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Patent # Description
2017/0263744 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING GATE STRUCTURE WITH DOPED HARD MASK
A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer...
2017/0263743 HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND PROCESS OF FORMING THE SAME
A High Electron Mobility Transistor (HEMT) and a process of forming the same are disclosed. The HEMT includes a substrate, a channel layer, a barrier layer,...
2017/0263742 COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A compound semiconductor device includes a compound semiconductor layer, a gate electrode disposed above the compound semiconductor layer, and source and drain...
2017/0263741 SEMICONDUCTOR DEVICE
A semiconductor device includes a first stacked portion above a substrate, the first stacked portion comprising a first nitride semiconductor layer containing...
2017/0263740 SEMICONDUCTOR DEVICE
Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of first trench portions formed at a front surface side of the...
2017/0263739 SWITCHING DEVICE
A switching device includes a semiconductor substrate having a first element range including first trenches for gates, and an ineffective range not including...
2017/0263738 SWITCHING DEVICE
A switching device includes a semiconductor substrate having a first element range and an ineffective range. First trenches extend in a first direction across...
2017/0263737 SEMICONDUCTOR DEVICES WITH CAVITIES
A semiconductor device comprises a first semiconductor wafer including a cavity formed in the first semiconductor die. A second semiconductor die is bonded to...
2017/0263736 ADVANCED HETEROJUNCTION DEVICES AND METHODS OF MANUFACTURE OF ADVANCED HETEROJUNCTION DEVICES
Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related...
2017/0263735 Method of Manufacturing Thin Film Transistor (TFT) and TFT
A method of manufacturing a thin-film transistor (TFT) and a TFT are provided. The method of manufacturing the TFT includes, after depositing a semiconductor...
2017/0263734 THIN FILM TRANSISTOR (TFT) ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
The present disclosure provides a thin film transistor array substrate and a fabrication method thereof, and a display device. The thin film transistor array...
2017/0263733 FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME
The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor...
2017/0263732 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device preferably includes a substrate, a fin-shaped structure on the substrate, a buffer layer on the fin-shaped structure, and an epitaxial...
2017/0263731 SEMICONDUCTOR DEVICE STRAIN RELAXATION BUFFER LAYER
A method for forming a semiconductor device comprises forming a first buffer layer with a first melting point on a substrate. A second buffer layer is formed...
2017/0263730 SEMICONDUCTOR PROCESS
A semiconductor process including the following steps is provided. An epitaxial layer is formed on a substrate. An oxide layer is formed on the epitaxial...
2017/0263729 Surface Treatment and Passivation for High Electron Mobility Transistors
A High Electron Mobility Transistor (HEMT) and a method of forming the same are disclosed. The HEMT includes a first III-V compound layer having a first band...
2017/0263728 STRUCTURE AND METHOD TO ACHIEVE COMPRESSIVELY STRAINED SI NS
A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each...
2017/0263727 LATERAL PNP BIPOLAR TRANSISTOR WITH NARROW TRENCH EMITTER
A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter efficiency....
2017/0263726 THIN FILM TRANSISTOR, METHOD FOR PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS
The present disclosure provides a thin film transistor, a method for producing the same, an array substrate and a display apparatus. An electrode of the thin...
2017/0263725 SEMICONDUCTOR DEVICE
A technique of reducing the complication in manufacture is provided. There is provided a semiconductor device comprising an n-type semiconductor region made of...
2017/0263724 SEMICONDUCTOR DEVICE
A semiconductor device includes a first semiconductor layer, a first electrode above and electrically connected to the first semiconductor layer, a second...
2017/0263723 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
A semiconductor device may include a linear gate trench that crosses an active region of a substrate of the semiconductor device. The active region may include...
2017/0263722 SEMICONDUCTOR DEVICE
A semiconductor device includes a first gate electrode on a substrate, a first trench on a first side of the first gate electrode, a second trench on a second...
2017/0263721 COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT
Methods of fabricating a first contact to a semiconductor device, which fundamentally comprises providing a semiconductor device formed on a substrate. The...
2017/0263720 Method of Forming a Semiconductor Device
According to an embodiment of a method of forming a semiconductor device, a semiconductor layer including a first dopant species of a first conductivity type...
2017/0263719 METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
A method for manufacturing a semiconductor structure is provided, which may include: forming a p-doped region adjacent to an n-doped region in a substrate;...
