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Patent # Description
2017/0317256 LIGHT EMITTING DIODES WITH ENHANCED THERMAL SINKING AND ASSOCIATED METHODS OF OPERATION
Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a...
2017/0317255 LIGHT-EMITTING ARRAY
The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line...
2017/0317254 LED CHIP INTEGRATED WITH HYBRID SENSOR AND METHOD OF FABRICATING THE SAME
The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure...
2017/0317253 LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS INCLUDING THE PACKAGE
Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first...
2017/0317252 LIGHT-EMITTING DEVICE PACKAGE AND LIGHT-EMITTING APPARATUS COMPRISING SAME
A light-emitting device package according to an embodiment provides a light-emitting device including a light-emitting structure having a first conductive...
2017/0317250 SUBSTRATE, LIGHT-EMITTING DEVICE, AND ILLUMINATING APPARATUS
Provided is a substrate having dielectric strength and light reflectivity, as well as excellent mass productivity. A substrate (10) for mounting a...
2017/0317249 BACKLIGHT UNIT AND SIDE VIEW LIGHT-EMITTING DIODE PACKAGE
A backlight unit and a side view light-emitting diode package are disclosed. The backlight unit includes: a light guide plate; and a light-emitting diode...
2017/0317248 LIGHT EMITTING DEVICE PACKAGE
Embodiments of the present invention relate to a light emitting device package having uniform color characteristics, wherein the light emitting device package...
2017/0317247 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING GANG BONDING AND SEMICONDUCTOR DEVICE FABRICATED BY THE SAME
A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor...
2017/0317246 LAYERED STRUCTURES AND QUANTUM DOT SHEETS AND ELECTRONIC DEVICES INCLUDING THE SAME
A layered structure having a first layer including a polymerization product of a monomer combination including a first monomer having at least two thiol groups...
2017/0317245 METHOD OF APPLYING A MATERIAL TO A SURFACE
A method of applying a first material to a surface in a plurality of mutually separate coating regions includes: A) providing the surface containing the...
2017/0317244 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit...
2017/0317243 LIGHT EMITTING DIODE PACKAGE MODULE AND DISPLAY DEVICE HAVING THE SAME
Disclosed herein are an LED package module capable of lowering the price of manufacture by simply reducing the number of LED packages without decreasing the...
2017/0317242 Light Emitting Device and Fluidic Manufacture Thereof
Light emitting devices and methods for their manufacture are provided. According to one aspect, a light emitting device is provided that comprises a substrate...
2017/0317241 LIGHT EMITTING DEVICE
A light emitting device includes a light emitting chip which generates a first light having a first color, a first cavity layer disposed on the light emitting...
2017/0317240 OPTOELECTRONIC SEMICONDUCTOR CHIP
An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor...
2017/0317239 LEDS WITH EFFICIENT ELECTRODE STRUCTURES
Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated...
2017/0317238 LIGHT EMITTING DEVICE
The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first...
2017/0317237 LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY
Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide...
2017/0317236 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A nitride semiconductor light emitting device may include: a semiconductor layer; an active layer; a second semiconductor layer; mesa regions formed to expose...
2017/0317235 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A nitride semiconductor light-emitting element at least includes an underlayer, an n-type contact layer, a light-emitting layer, and a p-type nitride...
2017/0317234 MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
There are provided a setting process configured to set in a chamber an aluminum nitride substrate in which a semiconductor layer is formed on a first principal...
2017/0317233 OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
An optoelectronic component includes an optoelectronic semiconductor chip including first and second electrical contacts, a first leadframe section including a...
2017/0317232 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light...
2017/0317231 METHOD OF DETACHING A SUBSTRATE, DEVICE THAT CARRIES OUT SUCH A METHOD AND PUMPING DEVICE THAT PUMPS ETCHING...
A method of debonding a substrate from a layer sequence includes a) providing a composite including a wafer with the substrate, the layer sequence applied to a...
2017/0317230 SUPPORTING SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR APPARATUS COMPRISING THE SAME, AND METHOD FOR...
The present disclosure relates to a method for manufacturing a semiconductor light emitting device, a semiconductor device including the supporting substrate,...
2017/0317229 UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION
A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer...
2017/0317228 MICRO-LED ELEMENT FOR HORIZONTALLY-ALIGNED ASSEMBLY, METHOD FOR MANUFACTURING SAME, AND HORIZONTALLY-ALIGNED...
