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Patent # Description
2017/0301581 METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING FIN-SHAPED ACTIVE REGIONS
A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a...
2017/0301580 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an...
2017/0301579 TEMPERATURE CONTROL DEVICE FOR PROCESSING TARGET OBJECT AND METHOD OF SELECTIVELY ETCHING NITRIDE FILM FROM...
A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a...
2017/0301578 FOCUS RING ASSEMBLY AND A METHOD OF PROCESSING A SUBSTRATE USING THE SAME
A method of processing a substrate including loading the substrate into a plasma-processing apparatus. The plasma-processing apparatus includes a focus ring....
2017/0301577 METHODS OF FORMING 3-D CIRCUITS WITH INTEGRATED PASSIVE DEVICES
Methods of forming 3-D ICs with integrated passive devices (IPDs) include stacking separately prefabricated substrates. An active device (AD) substrate has...
2017/0301576 SUBSTRATE HANDLING SYSTEM FOR ALIGNING AND ORIENTING SUBSTRATES DURING A TRANSFER OPERATION
A system for sensing, orienting, and transporting wafers in an automated wafer handling process that reduces the generation of particles and contamination so...
2017/0301574 RECIPE ID MANAGEMENT SERVER, RECIPE ID MANAGEMENT SYSTEM, AND TERMINAL DEVICE
When receiving a partial ID request from a terminal device, a partial ID transmission unit reads out one or more partial IDs, of which each is a part of a...
2017/0301573 NOZZLE AND WORK POLISHING APPARATUS
A nozzle according to the invention includes a liquid flow passage through which a liquid flows, a gas flow passage through which a gas flows, the gas flow...
2017/0301572 Systems and Methods for Annealing Semiconductor Structures
Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure...
2017/0301571 WAFER PROCESSING METHOD
Disclosed herein is a wafer processing method for removing an annular reinforcing portion from a wafer having a device area, the annular reinforcing portion...
2017/0301570 WAFER CASSETTE AND PLACEMENT METHOD THEREOF
A wafer cassette and a method for placing a wafer are provided. The wafer cassette includes a box body including a plurality of groups of card slots formed on...
2017/0301569 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING DRY ETCHING
A method of fabricating a semiconductor device includes forming a material layer and a mask pattern on a substrate, mounting the substrate onto an...
2017/0301568 GAS SUPPLY MECHANISM AND SEMICONDUCTOR MANUFACTURING SYSTEM
The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The...
2017/0301567 SYSTEM OF CONTROLLING TREATMENT LIQUID DISPENSE FOR SPINNING SUBSTRATES
Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a...
2017/0301566 LOWER PLASMA-EXCLUSION-ZONE RINGS FOR A BEVEL ETCHER
A lower plasma-exclusion-zone ring for a bevel etcher is provided that is configured to etch a bevel edge of a substrate. The lower plasma-exclusion-zone ring...
2017/0301565 UPPER PLASMA-EXCLUSION-ZONE RINGS FOR A BEVEL ETCHER
An upper plasma-exclusion-zone ring for a bevel etcher is provided that is configured to etch a bevel edge of a substrate. The upper plasma-exclusion-zone ring...
2017/0301564 Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip
The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding...
2017/0301563 WAFER CARRIER ASSEMBLY
A wafer carrier assembly includes a wafer carrier and a fluid passage. The wafer carrier comprises a retainer ring confining a wafer accommodation space. The...
2017/0301562 Semiconductor Structure and Method of Forming
A structure and method of forming are provided. The structure includes a dielectric layer disposed on a substrate. The structure includes a cavity in the...
2017/0301561 HIGH-FREQUENCY MODULE
On a substrate (200), a resistor (24R) is disposed between a position of an amplifier circuit (11) and a position of a duplexer (24), thereby reducing coupling...
2017/0301560 SYSTEM AND METHOD FOR LASER ASSISTED BONDING OF SEMICONDUCTOR DIE
A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods...
2017/0301559 METHOD OF ATTACHING COMPONENTS TO PRINTED CIRUCUIT BOARD WITH REDUCED ACCUMULATED TOLERANCES
A method is provided for attaching components to pads on a PCB, where total accumulated tolerances are reduced by separating accumulated tolerances into...
2017/0301558 WIRING SUBSTRATE, METHOD OF MANUFACTURING WIRING SUBSTRATE, COMPONENT-EMBEDDED GLASS SUBSTRATE, AND METHOD OF...
A method of manufacturing a wiring substrate that has a wiring including a through glass via and is formed of a glass substrate includes forming an alteration...
2017/0301557 Method of Integration Process for Metal CMP
A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate. The substrate has an edge region...
