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Patent # Description
2018/0198035 Quantum Dot Based Color Conversion Layer in Display Devices
Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of...
2018/0198034 OPTOELECTRONIC COMPONENT COMPRISING A CONVERSION ELEMENT, METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT...
A method of producing an optoelectronic component including a conversion element includes: A) providing a layer sequence having an active layer, wherein the...
2018/0198033 DEVICE FOR EMITTING LIGHT
The present invention relates to a device for emitting light comprising a light generating element for generating light, a coating layer for converting the...
2018/0198032 Process Method for Refining Photoconverter to Bond-Package LED and Refinement Equipment System
Provided are a process method for bond-packaging an LED using a refined photoconverter, and a refining equipment system. The process method includes the...
2018/0198031 LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING THE SAME, BACKLIGHT UNIT AND DISPLAY DEVICE INCLUDING...
A light emitting device package includes a package frame in which a recessed portion is defined in a center thereof, the package frame including, an interior...
2018/0198030 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic...
2018/0198029 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING REFLECTIVE ELEMENT AND METHOD OF MAKING SAME
A light emitting device and method of forming the same, the method including etching grooves into semiconductor layers disposed on a substrate to form mesas,...
2018/0198028 OPTOELECTRONIC SEMICONDUCTOR CHIP
In one embodiment, the optoelectronic semiconductor chip (1) comprises a first semiconductor region (21) of a first conductivity type and a second ...
2018/0198027 ELECTRON EMITTER AND LIGHT EMITTING APPARATUS COMPRISING SAME
The present invention relates to an electron emitter, a method for manufacturing the same, and a light emitting apparatus comprising the same, and, more...
2018/0198026 DEEP ULTRAVIOLET LED AND METHOD FOR MANUFACTURING THE SAME
The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength .lamda., and includes, sequentially...
2018/0198025 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second...
2018/0198024 MICRO LIGHT-EMITTING DIODE CHIP
A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type...
2018/0198023 ULTRAVIOLET LIGHT EMITTING DEVICE HAVING CURRENT BLOCKING LAYER
Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second...
2018/0198022 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING FLOATING CONDUCTIVE PATTERN
A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first...
2018/0198021 INFRARED LED
An infrared LED having a monolithic and stacked structure, having an n-doped base substrate, which includes GaAs, a lower cladding layer, an active layer for...
2018/0198020 MICRO LIGHT EMITTING DIODE CHIP AND DISPLAY PANEL
A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a...
2018/0198019 SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer...
2018/0198018 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
A light emitting device includes: a substrate; a first electrode disposed on the substrate; a first insulating layer disposed on the substrate to be spaced...
2018/0198017 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
Provided are a solar cell having a good conversion efficiency in which damage to a p-n junction structure is prevented when an antireflection film is removed,...
2018/0198016 APD Focal Plane Arrays with Backside Vias
An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed...
2018/0198015 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
A diode, UV radiation detector, and method of manufacturing semiconductor device that includes a diode with a substrate having a first side and a second side....
2018/0198014 SOLAR CELL MODULE AND METHOD OF MANUFACTURE THEREOF
A solar cell module having an extended lifetime and improved efficiency achieved by improved solar cell efficiency, and reduced UV damage to the photoelectric...
2018/0198013 FLEXIBLE PRINTED CIRCUIT, CONCENTRATED PHOTOVOLTAIC MODULE, CONCENTRATED PHOTOVOLTAIC PANEL, AND METHOD FOR...
A flexible printed circuit for concentrated photovoltaics includes: a conductive layer to which a power generating element is connected; an insulating layer...
2018/0198012 ENCAPSULANT FOR PV MODULE, METHOD OF MANUFACTURING THE SAME AND PV MODULE COMPRISING THE SAME (AS AMENDED)
The present application relates to an encapsulant for a PV module, a method of manufacturing the same, and a PV module. The encapsulant according to an...
2018/0198011 SOLAR CELL PANEL
A solar cell panel using a back contact solar cell is disclosed. The solar cell panel includes a front substrate, a back sheet positioned opposite the front...
2018/0198010 Flexible Laminates for Solar Modules
A solar module includes a laminate structure having at least two solar cells. Each of the solar cells has an individual reinforcement laminated to one face of...
2018/0198009 DEFORMABLE PAPER ORIGAMI OPTOELECTRONIC DEVICES
Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper...
