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Patent # Description
2017/0358726 FLEXIBLE THERMOELECTRIC SYSTEM
Disclosed is a flexible thermoelectric system. More particularly, the flexible thermoelectric system includes thermoelectric units that are wearable on the...
2017/0358725 METHOD OF MANUFACTURING WIRING BOARD, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE USING THE WIRING BOARD,...
A method of manufacturing a wiring board according to one embodiment of the present disclosure includes: providing at least one first conductive member that...
2017/0358724 LIGHT EMITTING DEVICE
A light emitting device includes a mounting board including: a base part, and one or more wiring structures, each of which includes one or more first wiring...
2017/0358722 LED WITH SCATTERING FEATURES IN SUBSTRATE
In one embodiment, the transparent growth substrate of an LED die is formed to have light scattering areas, such as voids formed by a laser. In another...
2017/0358721 LIGHT EMITTING STRUCTURE AND A MANUFACTURING METHOD THEREOF
A light-emitting structure includes a semiconductor light-emitting element, a first connection point and a reflective element. The semiconductor light-emitting...
2017/0358720 METHOD OF PRODUCING LIGHT TRANSMISSIVE ELEMENT AND METHOD OF PRODUCING LIGHT EMITTING DEVICE
A method of producing a light transmissive element includes providing a holding member including an upper surface and a plurality of holes, each of the...
2017/0358719 SEMICONDUCTOR LAYERING SEQUENCE FOR GENERATING VISIBLE LIGHT AND LIGHT EMITTING DIODE
In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor...
2017/0358718 OPTOELECTRONIC SEMICONDUCTOR CHIP, METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, CONVERSION...
An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a...
2017/0358717 COLOR-FILTER DEVICE
A micro-transfer color-filter device comprises a color filter, an electrical conductor disposed in contact with the color filter, and at least a portion of a...
2017/0358716 LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
A light emitting device package includes a package body having a mounting region including a mounting surface for a light emitting device, a groove portion,...
2017/0358715 LED WITH STRESS-BUFFER LAYER UNDER METALLIZATION LAYER
Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers...
2017/0358714 LIGHT-EMITTING DIODE DEVICE FOR ENHANCING LIGHT EXTRACTION EFFICIENCY AND CURRENT INJECTION EFFICIENCY
Provided is a GaN light-emitting diode (LED) device. The LED device may include a substrate, an n-type GaN layer on the substrate, an active layer on the...
2017/0358713 TRANSPARENT LIGHT EMITTING DIODE FILM
A display device is provided. A transparent light emitting diode film includes: a base; an electrode layer located on the base and in which at least one...
2017/0358712 DEEP ULTRAVIOLET LED AND METHOD FOR MANUFACTURING THE SAME
A deep ultraviolet LED with a design wavelength of .lamda. is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer,...
2017/0358711 LIGHT EMITTING DIODE
Provided is a light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23...
2017/0358710 LIGHT EMITTING DIODE CHIP
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of...
2017/0358709 LIGHT EMITTING DIODE CHIP SCALE PACKAGING STRUCTURE
A light emitting diode chip scale packaging structure is disclosed. The light emitting diode chip scale packaging structure comprises a light emitting diode...
2017/0358708 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE PACKAGE INCLUDING SAME, AND LIGHTING SYSTEM INCLUDING SAME
A light emitting diode according to one embodiment comprises: a substrate; a light emitting structure including a first conductive semiconductor layer, an...
2017/0358707 LIGHT EMITTING DEVICE WITH TRENCH BENEATH A TOP CONTACT
Embodiments of the invention are directed to structures in a vertical light emitting device that prevent light from being generated beneath absorbing...
2017/0358706 RED LIGHT EMITTING DIODE AND LIGHTING DEVICE
A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red...
2017/0358705 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING SAME
A light emitting device includes a first conductivity type semiconductor layer including a first conductivity type dopant, an active layer disposed on the...
2017/0358704 TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk...
2017/0358703 SYSTEMS AND METHODS FOR PREPARING GaN AND RELATED MATERIALS FOR MICRO ASSEMBLY
The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that...
2017/0358702 SUBSTRATE-FREE THIN-FILM FLEXIBLE PHOTOVOLTAIC DEVICE AND FABRICATION METHOD
A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The...
2017/0358701 REDUCED DARK CURRENT PHOTODETECTOR WITH CHARGE COMPENSATED BARRIER LAYER
A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a...
