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Patent # Description
2017/0372920 WAFER LEVEL PACKAGING OF MICROBOLOMETER VACUUM PACKAGE ASSEMBLIES
An apparatus for the wafer level packaging (WLP) of micro-bolometer vacuum package assemblies (VPAs), in one embodiment, includes a wafer alignment and bonding...
2017/0372919 Flowable Amorphous Silicon Films For Gapfill Applications
Methods for seam-less gapfill comprising forming a flowable film by PECVD and curing the flowable film to solidify the film. The flowable film can be formed...
2017/0372918 Composition and Method Used for Chemical Mechanical Planarization of Metals
Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least...
2017/0372917 PATTERN TRANSFER TECHNIQUE AND METHOD OF MANUFACTURING THE SAME
A photo-free lithography process with low cost, high throughput, and high reliability is provided. A template mask is bonded to a production workpiece and...
2017/0372916 ETCHING PROCESS METHOD
An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature...
2017/0372915 PLASMA ETCHING METHOD
The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas...
2017/0372914 Apparatus and Method for Processing Gas, and Storage Medium
An apparatus for processing a gas includes: a mounting part installed in a processing container and on which a substrate is mounted; a first gas flow path...
2017/0372913 Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device...
A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be...
2017/0372912 Systems and Methods for Reverse Pulsing
Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The...
2017/0372911 ION BEAM ETCHING UTILIZING CRYOGENIC WAFER TEMPERATURES
The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while...
2017/0372910 REINFORCING STRUCTURE, VACUUM CHAMBER AND PLASMA PROCESSING APPARATUS
There is provided a reinforcing structure in which a plurality of beam members provided on a top surface of a cover of a vacuum chamber for performing...
2017/0372909 SINGLE OR MUTLI BLOCK MASK MANAGEMENT FOR SPACER HEIGHT AND DEFECT REDUCTION FOR BEOL
Aspects of the disclosure include method of making semiconductor structures. Aspects include providing a semiconductor structure including a plurality of...
2017/0372908 CUTTING METHOD FOR CUTTING PROCESSING-TARGET OBJECT AND CUTTING APPARATUS THAT CUTS PROCESSING-TARGET OBJECT
There is provided a cutting method for cutting a processing-target object by a cutting blade. The cutting method includes a holding step of holding the...
2017/0372907 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Reliability of a semiconductor device is improved. A power device includes: a semiconductor chip; a chip mounting part; a solder material electrically coupling...
2017/0372906 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning...
2017/0372905 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
When a nitride semiconductor layer into which impurity ions have been implanted is subjected to annealing after a protective film is provided on the nitride...
2017/0372904 METHOD FOR OBTAINING PATTERNS IN A LAYER
The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of...
2017/0372903 METHOD FOR DOPING SEMICONDUCTORS
The present invention relates to a process for the production of structured, highly efficient solar cells and of photovoltaic elements which have regions of...
2017/0372902 CRYSTAL PRODUCTION SYSTEMS AND METHODS
Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon coated particles having very low levels of contaminants...
2017/0372901 METHOD FOR PREPARING ELECTRODE
The present disclosure discloses a method for preparing electrode including: providing a substrate; forming a buffer layer on the substrate; forming a...
2017/0372900 Multi-Layer Mask and Method of Forming Same
A method includes forming a first insulating layer over a substrate, the first insulating layer having a non-planar top surface, the first insulating layer...
2017/0372899 DIAMOND LIKE CARBON LAYER FORMED BY AN ELECTRON BEAM PLASMA PROCESS
Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a...
2017/0372898 Methods for the Continuous, Large-Scale Manufacture of Functional Nanostructures
A method for forming nanostructures including introducing a hollow shell into a reactor. The hollow shell has catalyst nanoparticles exposed on its interior...
2017/0372897 High Rate Sputter Deposition of Alkali Metal-Containing Precursor Films Useful to Fabricate Chalcogenide...
The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal...
2017/0372896 TRANSPARENT NANOCRYSTALLINE DIAMOND COATINGS AND DEVICES
A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a...
