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Patent # Description
2017/0330769 PRECLEANING CHAMBER AND PLASMA PROCESSING APPARATUS
A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21') disposed at the top of the...
2017/0330768 MOLDED PACKAGE AND METHOD OF MANUFACTURE
A package is manufactured by placing a substrate (10), for example a lead frame, in a mold (30) with a protection flange (38) extending into a notch (14) in...
2017/0330767 INTERPOSER, SEMICONDUCTOR PACKAGE, AND METHOD OF FABRICATING INTERPOSER
A method of fabricating an interposer includes: providing a carrier substrate; forming a unit redistribution layer on the carrier substrate, the unit...
2017/0330766 ELECTRONIC DEVICE, ELECTRONIC APPARATUS, MOVING OBJECT, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
An electronic device includes: an electronic component including an external connection terminal; and a lead frame (metal member) connected to the external...
2017/0330765 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A method is provided for fabricating a semiconductor structure. The method includes forming a base substrate including a substrate and a stress layer formed in...
2017/0330764 METHODS AND APPARATUSES FOR CONTROLLING TRANSITIONS BETWEEN CONTINUOUS WAVE AND PULSING PLASMAS
Provided are methods and apparatuses for smoothly transitioning from a first plasma condition to a second plasma condition in a plasma processing chamber. An...
2017/0330763 SEMICONDUCTOR TREATMENT COMPOSITION AND TREATMENT METHOD
A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3.times.10.sup.1 to 1.5.times.10.sup.3...
2017/0330762 SEMICONDUCTOR TREATMENT COMPOSITION AND TREATMENT METHOD
A semiconductor treatment composition includes potassium and sodium, and has a potassium content M.sub.K (ppm) and a sodium content M.sub.Na (ppm) that satisfy...
2017/0330761 METHOD AND STRUCTURE TO CONTACT TIGHT PITCH CONDUCTIVE LAYERS WITH GUIDED VIAS USING ALTERNATING HARDMASKS AND...
Interconnect structures having alternating dielectric caps and an etchstop liner for semiconductor devices and methods for manufacturing such devices are...
2017/0330760 Method for Manufacturing Pillar or Hole Structures in a Layer of a Semiconductor Device, and Associated...
The present disclosure relates to a method for manufacturing pillar or hole structures in a layer of semiconductor device, and associated semiconductor...
2017/0330759 ETCHING METHOD
An etching method includes a cooling process of controlling a temperature of a processing target object provided within a processing vessel to -20.degree. C....
2017/0330758 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A method is provided for fabricating a semiconductor structure. The method includes providing a substrate including a first region for forming a first...
2017/0330757 METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP
A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous...
2017/0330756 METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing...
2017/0330755 FIN PATTERNS WITH VARYING SPACING WITHOUT FIN CUT
Methods of forming semiconductor fins include forming first spacers on a first sidewall of each of a plurality of mandrels using an angled deposition process....
2017/0330754 FIN PATTERNS WITH VARYING SPACING WITHOUT FIN CUT
Methods of forming semiconductor fins include forming first spacers on a first sidewall of each of a plurality of mandrels using an angled deposition process....
2017/0330753 FIN PATTERNS WITH VARYING SPACING WITHOUT FIN CUT
Methods of forming semiconductor fins include forming first spacers on a first sidewall of each of a plurality of mandrels using an angled deposition process....
2017/0330752 METHOD OF MANUFACTURING MEMORY DEVICE
Provided herein is a method of manufacturing a memory device. The method of manufacturing the memory device includes: forming a compensation layer over the...
2017/0330751 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another...
2017/0330750 UTILIZATION OF ANGLED TRENCH FOR EFFECTIVE ASPECT RATIO TRAPPING OF DEFECTS IN STRAIN-RELAXED HETEROEPITAXY OF...
Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with...
2017/0330749 FREE-STANDING SUBSTRATE, FUNCTION ELEMENT AND METHOD FOR PRODUCING SAME
A self-supporting substrate includes a first nitride layer grown by hydride vapor deposition method or ammonothermal method and comprising a nitride of one or...
2017/0330748 CHEMICAL VAPOR DEPOSITION METHOD FOR FABRICATING TWO-DIMENSIONAL MATERIALS
A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe.sub.2 and MoSe.sub.2, is based on a chemical vapor deposition approach that...
2017/0330747 COMPOSITE SUBSTRATE MANUFACTURING METHOD AND COMPOSITE SUBSTRATE
To provide a composite substrate whereby a nanocarbon film having no defect can be manufactured at low cost. A method for manufacturing a composite substrate,...
2017/0330746 PHOSPHORUS INCORPORATION FOR N-TYPE DOPING OF DIAMOND WITH (100) AND RELATED SURFACE ORIENTATION
Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a...
