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Patent # Description
2017/0323821 ROBOT SUBASSEMBLIES, END EFFECTOR ASSEMBLIES, AND METHODS WITH REDUCED CRACKING
A robot subassembly including roll, pitch, and/or vertical orientation adjustability capability of a ceramic or glass end effector. The robot subassembly...
2017/0323820 Surface Protective Sheet
A surface protective sheet is used when grinding the rear surface of a semiconductor wafer having a circuit formed on the front surface, and is provided with:...
2017/0323819 ELECTROSTATIC CHUCKING DEVICE
Provided is an electrostatic chucking device having high heat resistance. The electrostatic chucking device of the present invention includes a first ceramic...
2017/0323818 ROTATING AND HOLDING APPARATUS FOR SEMICONDUCTOR SUBSTRATE AND CONVEYING APPARATUS OF ROTATING AND HOLDING...
A holding apparatus for a semiconductor substrate and a conveying apparatus for a semiconductor substrate. A susceptor is fixed to a rotational driving shaft to be...
2017/0323817 TRANSPORT DEVICE
A transport device is capable of reliably determining a presence or absence of a lid provided on a container and/or determining detachment of the lid, with a...
2017/0323816 SUBSTRATE PROCESSING APPARATUS AND ARTICLE MANUFACTURING METHOD
A substrate processing apparatus including a plurality of processing devices each of which processes a substrate is provided. The apparatus comprises a...
2017/0323815 SUBSTRATE HOLDING DEVICE, SUBSTRATE TRANSPORT DEVICE, PROCESSING ARRANGEMENT AND METHOD FOR PROCESSING A SUBSTRATE
In accordance with various embodiments, provision is made of a substrate holding device, wherein the latter may comprise a carrier plate with a recess, the...
2017/0323814 WAFER LOADING APPARATUS OF WAFER POLISHING EQUIPMENT AND METHOD FOR ADJUSTING WAFER LOADING POSITION
An embodiment relates to a wafer loading apparatus of wafer polishing equipment. Provided is the wafer loading apparatus of wafer polishing equipment,...
2017/0323813 ADVANCED TEMPERATURE CONTROL FOR WAFER CARRIER IN PLASMA PROCESSING CHAMBER
An advanced temperature control system and method are described for a wafer carrier in a plasma processing chamber. In one example a heat exchanger provides a...
2017/0323812 Decapsulation System
A decapsulation apparatus has an etch plate, an off-center etch head having an opening, a cover sealing to the etch plate forming an etching chamber, a gasket...
2017/0323811 SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD
Provided is a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor disposed in the chamber...
2017/0323810 SINGLE USE RINSE IN A LINEAR MARANGONI DRIER
An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing...
2017/0323809 SUBSTRATE WASHING DEVICE
A substrate washing device includes a substrate holding mechanism 70 that holds a substrate W, a substrate rotating mechanism 72 that rotates the substrate W...
2017/0323808 APPARATUS FOR MANUFACTURE OF AT LEAST TWO SOLAR CELL ARRANGEMENTS, SYSTEM FOR MANUFACTURE OF AT LEAST TWO...
The present disclosure provides a support device for conveying at least one solar cell element in a transport direction, wherein the support device comprises a...
2017/0323807 SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD
Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a...
2017/0323806 WAFER PROFILING FOR ETCHING SYSTEM
A substrate etching system includes a support to hold a wafer in a face-up orientation, a dispenser arm movable laterally across the wafer on the support, the...
2017/0323805 FILM, METHOD FOR ITS PRODUCTION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT USING THE FILM
To provide a film which is excellent in releasing property with respect to a resin sealed portion and excellent in low migration property and peeling property...
2017/0323804 MICROELECTRONICS PACKAGE WITH INDUCTIVE ELEMENT AND MAGNETICALLY ENHANCED MOLD COMPOUND COMPONENT
The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for...
2017/0323803 METHODS OF ENCAPSULATION
Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300.degree. C. are...
2017/0323802 SEMICONDUCTOR DIE ASSEMBLIES WITH HEAT SINK AND ASSOCIATED SYSTEMS AND METHODS
Semiconductor die assemblies with heat sinks are disclosed herein. In one embodiment, a semiconductor die assembly includes a stack of semiconductor dies and a...
2017/0323801 METHOD OF GENERATING A POWER SEMICONDUCTOR MODULE
The present application relates to a method of generating a power semiconductor module including a carrier layer and a substrate having a terminal connection...
