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Patent # Description
2017/0352708 ORGANIC ELECTROLUMINESCENT DISPLAY PANEL
An organic EL display panel including: a substrate; pixel electrodes that are arrayed in a matrix above the substrate; first organic functional layers that are...
2017/0352707 DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
A display panel including first and second sub pixel electrodes, a first light emitting unit, first and second charge generation layers, a second light...
2017/0352706 DISPLAY APPARATUS AND METHOD OF FABRICATING THE SAME
A display apparatus including a substrate, a display portion disposed on an active area defined at the substrate, a buffer layer disposed on the active area...
2017/0352705 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A memory device according to one embodiment includes a resistance change film, an insulating film provided on the resistance change film, a first wiring...
2017/0352704 CELL PILLAR STRUCTURES AND INTEGRATED FLOWS
Various embodiments comprise apparatuses and methods, such as a memory stack having a continuous cell pillar. In various embodiments, the apparatus includes a...
2017/0352703 METHOD FOR FABRICATING AN ARRAY OF DIODES, IN PARTICULAR FOR A NON-VOLATILE MEMORY, AND CORRESPONDING DEVICE
The array of diodes comprises a matrix plane of diodes arranged according to columns in a first direction and according to rows in a second direction...
2017/0352702 BOTTOM PINNED SOT-MRAM BIT STRUCTURE AND METHOD OF FABRICATION
Embodiments of the present disclosure generally relate to data storage and computer memory systems, and more particularly, to a SOT-MRAM chip architecture. The...
2017/0352701 Magnetic Random Access Memory with Multilayered Seed Structure
The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that...
2017/0352700 Display Device and Method for Producing a Display Device
A display device with a semiconductor layer sequence includes an active region provided for generating radiation and a plurality of pixels. The display device...
2017/0352699 PREPARATION METHOD FOR HIGH-VOLTAGE LED DEVICE INTEGRATED WITH PATTERN ARRAY
The invention disclosed a preparation method for a high-voltage LED device integrated with a pattern array, comprising the following process steps: providing a...
2017/0352698 IMAGE SENSOR CHIP SCALE PACKAGES AND RELATED METHODS
Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity...
2017/0352697 IMAGING SENSOR, IMAGING SYSTEM, AND MOVING BODY
Respective first signal holding units of a plurality of sets are commonly connected to an input node of an amplification unit of one set via a second transfer...
2017/0352696 CHARGE PACKET SIGNAL PROCESSING USING PINNED PHOTODIODE DEVICES
An image sensor may include an array of image pixels coupled to analog-to-digital conversion circuitry formed from pinned photodiode charge transfer circuits....
2017/0352695 IMAGE ACQUISITION DEVICE, BIO-INFORMATION ACQUISITION DEVICE, AND ELECTRONIC APPARATUS
An image acquisition device includes an imager including a light receiver, a light shield, a light condenser, and a light emitter. The light shield includes a...
2017/0352694 CHARGE PACKET SIGNAL PROCESSING USING PINNED PHOTODIODE DEVICES
An image sensor may include an array of image pixels coupled to analog-to-digital conversion circuitry formed from pinned photodiode charge transfer circuits....
2017/0352693 IMAGE-SENSING DEVICE
An image-sensing device includes a semiconductor substrate, a passive layer, and a light-collecting element. The semiconductor substrate includes a...
2017/0352692 DISPLAY APPARATUS
A display apparatus capable of reducing a defect rate during manufacturing and utilizing thereof, the display apparatus includes a substrate comprising a...
2017/0352691 METHOD FOR SELECTIVE THIN FILM DEPOSITION
A method device is prepared with a patterned thin film that can include one or more metal oxides on a suitable substrate. Initially, a pattern of a deposition...
2017/0352690 METAL OXIDE AND FIELD-EFFECT TRANSISTOR
To provide a novel material. In a field-effect transistor including a metal oxide, a channel formation region of the transistor includes a material having at...
2017/0352689 ELEMENT SUBSTRATE AND DISPLAY DEVICE
An element substrate and a display device are provided. The element substrate includes a substrate and an element layer, and the element layer is disposed on...
2017/0352688 Method of Manufacturing Thin Film Transistor, Dehydrogenating Apparatus for Performing the Same, and Organic...
Provided are a method of manufacturing a thin film transistor, a dehydrogenating apparatus for performing the method, and an organic light emitting display...
2017/0352687 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device including: preparing a substrate in which an insulating layer, a semiconductor layer, and an insulating film...
2017/0352686 DISPLAY DEVICE
To provide a display device with excellent display quality, in a display device including a signal line, a scan line, a transistor, a pixel electrode, and a...
