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Patent # Description
2017/0294341 HIGH-CHI BLOCK COPOLYMERS FOR INTERCONNECT STRUCTURES BY DIRECTED SELF-ASSEMBLY
High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a...
2017/0294340 BULK TO SILICON ON INSULATOR DEVICE
A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of...
2017/0294339 METHODS FOR SiO2 FILLING OF FINE RECESSED FEATURES AND SELECTIVE SiO2 DEPOSITION ON CATALYTIC SURFACES
Methods for void-free SiO.sub.2 filling of fine recessed features and selective SiO.sub.2 deposition on catalytic surfaces are described. According to one...
2017/0294338 METHODS, APPARATUS AND SYSTEM FOR LOCAL ISOLATION FORMATION FOR FINFET DEVICES
At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) while reducing oxidization and fin critical...
2017/0294337 SEMICONDUCTOR DEVICES
Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer....
2017/0294336 DEVICES AND METHODS FOR DYNAMICALLY TUNABLE BIASING TO BACKPLATES AND WELLS
Devices and methods of fabricating integrated circuit devices for dynamically applying bias to back plates and/or p-well regions are provided. One method...
2017/0294335 SUBSTRATE CONVEYING ROBOT AND METHOD OF OPERATING THE SAME
A substrate conveying robot has left and right arms having a common pivot axis line, an arm drive unit for driving the left and right arms, and a control unit...
2017/0294334 CONVEYANCE SYSTEM, ROBOT, AND METHOD FOR CONTROLLING ROBOT
A conveyance system includes a conveyance chamber including a second side wall opposite to a first side wall in a depth direction of the conveyance chamber. A...
2017/0294333 VACUUM CHUCK PRESSURE CONTROL SYSTEM
Implementations described herein relate to pressure control for vacuum chuck substrate supports. In one implementation, a process chamber defines a process...
2017/0294332 CHUCK FOR EDGE BEVEL REMOVAL AND METHOD FOR CENTERING A WAFER PRIOR TO EDGE BEVEL REMOVAL
A chuck useful for supporting a wafer during an edge bevel removal (EBR) process comprises a rotatable center hub having a plurality of support arms extending...
2017/0294331 CORROSION-RESISTANT MEMBER, MEMBER FOR ELECTROSTATIC CHUCK, AND PROCESS FOR PRODUCING CORROSION-RESISTANT MEMBER
Provided are a corrosion-resistant member in which, in a case where the corrosion-resistant member is used as a member for an electrostatic chuck, an...
2017/0294330 ACTIVE SUBSTRATE ALIGNMENT SYSTEM AND METHOD
An active substrate alignment system for an ion implanter, the system including a platen, a registration device adapted to selectively move a substrate...
2017/0294329 WAFER SHIPPER WITH PURGE CAPABILITY
A purge configurable wafer shipper. The container includes an enclosure portion with an open side or bottom, a door to sealing close the open side or bottom....
2017/0294328 SUBSTRATE CONTAINER, LOAD PORT APPARATUS, AND SUBSTRATE TREATING APPARATUS
A substrate container includes a casing, a rack, a lid, a lid holder, and a substrate separating mechanism. The casing has on its front face an opening. The...
2017/0294327 SUBSTRATE CONTAINER
A front opening wafer container with a forward and rearward sets of stacked V-shaped wafer edge receiving portions, the rearward set part of a wafer shelf...
2017/0294326 SUBSTRATE CONTAINER WITH WINDOW RETENTION SPRING
A reticle container for containing a reticle including a base plate having one or more windows. Each of the windows can include mounting recess having a recess...
2017/0294325 SEMICONDUCTOR PROCESSING CHAMBER
A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall...
2017/0294324 COLLECTION CHAMBER APPARATUS TO SEPARATE MULTIPLE FLUIDS DURING THE SEMICONDUCTOR WAFER PROCESSING CYCLE
The wafer processing system includes a rotatable wafer support member for supporting a wafer and a plurality of collections trays disposed about a peripheral...
2017/0294323 CHEMICAL LIQUID PREPARATION METHOD OF PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, CHEMICAL LIQUID...
A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which...
2017/0294322 WIRING BOARD, ELECTRONIC DEVICE, AND ELECTRONIC MODULE
A wiring board (1) includes an insulating substrate (11) having a cutout (12) opened in a main surface and a side surface of the insulating substrate (11), and...
2017/0294321 Carrier-Less Silicon Interposer Using Photo Patterned Polymer as Substrate
A component, e.g., interposer has first and second opposite sides, conductive elements at the first side and terminals at the second side. The terminals can...
2017/0294320 HKMG INTEGRATION
A method for processing a semiconductor substrate is described herein. The method described herein includes generating fluorine radicals and ions, delivering...
2017/0294319 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by...
2017/0294318 SUBSTRATE PROCESSING DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND REACTION TUBE
A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate...
2017/0294317 PATTERNS FORMING METHOD
A patterns forming method begins with performing a lithography process on a photoresist film with a photomask having first apertures in a first mask region and...