2018/0198008 PHOTOVOLTAIC STRUCTURES WITH SEGMENTED BUSBARS FOR INCREASED THERMAL CYCLING RELIABILITY
One embodiment can provide an electrode grid of a photovoltaic structure. The electrode grid can include a plurality of finger lines and a busbar coupled to...
2018/0198007 SOLAR CELL MODULE AND PORTABLE CHARGER
A solar cell module having flexibility is disclosed. The solar cell module includes a first solar cell and a second solar cell disposed adjacent to each other....
2018/0198006 CONTROL OF SURFACE PROPERTIES BY DEPOSITION OF PARTICLE MONOLAYERS
The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic...
2018/0198005 METHOD FOR DETECTING AND CONVERTING INFRARED ELECTROMAGNETIC RADIATION
A method for detecting infrared electromagnetic radiation and for converting same into an electrical signal, an optoelectronic component, in particular an...
2018/0198004 SYSTEM AND METHOD FOR ILLUMINATING A SAMPLE AND COLLECTING LIGHT REFLECTED FROM THE SAMPLE
A scanning system can include an illuminator, configured to produce an illuminating beam, and a fixation unit, configured to mechanically support a sample to...
2018/0198003 METHODS AND SYSTEMS TO BOOST EFFICIENCY OF SOLAR CELLS
The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic...
2018/0198002 METHOD FOR MANUFACTURING SOLAR CELL
Disclosed is a method for manufacturing a solar cell, the method including: forming a semiconductor layer on one surface of a semiconductor substrate; forming...
2018/0198001 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
In a semiconductor device including a split gate type MONOS memory, and a trench capacitor element having an upper electrode partially embedded in trenches...
2018/0198000 SEMICONDUCTOR STRUCTURE INCLUDING A VARACTOR AND METHOD FOR THE FORMATION THEREOF
A method includes providing a semiconductor structure comprising a varactor region and a field effect transistor region. The varactor region includes a body...
2018/0197999 HIGH-LINEARITY TRANSISTORS
A transistor includes a first gate-controlled region having a first threshold voltage and a second gate-controlled region in parallel with the first...
2018/0197998 THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS, AND FABRICATION METHODS THEREOF
The present application discloses A thin film transistor (TFT), including: a substrate; a source-drain layer comprising a source electrode and a drain...
2018/0197997 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor...
2018/0197996 ARRAY SUBSTRATE, AND DISPLAY DEVICE, AND FABRICATION METHODS
A semiconductor device, an array substrate, and a display device, and their fabrication methods are provided. An exemplary semiconductor device includes a...
2018/0197995 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a...
2018/0197994 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current...
2018/0197993 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
The present invention relates to a semiconductor device and a method of manufacturing the same. There is provided a semiconductor device comprising: a...
2018/0197992 STRESS INDUCTION IN 3D DEVICE CHANNEL USING ELASTIC RELAXATION OF HIGH STRESS MATERIAL
A method for inducing stress in a device channel includes forming a stress adjustment layer on a substrate, the stress adjustment layer including an as...
2018/0197991 SEMICONDUCTOR STRUCTURE HAVING A JUNCTION FIELD EFFECT TRANSISTOR AND A HIGH VOLTAGE TRANSISTOR AND METHOD FOR...
The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples...
2018/0197990 REDUCED RESISTANCE SOURCE AND DRAIN EXTENSIONS IN VERTICAL FIELD EFFECT TRANSISTORS
Semiconductor devices and methods of forming the same include forming a bottom source/drain region in a semiconductor substrate under a semiconductor fin....
2018/0197989 REDUCED RESISTANCE SOURCE AND DRAIN EXTENSIONS IN VERTICAL FIELD EFFECT TRANSISTORS
Semiconductor devices and methods of forming the same include forming semiconductor fins on a semiconductor substrate. A bottom source/drain region is formed...
2018/0197988 MULTI-GATE VERTICAL FIELD EFFECT TRANSISTOR WITH CHANNEL STRIPS LATERALLY CONFINED BY GATE DIELECTRIC LAYERS,...
A matrix rail structure is formed over a substrate. The matrix rail structure includes a pair of lengthwise sidewalls that extend along a first horizontal...
2018/0197987 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
Semiconductor structures and fabrication methods thereof are provided. An exemplary semiconductor structure includes a base substrate having a first well and a...
2018/0197986 P-CHANNEL DEMOS DEVICE
A p-channel drain extended metal oxide semiconductor (DEPMOS) device includes a doped surface layer at least one nwell finger defining an nwell length and...
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