Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
2017/0301783 SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
A silicon carbide semiconductor device includes an ohmic electrode and a Schottky electrode that are in contact with the drain electrode respectively on the...
2017/0301782 SEMICONDUCTOR DEVICE
To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode...
2017/0301781 HIGH-VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTORS
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of...
2017/0301780 HIGH-VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTORS WITH REDUCED LEAKAGE CURRENT
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of...
2017/0301779 SEMICONDUCTOR APPARATUS
A semiconductor apparatus comprises a semiconductor substrate, a dummy trench section which is formed in a front surface of the semiconductor substrate, and a...
2017/0301778 SPIN CONTROL ELECTRONIC DEVICE OPERABLE AT ROOM TEMPERATURE
A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a...
2017/0301777 FABRICATION METHOD OF THIN FILM TRANSISTOR, FABRICATION METHOD OF ARRAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY...
A fabrication method of a thin film transistor, a fabrication method of an array substrate, a display panel, and a display device are provided. The fabrication...
2017/0301776 METHODS OF FORMING A GATE STRUCTURE ON A VERTICAL TRANSISTOR DEVICE
One illustrative method disclosed herein includes forming a multi-layered sidewall spacer (MLSS) around a vertically oriented channel semiconductor structure,...
2017/0301775 SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
A semiconductor arrangement and method of formation are provided. The semiconductor arrangement comprises a conductive contact in contact with a substantially...
2017/0301774 METHODS TO ENHANCE EFFECTIVE WORK FUNCTION OF MID-GAP METAL BY INCORPORATING OXYGEN AND HYDROGEN AT A LOW...
A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work...
2017/0301773 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, and a gate capping pattern on...
2017/0301772 GaN DEVICES FABRICATED VIA WAFER BONDING
A wafer bonding technique to fabricate GaN devices is disclosed. In this technique, a GaN layer (or a GaN stack including at least one GaN layer) is fabricated...
2017/0301771 TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity...
2017/0301770 STRESS RETENTION IN FINS OF FIN FIELD-EFFECT TRANSISTORS
Embodiments of the present invention provide a structure and method of minimizing stress relaxation during fin formation. Embodiments may involve forming a...
2017/0301769 Semiconductor Device and Method of Manufacturing the Semiconductor Device
In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer...
2017/0301768 N-Work Function Metal with Crystal Structure
A method includes forming a dummy gate stack over a semiconductor substrate, wherein the semiconductor substrate is comprised in a wafer. The method further...
2017/0301767 HYBRID SOURCE AND DRAIN CONTACT FORMATION USING METAL LINER AND METAL INSULATOR SEMICONDUCTOR CONTACTS
An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor...
2017/0301766 COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR
A connection portion (88) in a gate electrode connecting wire (85), which connects the gate electrode connecting wire (85) defining a substantially rectangular...
2017/0301765 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The...
2017/0301764 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device with a high radiation tolerance is provided. A semiconductor device comprising a semiconductor substrate, a first body region and a...
2017/0301763 Power Semiconductor Device Trench Having Field Plate and Gate Electrode
A method of processing a power semiconductor device includes: providing a semiconductor body with a trench extending into the semiconductor body along an...
2017/0301762 FinFET with Trench Field Plate
An integrated circuit device includes a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second...
2017/0301761 GaN SEMICONDUCTOR DEVICE COMPRISING CARBON AND IRON
A semiconductor device includes: a substrate; a first GaN layer on the substrate and containing carbon; a second GaN layer on the first GaN layer and...
2017/0301760 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, AND VEHICLE
A semiconductor device according to embodiments described herein includes a p-type SiC layer, a gate electrode, and a gate insulating layer between the SiC...
2017/0301759 STACKED BODY AND ELECTRONIC DEVICE
A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20.degree. or less with a carbon plane; and a...
2017/0301758 STACKED BODY AND ELECTRONIC DEVICE
A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20.degree. or less with a silicon plane; and a...
