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Patent # Description
2018/0033927 ELECTRONIC COMPONENT INCLUDING A MATERIAL COMPRISING EPOXYSILANE-MODIFIED POLYORGANOSILOXANE
The present invention relates to an optoelectronic component comprising a semiconductor (1) and a polyorganosiloxane. The polyorganosiloxane is obtainable by...
2018/0033926 METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE
A method of manufacturing a light-emitting device that includes a circuit board with p- and n-electrodes formed on a surface of a substrate and a ...
2018/0033925 METHOD OF PRODUCING A LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE
A method of producing a light-emitting device includes providing a carrier having a carrier top face and at least one light-emitting semiconductor chip...
2018/0033924 LIGHT EMITTING DIODES, COMPONENTS AND RELATED METHODS
Light emitting diodes, components, and related methods, with improved performance over existing light emitting diodes. In some embodiments light emitter...
2018/0033923 WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE
In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region...
2018/0033922 LIGHT EMITTING DEVICE AND THE MANUFACTURING METHOD FOR SAME
A light emitting device includes a light emitting element to emit a first light having a first peak wavelength. A second wavelength converting member contains...
2018/0033921 Semiconductor Illuminating Device
A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and...
2018/0033920 LIGHT SOURCE ASSEMBLY WITH IMPROVED COLOR UNIFORMITY
A light source assembly comprising: a solid state lighting device; a wavelength converting element arranged to receive light emitted by the solid state...
2018/0033919 ILLUMINATED TRANSFLECTIVE GEMSTONES, METHODS, AND APPARATUS THEREOF
A light source comprising a substrate, wherein the substrate is coated with a transflective thin film optical coating, wherein the coating results in a...
2018/0033918 OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the...
2018/0033917 METHOD OF FORMING NANORODS AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
A method of forming semiconductor nanorods includes: placing, in a chamber, a masking material and a base comprising a semiconductor, wherein an etching rate...
2018/0033916 LED WITH PATTERNED SURFACE FEATURES BASED ON EMISSION FIELD PATTERNS
The escape surface of a light emitting element includes features that include sloped surfaces that have angles of inclination that are based on the direction...
2018/0033915 Substrate With Topological Features for Steering Fluidic Assembly LED Disks
Embodiments are related to integrated circuit (IC) fabrication and, more particularly, to a fluidic assembly process for the placement of light emitting diodes...
2018/0033914 THIN-FILM FLIP-CHIP LIGHT EMITTING DIODE HAVING ROUGHENING SURFACE AND METHOD FOR MANUFACTURING THE SAME
A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a...
2018/0033913 Group III Nitride Laminate and Light Emitting Element Comprising Said Laminate
A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an Al.sub.xGa.sub.1-xN layer (0<X.ltoreq.1) that is...
2018/0033912 III-P LIGHT EMITTING DEVICE WITH A SUPERLATTICE
A device includes a semiconductor structure comprising a III-P light emitting layer disposed between an n-type region and a p-type region. The n-type region...
2018/0033911 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A semiconductor light-emitting element includes a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes a...
2018/0033910 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND DISPLAY APPARATUS
[Solving Means] A first conductive layer of a semiconductor light-emitting device including a light-emitting edge and an opposite edge includes a current...
2018/0033909 SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND...
Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one...
2018/0033908 SEMICONDUCTOR DEVICE, LIGHT EMISSION ELEMENT ARRAY, OPTICAL PRINT HEAD, AND METHOD OF PRODUCING SEMICONDUCTOR...
A semiconductor device includes: a p type first semiconductor layer that contains acceptors as impurities; an n type second semiconductor layer that is...
2018/0033907 NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME
A nitride semiconductor template includes a Ga.sub.2O.sub.3 substrate, a buffer layer formed on the Ga.sub.2O.sub.3 substrate and including AlN as a principal...
2018/0033906 MONOLITHIC INTEGRATION OF III-V CELLS FOR POWERING MEMORY ERASURE DEVICES
A method for making a photovoltaic device is provided that includes the steps of providing a silicon substrate having a complementary metal-oxide semiconductor...
2018/0033905 FLEXIBLE SILICON INFRARED EMITTER
An apparatus includes a flexible silicon (Si) substrate, such as a crystalline n-type substrate, and a heterostructure structure formed on the silicon...
2018/0033904 SOLAR CELL, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL MODULE
The solar cell includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode comprises a first...
2018/0033903 STRUCTURE USING A THIN FILM TYPE SOLAR CELL
A structure using a thin film type solar cell is disclosed, which comprises an external plate exposed to solar rays; a first adhesive layer provided on an...