2017/0358700 METAL FOIL PATTERN LAYERED BODY, METAL FOIL LAYERED BODY, METAL FOIL MULTI-LAYER SUBSTRATE, SOLAR CELL MODULE,...
A metal foil pattern layered body of the invention includes a base member; a metal foil including a metal pattern formed by an opening and a metal portion; and...
2017/0358699 PHOTOVOLTAIC MODULE WITH IMPROVED MOISTURE PROTECTION LAYER
A photovoltaic module includes front and back sealing layers and at least one photovoltaic cell positioned located therebetween. A moisture resistant layer...
2017/0358698 AMORPHOUS COPOLYESTER-BASED MATERIAL IN A PHOTOVOLTAIC MODULE
The invention relates to the use in a photovoltaic module of a monolayer film as a backsheet, this composition comprising, with respect to the total weight of...
2017/0358697 CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS
Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate...
2017/0358696 INFRARED-RAY SENSING DEVICE
An infrared-ray sensing device includes a support and a plurality of photodiodes disposed on the support. Each of the plurality of photodiodes includes a first...
2017/0358695 TEXTURED STRUCTURE OF CRYSTALLINE SILICON SOLAR CELL AND PREPARATION METHOD THEREOF
A textured structure of a crystalline silicon solar cell that is mainly constructed by a plurality of micro-structures similar to inverted pyramids; the lower...
2017/0358694 PHOTODETECTOR STRUCTURES AND MANUFACTURING THE SAME
A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front...
2017/0358693 SOLAR CELL MODULE
A solar cell module includes a plurality of compound semiconductor solar cells each including a compound semiconductor substrate, a first electrode part on a...
2017/0358692 INTEGRATED CIRCUITS WITH CAPACITORS AND METHODS FOR PRODUCING THE SAME
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate with an active layer...
2017/0358691 Reconfigurable MOS Varactor
Various particular embodiments include a semiconductor varactor structure including: a semiconductor substrate of a first conductivity type; a semiconductor...
2017/0358690 WIDE BANDGAP SEMICONDUCTOR SWITCHING DEVICE WITH WIDE AREA SCHOTTKY JUNCTION, AND MANUFACTURING PROCESS THEREOF
A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a...
2017/0358689 VERTICAL TRANSISTOR FABRICATION AND DEVICES
A method of fabricating a vertical field effect transistor including forming a first recess in a substrate; epitaxially growing a first drain from the first...
2017/0358688 TRANSISTOR ARRAY PANEL
A transistor is positioned on a substrate. The transistor includes a semiconductor layer. A buffer layer is positioned between the substrate and the...
2017/0358687 FORMATION OF BOTTOM JUNCTION IN VERTICAL FET DEVICES
Formation of a bottom junction in vertical FET devices may include, for instance, providing an intermediate semiconductor structure comprising a semiconductor...
2017/0358686 Approach for an Area-Efficient and Scalable CMOS Performance Based on Advanced Silicon-On-Insulator (SOI),...
The invention provides the guided design approach to optimize the device performance for a best area-efficient layout footprint in a single-leg MOS device that...
2017/0358685 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A miniaturized transistor having excellent electrical characteristics is provided with high yield. Further, a semiconductor device including the transistor and...
2017/0358684 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the...
2017/0358683 SEMICONDUCTOR DEVICE
An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state...
2017/0358682 TRANSISTOR
A transistor with a small footprint is provided. A transistor having high reliability is provided. A transistor is provided over an insulating layer that has a...
2017/0358681 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a...
2017/0358680 Semiconductor Devices Including Gate Dielectric Structures
A semiconductor device is provided including a fin active region on a substrate. The fin active region includes a lower region, a middle region, and an upper...
2017/0358679 III-V COMPOUND SEMICONDUCTOR CHANNEL POST REPLACEMENT GATE
After forming a sacrificial gate structure straddling a stacking of a semiconductor mandrel structure and a dielectric mandrel cap and spacers present on...
2017/0358678 FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A fin-type field effect transistor comprising a substrate, a plurality of insulators, at least one gate stack and strained material portions is described. The...
2017/0358677 STRAINED SILICON COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INCLUDING A SILICON CONTAINING TENSILE N-TYPE FIN...
A method of forming a semiconductor device that includes forming a strain relaxed buffer (SRB) layer atop a supporting substrate, and epitaxially forming a...
2017/0358676 SEMICONDUCTOR DEVICE
The present disclosure provides semiconductor devices and fabrication methods thereof. A stacked substrate includes an insulating layer between a substrate and...
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