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Patent # Description
2017/0352455 MnZn-FERRITE AND ITS PRODUCTION METHOD
A method for producing MnZn-ferrite comprising Fe, Mn and Zn as main components, and at least Co, Si and Ca as sub-components, the main components in the...
2017/0352454 SUPERCONDUCTIVE CABLE
A superconductive cable including: a former; one or more superconductive conductor layers provided outside the former; an insulating layer configured to...
2017/0352453 SUPERCONDUCTING STABILIZATION MATERIAL, SUPERCONDUCTING WIRE, AND SUPERCONDUCTING COIL
The present invention is a superconducting stabilization material used for a superconducting wire, which is formed of a copper material which contains: one or...
2017/0352452 Communication Cable
In a communication cable having a multi-core cable with a plurality of core cables in which a pair of signal lines are covered with an insulator, in which the...
2017/0352451 METAL CLAD CABLE HAVING PARALLEL LAID CONDUCTORS
A Metal-Clad (MC) cable assembly is provided. In one approach, the MC cable assembly includes a core having a plurality of conductors laid parallel to one...
2017/0352450 ELECTRICAL CHARACTERISTICS OF SHIELDED ELECTRICAL CABLES
A shielded electrical cable includes one or more conductor sets extending along a length of the cable and being spaced apart from each other along a width of...
2017/0352449 WIRE HARNESS
A wire harness includes a conductive path including a braided part and a sheath member accommodating the conductive path so as to protect the conductive path....
2017/0352448 Power Cable Polymer Composition Comprising Thermoplastic and Having Advantageous Properties
The invention relates to power cable polymer composition which comprises a thermoplastic polyethylene having a chlorine content which is less than X, wherein X...
2017/0352447 NOVEL HETEROCYCLIC COMPOUNDS AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME
Disclosed are an organic heterocyclic compound represented by Chemical Formula A and an organic light-emitting diode comprising the same. ##STR00001## wherein...
2017/0352446 GRAPHENE/POROUS IRON OXIDE NANOROD COMPOSITE AND MANUFACTURING METHOD THEREOF
The present invention discloses a graphene/porous iron oxide nanorod composite and a method for preparing the same. The composite includes graphene and...
2017/0352445 Lead-Loaded Structured Solid Organic Scintillator
A scintillator for imaging using X-rays or gamma rays or charged particles, includes a network of glass capillaries with an inner diameter no greater than 500...
2017/0352444 ROTATING RADIATION SHUTTER COLLIMATOR
A shutter for controlling radiation exposure includes a rotatable member. The rotatable member is rotatable between an open position and a closed position. The...
2017/0352443 UPGRADING POWER OUTPUT OF PREVIOUSLY-DEPLOYED NUCLEAR POWER PLANTS
Systems and methods for upgrading power output of previously-deployed nuclear power plants are described. Systems and methods may include a base nuclear power...
2017/0352442 Fuel Assembly For An SFR Nuclear Reactor, Comprising A Housing Containing A Removably Fastened Upper Neutron...
Fuel assembly for a nuclear reactor comprising a housing of longitudinal axis (X) having a central section containing nuclear-fuel pins and an upper section,...
2017/0352441 INSTRUMENTATION CONDUIT HOUSING
A conduit housing includes a top face, a pair of side faces disposed opposite each other and adjacent to the top face, a front side, and a rear side. The top...
2017/0352440 Systems and Methods of Monitoring Control Rods of Nuclear Power Plants
An automated system for on-line monitoring and coil diagnostics of rod position indicator (RPI) coils coil diagnostic, or RPI coil diagnostic system. The RPI...
2017/0352439 METHOD AND DEVICE FOR REPLACING CONTROL ROD DRIVES
A control rod drive replacement device is provided. The control rod drive replacement device includes a first channel for mounting on a support under a nuclear...
2017/0352438 LOW PRESSURE DROP NUCLEAR FUEL ASSEMBLY BOTTOM NOZZLE
A nuclear fuel assembly having a bottom nozzle with protrusions that extend from the upstream (lower or fluid entry) and downstream (upper or fluid exit) side...
2017/0352437 ROD ASSEMBLY FOR NUCLEAR REACTORS
One embodiment provides a multi-segment rod that includes a plurality of rod segments. The rod segments are removably mated to each other via mating structures...
2017/0352436 Method and system for providing fuel in a nuclear reactor
Exemplary embodiments provide automated nuclear fission reactors and methods for their operation. Exemplary embodiments and aspects include, without...
2017/0352435 TABLETOP REACTOR
Methods, apparatuses, devices, and systems for producing and controlling and fusion activities of nuclei. Hydrogen atoms or other neutral species (neutrals)...
2017/0352434 SEMICONDUCTOR DEVICE USING A PARALLEL BIT OPERATION AND METHOD OF OPERATING THE SAME
A memory device may include a memory cell array including a plurality of memory cells, and an internal operation circuit configured to perform a test operation...
2017/0352433 MEMORY DEVICE INCLUDING EXTRA CAPACITY AND STACKED MEMORY DEVICE INCLUDING THE SAME
A memory device includes a memory cell array, a multiplexing circuit, and a control logic circuit. The memory cell array includes a first sub memory cell...
2017/0352432 E-FUSE DEVICE AND ARRAY THEREOF
An e-fuse device includes a transferring circuit, a detecting-and-outputting circuit, and a fusing circuit. The transferring circuit transfers an input signal...
