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Patent # Description
2017/0323922 METAL OXIDE INTERFACE PASSIVATION FOR PHOTON COUNTING DEVICES
Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging...
2017/0323921 SOLID-STATE IMAGE PICKUP DEVICE
A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is...
2017/0323920 HETEROGENEOUS INTEGRATION USING WAFER-TO-WAFER STACKING WITH DIE SIZE ADJUSTMENT
A method is provided for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second...
2017/0323919 HETEROGENEOUS INTEGRATION USING WAFER-TO-WAFER STACKING WITH DIE SIZE ADJUSTMENT
A method is provided for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second...
2017/0323918 SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a...
2017/0323917 SEMICONDUCTOR APPARATUS, SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP APPARATUS, AND ELECTRONIC APPARATUS
The present technology relates to a semiconductor apparatus, a solid-state image pickup device, an image pickup apparatus, and an electronic apparatus capable...
2017/0323916 Buried Channel Deeply Depleted Channel Transistor
Semiconductor devices and methods of fabricating such devices are provided. The devices include source and drain regions on one conductivity type separated by...
2017/0323915 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR MODULE, AND ELECTRONIC DEVICE
The present technology relates to a semiconductor device and a method of manufacturing the same, a semiconductor module, and an electronic device capable of...
2017/0323914 IMAGE SENSORS AND METHODS OF FORMING THE SAME
An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the...
2017/0323913 SELF-ALIGNED BACK SIDE DEEP TRENCH ISOLATION STRUCTURE
A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region...
2017/0323912 Image Sensor Pixel With Memory Node Having Buried Channel And Diode Portions Formed On N-Type Substrate
A global shutter image sensor formed on an n-type bulk substrate and including pixels having pinned n-type photodiodes and memory nodes formed in designated...
2017/0323911 LIGHT ABSORPTION APPARATUS
A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light...
2017/0323910 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device and method of manufacture includes a substrate; a transistor disposed on the substrate to include a gate electrode, a semiconductor layer, a...
2017/0323909 DISPLAY DEVICE
With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased....
2017/0323908 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
In a transistor including an oxide semiconductor film, field-effect mobility and reliability are improved. A semiconductor device includes a gate electrode, an...
2017/0323907 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device (100A) includes: a thin film transistor (101) including a gate electrode (3), an oxide semiconductor layer (5), a gate insulating layer...
2017/0323906 DISPLAY DEVICE
The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The invention provides a display device including a substrate having a display...
2017/0323905 THIN FILM TRANSISTOR ARRAY PANEL
A thin film transistor array panel includes: a substrate; a semiconductor layer disposed on the substrate; a gate electrode disposed on the semiconductor...
2017/0323904 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a...
2017/0323903 AN ARRAY SUBSTRATE, ITS MANUFACTURING METHOD THEREOF AND A LIQUID CRYSTAL DISPLAY PANEL
A manufacturing method of an array substrate is provided in this invention, a protective layer for the channel is formed by magnetron sputtering and thermal...
2017/0323902 METHOD, APPARATUS, AND SYSTEM FOR IMPROVED CELL DESIGN HAVING UNIDIRECTIONAL METAL LAYOUT ARCHITECTURE
At least one method, apparatus and system disclosed involves circuit layout for comprising a unidirectional metal layout. A first trench silicide (TS)...
2017/0323901 Semiconductor Devices and Methods for Forming the Same
A semiconductor device may include a cell gate conductive pattern in a cell array area that extends to a step area, a cell vertical structure in the cell array...
2017/0323900 VERTICAL MEMORY DEVICES
A vertical memory device includes a lower circuit pattern on a substrate, a plurality of gate electrodes spaced apart from another in a first direction...
2017/0323899 3D SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer;...
2017/0323898 SEMICONDUCTOR MEMORY DEVICE INCLUDING 3-DIMENSIONAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor memory device includes a substrate defined with cell regions and a contact region between the cell regions; a dielectric structure formed over...
2017/0323897 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate having a memory array region and a peripheral region, isolation layers formed in the peripheral region to define an...
2017/0323896 MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
A memory structure and a manufacturing method for the same are disclosed. The memory structure comprises memory segments. Each of the memory segments comprises...