2017/0352685 TFT SUBSTRATE INCLUDING ADDITIONAL METAL LAYER FOR REDUCING ELECTRICAL RESISTANCE AND MANUFACTURING METHOD THEREOF
A TFT substrate and a manufacturing method thereof are provided. The TFT substrate includes a plurality of vias formed in a second insulation layer that is...
2017/0352684 SEMICONDUCTOR DEVICE
A semiconductor device includes an insulating layer on a substrate, a first channel pattern on the insulating layer and contacting the insulating layer, second...
2017/0352683 SEMICONDUCTOR DEVICE WITH HIGH INTEGRATION
The present disclosure may provide a semiconductor device having a stable structure and a low manufacturing degree of the difficulty. The device may include...
2017/0352682 SEMICONDUCTOR DEVICE WITH HIGH INTEGRATION
The present disclosure may provide a semiconductor device having a stable structure and a low manufacturing degree of the difficulty. The device may include...
2017/0352681 Integrated Structures Comprising Charge-Storage Regions Along Outer Portions of Vertically-Extending Channel...
Some embodiments include an integrated structure having stacked conductive levels. At least some of the conductive levels are wordline levels and include...
2017/0352680 MEMORY DEVICE
In one embodiment, the semiconductor device includes a substrate having an impurity region, and the substrate and the impurity region have a different impurity...
2017/0352679 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
A 3D semiconductor device is provided, including several memory layers vertically stacked on a substrate, an upper selection layer formed on the memory layers,...
2017/0352678 THROUGH-MEMORY-LEVEL VIA STRUCTURES BETWEEN STAIRCASE REGIONS IN A THREE-DIMENSIONAL MEMORY DEVICE AND METHOD...
Lower level metal interconnect structures are formed over a substrate with semiconductor devices thereupon. A semiconductor material layer and an alternating...
2017/0352677 Memory Circuitry Comprising A Vertical String Of Memory Cells And A Conductive Via And Method Used In Forming A...
A method used in forming a vertical string of memory cells and a conductive via comprises forming a first lower opening and a second lower opening into a lower...
2017/0352676 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An improvement is achieved in the performance of a semiconductor device having a nonvolatile memory. A first memory cell includes a first control gate...
2017/0352675 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
To improve reliability of a semiconductor device, a control transistor and a memory transistor formed in a memory cell region are configured to have a...
2017/0352674 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES
A three-dimensional semiconductor device includes an electrode structure on a substrate that includes a first region and a second region, the electrode...
2017/0352673 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a second channel layer in a first column and a second channel layer in a second column disposed biased to one side of a first...
2017/0352672 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device according to an embodiment includes first and second semiconductor pillars extending in a first direction and being arranged...
2017/0352671 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a...
2017/0352670 READ-ONLY MEMORY (ROM) DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A read-only memory (ROM) structure is provided. The ROM device structure includes an active region formed over a substrate and a first group of word lines...
2017/0352669 THREE-DIMENSIONAL MEMORY DEVICE HAVING MULTILAYER WORD LINES CONTAINING SELECTIVELY GROWN COBALT OR RUTHENIUM...
A memory stack structure including a memory film and a vertical semiconductor channel can be formed within each memory opening that extends through a stack...
2017/0352668 METHOD AND DEVICE FOR FINFET SRAM
A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, an interlayer dielectric layer, multiple...
2017/0352667 PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
A method for forming patterns includes forming an etch target layer; etching the etch target layer to form a pre-pattern having a line forming portion and a...
2017/0352666 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor...
2017/0352665 Thyristor Memory Cell with Assist Device
A vertical thyristor memory array including: a vertical thyristor memory cell, the vertical thyristor memory cell including: a p+ anode; an n-base located...
2017/0352664 SEMICONDUCTOR DEVICE HAVING CONTACT PLUGS AND METHOD OF FORMING THE SAME
A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area,...
2017/0352663 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
The present disclosure provides a semiconductor device and a manufacturing method therefor. The device may include: a semiconductor substrate; a fin projecting...
2017/0352662 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES EMPLOYING PLASMA-DOPED SOURCE/DRAIN STRUCTURES AND...
Complementary metal oxide semiconductor (CMOS) devices employing plasma-doped source/drain structures and related methods are disclosed. In certain aspects, a...
2017/0352661 SEMICONDUCTOR DEVICES
The present disclosure relates to semiconductor structures and, more particularly, to segmented or cut finFET structures and methods of manufacture. The...
2017/0352660 BURIED CHANNEL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins...
2017/0352659 FIN FIELD EFFECT TRANSISTOR FABRICATION AND DEVICES HAVING INVERTED T-SHAPED GATE
A method of forming a fin field effect transistor (finFET), including forming a temporary gate structure having a sacrificial gate layer and a dummy gate layer...
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