2017/0352431 MEMORY DEVICES CONFIGURED TO PERFORM LEAK CHECKS
Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to...
2017/0352430 NON-VOLATILE MEMORY WITH CUSTOMIZED CONTROL OF INJECTION TYPE OF DISTURB DURING PROGRAM VERIFY FOR IMPROVED...
A non-volatile memory system includes one or more control circuits configured to program memory cells and verify the programming. The verifying of the...
2017/0352429 MEMORY REFRESH METHODS AND APPARATUSES
Apparatuses and memory refresh methods are disclosed, such as those involving checking a portion of a memory device for errors in response to the memory device...
2017/0352428 Non-Volatile Memory Devices Comprising High Voltage Generation Circuits and Operating Methods Thereof
A non-volatile memory device includes a memory cell array including a plurality of memory cells, wherein at least one selected memory cell that is selected...
2017/0352427 MEMORY CONTROLLER, MEMORY CONTROL METHOD, AND COEFFICIENT DECISION METHOD
According to one embodiment, a distribution of threshold voltages of a plurality of memory cells is acquired from a nonvolatile memory which includes the...
2017/0352426 MEMORY READ APPARATUS AND METHODS
Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential,...
2017/0352425 Nonvolatile Semiconductor Storage Device
A non-volatile semiconductor memory device in which, while voltage from a first control line is applied, as a memory gate voltage, to a sub control line...
2017/0352424 Plural Distributed PBS with Both Voltage and Current Sensing SA for J-Page Hierarchical NAND Array's Concurrent...
Provided are several preferred options of 3D hierarchical NAND arrays being formed in a (2D DL//3D LBL).sub..perp.(3D CSL//3D WL) scheme and their associated...
2017/0352423 DATA RETENTION FLAGS IN SOLID-STATE DRIVES
Systems and methods for managing data retention in a solid-state storage system utilizing data retention flag bytes are disclosed. A data storage device...
2017/0352422 SOLID STATE DRIVE WITH IMPROVED POWER EFFICIENCY
A solid state drive (SSD) with improved power efficiency includes one or more non-volatile memory devices configured to operate according to a programming...
2017/0352421 MEMORY ARRAY WITH POWER-EFFICIENT READ ARCHITECTURE
Various embodiments comprise apparatuses and methods including a three-dimensional memory apparatus having upper strings and lower strings. The upper strings...
2017/0352420 FERAM-DRAM HYBRID MEMORY
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. One method includes determining whether to access a first...
2017/0352419 METHOD AND APPARATUS FOR STORING INFORMATION USING A MEMORY ABLE TO PERFORM BOTH NVM AND DRAM FUNCTIONS
A memory device is able to store data using both on-chip dynamic random-access memory ("DRAM") and nonvolatile memory ("NVM"). The memory device, in one...
2017/0352418 DDR COMPATIBLE OPEN ARRAY ACHITECTURES FOR RESISTIVE CHANGE ELEMENT ARRAYS
A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and...
2017/0352417 METHODS AND APPARATUSES HAVING A VOLTAGE GENERATOR WITH AN ADJUSTABLE VOLTAGE DROP FOR REPRESENTING A VOLTAGE...
Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM)....
2017/0352416 APPARATUSES, MEMORIES, AND METHODS FOR ADDRESS DECODING AND SELECTING AN ACCESS LINE
Apparatuses, memories, and methods for decoding memory addresses for selecting access lines in a memory are disclosed. An example apparatus includes an address...
2017/0352414 PHASE CHANGE MEMORY DEVICE
A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an...
2017/0352413 DEVICES FOR DETERMINING THE RESISTIVE STATES OF RESISTIVE CHANGE ELEMENTS
Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects...
2017/0352412 CIRCUITS FOR DETERMINING THE RESISTIVE STATES OF RESISTIVE CHANGE ELEMENTS
Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects...
2017/0352411 APPARATUSES AND METHODS FOR BI-DIRECTIONAL ACCESS OF CROSS-POINT ARRAYS
The disclosed technology generally relates to apparatuses and methods of operating the same, and more particularly to cross point memory arrays and methods of...
2017/0352410 ACCESSING MEMORY CELLS IN PARALLEL IN A CROSS-POINT ARRAY
Methods and structures for accessing memory cells in parallel in a cross-point array include accessing in parallel a first memory cell disposed between a first...
2017/0352409 PROGRAMMING MEMORIES WITH STEPPED PROGRAMMING PULSES
Methods of operating a memory device include applying a programming pulse to a plurality of memory cells selected for programming having an initial portion...
2017/0352408 AGING TOLERANT REGISTER FILE
An apparatus is provided which comprises: a first supply node to provide power supply; a column of memory cells coupled to the first supply node; a...
2017/0352407 SELF PRE-CHARGING MEMORY CIRCUITS
The present disclosure relates to semiconductor structures and, more particularly, to sensing circuit for a memory and methods of use. The memory includes a...
2017/0352406 MEMORY CONTROLLER-CONTROLLED REFRESH ABORT
A memory subsystem enables a refresh abort command. A memory controller can issue an abort for an in-process refresh command sent to a memory device. The...
2017/0352405 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM
A semiconductor system includes a semiconductor device suitable for not performing an internal refresh operation when entering a self-refresh mode in response...
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