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Patent # Description
2017/0373224 Device with Inverted Large Scale Light Extraction Structures
An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first...
2017/0373223 QUANTUM DOT HAVING CORE-SHELL STRUCTURE
A quantum dot having core-shell structure, including a core formed of ZnO.sub.zS.sub.1-z of wurtzite crystal structure of hexagonal crystal system; a first...
2017/0373222 Semiconductor Layer Including Compositional Inhomogeneities
A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap...
2017/0373221 Nitride White-light Light-Emitting Diode
A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the...
2017/0373220 Optoelectronic Component
An optoelectronic component is disclosed. In an embodiment the optoelectronic component includes an active zone configured to produce electromagnetic...
2017/0373219 METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE
A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor...
2017/0373218 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
The present techniques provide a method for producing a Group III nitride semiconductor light-emitting device, which method is intended to grow semiconductor...
2017/0373217 SOLAR CELL BONDING
A bonding apparatus includes a heat source, a first plate, a second plate, and an actuation mechanism. The first plate is coupled to the heat source. The first...
2017/0373216 STRUCTURAL BONDING COMPOSITIONS AND ATTACHMENT BRACKETS, AND THEIR USE IN PHOTOVOLTAIC SOLAR MODULES
The present disclosure relates to structural bonding compositions and attachment brackets, and their use in photovoltaic solar modules. Another aspect of the...
2017/0373215 HEAT-CURABLE SILICONE RESIN COMPOSITION FOR PRIMARILY ENCAPSULATING PHOTOCOUPLER, PHOTOCOUPLER ENCAPSULATED BY...
Provided are a heat-curable silicone resin composition for primarily encapsulating photocoupler that is superior in heat resistance and curability, has no...
2017/0373214 COLOR IMAGING USING ARRAY OF WAVELENGTH-SELECTIVE OPTOELECTRONIC ELEMENTS AS LIGHT-FIELD IMAGE OR SENSOR
Light-sensor array systems for capturing multiple-color images and light-fields using array of wavelength-selective optoelectronic elements (rather than...
2017/0373213 PHOTOVOLTAIC DEVICES WITH IMPROVED N-TYPE PARTNER AND METHODS FOR MAKING THE SAME
A photovoltaic device with an improved n-type partner and a method for making the same. The device includes: a transparent substrate; a transparent conductive...
2017/0373212 SOLAR CELL MODULE
A solar cell module includes: a first solar cell; a second solar cell disposed apart from the first solar cell with a space therebetween; a first light...
2017/0373211 CELL-TO-CELL INTERCONNECT
A metallic article for a photovoltaic cell is disclosed. The metallic article includes a first region having a plurality of electroformed elements that are...
2017/0373210 SOLAR CELL MODULE
A solar cell module includes: two solar cells adjacent to each other in a direction parallel to a light-receiving surface; a tab line which is disposed on a...
2017/0373209 ELECTRONIC DEVICE MODULE
An electronic device module including a glass cover sheet, a polymeric front polymeric material, an electronic device, a polymeric back material and a...
2017/0373208 Method for manufacturing a thin film solar cell arrangement and such a thin film solar cell arrangement
Solar cell arrangement of a thin film solar cell array on a substrate; each solar cell being layered with a bottom electrode, a photovoltaic active layer, a...
2017/0373207 SOLAR CELL MODULE, METHOD FOR MANUFACTURING SOLAR CELL MODULE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE...
A solar cell module can include a printed circuit board (PCB) having an electrode connection part, at least one solar cell mounted on the PCB and electrically...
2017/0373206 METHOD OF PASSIVATING AND ENCAPSULATING III-V SURFACES
A method for producing a surfaced passivated, encapsulated surface III-V type II superlattice (T2SL) photodetector, more specifically a p-type heterojunction...
2017/0373205 A Transducing Apparatus and Method for Providing Such Apparatus
An apparatus and method, the apparatus including a charge carrier wherein the charge carrier includes a continuous three dimensional framework including a...
2017/0373204 PHOTOVOLTAIC MODULE WITH FLEXIBLE WIRE INTERCONNECTION
A solar panel includes a first photovoltaic cell, a second photovoltaic cell, and a flexible electrical connection structure which comprises an electrically...
2017/0373203 METHOD FOR PROCESSING SURFACE OF LIGHT-TRANSMITTING GLASS PROCESSED BY SAID METHOD
To impart an re properties without reducing the amount of transmitted light, a method for processing a surface of light-transmitting-glass accord o the present...
