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Patent # Description
2017/0301834 CHIP SCALE LIGHT EMITTING DEVICE PACKAGE WITH DOME
Light Emitting Devices (LEDs) are fabricated on a wafer substrate with one or more thick metal layers that provide structural support to each LED. The streets,...
2017/0301833 QUANTUM DOTS (QD) GLASS CELLS, AND THE MANUFACTURING METHODS AND APPLICATIONS THEREOF
A QD glass cell includes a glass cell and QD fluorescent powder material. The glass cell includes a receiving chamber, and the QD fluorescent powder being...
2017/0301832 GLUELESS LIGHT EMITTING DEVICE WITH PHOSPHOR CONVERTER
A multi-stage lamination process is used to laminate a wavelength conversion film (220) to a transparent substrate (230), and subsequently to a light emitting...
2017/0301831 THIN FILM LIGHT EMITTING DIODE
A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based...
2017/0301830 LIGHT-EMITTING DIODE INCLUDING A PLURALITY OF LUMINESCENT REGIONS
Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality...
2017/0301829 SEMICONDUCTOR LIGHT-EMITTING DEVICE
According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The...
2017/0301828 LED PACKAGE
A method for manufacturing a light emitting diode (LED) die includes providing an LED die including a substrate, an N type semiconductor layer, an active...
2017/0301827 LIGHT EMITTING DIODE HAVING CARBON NANOTUBES
A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode,...
2017/0301826 LIGHT EMITTING DIODE WITH HIGH EFFICIENCY
A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor...
2017/0301825 MULTICOLOR LED AND METHOD OF FABRICATING THEREOF
A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of...
2017/0301824 OPTICAL DEVICE AND METHOD FOR ITS FABRICATION
An optical device comprising: a quantum dot, said quantum dot comprising InAs and adapted to emit radiation in the wavelength range from 1200 nm to 2000 nm;...
2017/0301823 NANOWIRE SIZED OPTO-ELECTRONIC STRUCTURE AND METHOD FOR MODIFYING SELECTED PORTIONS OF SAME
A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making...
2017/0301822 TILED SOLAR CELL LASER PROCESS
In an example, the present invention provides a method of separating a photovoltaic strip from a solar cell. The method includes providing a solar cell,...
2017/0301821 TILED SOLAR MODULE REPAIR PROCESS
In an example, a method includes providing a photovoltaic string comprising a plurality of from 2 to 45 strips, each of the plurality of strips being...
2017/0301820 SOLAR CELL PRODUCTION APPARATUS FOR PROCESSING A SUBSTRATE, AND METHOD FOR PROCESSING A SUBSTRATE FOR THE...
The present disclosure provides a solar cell production apparatus for processing a substrate. The solar cell production apparatus includes at least one...
2017/0301819 ANTENNA-ASSISTED PHOTOVOLTAIC GRAPHENE DETECTORS
A photovoltaic photodetector includes a substrate, a graphene layer, and a dielectric layer positioned between the substrate and the graphene layer. One or...
2017/0301818 ACTIVE PHOTONIC DEVICE HAVING A DARLINGTON CONFIGURATION WITH FEEDBACK
Disclosed is an active photonic device having a Darlington configuration with a substrate and a collector layer that is over the substrate. The collector layer...
2017/0301817 GERMANIUM DEVICES ON AMORPHOUS SUBSTRATES
A germanium metal-semiconductor-metal (MSM) photodetector is fabricated by growing crystalline germanium from an amorphous silicon seed, supported by an...
2017/0301816 SINGLE PHOTON AVALANCHE DIODE HAVING PULSE SHAPING FILTER
An electronic device disclosed herein includes a single photon avalanche diode (SPAD) configured to detect an incoming photon and to generate a first pulse...
2017/0301815 SOLAR-CELL MODULE
This solar-cell module and method is provided with a plurality of solar cells and a connecting member that connects the light-receiving-surface side of one...
2017/0301814 HORIZONTAL BALANCED SOLAR TRACKER
In an example, the present invention provides a solar tracker apparatus. In an example, the apparatus comprises a center of mass with an adjustable hanger...
2017/0301813 SEALING MATERIAL FOR SOLAR CELL MODULES, AND MANUFACTURING METHOD THEREOF
Disclosed are a sealing material for solar cell modules and a manufacturing method thereof capable of endowing good transparency and heat resistance to the...
2017/0301812 SOLAR POWER MODULE
A solar power module includes a solar panel, a metallic frame, a soft insulation glue material, and a hard insulation spacer. The solar panel is embedded in...
2017/0301811 SOLAR CELL BONDED TO A FLEXIBLE SUPPORT
A solar cell assembly in which a solar cell component is bonded to a flexible support is disclosed. The solar cell assembly comprises a flexible support with a...