2017/0330745 APPARATUS FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE...
An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group...
2017/0330744 Systems and Methods for Using Electrical Asymmetry Effect to Control Plasma Process Space in Semiconductor...
Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple...
2017/0330743 DIELECTRIC BARRIER LAYER
The present invention relates to a method of forming a fluorine-doped metal oxide dielectric layer suitable for forming a dielectric barrier layer in an...
2017/0330742 METHOD OF FORMING SEMICONDUCTOR DEVICE
A semiconductor device and a method of forming the same, the semiconductor device includes fin shaped structures and a recessed insulating layer. The fin...
2017/0330741 SYSTEM FOR INTEGRATING PRECEDING STEPS AND SUBSEQUENT STEPS
A semiconductor manufacturing system has a series of steps, from manufacturing of a semiconductor on a wafer until packaging, that can be easily linked. A...
2017/0330740 METHOD FOR ENHANCING ELECTROSPRAY
Provided herein, among other things, is a method of ionizing a first stream of liquid by an electrospray ion source having a nebulizer, wherein the first...
2017/0330738 ION BEAM MATERIALS PROCESSING SYSTEM WITH GRID SHORT CLEARING SYSTEM FOR GRIDDED ION BEAM SOURCE
Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems...
2017/0330737 Treating Arcs in a Plasma Process
An arc treatment device includes an arc detector operable to detect whether an arc is present in a plasma chamber, an arc energy determiner operable to...
2017/0330736 A Device Having Two End Blocks, an Assembly and a Sputter System Comprising Same, and a Method of Providing RF...
A device for use in a sputter system, comprising at least a first end block and a second end block positioned at opposite sides of the sputter system. The...
2017/0330735 Confinement Ring for Use in a Plasma Processing System
An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a...
2017/0330734 PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes a process chamber providing a space for plasma processing, a lower electrode that is in the process chamber, a surface...
2017/0330733 SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least...
2017/0330732 ADJUSTMENT OF POWER AND FREQUENCY BASED ON THREE OR MORE STATES
Systems and methods for adjusting power and frequency based on three or more states are described. One of the methods includes receiving a pulsed signal having...
2017/0330731 SYSTEM AND METHOD FOR CONTROL OF HIGH EFFICIENCY GENERATOR SOURCE IMPEDANCE
Systems and methods for adjusting the source impedance of a generator are disclosed. An exemplary method includes generating a first signal and applying the...
2017/0330730 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing apparatus includes a processing chamber, a carrier wave group generation unit and a plasma generation unit. The carrier wave group...
2017/0330729 SWITCHING CIRCUIT
In one embodiment, a switching circuit includes a first switch coupled to a first switch terminal, the first switch comprising at least one gallium nitride...
2017/0330728 ADJUSTABLE SIDE GAS PLENUM FOR EDGE RATE CONTROL IN A DOWNSTREAM REACTOR
A side tuning ring for a gas distribution device of a substrate processing system includes a first ring adjacent to a faceplate of the gas distribution device....
2017/0330727 ANTENNA, MICROWAVE PLASMA SOURCE INCLUDING THE SAME, PLASMA PROCESSING APPARATUS, AND METHOD OF MANUFACTURING...
Embodiments of the inventive concepts provide an antenna, a microwave plasma source including the antenna, a plasma processing apparatus including the antenna,...
2017/0330726 Fluorinated compositions for ion source performance improvements in nitrogen ion implantation
Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen...
2017/0330725 LANTHANATED TUNGSTEN ION SOURCE AND BEAMLINE COMPONENTS
An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed...
2017/0330724 CHARGED PARTICLE BEAM DEVICE
An electronic microscope has a great depth of focus compared with an optical microscope. Thus, information is superimposed in the depth direction in one image....
2017/0330723 Electron Microscope and Method of Controlling Same
There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope (100) includes: an electron source (110)...
2017/0330722 COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREOF
The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a...
2017/0330721 MAGNETRON AND METHOD OF ADJUSTING RESONANCE FREQUENCY OF MAGNETRON
Provided are a magnetron whose resonance frequency is easily adjusted and a method of adjusting a resonance frequency of the magnetron. A magnetron includes an...
2017/0330720 HIGH VOLTAGE ELECTRICAL DISCONNECT DEVICE WITH MAGNETIC ARC DEFLECTION ASSEMBLY
A compact disconnect device includes a magnetic arc deflection assembly including at least one set of stacked arc plates and at least one magnet disposed...
2017/0330719 DEVICE FOR PROTECTION AGAINST TRANSITORY OVERVOLTAGES
The invention concerns a device for protection against transitory overvoltages, comprising: a varistor; a discharge tube; a thermofusible soldering securing a...
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