2017/0373202 METHOD FOR PRODUCING A TEXTURED STRUCTURE OF A CRYSTALLINE SILICON SOLAR CELL
A method for producing a textured structure of a crystalline silicon solar cell is provided, including the following steps: (1) forming a porous layer...
2017/0373201 SAFETY DEVICE FOR PHOTOVOLTAIC INSTALLATIONS
The present disclosure is directed to a safety device for photovoltaic installations. The safety device includes a first terminal adapted to connect to a first...
2017/0373200 NITRIDE SEMICONDUCTOR DEVICE
A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer...
2017/0373199 ELECTRONIC DEVICE HAVING SCHOTTKY DIODE
The electronic device having a Schottky diode includes first and second electrodes disposed on a semiconductor substrate and spaced apart from each other. A...
2017/0373198 Ferroelectric Field Effect Transistors, Pluralities Of Ferroelectric Field Effect Transistors Arrayed In Row...
A ferroelectric field effect transistor comprises a semiconductive channel comprising opposing sidewalls and an elevationally outermost top. A source/drain...
2017/0373197 THREE-DIMENSIONAL MEMORY DEVICE WITH AMORPHOUS BARRIER LAYER AND METHOD OF MAKING THEREOF
Memory stack structures are formed through an alternating stack of insulating layers and sacrificial material layers. Backside recesses are formed by removal...
2017/0373195 TRANSISTOR AND SEMICONDUCTOR DEVICE
A novel transistor is provided. The transistor includes a gate electrode, first and second conductors, a gate insulator, and an oxide. The gate insulator is...
2017/0373194 TRANSISTOR
A gate insulator is between a gate electrode and a metal oxide. The gate electrode includes a region overlapping with the metal oxide with the gate insulator...
2017/0373193 SEMICONDUCTOR DEVICE, POWER DIODE, AND RECTIFIER
An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high...
2017/0373192 TRANSISTOR AND SEMICONDUCTOR DEVICE
A transistor includes a gate electrode, a first conductor, a second conductor, a gate insulator, and a metal oxide. The gate insulator is located between the...
2017/0373191 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating semiconductor device is disclosed. First, a fin-shaped structure is formed on a substrate, a first liner is formed on the substrate...
2017/0373190 FinFETs with Strained Well Regions
A device includes a substrate, insulation regions extending into the substrate, a first semiconductor region between the insulation regions and having a first...
2017/0373189 Method for Semiconductor Device Fabrication with Improved Source Drain Epitaxy
A semiconductor structure includes a substrate, first gate structures and second gate structures over the substrate, third epitaxial semiconductor features...
2017/0373188 FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH AN ASYMMETRIC GATE STRUCTURE
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, including forming one or more tubular...
2017/0373187 Semiconductor Device Including a LDMOS Transistor and Method
In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a...
2017/0373186 MOSFET DEVICE AND FABRICATION
A semiconductor device, comprising: a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon...
2017/0373185 NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL P-BODY CONTACT
A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each...
2017/0373184 TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the...
2017/0373183 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In a semiconductor device, in a gate insulating film which is formed on/over an inner wall of a trench, the film thickness of a part of a gate insulating film...
2017/0373182 Semiconductor Devices and Methods for Forming a Semiconductor Device
A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure...
2017/0373181 METAL OXIDE THIN FILM TRANSISTORS (TFTS) AND THE MANUFACTURING METHOD THEREOF
The present disclosure relates to a metal oxide TFT and the manufacturing method thereof. The TFT includes a substrate, a buffering layer formed on the...
2017/0373180 POWER MOSFET SEMICONDUCTOR
A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of...
2017/0373179 DEPLETION MODE SEMICONDUCTOR DEVICES INCLUDING CURRENT DEPENDENT RESISTANCE
A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a...
2017/0373178 Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide...
The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer,...
2017/0373177 Semiconductor Device
The invention relates to a semiconductor component comprising at least one field effect transistor, said transistor comprising at least a back barrier layer, a...
2017/0373176 GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYERS AND PROCESS FOR MAKING THE SAME
A high-electron mobility transistor includes a substrate layer, a first buffer layer provided on the substrate layer, a barrier layer provided on the first...
2017/0373175 SYSTEMS AND METHODS FOR PROVIDING VERTICAL ACCESS TO THE COLLECTOR OF A HETEROJUNCTION BIPOLAR TRANSISTOR
Disclosed is a heterojunction bipolar transistor, and method of manufacturing the same, including an emitter having a conductive emitter contact coupled to a...
2017/0373174 RADIATION ENHANCED BIPOLAR TRANSISTOR
Disclosed examples include integrated circuits and bipolar transistors with a first region of a first conductivity type in a substrate, a collector region of a...
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