The present invention relates to a nano-scale light-emitting diode (LED) element for a horizontal array assembly, a manufacturing method thereof, and a...
2017/0317227 METHOD OF REDUCING SODIUM CONCENTRATION IN A TRANSPARENT CONDUCTIVE OXIDE LAYER OF A SEMICONDUCTOR DEVICE
A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than...
2017/0317226 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
The performances of a semiconductor device are improved. A method for manufacturing a semiconductor device includes the steps of: providing a semiconductor...
2017/0317225 SYSTEM AND METHOD FOR ALL WRAP AROUND POROUS SILICON FORMATION
Methods and systems for all wrap around porous silicon formation are provided herein. In some embodiments, a substrate holder used for all wrap around porous...
2017/0317224 SOLAR CELL AND METHOD FOR PRODUCING SAME
A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic...
2017/0317223 CERAMIC CARRIER BODY HAVING SOLAR CELLS
The invention relates to a carrier body (1) for solar cells (2). According to the invention, in order to significantly improve the thermal resistivity of the...
2017/0317222 SOLAR CELL MODULE
Disclosed is a solar cell module including an n-type crystalline silicon-based solar cell element as a power generation element, in which at least one surface...
2017/0317221 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
There is to provide a semiconductor device including a light receiving element capable of reducing the manufacturing cost and improving the optical performance...
2017/0317220 GRAPHENE-BASED BOLOMETER
A bolometer. In one embodiment a graphene sheet is configured to absorb electromagnetic waves. The graphene sheet has two contacts connected to an amplifier,...
2017/0317219 SYSTEMS AND METHODS FOR CMOS-INTEGRATED JUNCTION FIELD EFFECT TRANSISTORS FOR DENSE AND LOW-NOISE BIOELECTRONIC...
A complementary metal oxide semiconductor (CMOS)-integrated junction field effect transistor (JFET) has reduced scale and reduced noise. An exemplary JFET has...
2017/0317218 TRANSISTOR AND FABRICATION METHOD THEREOF
A method for fabricating a transistor is provided. The method includes providing a semiconductor substrate; and forming at least a nanowire suspending in the...
2017/0317217 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Provided is a semiconductor device which has a double-gate structure with a channel layer made of an oxide semiconductor and is capable of inhibiting the...
2017/0317216 TRANSISTOR PANEL HAVING A GOOD INSULATION PROPERTY AND A MANUFACTURING METHOD THEREOF
A transistor panel includes a channel region including an oxide of a first metal, a source region and a drain region, each including the first metal, wherein...
2017/0317215 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further,...
2017/0317214 SEMICONDUCTOR DEVICE
A semiconductor device is provided. The semiconductor device includes a drain region and a source region spaced apart from each other, a semiconductor pattern...
2017/0317213 SEMICONDUCTOR DEVICES
A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure directly on a sidewall of the gate...
2017/0317212 FIN FIELD EFFECT TRANSISTOR (FinFET) HAVING AIR GAP AND METHOD OF FABRICATING THE SAME
A method of fabricating a fin field effect transistor (FinFET) is provided as follows. A fin structure is formed on a substrate. A gate pattern and a...
2017/0317211 VERTICAL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
A method of fabricating a vertical field effect transistor is provided as follows. A fin structure having a sidewall is formed on a substrate. A lower spacer,...
2017/0317210 VERTICAL FET STRUCTURE
Techniques relate to forming a vertical field effect transistor (FET). One or more fins are formed on a bottom source or drain of a substrate, and one or more...
2017/0317209 SEMICONDUCTOR DEVICE AND METHOD
The present disclosure provides a semiconductor device including a substrate, a first well and a second well formed in the substrate, the first well being...
2017/0317208 HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A high-voltage semiconductor device is provided. The device includes a semiconductor substrate having a first conductivity type, and a first doping region...
2017/0317207 TRENCH MOSFET STRUCTURE AND LAYOUT WITH SEPARATED SHIELDED GATE
A trench MOSFET with closed cell layout having shielded gate is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell and the...
2017/0317206 Thin-Sheet FinFET Device
Various methods for fabricating non-planar integrated circuit devices, such as FinFET devices, are disclosed herein. An exemplary method includes forming a rib...
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