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Patent # Description
2017/0309504 SUBSTRATE PROCESSING SYSTEM
A substrate processing system is provided. The substrate processing system includes: a first transfer apparatus; at least two first accommodating units...
2017/0309502 PROCESS SYSTEM AND OPERATION METHOD THEREOF
A process system includes a substrate, first wafers, second wafers, and a roller. The first wafers are arranged at predetermined intervals along a first column...
2017/0309501 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and...
2017/0309500 Multi-Zone Gas Distribution Plate (GDP) and a Method for Designing the Multi-Zone GDP
A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas...
2017/0309499 POWER-MODULE SUBSTRATE WITH COOLER AND METHOD OF PRODUCING THE SAME
Preventing a deformation when a metal layer made of copper or copper alloy is brazed on an aluminum-made cooler, a power-module substrate with cooler having...
2017/0309498 SEMICONDUCTOR MODULE AND CONDUCTIVE MEMBER FOR SEMICONDUCTOR MODULE
A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that...
2017/0309497 METHOD FOR MANUFACTURING A RESISTIVE DEVICE FOR A MEMORY OR LOGIC CIRCUIT
A method for manufacturing a resistive device, includes depositing a first electrically conductive layer on a substrate; forming an etching mask on the first...
2017/0309496 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A semiconductor device manufacturing method, sequentially includes a semiconductor element preparation step of preparing a first semiconductor element on which...
2017/0309495 Double Patterning Method
In some embodiments, the disclosure relates to a method of forming an integrated circuit. The method is performed by forming a first mask layer over a...
2017/0309494 CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS
Embodiments of the invention provide a non-uniform substrate polishing apparatus that includes a polishing pad with two or more zones, each zone adapted to...
2017/0309493 METHOD FOR FORMING ORGANIC FILM AND METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR APPARATUS
The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition...
2017/0309492 REMOVAL LIQUID AND METHOD FOR REMOVING OXIDE OF GROUP III-V ELEMENT, TREATMENT LIQUID FOR TREATING COMPOUND OF...
Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a...
2017/0309491 METHOD OF FORMING TUNGSTEN FILM AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
A method of forming a tungsten film including disposing a substrate inside a process chamber; performing a tungsten nucleation layer forming operation for...
2017/0309490 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a...
2017/0309489 LIGHT IRRADIATION TYPE HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS
A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the...
2017/0309488 METHOD OF MAKING SEMICONDUCTOR FERROELECTRIC MEMORY ELEMENT, AND SEMICONDUCTOR FERROELECTRIC MEMORY TRANSISTOR
[Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to...
2017/0309487 STRUCTURES AND METHODS FOR EQUIVALENT OXIDE THICKNESS SCALING ON SILICON GERMANIUM CHANNEL OR III-V CHANNEL OF...
A method of forming a semiconductor device that includes forming a metal oxide material on a III-V semiconductor channel region or a germanium containing...
2017/0309486 MEMORY DEVICE
A method of manufacturing a memory device includes: providing a substrate; forming in a cell region a channel extending in a direction perpendicular to an...
2017/0309485 APPARATUS FOR SEMICONDUCTOR WAFER TREATMENT AND SEMICONDUCTOR WAFER TREATMENT
An apparatus for semiconductor wafer treatment includes a wafer holding unit configured to receive a single wafer, at least a solution supply unit configured...
2017/0309484 Carbon Vacancy Defect Reduction Method for SiC
A method of defect reduction for a SiC layer includes activating dopants disposed in the SiC layer, depositing a carbon-rich layer on the SiC layer after...
2017/0309483 MANUFACTURING OF SILICON STRAINED IN TENSION ON INSULATOR BY AMORPHISATION THEN RECRYSTALLISATION
Method for making a strained silicon structure, wherein a silicon germanium layer is formed on the silicon layer, followed by another layer with a lower...
2017/0309482 Method For Manufacturing A Semiconductor Device And Semiconductor Device
This invention is directed toward a method for manufacturing a semiconductor device with a heterostructure comprises covering a semiconductor structure with a...
2017/0309481 Method for Producing a Plurality of Semiconductor Chips and Semiconductor Chip
A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth...
2017/0309480 EPITAXIAL FILM FORMING METHOD, SPUTTERING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING...
The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an...
2017/0309479 SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER
Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation...
2017/0309478 ETCHING METHOD
An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas...