2017/0372895 METHOD OF DENSIFYING FILMS IN SEMICONDUCTOR DEVICE
Methods of densifying films, cross-linking films, and controlling the stress of films are provided herein. Methods include forming a removable film on a...
2017/0372894 Method of Manufacturing Semiconductor Device
Described herein is a technique capable of improving the productivity of manufacturing of a semiconductor device in a method of processing a film by repeating...
2017/0372893 CLEANING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
The cleaning apparatus includes multiple kinds of cleaning modules each configured to perform a cleaning processing of a substrate, a first accommodating...
2017/0372892 Gap Filling Materials and Methods
In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer...
2017/0372891 Mechanisms for Forming Patterns Using Multiple Lithography Processes
The present disclosure provides a method for forming patterns in a semiconductor device. The method includes providing a substrate and a patterning-target...
2017/0372890 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle...
2017/0372889 METHODS OF PRODUCING SEED CRYSTAL SUBSTRATES AND GROUP 13 ELEMENT NITRIDE CRYSTALS, AND SEED CRYSTAL SUBSTRATES
A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an...
2017/0372888 SEMICONDUCTOR WAFER COMPRISING A MONOCRYSTALLINE GROUP-IIIA NITRIDE LAYER
Problems associated with the mismatch between a silicon substrate and a group-IIIA nitride layer are addressed by employing a silicon substrate processed to...
2017/0372887 TRENCH FORMATION METHOD FOR RELEASING A SUBSTRATE FROM A SEMICONDUCTOR TEMPLATE
A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor...
2017/0372886 Deposition of SiN
Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD),...
2017/0372885 MANUFACTURING PROCESS OF WAFER THINNING
A manufacturing process of wafer thinning includes a step of wafer-grinding to grind a surface of a wafer to a first predetermined thickness, and a step of...
2017/0372884 FORMATION OF EPITAXIAL LAYERS VIA DISLOCATION FILTERING
A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to...
2017/0372883 Ion Trap Mass Spectrometer
An apparatus 41 and operation method are provided for an electrostatic trap mass spectrometer with measuring frequency of multiple isochronous ionic...
2017/0372882 METHOD OF TANDEM MASS SPECTROMETRY
A method of tandem mass spectrometry is disclosed. A quasi-continuous stream of ions from an ion source (20) and having a relatively broad range of mass to...
2017/0372881 Mass Spectrometer
A mass spectrometer is disclosed comprising a mass selective ion trap and a quadrupole rod set mass filter arranged downstream of the mass selective ion trap....
2017/0372880 ADJUSTABLE RETURN PATH MAGNET ASSEMBLY AND METHODS
The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly...
2017/0372879 TANTALUM SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR
Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a...
2017/0372878 PLASMA PROCESSING APPARATUS AND OPERATIONAL METHOD THEREOF
A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing...
2017/0372877 SUPPORT APPARATUS FOR PLASMA ADJUSTMENT, METHOD FOR ADJUSTING PLASMA, AND STORAGE MEDIUM
A support apparatus for plasma adjustment includes a storage part storing index value estimation data including data defining an amount of change in an index...
2017/0372876 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A manufacturing method of a semiconductor device includes the steps of: (a) placing a semiconductor wafer over a stage provided in a chamber, the pressure in...
2017/0372875 PLASMA GENERATOR
Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unit 110 and bias electrode...
2017/0372874 Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and...
2017/0372873 PLASMA PROCESSING METHOD
A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus is provided. The plasma processing method comprises:...
2017/0372872 UNIFORMITY CONTROL CIRCUIT FOR USE WITHIN AN IMPEDANCE MATCHING CIRCUIT
An impedance matching circuit (IMC) is described. The IMC includes a first circuit that includes a first plurality of tuning elements defined along a path. The...
2017/0372871 CATHODIC ARC DEPOSITION APPARATUS AND METHOD
A coating method includes vaporizing a portion of a cathode to form a metallic plasma, and directing the metallic plasma toward the workpiece. A first magnetic...
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