielectric layer is directionally deposited into... |
| 2017/0256643 |
Ultra High Voltage Device According to an embodiment, a semiconductor device is provided. The device includes a second region having a greater curvature than a first region. The device... |
| 2017/0256642 |
Tunneling Field Effect Transistor A tunneling field-effect transistor with an insulated planar gate adjacent to a heterojunction between wide-bandgap semiconductor, such as silicon carbide, and... |
| 2017/0256641 |
Semiconductor Device Comprising a First Gate Electrode and a Second Gate
Electrode A semiconductor device includes a transistor. The transistor includes a source region and a drain region disposed adjacent to a first main surface of a... |
| 2017/0256640 |
Semiconductor Device Structure and Method for Forming the Same A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a... |
| 2017/0256639 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The... |
| 2017/0256638 |
GaN-on-Si SEMICONDUCTOR DEVICE STRUCTURES FOR HIGH CURRENT/ HIGH VOLTAGE
LATERAL GaN TRANSISTORS AND METHODS OF... A GaN-on-Si device structure and a method of fabrication are disclosed for improved die yield and device reliability of high current/high voltage lateral GaN... |
| 2017/0256637 |
SEMICONDUCTOR DEVICE A semiconductor device includes a substrate, and a stacked portion over the substrate, the stacked structure including a first nitride semiconductor layer... |
| 2017/0256636 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first III-V... |
| 2017/0256635 |
NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR MANUFACTURING METHOD In a nitride semiconductor including a Si substrate and a nitride semiconductor stacked body disposed on the Si substrate, the half value width of an X-ray... |
| 2017/0256634 |
SEMICONDUCTOR DEVICE A linear active cell region is formed from a plurality of divided active cell regions arranged apart from each other in a second direction (y direction). The... |
| 2017/0256633 |
SKYRMION DIODE AND METHOD OF MANUFACTURING THE SAME The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body.... |
| 2017/0256632 |
FINFET AND FABRICATION METHOD THEREOF Present embodiments provide for a FinFET and fabrication method thereof. The fabrication method includes two selective etching processes to form the channel.... |
| 2017/0256631 |
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE,
AND DISPLAY DEVICE The present disclosure provides a TFT, its manufacturing method, an array substrate and a display device. The method includes steps of: forming a pattern of a... |
| 2017/0256630 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Disclosed is a method of manufacturing a semiconductor device. The semiconductor device may be manufactured by forming a trench extended in a first direction... |
| 2017/0256629 |
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND METHOD FOR FORMING MASK
PATTERN OF THE SAME A method for manufacturing a semiconductor element includes forming a first region in a semiconductor region by ion-implanting impurities using a first mask;... |
| 2017/0256628 |
METHODS OF FORMING FINE PATTERNS A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first... |
| 2017/0256627 |
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE A method for forming a semiconductor device structure is provided. The method includes forming a target layer over a substrate and forming a seed layer over... |
| 2017/0256626 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE A semiconductor device includes a substrate, a nitride semiconductor layer formed on the substrate, a gate electrode formed on the nitride semiconductor layer;... |
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