2017/0323895 ONE-TIME PROGRAMMING CELL
A one-time programing cell includes a first metal oxide semiconductor (MOS) structure and a second transistor having a common gate electrode electrically...
2017/0323894 LAYOUT PATTERN FOR STATIC RANDOM ACCESS MEMORY
A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a...
2017/0323893 SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The...
2017/0323892 MEMORY DEVICE
A memory device which stores a large amount of data is provided. The memory device includes a first transistor, a second transistor, a third transistor, a...
2017/0323891 Thyristor Volatile Random Access Memory and Methods of Manufacture
A volatile memory array using vertical thyristors is disclosed together with methods of fabricating the array.
2017/0323890 SEMICONDUCTOR DEVICE
A semiconductor device aims to prevent a leak current from flowing between a well and a corner of an active region formed on an upper surface of another well...
2017/0323889 SEMICONDUCTOR INTEGRATED CIRCUITS HAVING CONTACTS SPACED APART FROM ACTIVE REGIONS
First and second active regions are doped with different types of impurities, and extend in a first direction and spaced apart from each other in a second...
2017/0323888 FINFET AND FABRICATION METHOD THEREOF
A method is provided for fabricating a FinFET. The method includes providing a substrate including an NMOS region; forming a plurality of fins on the...
2017/0323887 SEMICONDUCTOR INTEGRATED CIRCUIT AND LOGIC CIRCUIT
Disclosed herein is a driver circuit including first and second n-channel transistors connected together in series between first and second nodes. The first...
2017/0323886 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device includes forming first gate structure and a second gate structure over a core device region of a substrate. The...
2017/0323885 HIGH QUALITY VARACTOR
Various examples are provided for varactors (variable capacitors). Described are both simple and complex forms of variable capacitors and improvements thereof....
2017/0323884 MONOLITHICALLY INTEGRATED SEMICONDUCTOR SWITCH, PARTICULARLY CIRCUIT BREAKER
A monolithically integrated semiconductor switch, particularly a circuit breaker, has regenerative turn-off behaviour. The semiconductor switch has two...
2017/0323883 DUAL-SIDED SILICON INTEGRATED PASSIVE DEVICES
In some embodiments, a system may include an integrated circuit. The integrated circuit may include a substrate including a first surface, a second surface...
2017/0323882 Poly Silicon Based Interface Protection
A semiconductor device includes an active device of a transistor disposed in a semiconductor substrate. An isolation layer is disposed at the semiconductor...
2017/0323881 Switch Having First and Second Switching Elements Connected in Parallel with One Another
A switch includes an input terminal and an output terminal. The switch also includes a first stack having transistors coupled in series, and a second stack...
2017/0323880 Semiconductor Device for Electrostatic Discharge Protection
A semiconductor device for electrostatic discharge (ESD) protection includes a doped well, a drain region, a source region, a first doped region and a guard...
2017/0323879 BUS DRIVER / LINE DRIVER
A bus driver is provided that can withstand over voltages being applied to its output terminal without the protection circuit detracting from the voltage swing...
2017/0323878 SEMICONDUCTOR DEVICE
A semiconductor device includes a power element and a heat sensing element configured to detect a temperature of the power element. The power element includes...
2017/0323877 INTEGRATED CIRCUIT AND METHOD OF FABRICATING THE SAME
A layout includes a plurality of cells and at least one dummy gate electrode continuously extends across the cells. Since the dummy gate electrode is...
2017/0323876 PACKAGING OF HIGH PERFORMANCE SYSTEM TOPOLOGY FOR NAND MEMORY SYSTEMS
A topology for memory circuits of a non-volatile memory system reduces capacitive loading. For a given channel, a single memory chip can be connected to the...
2017/0323875 PACKAGING OF HIGH PERFORMANCE SYSTEM TOPOLOGY FOR NAND MEMORY SYSTEMS
A topology for memory circuits of a non-volatile memory system reduces capacitive loading. For a given channel, a single memory chip can be connected to the...
2017/0323874 INTEGRATED CIRCUIT ASSEMBLY THAT INCLUDES STACKED DICE
An integrated circuit assembly that includes a substrate; a member formed on the substrate; a first die mounted to the substrate within an opening in the...
2017/0323873 LIGHT EMITTING DEVICE
A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a...
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