2018/0033902 SHINGLED SOLAR CELLS OVERLAPPING ALONG NON-LINEAR EDGES
Solar devices and methods for producing solar devices are disclosed. In some examples, a solar device includes solar cells arranged in a shingled manner such...
2018/0033901 SEMI TRANSPARENT BACK CONTACT AND SOLAR CELL USING THE SAME, AND A METHOD OF MANUFACTURING THEM
The invention relates to a semitransparent back electrode, a solar cell using the same, and a method for manufacturing them and, more specifically, to a...
2018/0033900 SOLAR CELL WITH A METAL CHARGE CARRIER DISCHARGE STRUCTURE
The invention relates to a solar cell (1) having a surface (6) which is provided for receiving solar radiation. A charge carrier discharge structure (7) is...
2018/0033899 SOLAR CELL
A solar cell can include a photoelectric conversion unit including a semiconductor substrate, a tunneling layer disposed on the semiconductor substrate, a...
2018/0033898 SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL
A solar cell includes: a first semiconductor layer provided in a first area on a principal surface; an insulating layer provided on the first semiconductor...
2018/0033897 CONDUCTIVE PASTE FOR FORMING SOLAR CELL ELECTRODE
The present invention has an object of providing a conductive paste for forming solar cell electrodes that obtains favorable electrical characteristics and...
2018/0033896 PHOTODETECTION DEVICE AND PHOTODETECTION SYSTEM
A semiconductor substrate has a first surface and a second surface which is opposite to the first surface. A photoelectric conversion portion has a PN junction...
2018/0033895 ARRAY OF GEIGER-MODE AVALANCHE PHOTODIODES FOR DETECTING INFRARED RADIATION
An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external...
2018/0033894 METAL-FOIL-ASSISTED FABRICATION OF THIN-SILICON SOLAR CELL
One embodiment relates to a method of fabricating a solar cell. A silicon lamina is cleaved from the silicon substrate. The backside of the silicon lamina...
2018/0033893 THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING SAME
The present specification relates to a thin-film transistor substrate and a display device including the same.
2018/0033892 SEMICONDUCTOR DEVICE
A semiconductor device having stable electrical characteristics is provided. Alternatively, a highly reliable semiconductor device suitable for miniaturization...
2018/0033891 OXIDE SEMICONDUCTOR DEVICE
An oxide semiconductor device includes an oxide semiconductor transistor and a protection wall. The protection wall extends in a vertical direction and...
2018/0033890 METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES
An IC device includes a substrate including a device region having a fin-type active region and a deep trench region; a gate line that extends in a direction...
2018/0033889 METHOD FOR FORMING STRESSOR, SEMICONDUCTOR DEVICE HAVING STRESSOR, AND METHOD FOR FORMING THE SAME
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between...
2018/0033888 High Voltage Transistor Structure and Method
A device comprises a buried layer over a substrate, a first well over the buried layer, a first high voltage region and a second high voltage region extending...
2018/0033887 INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE
The integrated circuit includes a gate structure over a substrate. The integrated circuit further includes a first silicon-containing material structure in a...
2018/0033886 Semiconductor Devices, Electrical Devices and Methods for Forming a Semiconductor Device
A semiconductor device includes a plurality of compensation regions arranged in a semiconductor substrate of the semiconductor device. The compensation regions...
2018/0033885 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device, including a silicon carbide substrate, multiple trenches provided in the silicon carbide substrate, a first...
2018/0033884 Semiconductor Device Having a Non-Depletable Doping Region
A semiconductor device includes a plurality of compensation regions of a vertical electrical element arrangement, a plurality of drift regions of the vertical...
2018/0033882 Silicon Germanium P-Channel FinFET Stressor Structure and Method of Making Same
A source/drain (S/D) structure includes a SiGe structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel...
2018/0033881 3DIC DEVICE WITH MEMORY
A semiconductor device, the device including: a first stratum including memory periphery circuits; a second stratum including an array of first memory cells,...
2018/0033880 HIGH POWER SEMICONDUCTOR DEVICE
This application provides a high power semiconductor device, which is characterized by forming two diodes connected in parallel and a schottky contact on a...
2018/0033879 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a...
2018/0033878 STUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES
An integrated circuit includes at least one input-output pad and a terminal intended to be connected to a source of a reference potential and further including...
2018/0033877 ELECTRONIC DEVICE INCLUDING A HEMT
An electronic device can include a bidirectional HEMT. In an aspect, the electronic device can include a pair of switch gate and blocking gate electrodes,...
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