2017/0301757 SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND REPLACEMENT METAL GATE STRUCTURE AND RELATED METHODS
A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (STI) regions in the...
2017/0301756 LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOUND BURIED OXIDE
A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a...
2017/0301755 LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOUND BURIED OXIDE
A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a...
2017/0301754 ISOLATED WELL CONTACT IN SEMICONDUCTOR DEVICES
An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of...
2017/0301753 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate in which an active region and an edge termination region are defined, a semiconductor element formed...
2017/0301752 Vertical Semiconductor Structure
A diode includes upper and lower electrodes and first and second N-type doped semiconductor substrate portions connected to the lower electrode. A first...
2017/0301751 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode...
2017/0301750 MEMORY DEVICES INCLUDING CAPACITOR STRUCTURES HAVING IMPROVED AREA EFFICIENCY
Semiconductor structures including a plurality of conductive structures having a dielectric material therebetween are disclosed. The thickness of the...
2017/0301749 HIGH-DENSITY MIM CAPACITORS
Capacitors and methods of forming the same include forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more...
2017/0301748 DEVICES, SYSTEMS, AND METHODS FOR ION TRAPPING
Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.
2017/0301747 METAL RESISTORS HAVING NITRIDIZED METAL SURFACE LAYERS WITH DIFFERENT NITROGEN CONTENT
A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The...
2017/0301746 METAL RESISTORS HAVING NITRIDIZED DIELECTRIC SURFACE LAYERS AND NITRIDIZED METAL SURFACE LAYERS
A semiconductor structure containing at least two metal resistor structures having different resistivities is provided and includes a first metal resistor...
2017/0301745 METAL RESISTORS HAVING VARYING RESISTIVITY
A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal...
2017/0301744 DISPLAY PANEL
A display panel includes a substrate, a plurality of first electrode series, a plurality of first electrode series and a plurality of conducting wires. The...
2017/0301743 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device includes a substrate, a buffer layer, an active layer, a gate insulation layer, a protective insulating layer, a gate...
2017/0301742 ORGANIC LIGHT-EMITTING DIODE DISPLAY
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a unit pixel over the stretchable...
2017/0301741 TEST ELEMENT GROUP, METHOD OF TESTING ELECTRICAL CHARACTERISTICS OF SEMICONDUCTOR ELEMENTS, AND FABRICATING...
The present application discloses an array substrate having a plurality of semiconductor elements and a plurality of test electrodes. Each of the plurality of...
2017/0301740 METHOD FOR MANUFACTURING ORGANIC EL DISPLAY PANEL
Forming functional layers including functional material in application regions by applying ink to the application regions then drying the ink, which contains...
2017/0301739 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE
An organic light emitting device includes a first substrate including a display area and a non-display area, and a dummy metal layer disposed o the first...
2017/0301738 P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING P-TYPE...
A p-type oxide semiconductor, which contains: a metal oxide containing thallium (Tl), where the metal oxide has been hole doped.
2017/0301737 SUBPIXEL ARRANGEMENTS OF DISPLAYS AND METHOD FOR RENDERING THE SAME
An apparatus including a display and control logic is provided. In one example, the display includes an array of subpixels having a plurality of zigzag...
2017/0301736 DISPLAY DEVICE AND FABRICATION METHOD THEREOF
A display device and fabrication method thereof are provided. The display device includes an encapsulation film encapsulating a thin film transistor array and...
2017/0301735 CHARGE INTEGRATING DEVICES AND RELATED SYSTEMS
An organic charge integrating device is presented. The organic charge integrating device includes a thin film transistor (TFT) array, a first electrode layer...
2017/0301734 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR ELEMENT AND MANUFACTURE METHOD THEREOF
Disclosed is a CMOS element. The CMOS element comprises a substrate, a first metal layer, an insulation layer and a first type metal oxide semiconductor layer;...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.