2017/0309477 A METHOD FOR FORMING A GRADIENT THIN FILM BY SPRAY PYROLYSIS
The present invention proposes a method to form a gradient thin film using a spray pyrolysis technique. The method comprises providing a base substrate,...
2017/0309476 Doped And Undoped Vanadium Oxides For Low-K Spacer Applications
A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the...
2017/0309475 ELECTRODE MANUFACTURING METHOD FOR IMPROVING BATTERY CAPACITY AND ELECTRODE MANUFACTURED THEREBY
The present invention relates to an electrode manufacturing method, an electrode manufactured thereby, and a battery comprising the same, the electrode...
2017/0309474 METAL INTERCONNECT STRUCTURE
A method is provided for fabricating a metal interconnect structure. The method includes forming a reticle having a metal line pattern region and at least a...
2017/0309473 METHOD AND APPARATUS FOR TREATING SUBSTRATE
Disclosed are a method and an apparatus for applying a liquid onto a substrate. The method for treating a substrate, the method includes: a liquid supplying...
2017/0309472 SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS
An ultrasonic wave applying liquid is supplied to one principal surface of a substrate while a liquid film of a first liquid being formed on another principal...
2017/0309471 DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as...
2017/0309470 PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties, Methods of Making a PVDF-TrFE Co-Polymer Having...
A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or...
2017/0309469 METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side...
2017/0309468 CLEANING SOLUTION, METHOD OF REMOVING A REMOVAL TARGET AND METHOD OF ETCHING A SUBSTRATE USING SAID CLEANING...
A cleaning liquid which includes 3-alkoxy-3-methyl-1-butanol represented by the following general formula (1); at least one of diethylene glycol monomethyl...
2017/0309467 LAMP WITH HEAT-SHIELDING ELEMENT
A lamp has a light emitting element within a sealed transparent vessel. The vessel comprises a cylindrical section with a longitudinal axis L in parallel to a...
2017/0309466 FLASH DISCHARGE TUBE AND LIGHT-EMITTING DEVICE EQUIPPED WITH THE FLASH DISCHARGE TUBE
A flash discharge tube includes tungsten pins configuring a pair of discharge electrodes, and an envelope. The envelope includes a central region, serving as...
2017/0309465 Dual Mode Ionization Device
An ion source is disclosed that alternates between ionizing analytes in a sample by electrospray ionization and impact ionization.
2017/0309464 METHODS AND APPARATUSES RELATING TO CLEANING AN ION SOURCE
A method of cleaning an ion source. The method includes: at a first reflective surface of a mirror, reflecting light that has a wavelength in a first...
2017/0309463 SYSTEMS AND METHODS FOR TRACE CHEMICAL DETECTION USING DUAL PHOTOIONIZATION SOURCES
A dual source ionizer is provided. The dual source ionizer includes a first photoionization source configured to emit low flux ultraviolet (UV) light to...
2017/0309462 Mass spectrometry analysis of microorganisms in samples
The invention generally relates to systems and methods for mass spectrometry analysis of microorganisms in samples.
2017/0309461 ION TRANSFER TUBE WITH SHEATH GAS FLOW
An ion transfer tube assembly, a mass spectrometry system, and a method for providing an ion stream to an ion detection device are described that include using...
2017/0309460 NIOBIUM OXIDE SINTERED COMPACT, SPUTTERING TARGET FORMED FROM SAID SINTERED COMPACT, AND METHOD OF PRODUCING...
The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide...
2017/0309459 Method and Device for Particle Measurement
Provided are a method and a device that can measure sputtered particles discharged by sputtering with high precision within a short time. A measuring device...
2017/0309458 PLASMA DEVICE DRIVEN BY MULTIPLE-PHASE ALTERNATING OR PULSED ELECTRICAL CURRENT
A plasma source is provided. The plasma source includes at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third...
2017/0309457 SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus includes a chamber in which a first processing space, a second processing space, a connecting space connecting the first...
2017/0309456 Toroidal Plasma Channel with Varying Cross-Section Areas Along the Channel
An assembly for adjusting gas flow patterns and gas-plasma interactions including a toroidal plasma chamber. The toroidal plasma chamber has an injection...
2017/0309455 PLASMA APPARATUS
A plasma apparatus configured to form a film on or etch a work piece includes: a vacuum chamber including a first casing that has a first recess and a first...
2017/0309454 Negative Ribbon Ion Beams from Pulsed Plasmas
An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna...
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