2017/0301810 HIGH EFFICIENCY PHOTOVOLTAIC CELLS AND MANUFACTURING THEREOF
This invention relates to a novel structure of photovoltaic devices (e.g. photovoltaic cells also called as solar cells) are provided. The cells are based on...
2017/0301809 DUAL WAVELENGTH IMAGING CELL ARRAY INTEGRATED CIRCUIT
A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of...
2017/0301808 MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM
Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material...
2017/0301807 PRECURSOR FOR PREPARING LIGHT ABSORPTION LAYER OF SOLAR CELLS AND METHOD OF PREPARING THE SAME
Disclosed are a precursor for preparing a light absorption layer of a solar cell including (a) an aggregate-phase composite including a first phase including a...
2017/0301806 METAL CHALCOGENIDE NANOPARTICLES FOR PREPARING LIGHT ABSORPTION LAYER OF SOLAR CELLS AND METHOD OF PREPARING...
Disclosed are metal chalcogenide nanoparticles forming a light absorption layer of solar cells including a first phase including copper (Cu)-tin (Sn)...
2017/0301805 SOLAR CELL MANUFACTURING METHOD AND SOLAR CELL
A solar cell manufacturing method including: forming, on one surface of a first conductivity-type semiconductor substrate, a first doped layer in which second...
2017/0301804 CONDUCTIVE PASTE COMPOSITION AND SEMICONDUCTOR DEVICES MADE THEREWITH
The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The...
2017/0301803 CONDUCTIVE THICK FILM PASTE FOR SOLAR CELL CONTACTS
The present invention relates to an inorganic reaction system used in the manufacture of electroconductive pastes. The inorganic reaction system comprises a...
2017/0301802 SOLAR MODULE HAVING A PLURALITY OF STRINGS CONFIGURED FROM A FIVE STRIP CELL
In an example, the present invention provides a method of manufacturing a solar module. The method includes providing a substrate member having a surface...
2017/0301801 PHOTOVOLTAIC STRUCTURES WITH INTERLOCKING BUSBARS
One embodiment can provide a current-collecting mechanism of a photovoltaic structure. The current-collecting mechanism can include a top metallic grid...
2017/0301800 TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTTKY DIODE
A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor...
2017/0301799 HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUNCTION LEAKAGE CURRENT
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with...
2017/0301798 HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with...
2017/0301797 SEMICONDUCTOR DEVICE
The semiconductor device includes an oxide semiconductor layer including a plurality of channel formation regions arranged in the channel width direction and...
2017/0301796 SEMICONDUCTOR DEVICE
Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a...
2017/0301795 FIN FIELD EFFECT TRANSISTOR
A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate comprises a plurality of trenches and at least one...
2017/0301794 STRAINED STRUCTURE OF A SEMICONDUCTOR DEVICE
A p-type field effect transistor includes a pair of spacers over a substrate top surface. The p-type field effect transistor includes a channel recess cavity...
2017/0301793 FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A method of fabricating a FinFET includes at last the following steps. A <551> direction is determined by tilting 8.05.+-.2 degrees from a normal vector...
2017/0301792 Semiconductor Devices and a Method for Forming a Semiconductor Device
A semiconductor device includes a gate trench of at least one transistor structure extending into a semiconductor substrate. The gate trench includes at least...
2017/0301791 Method for Manufacturing an Integrated Circuit Including a Lateral Trench Transistor and a Logic Circuit Element
A method of forming an integrated circuit includes forming gate trenches in the first main surface of a semiconductor substrate, the gate trenches being formed...
2017/0301790 METHOD OF PRODUCING A SYMMETRIC LDMOS TRANSISTOR
A well of a first type of conductivity is formed in a semiconductor substrate, and wells of a second type of conductivity are formed in the well of the first...
2017/0301788 SEMICONDUCTOR DEVICE
A trench-gate semiconductor device including an outside trench, increases reliability of an insulating film at a corner of an open end of the outside trench....
2017/0301787 SEMICONDUCTOR DEVICE INCLUDING A STACKED WIRE STRUCTURE
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a stacked wire structure formed over the substrate....
2017/0301786 SELF ALIGNED EPITAXIAL BASED PUNCH THROUGH CONTROL
A method of forming a semiconductor device that may include etching source and drain portions of a fin structure of a first semiconductor material selectively...
2017/0301785 EPI BLOCK STRUCTURE IN SEMICONDUCTOR PRODUCT PROVIDING HIGH BREAKDOWN VOLTAGE
The present disclosure is generally directed to semiconductor structures and methods that improve breakdown characteristics in finFET device designs, while...
2017/0301784 Semiconductor Device Having Field-Effect Structures with Different Gate Materials
A semiconductor device includes a plurality of first field-effect structures each including a polysilicon gate arranged on and in contact with a first gate...
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