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Patent # Description
2017/0263643 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each...
2017/0263642 Vertical Resistor In 3D Memory Device With Two-Tier Stack
A vertical, columnar resistor in a semiconductor device is provided, along with techniques for fabricating such a resistor. The resistor may be provided in a...
2017/0263641 Three-Dimensional Semiconductor Memory Devices
Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common...
2017/0263640 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor layer, a first electrode, first to third layers, and nitride...
2017/0263639 SEMICONDUCTOR STORAGE DEVICE
According to one embodiment, a semiconductor storage device includes a substrate including an insulating region and a semiconductor region, an insulating film...
2017/0263638 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a first region including first memory cells and first wiring layers, and a second region including second memory cells...
2017/0263637 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member....
2017/0263636 STACKED NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH BURIED SOURCE LINE AND METHOD OF MANUFACTURE
According to one embodiment, a semiconductor device includes a first interconnection, a first semiconductor region, a stacked body, a columnar portion, first...
2017/0263635 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, a semiconductor device includes a substrate; a stacked body provided on the substrate, the stacked body including a plurality of...
2017/0263634 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor memory device according to the embodiment includes a substrate, electrodes, at least one pillar structure, at least one charge storage film,...
2017/0263633 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to the embodiment, a semiconductor device includes: a substrate; a stacked body provided on the substrate and including a plurality of electrode...
2017/0263631 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type; a stacked body; a plurality of columnar...
2017/0263630 SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a columnar section and an interconnection section. The stacked...
2017/0263629 SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes a substrate; a stacked body; a first columnar portion; a second columnar portion; and a...
2017/0263628 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to the embodiment, the semiconductor device includes: a stacked body; first interconnect and a second interconnect; a first columnar portion, a...
2017/0263627 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor memory device includes a semiconductor layer, a stacked body on the semiconductor layer, the stacked body including a first insulating layer...
2017/0263626 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
According to an embodiment, a semiconductor memory device comprises: a plurality of control gate electrodes stacked above a substrate; a first semiconductor...
2017/0263625 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to an embodiment, a semiconductor memory device includes a substrate, at least one stacked body, and a first insulating film. The stacked body...
2017/0263624 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; a semiconductor layer provided extending in a first direction...
2017/0263623 Memory Device with Multi-Layer Channel and Charge Trapping Layer
A 3-D/vertical non-volatile (NV) memory device such as 3-D NAND flash memory and fabrication method thereof, the NV memory device includes vertical openings...
2017/0263622 Embedded SONOS Based Memory Cells
Memory devices and methods for forming the same are disclosed. In one embodiment, the device includes a non-volatile memory (NVM) transistor formed in a first...
2017/0263621 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, a stacked body includes a plurality of metal layers stacked with an insulator interposed. A semiconductor body extends in a...
2017/0263620 MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
There are provided a memory device and a manufacturing method thereof. A method of manufacturing a memory device may include forming, on a substrate, a...
2017/0263619 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are...
2017/0263618 SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes: a substrate; a first interconnect; a second interconnect; a plurality of third...
2017/0263617 LOW COST HIGH PERFORMANCE EEPROM DEVICE
Devices and methods for forming a device are presented. The method includes providing a substrate prepared with a cell area separated by other active areas by...
2017/0263616 EMBEDDED NONVOLATILE MEMORY AND FORMING METHOD THEREOF
A nonvolatile memory embedded in an advanced logic circuit and a method forming the same are provided. In the nonvolatile memory, the word lines and erase...
2017/0263615 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a...
2017/0263614 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor memory device according to an embodiment, includes a first stacked body, a second stacked body, an intermediate conductive layer, an...
2017/0263613 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, a semiconductor device includes a substrate and a semiconductor layer. The device further includes a first electrode layer that is...
2017/0263612 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor memory device includes a plurality of first electrode layers stacked in a first direction; a semiconductor layer extending in the first...
2017/0263611 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming...
2017/0263610 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
A semiconductor device includes a substrate, a memory structure and a capacitor structure including at least one array of capacitors. The memory structure is...
2017/0263609 SEMICONDUCTOR DEVICE
To provide a semiconductor device with excellent charge retention characteristics, an OS transistor is used as a transistor whose gate is connected to a node...
2017/0263608 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
The present invention provides a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a first transistor and a...
2017/0263607 METHOD FOR FABRICATING A DEVICE WITH A TENSILE-STRAINED NMOS TRANSISTOR AND A UNIAXIAL COMPRESSION STRAINED...
Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon...
2017/0263606 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a ...
2017/0263605 SEMICONDUCTOR DEVICE
Data hold time is controlled without excessively increasing a circuit area. A semiconductor device includes a data buffer and a flip-flop formed of fin. As a...
2017/0263604 ENLARGING SPACER THICKNESS BY FORMING A DIELECTRIC LAYER OVER A RECESSED INTERLAYER DIELECTRIC
The method may include steps of receiving a device that includes a source/drain, a gate, a gate spacer formed on a sidewall of the gate, and a dielectric...
2017/0263603 SEMICONDUCTOR DEVICE
The re-combination center introduction region has re-combination centers introduced therein so that a density of the re-combination centers in the ...
2017/0263602 FIN-TYPE RESISTOR
A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a fin extending away from a substrate, a...
2017/0263601 ELECTROSTATIC DISCHARGE DEVICES AND METHODS OF MANUFACTURE
Electrostatic discharge (ESD) devices and methods of manufacture are provided. The method includes forming a plurality of fin structures and a mesa structure...
2017/0263600 OLED LIGHTING DEVICE WITH SHORT TOLERANT STRUCTURE
An OLED panel having a plurality of OLED circuit elements is provided. Each OLED circuit element may include a fuse or other component that can be ablated or...
2017/0263599 ELECTROSTATIC DISCHARGE PROTECTION
A bipolar junction transistor is configured to provide electrostatic discharge (ESD) protection for an integrated circuit. The bipolar junction transistor...
2017/0263598 SEMICONDUCTOR DEVICE
A semiconductor device includes a first bidirectional diode of a ring shape surrounding a central region and including a first connection section and a second...
2017/0263597 NOVEL DUMMY GATE TECHNOLOGY TO AVOID SHORTING CIRCUIT
Semiconductor devices and method of manufacturing such semiconductor devices are provided for improved FinFET memory cells to avoid electric short often...
2017/0263596 EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICES AND METHOD FOR USE OF SAME FOR MANUFACTURING SEMICONDUCTOR...
Provided are an apparatus for manufacturing a semiconductor device and a method of manufacturing a semiconductor package using the same. The manufacturing...
2017/0263595 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a...
2017/0263594 LIGHT-MIXING MULTICHIP PACKAGE STRUCTURE
A light-mixing multichip package structure includes a circuit substrate, a first light-emitting module, a first package body, a second light-emitting module...
2017/0263593 TRANSFERRING METHOD, MANUFACTURING METHOD, DEVICE AND ELECTRONIC APPARATUS OF MICRO-LED
The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring...
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