2017/0323800 POWER MOSFET
A power MOSFET includes a substrate, a dielectric layer, solder balls, first and second patterned-metal layers. The substrate includes an active surface, a...
2017/0323799 LEADFRAME AND THE METHOD TO FABRICATE THEREOF
The present invention discloses a leadframe in which two conductive pillars with a high aspect ratio and the corresponding two leads of the leadframe form a 3D...
2017/0323798 METHODS OF MANUFACTURING VERTICAL MEMORY DEVICES
A method of manufacturing a vertical memory device includes forming a preliminary first mold structure on a substrate, which includes main and edge regions,...
2017/0323797 ETCHING METHOD FOR SIC SUBSTRATE AND HOLDING CONTAINER
Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present...
2017/0323796 METHOD FOR ETCHING SILICON LAYER AND PLASMA PROCESSING APPARATUS
Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the...
2017/0323795 METHOD OF SELECTIVE ETCHING ON EPITAXIAL FILM ON SOURCE/DRAIN AREA OF TRANSISTOR
Methods for forming transistors are provided. A substrate is placed in a processing chamber, and a plurality of epitaxial features is formed on the substrate....
2017/0323794 BOTTOM SOURCE/DRAIN SILICIDATION FOR VERTICAL FIELD-EFFECT TRANSISTOR (FET)
A method for manufacturing a semiconductor device includes forming a first active region on a semiconductor substrate, forming a semiconductor layer on the...
2017/0323793 FABRICATION METHOD OF FAST RECOVERY DIODE
This invention involves a fabrication method of fast recovery diode, which includes following steps: growing a sacrificial oxide layer on a surface of an N-...
2017/0323792 SiC SUBSTRATE TREATMENT METHOD
Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing...
2017/0323791 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RESIST GLASS
In a method of manufacturing a semiconductor device having an oxide film removing step where an oxide film formed on a surface of a semiconductor substrate is...
2017/0323790 WAFER BOW REDUCTION
We describe a method for reducing bow in a composite wafer comprising a silicon wafer and a silicon carbide layer grown on the silicon wafer. The method...
2017/0323789 METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.
2017/0323788 METAL BASED NANOWIRE TUNNEL JUNCTIONS
Semiconductor light emitting diodes (LEDs) formed as (Al)GaN-based nanowire structures have a first semiconductor layer, a second semiconductor layer, and a...
2017/0323787 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a...
2017/0323786 GAPFILL OF VARIABLE ASPECT RATIO FEATURES WITH A COMPOSITE PEALD AND PECVD METHOD
Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for...
2017/0323785 METHOD TO DEPOSIT CONFORMAL AND LOW WET ETCH RATE ENCAPSULATION LAYER USING PECVD
Methods of depositing conformal, dense silicon-containing films having low hydrogen content are provided herein. Methods involve pulsing a plasma while...
2017/0323784 METHOD FOR DEPOSITING A PLANARIZATION LAYER USING POLYMERIZATION CHEMICAL VAPOR DEPOSITION
A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to...
2017/0323783 SHORT INORGANIC TRISILYLAMINE-BASED POLYSILAZANES FOR THIN FILM DEPOSITION
Disclosed are Si--C free and volatile silazane precursors for high purity thin film deposition.
2017/0323782 FORMATION OF SiOC THIN FILMS
Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma...
2017/0323781 Selective Deposition Through Formation Of Self-Assembled Monolayers
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net...
2017/0323780 THERMALLY CONDUCTIVE SHEET AND ELECTRONIC APPARATUS
A thermally conductive sheet includes: a first graphite sheet; a second graphite sheet that is any of a second graphite sheet disposed to entirely overlap the...
2017/0323779 DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a display apparatus is provided as follows. A substrate having a display portion on an upper surface of the substrate is prepared. A...
2017/0323778 PLASMA POISONING TO ENABLE SELECTIVE DEPOSITION
Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state...
2017/0323777 SELECTIVELY LATERAL GROWTH OF SILICON OXIDE THIN FILM
Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of...
2017/0323776 SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In...
2017/0323775 Methods of Depositing SiCON with C, O and N Compositional Control
Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma...
2017/0323774 WAFER PROCESSING APPARATUS
Disclosed herein is a laser processing apparatus including a condenser having a function of spherical aberration. Since the condenser has a function of...
2017/0323773 MASS SPECTROMETER
A high-voltage power source for applying high voltage to a nozzle of an ESI ion source includes a charge release assistant section (26) including switch...
2017/0323772 PROTECTIVE METAL OXY-FLUORIDE COATINGS
An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has...
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