2017/0263718 TERMINATION TRENCH STRUCTURES FOR HIGH-VOLTAGE SPLIT-GATE MOS DEVICES
Apparatus and associated methods relate to an edge-termination structure surrounding a high-voltage MOSFET for reducing a peak lateral electric field. The...
2017/0263717 SEMICONDUCTOR DEVICE CAPABLE OF HIGH-VOLTAGE OPERATION
A semiconductor device capable of high-voltage operation includes a semiconductor substrate having a first conductivity type. A first well doped region is...
2017/0263716 SEMICONDUCTOR DEVICE
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer on the first nitride semiconductor layer, a source...
2017/0263715 METHOD, APPARATUS AND SYSTEM FOR A HIGH DENSITY MIDDLE OF LINE FLOW
At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is...
2017/0263714 SEMICONDUCTOR DEVICE
A semiconductor device includes first and second electrodes spaced apart along a first direction, a first semiconductor region of a first conductivity type...
2017/0263713 POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES
A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The...
2017/0263712 WIDE BANDGAP SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR CELLS AND COMPENSATION STRUCTURE
A semiconductor device includes transistor cells in a semiconductor portion, wherein the transistor cells are electrically connected to a gate metallization, a...
2017/0263711 METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING MULTI-CHANNEL
A semiconductor device includes an isolation pattern on a substrate, the isolation pattern having a lower insulating pattern on the substrate, and a spacer to...
2017/0263710 SEMICONDUCTOR ELEMENT, ELECTRIC EQUIPMENT, BIDIRECTIONAL FIELD EFFECT TRANSISTOR, AND MOUNTED STRUCTURE BODY
Provided is a semiconductor element in which a two-dimensional hole gas with an enough concentration can exist, even though the p-type GaN layer is not...
2017/0263709 Field Effect Transistors and Methods of Forming Same
Semiconductor devices and methods of forming the same are provided. A semiconductor device includes a substrate having a fin. A first nanowire is disposed on...
2017/0263708 HIGH VOLTAGE FIELD EFFECT TRANSISTORS
Transistors suitable for high voltage and high frequency operation. A nanowire is disposed vertically or horizontally on a substrate. A longitudinal length of...
2017/0263707 EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD EFFECT TRANSISTOR
After forming a buried nanowire segment surrounded by a gate structure located on a substrate, an epitaxial source region is grown on a first end of the buried...
2017/0263706 INGAAS EPI STRUCTURE AND WET ETCH PROCESS FOR ENABLING III-V GAA IN ART TRENCH
Embodiments of the invention include nanowire and nanoribbon transistors and methods of forming such transistors. According to an embodiment, a method for...
2017/0263704 METHODS FOR VARIED STRAIN ON NANO-SCALE FIELD EFFECT TRANSISTOR DEVICES
A semiconductor device and a method to form the semiconductor device are disclosed. An n-channel component of the semiconductor device includes a first...
2017/0263703 SEMICONDUCTOR DEVICE
A semiconductor device includes a first semiconductor region of a first conductivity type on a first electrode and a second semiconductor region of the first...
2017/0263702 SELF-FORMING SPACERS USING OXIDATION
A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin...
2017/0263701 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes a substrate, a semiconductor layer that is formed on the substrate and includes a pn junction or a hetero-junction, an...
2017/0263700 III-Nitride Based Semiconductor Device with Low Vulnerability to Dispersion and Backgating Effects
The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a...
2017/0263699 SEMICONDUCTOR DEVICE
A semiconductor device includes a layer having first and second surfaces and a first type first region, a second type second region in the layer between the...
2017/0263698 POWER METAL-OXIDE-SEMICONDUCTOR DEVICE
A power metal-oxide-semiconductor (MOS) device is provided. The power MOS device is formed on a semiconductor substrate and includes an active region and a...
2017/0263697 Wide Gap Semiconductor Device and Method of Manufacturing the Same
A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the...
2017/0263696 HIGH VOLTAGE GALVANIC ISOLATION DEVICE
A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low...
2017/0263695 DEFORMABLE AND FLEXIBLE CAPACITOR
A method for forming a capacitive device comprises forming a first dielectric layer on a substrate. Portions of the first dielectric layer are removed to for...
2017/0263694 METHOD OF FORMING SEMICONDUCTOR STRUCTURES
A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a...
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