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Patent # Description
2017/0338146 Method for Patterning Interconnects
Various patterning methods involved with manufacturing semiconductor devices are disclosed herein. A method for fabricating a semiconductor structure (for...
2017/0338145 SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method...
2017/0338144 MOSFETs with Channels on Nothing and Methods for Forming the Same
A method includes performing an epitaxy to grow a semiconductor layer, which includes a top portion over a semiconductor region. The semiconductor region is...
2017/0338143 A METHOD OF MANUFACTURING HIGH RESISTIVITY SEMICONDUCTOR-ON-INSULATOR WAFERS WITH CHARGE TRAPPING LAYERS
A method of preparing a single crystal semiconductor handle wafer in the manufacture of a semiconductor-on-insulator device is provided. The single crystal...
2017/0338142 HIGH VOLTAGE CHUCK FOR A PROBE STATION
A chuck for testing an integrated circuit includes an upper conductive layer having a lower surface and an upper surface suitable to support a device under...
2017/0338141 FLEXIBLE BOARD
A flexible board is disclosed. The flexible board comprises a flexible baseplate, a scattering structure that is arranged on at least one surface of the...
2017/0338140 PERMANENT SECONDARY EROSION CONTAINMENT FOR ELECTROSTATIC CHUCK BONDS
A substrate support in a substrate processing system includes a baseplate, a ceramic layer, and a bond layer. The ceramic layer is arranged on the baseplate to...
2017/0338139 AUTOMATIC HANDLING BUFFER FOR BARE STOCKER
A buffer station for automatic material handling system can provide throughput improvement. Further, by storing to-be-accessed workpieces the buffer stations...
2017/0338138 METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE
A method of manufacturing a semiconductor structure includes providing a substrate, disposing a first semiconductive material over the substrate at a first...
2017/0338137 METHODS OF EVALUATING A PROCESS AND METHODS OF CONTROLLING A SUBSTRATE PROCESSING SYSTEM USING THE SAME
A method of evaluating a process of fabricating a semiconductor device includes obtaining measurement values from a plurality of sensors and predetermined...
2017/0338136 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD
A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of...
2017/0338135 THERMAL COUPLED QUARTZ DOME HEAT SINK
Embodiments described herein generally relate to apparatus for processing substrates. The apparatus generally include a process chamber having a substrate...
2017/0338134 SYSTEMS AND METHODS FOR IMPROVED SEMICONDUCTOR ETCHING AND COMPONENT PROTECTION
Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber....
2017/0338133 SYSTEMS AND METHODS FOR IMPROVED SEMICONDUCTOR ETCHING AND COMPONENT PROTECTION
Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber....
2017/0338132 APPARATUS FOR PROCESSING SUBSTRATE AND METHOD OF CLEANING SAME
Provided is an apparatus for processing a substrate including a spin head on which a substrate is placed, a container provided to surround the spin head, an...
2017/0338131 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The substrate processing apparatus includes a substrate holding unit that holds a substrate horizontally, a substrate rotating unit that rotates the substrate...
2017/0338130 ION IMPLANTER COMPRISING INTEGRATED VENTILATION SYSTEM
An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box...
2017/0338129 Semiconductor Device and Method of Making Embedded Wafer Level Chip Scale Packages
A semiconductor device includes a carrier and a plurality of semiconductor die disposed over the carrier. An encapsulant is deposited over the semiconductor...
2017/0338128 MANUFACTURING METHOD OF PACKAGE STRUCTURE
A manufacturing method of a package structure is provided. The method includes the following steps. A redistribution circuit layer is formed on a first...
2017/0338127 Methods for Forming Ceramic Substrates with Via Studs
This document describes the fabrication and use of multilayer ceramic substrates, having one or more levels of internal thick film metal conductor patterns,...
2017/0338126 SYSTEMS AND METHODS FOR FABRICATING A POLYCRYSTALINE SEMICONDUCTOR RESISTOR ON A SEMICONDUCTOR SUBSTRATE
In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at...
2017/0338125 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE INCLUDING FIRST AND SECOND THERMAL TREATMENTS
A semiconductor device includes: an SiC substrate having a first surface and a second surface; a first conductivity type SiC layer disposed on the first...
2017/0338124 METHOD FOR PLASMA ETCHING A WORKPIECE
A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step...
2017/0338123 CHEMICAL MECHANICAL POLISHING SLURRY, METHOD FOR CHEMICAL MECHANICAL POLISHING AND MANUFACTURING METHOD OF...
