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Patent # Description
2018/0212091 Infrared transmissive concentrated photovoltaics for coupling solar electric energy conversion to solar thermal...
The use of photovoltaic (PV) cells to convert solar energy to electricity is becoming increasingly prevalent; however, there are still significant limitations...
2018/0212090 THIN FILM SOLAR CELL FOR BIPV AND METHOD FOR MANUFACTURING THE SAME
Disclosed is a thin film solar cell for BIPV capable of improving a utility value for the exterior by visually changing a black color of an inorganic thin film...
2018/0212089 BACK SHEET FOR SOLAR CELL MODULE AND SOLAR CELL MODULE MADE THEREOF
Disclosed herein is a back sheet comprising a substrate comprising a silane crosslinked polyethylene composition, an adhesive layer, and a weather resistant...
2018/0212088 SEALING MATERIAL SHEET FOR SOLAR CELL MODULES AND SEALING MATERIAL-INTEGRATED BACKSIDE PROTECTIVE SHEET USING SAME
Provided are: a sealing material sheet for solar cell modules, and a sealing material-integrated rear-surface protecting sheet. A sealing material sheet 1 for...
2018/0212087 MOBILE POWER SYSTEM
A mobile power plant comprising a retractable flexible solar array structure comprising a plurality of thin film photovoltaic modules mounted on a flexible...
2018/0212086 SOLAR CELL
The present invention aims to provide a solar cell having high photoelectric conversion efficiency and excellent high-temperature, high-humidity durability....
2018/0212085 SEMICONDUCTOR DEVICES, A FLUID SENSOR AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a...
2018/0212084 POROUS SILICON NANOWIRE PHOTOVOLTAIC CELL
The porous silicon nanowire photovoltaic cell includes a first electrode, a p-type silicon layer, and a second electrode, which is formed from a transparent...
2018/0212083 HETEROJUNCTION SOLAR CELL AND MANUFACTURING METHOD THEREOF
Discussed is a method of manufacturing a heterojunction solar cell, including: forming a metal compound on a semiconductor substrate; forming a transparent...
2018/0212082 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
Disclosed in a solar cell including: a semiconductor substrate; a first conductive region for extracting a first carrier on the semiconductor substrate; a...
2018/0212081 SOLAR CELL AND SOLAR CELL PANEL INCLUDING THE SAME
A solar cell includes a semiconductor substrate, a conductive region disposed in or on the semiconductor substrate, and an electrode comprising a plurality of...
2018/0212080 In-Plane Resonant-Cavity Infrared Photodetectors with Fully-Depleted Absorbers
Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments,...
2018/0212079 ENERGY HARVESTING SYSTEMS FOR PROVIDING AUTONOMOUS ELECTRICAL POWER TO BUILDING STRUCTURES AND...
A system is provided that integrates an autonomous energy harvesting capacity in buildings in an aesthetically neutral manner. A unique set of structural...
2018/0212078 ENERGY HARVESTING SYSTEMS FOR PROVIDING AUTONOMOUS ELECTRICAL POWER TO VEHICLES AND ELECTRICALLY-POWERED...
A system is provided that integrates an autonomous energy harvesting capacity in vehicles in an aesthetically neutral manner. A unique set of structural...
2018/0212077 PHOTOACTIVE DEVICES AND MATERIALS
Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting...
2018/0212076 ARTICLES, COATING COMPOSITIONS, AND METHODS
There is provided a coating composition comprising nonspherical nanoparticles; spherical nanoparticles; optionally hydrophilic groups and optional an...
2018/0212075 Polarized light based solar cell
A solar cell is provided wherein a circular polarizer is positioned proximate an absorptive semiconductor layer which itself is separated from an electrode,...
2018/0212074 POLYMER CONTAINING 1,2,5-BENZOSELENADIAZOLE-N-R1-5,6-DICARBOXYLIC ACID IMIDE AND PREPARATION METHOD AND USE THEREOF
The present invention discloses a polymer containing 1,2,5-benzoselenadiazole-N--R.sub.1-5,6-dicarboxylic acid imide, and a preparation method and use thereof....
2018/0212072 MANUFACTURING METHOD FOR SOLAR CELL AND SOLAR CELL
In a manufacturing method for a solar cell, the solar cell includes: a solar cell substrate; and first and second collection electrodes formed on the solar...
2018/0212071 JUNCTION BARRIER SCHOTTKY DIODE WITH ENHANCED SURGE CURRENT CAPABILITY
A semiconductor power rectifier with increased surge current capability is described, which has a semiconductor layer having a first main side and a second...
2018/0212070 SCHOTTKY DIODE
A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second...
2018/0212069 SCHOTTKY DIODE AND METHOD FOR MAKING THE SAME
A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the...
2018/0212068 THIN FILM TRANSISTOR
A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is...
2018/0212067 SEMICONDUCTOR DEVICE
A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper...