2017/0301556 DEVICE CONFORMITY CONTROL BY LOW TEMPERATURE, LOW PRESSURE, INDUCTIVELY COUPLED AMMONIA-NITROGEN TRIFLUORIDE PLASMA
The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of...
2017/0301555 Stacked Nanowires
Techniques for producing stacked SiGe nanowires using a condensation process without parasitic Ge nanowires as an undesired by-product. In one aspect, a method...
2017/0301554 Stacked Nanowires
Techniques for producing stacked SiGe nanowires using a condensation process without parasitic Ge nanowires as an undesired by-product. In one aspect, a method...
2017/0301553 CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING THE SAME, CLEANING METHOD AFTER CHEMICAL...
A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle...
2017/0301552 Method for Patterning a Substrate Using a Layer with Multiple Materials
Techniques disclosed herein provide a method of patterning for creating high-resolution features and also for cutting on pitch of sub-resolution features....
2017/0301551 FABRICATION OF MULTI THRESHOLD-VOLTAGE DEVICES
A method of fabricating multi V.sub.th devices and the resulting device are disclosed. Embodiments include forming a high-k dielectric layer over a substrate;...
2017/0301550 METHOD FOR PREFERENTIAL OXIDATION OF SILICON IN SUBSTRATES CONTAINING SILICON AND GERMANIUM
A method for preferential oxidation of silicon in substrates containing silicon (Si) and germanium (Ge) is described. According to one embodiment, the method...
2017/0301549 METHOD OF PROCESSING SiC WAFER
A SiC wafer is processed by a laser beam having a wavelength that transmits SiC to form a peeling plane in a region of the wafer which corresponds to a device...
2017/0301548 INTEGRATED CIRCUITS WITH BACKSIDE METALIZATION AND PRODUCTION METHOD THEREOF
An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated...
2017/0301547 METHOD FOR MANUFACTURING NONVOLATILE MEMORY THIN FILM DEVICE BY USING NEUTRAL PARTICLE BEAM GENERATION APPARATUS
The present invention relates to a method for manufacturing a nonvolatile memory thin film device by using a neutral particle beam generation apparatus. The...
2017/0301546 DIELECTRIC STRUCTURES FOR NITRIDE SEMICONDUCTOR DEVICES
A dielectric structure for a nitride semiconductor device and a method of forming the same. A semiconductor device includes at least one semiconductor layer....
2017/0301545 TRANSISTOR AND FABRICATION METHOD THEREOF
A transistor and a method of forming the transistor are provided. The method includes forming a first interlayer dielectric layer on a substrate, forming an...
2017/0301544 METHOD AND APPARATUS FOR REDUCING THRESHOLD VOLTAGE MISMATCH IN AN INTEGRATED CIRCUIT
A method of making a transistor for an integrated circuit includes providing a substrate and forming a dummy gate for the transistor within a gate trench on...
2017/0301543 Method of Fabricating Semiconductor Device
A method for fabricating a semiconductor device includes forming a first material layer over a substrate, forming a middle layer over the first material layer,...
2017/0301542 COMBINED ANNEAL AND SELECTIVE DEPOSITION PROCESS
A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or...
2017/0301541 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
The present invention provides a semiconductor device manufacturing method for lowering the technical difficulties of a process forming a horizontal single...
2017/0301540 SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD
A substrate treating apparatus including an unloading order changing unit. The unloading order changing unit reverses an order, in regard to unloading of...
2017/0301539 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device includes forming a film on a substrate by overlapping the following during at least a certain period: (a)...
2017/0301538 DEPOSITION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for...
2017/0301537 ULTRA-CONFORMAL CARBON FILM DEPOSITION
Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial...
2017/0301536 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a...
2017/0301535 NITRIDE SEMICONDUCTOR DEVICE
A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride...
2017/0301534 SUBSTRATE LIQUID PROCESSING METHOD, SUBSTRATE LIQUID PROCESSING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM...
This liquid treatment method for substrates involves performing: a liquid treatment step for liquid-treating a substrate with a treatment liquid; a rinse...
2017/0301533 METHOD FOR PROCESSING SEMICONDUCTOR WAFER, METHOD FOR MANUFACTURING BONDED WAFER, AND METHOD FOR MANUFACTURING...
Method for processing a semiconductor-wafer having a front surface, back surface, and chamfered-portion composed of a chamfered surface on the front surface...
2017/0301532 ION TRAP DESIGN METHOD AND ION TRAP MASS SPECTROMETER
In a three-dimensional quadrupole-type ion trap, a shape and an arrangement of the ring electrode and the end cap electrodes 11 and 12 are shifted from an...
2017/0301531 ION MOBILITY SPECTROMETER
An offset voltage adjusting portion is provided in an amplifying portion for applying respective pulse voltages to a pair of grid electrodes that structures a...
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