A chemical mechanical polishing (CMP) slurry, a method for CMP, and a manufacturing method of a semiconductor structure are provided. The CMP slurry includes a...
2017/0338122 Methods and Apparatus for Variable Selectivity Atomic Layer Etching
A method of fabricating a microelectronic device, such as a high electron mobility transistors (HEMT), is disclosed. In some examples, the method comprises...
2017/0338121 Method of Forming A Semiconductor Device Including A Pitch Multiplication
Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the...
2017/0338120 OXIDE FILM REMOVING METHOD, OXIDE FILM REMOVING APPARATUS, CONTACT FORMING METHOD, AND CONTACT FORMING SYSTEM
Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide...
2017/0338119 TWO-STEP FLUORINE RADICAL ETCH OF HAFNIUM OXIDE
In one implementation, a method of removing a metal-containing layer is provided. The method comprises generating a plasma from a fluorine-containing gas. The...
2017/0338118 LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD
A laser processing apparatus has a laser beam applying unit for applying a laser beam to a workpiece held on a chuck table. The laser beam applying unit...
2017/0338117 METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER AND VAPOR PHASE GROWTH DEVICE
A vapor deposition apparatus includes an exhaust regulator provided in an exhaust pipe to regulate exhaust of the reaction chamber and including: a hollow...
2017/0338116 Method for Patterning a Substrate Using a Layer with Multiple Materials
Techniques herein enable integrating stack materials and multiple color materials that require no corrosive gases for etching. Techniques enable a multi-line...
2017/0338115 Method for Forming Conductive Lines
Various patterning methods involved with manufacturing semiconductor device structures are disclosed herein. A method for forming a semiconductor device...
2017/0338114 PATTERN FORMING METHOD, GAS CLUSTER ION BEAM IRRADIATING DEVICE AND PATTERN FORMING APPARATUS
A mask pattern is formed on a substrate. A first spacer film is formed on the mask pattern. The first spacer film is etched by irradiating the substrate with a...
2017/0338113 Fabrication Method of Oxide Semiconductor Thin Film and Fabrication Method of Thin Film Transistor
The present invention provides a fabrication method of an oxide semiconductor thin film and a fabrication method of a thin film transistor, belongs to the...
2017/0338112 C-PLANE GaN SUBSTRATE
Provides is a C-plane GaN substrate which, although formed from a GaN crystal grown so that surface pits are generated, is free from any inversion domain, and...
2017/0338111 METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments,...
2017/0338110 Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial growth...
This document describes the fabrication and use of ceramic stabilizing layer fabricated right on the product silicon wafer to facilitate its use as a substrate...
2017/0338109 COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILMS
Described herein are compositions and methods using same for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon...
2017/0338108 SEMICONDUCTOR DEVICE OR DISPLAY DEVICE INCLUDING THE SAME
To provide a novel method for manufacturing a semiconductor device. To provide a method for manufacturing a highly reliable semiconductor device at relatively...
2017/0338107 SEMICONDUCTOR DEVICE OR DISPLAY DEVICE INCLUDING THE SAME
A method for manufacturing a novel semiconductor device is provided. The method includes a first step of forming a first oxide semiconductor film over a...
2017/0338106 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a...
2017/0338104 FORMULATIONS FOR THE REMOVAL OF PARTICLES GENERATED BY CERIUM-CONTAINING SOLUTIONS
Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device...
2017/0338103 Method for Integrated Circuit Patterning
A method includes patterning a resist layer formed over a substrate, resulting in a resist pattern; and transferring the resist pattern to an anti-reflection...
2017/0338102 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying...
2017/0338101 GROUP III NITRIDE SEMICONDUCTOR, AND METHOD FOR PRODUCING SAME
On an RAMO.sub.4 substrate containing a single crystal represented by the general formula RAMO.sub.4 (wherein R represents one or a plurality of trivalent...
2017/0338100 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
In accordance with the following step of a method of manufacturing a MOSFET, a first cutting step of cutting a silicon carbide wafer along a plane...
2017/0338099 FILM DEPOSITION METHOD
A method performed by a film deposition apparatus includes supplying a first reaction gas, which is adsorbable to hydroxyl groups, to a surface of a substrate...
2017/0338098 MANUFACTURING METHOD OF MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE SILICON
A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible...
2017/0338097 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a...
2017/0338096 COAXIAL CABLE-TYPE PLASMA LAMP DEVICE
The present invention relates to a coaxial cable-type plasma lamp device, which has, in a coaxial cable form, a conductor formed in a concentric line inside a...
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