2018/0212066 METHOD OF FABRICATING ELECTROSTATICALLY ENHANCED FINS AND STACKED NANOWIRE FIELD EFFECT TRANSISTORS
Non-planar semiconductor devices including semiconductor fins or stacked semiconductor nanowires that are electrostatically enhanced are provided. The...
2018/0212065 Thin Film Transistor And Method Of Manufacturing Thin Film Transistor
Provided are a thin film transistor having properties properly adjusted by adjusting crystallinity of a polycrystalline silicon, and a method of manufacturing...
2018/0212064 LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
Disclosed is a liquid crystal display panel and a method for manufacturing the same. The panel includes a thin-film transistor. An active layer in...
2018/0212063 LOW TEMPERATURE POLYSILICON ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
Disclosed is a low temperature polysilicon array substrate and its manufacturing method. The method includes: forming a light-shielding layer, a buffer layer...
2018/0212062 COPLANAR DOUBLE GATE ELECTRODE OXIDE THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREOF
The present disclosure relates to a coplanar double gate electrode oxide thin film transistor, includes a substrate, a bottom gate electrode, a first gate...
2018/0212061 DUAL GATE OXIDE THIN-FILM TRANSISTOR AND MANUFACTURING METHOD FOR THE SAME
A dual gate oxide thin-film transistor and manufacturing method for the same. The thin-film transistor comprises: a substrate; a bottom gate electrode formed...
2018/0212060 ELECTRONIC DEVICE INCLUDING LIGHT DETECTION DEVICE AND OPERATION METHOD THEREOF
An electronic device is disclosed and includes a housing; a display that is exposed through one surface of the housing; a light emitting unit that is disposed...
2018/0212059 THIN FILM TRANSISTOR, DISPLAY APPARATUS HAVING THE SAME, AND FABRICATING METHOD THEREOF
The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a channel region, a source...
2018/0212058 COMPACT OTP/MTP TECHNOLOGY
Methods of forming a compact FinFET OTP/MTP cell and a compact FDSOI OTP/MTP cell and resulting devices are provided. Embodiments include providing a substrate...
2018/0212057 DEEP EPI ENABLED BY BACKSIDE REVEAL FOR STRESS ENHANCEMENT & CONTACT
Embodiments of the invention include a non-planar transistor with a strained channel and methods of forming such a transistor. In an embodiment, the non-planar...
2018/0212056 STRAINED SEMICONDUCTOR-ON-INSULATOR BY DEFORMATION OF BURIED INSULATOR INDUCED BY BURIED STRESSOR
Etching trench isolation structures into a semiconductor structure that includes an upper thin semiconductor layer disposed over a buried insulator layer and a...
2018/0212055 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
A semiconductor device and a method of forming the same are provided. A substrate is provided. A trench is formed in the substrate and a conductive material is...
2018/0212054 VERTICAL TRANSISTOR WITH ENHANCED DRIVE CURRENT
A stacked vertical field effect transistor that has enhanced drive current is provided. The stacked vertical field effect transistor includes a lower...
2018/0212053 LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE AND MANUFACTURE THEREOF
A Lateral Diffusion Metal Oxide Semiconductor (LDMOS) device and its manufacturing method are presented. The LDMOS device comprises a first region that has a...
2018/0212052 POWER CHIP AND STRUCTURE OF TRANSISTOR
A power chip and a transistor structure thereof are provided. The transistor structure includes a semiconductor substrate, a plurality of gate structures, a...
2018/0212051 CONDUCTIVE LAYER STRUCTURES FOR SUBSTRATES
An example substrate includes a surface, a plurality of thin film layers disposed on the surface, and a conductive layer disposed on the surface. The...
2018/0212050 THIN FILM TRANSISTOR, GATE DRIVE ON ARRAY AND DISPLAY APPARATUS HAVING THE SAME, AND FABRICATING METHOD THEREOF
The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a first semiconductor region,...
2018/0212049 INTEGRATED CIRCUIT AND CODE GENERATING METHOD
An integrated circuit and a code generating method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of...
2018/0212048 TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IMMUNITY
A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a...
2018/0212047 GROUP III-V DEVICE STRUCTURE
A group III-V device structure is provided. The group III-V device structure includes a channel layer formed over a substrate and an active layer formed over...
2018/0212046 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second...
2018/0212045 CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO INTERNAL REGROWTH INTERFACES
A precursor cell for a transistor having a foundation structure, a mask structure, and a gallium nitride (GaN) PN structure is provided. The mask structure is...
2018/0212044 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device includes forming a gate stack over a semiconductor fin such that the gate stack exposes the semiconductor...
2018/0212043 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
Disclosed is a method for manufacturing a thin film transistor. The method includes steps of etching a second metal layer and a semiconductor layer to form a...
2018/0212042 LDMOS POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Methods are directed to forming an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and...
2018/0212041 DEVICES AND METHODS FOR A POWER TRANSISTOR HAVING A SCHOTTKY OR SCHOTTKY-LIKE CONTACT
Devices, structures, and methods thereof for providing a Schottky or Schottky-like contact as a source region and/or a drain region of a power transistor are...
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