2017/0294316 HYDROGENATION ANNEALING METHOD USING MICROWAVE
Provided is a hydrogenation annealing method using a microwave, which performs hydrogenation annealing at a low temperature and with low power in a...
2017/0294315 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A method is provided for fabricating a semiconductor structure. The method includes providing a substrate having a dielectric layer formed on the substrate,...
2017/0294314 GERMANIUM COMPOSITIONS SUITABLE FOR ION IMPLANTATION TO PRODUCE A GERMANIUM-CONTAINING ION BEAM CURRENT
The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF.sub.4 and an assistant species comprising...
2017/0294313 DEVICE FOR CONNECTING AT LEAST ONE NANO-OBJECT AND METHOD OF MANUFACTURING IT
Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer (4)...
2017/0294312 METHOD FOR BOTTOM-UP FORMATION OF A FILM IN A RECESSED FEATURE
Embodiments of the invention provide a substrate processing method for bottom-up formation of a film in a recessed feature. According to one embodiment, the...
2017/0294311 CUT FIRST SELF-ALIGNED LITHO-ETCH PATTERNING
The present disclosure relates to an integrated chip formed by a self-aligned litho-etch process. In some embodiments, the integrated chip has a first...
2017/0294310 SELF-ALIGNED SPACER FORMATION
A method of self-aligned spacer formation is described. According to one embodiment of the invention, a substrate processing method is provided, where the...
2017/0294309 OXIDIZING AND ETCHING OF MATERIAL LINES FOR USE IN INCREASING OR DECREASING CRITICAL DIMENSIONS OF HARD MASK LINES
A method includes, for example, providing a starting semiconductor structure having a plurality of material lines disposed over a hard mask, and the hard mask...
2017/0294308 PROTECTING, OXIDIZING, AND ETCHING OF MATERIAL LINES FOR USE IN INCREASING OR DECREASING CRITICAL DIMENSIONS OF...
A method includes, for example, a starting semiconductor structure comprising a plurality of material lines disposed over a hard mask, and the hard mask...
2017/0294307 FABRICATION OF SEMICONDUCTOR STRUCTURES
The invention relates to a method for fabricating a semiconductor circuit comprising providing a semiconductor substrate; fabricating a first semiconductor...
2017/0294306 FORMATION OF A LAYER ON A SEMICONDUCTOR SUBSTRATE
Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a...
2017/0294305 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a...
2017/0294304 OXIDIZING FILLER MATERIAL LINES TO INCREASE WIDTH OF HARD MASK LINES
A starting semiconductor structure includes a layer of filler material, a hard mask layer over the layer of filler material, and filler material lines over the...
2017/0294302 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including...
2017/0294301 METHOD OF GROWING A HIGH QUALITY III-V COMPOUND LAYER ON A SILICON SUBSTRATE
The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then...
2017/0294300 METHOD OF PROCESSING BONDED WAFER
A wafer is bonded to a support plate by cutting off, with a cutting blade, an annular portion of the bonded wafer which extends from the outer peripheral edge...
2017/0294299 METHOD FOR PRODUCING A SELF-ALIGNING MASKING LAYER
In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in...
2017/0294298 TIME-OF-FLIGHT MASS SPECTROMETER
Provided is a time-of-flight mass spectrometer including: an ionization part receiving electron beams to thereby emit ions; a cold electron supply part...
2017/0294297 SAMPLE PREPARATION METHOD AND SAMPLE PREPARATION DEVICE FOR MALDI INCLUDING DEPOSITING MATRIX SUBSTANCE ON...
After a sample such as a biomedical tissue section is attached to an electrically-conductive slide glass (S1), the film layer of a matrix substance is...
2017/0294296 Probe Adaptor Assembly
An apparatus for connecting an ionisation probe assembly to a mass and/or ion mobility spectrometer is disclosed. The apparatus comprises: an attachment member...
2017/0294295 METHODS AND DEVICES FOR PARALLEL ANALYSIS OF ION MOBILITY SPECTRUM AND MASS SPECTRUM
A method for parallel analysis in mass spectrometry and ion mobility spectrometry includes enabling a sample to be subjected to a chromatography separation;...
2017/0294294 DC Magnetron Sputtering
A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the...
2017/0294293 SYSTEMS AND METHODS FOR TUNING AN IMPEDANCE MATCHING NETWORK IN A STEP-WISE FASHION FOR MULTIPLE STATES OF AN...
Systems and methods for tuning an impedance matching network in a step-wise fashion for each state are described. By tuning the impedance matching network in a...
2017/0294292 PLASMA-ENHANCED ANNEAL CHAMBER FOR WAFER OUTGASSING
Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and...
2017/0294291 APPLICATION OF eBIP TO INSPECTION, TEST, DEBUG AND SURFACE MODIFICATIONS
An electron-beam induced plasma is utilized to establish a non-mechanical, electrical contact to a device of interest. This plasma source may be referred to as...
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