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Patent # Description
2018/0212040 APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN FIELD EFFECT TRANSISTOR DEVICES
A method of forming a vertical fin field effect transistor device, including, forming one or more vertical fins with a hardmask cap on each vertical fin on a...
2018/0212039 SELF-LIMITED INNER SPACER FORMATION FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
Methods of forming a semiconductor device include forming a layer of activating material on sidewalls of a stack of alternating layers of channel material and...
2018/0212038 SELF-LIMITED INNER SPACER FORMATION FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
A semiconductor devices and methods of forming the same include forming a layer of activating material on sidewalls of a stack of alternating layers of channel...
2018/0212037 APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN FIELD EFFECT TRANSISTOR DEVICES
A method of forming a vertical fin field effect transistor device, including, forming one or more vertical fins with a hardmask cap on each vertical fin on a...
2018/0212036 Polysilicon Design for Replacement Gate Technology
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed...
2018/0212035 Integrated strained stacked nanosheet FET
Methods of forming a semiconductor device include forming stress liners in contact with both ends of a fin of alternating channel material and sacrificial...
2018/0212034 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A COBALT SILICIDE FILM
A method for manufacturing a semiconductor device with a cobalt silicide film is provided in the present invention. The method includes the steps of providing...
2018/0212033 THIN FILM TRANSISTOR
A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and...
2018/0212032 CONDUCTIVE LAYER, THIN FILM TRANSISTOR AND MANUFACTURING METHODS THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present disclosure relates to a conductive layer, a thin film transistor and manufacturing methods therefor, an array substrate and a display device, in...
2018/0212031 Semiconductor Device Having Silicide Layers
A semiconductor device includes a semiconductor substrate having a first side, and a trench structure having a bottom and a sidewall. The bottom has at least...
2018/0212030 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
A semiconductor device and a method of forming the same are disclosed. First, a substrate having a main surface is provided. At least a trench is formed in the...
2018/0212029 SEMICONDUCTOR DEVICES EMPLOYING REDUCED AREA CONFORMAL CONTACTS TO REDUCE PARASITIC CAPACITANCE, AND RELATED...
Semiconductor devices employing reduced area conformal contacts for reducing parasitic capacitance and improving performance, and related methods are...
2018/0212028 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection...
2018/0212027 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device can include: a substrate having a semiconductor material; a plurality of semiconductor layers of a first conductivity type, and being...
2018/0212026 SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING
New compositions of matter and device constructs are disclosed in the form of diamond material layers or films having one or more surfaces treated with...
2018/0212025 III-N Based Substrate for Power Electronic Devices and Method for Manufacturing Same
The present disclosure relates to a III-N based substrate for power electronic devices, comprising a base substrate, a III-N laminate above the base substrate...
2018/0212024 STACKED NANOWIRE DEVICE WIDTH ADJUSTMENT BY GAS CLUSTER ION BEAM (GCIB)
A method of making a nanowire device includes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a...
2018/0212023 HYBRID TRIGATE AND NANOWIRE CMOS DEVICE ARCHITECTURE
Hybrid trigate and nanowire CMOS device architecture, and methods of fabricating hybrid trigate and nanowire CMOS device architecture, are described. For...
2018/0212022 INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE
This invention discloses a method for manufacturing a semiconductor power device in a semiconductor substrate comprises an active cell area and a termination...
2018/0212021 HIGH-VOLTAGE SUPERJUNCTION FIELD EFFECT TRANSISTOR
In at least some embodiments, a semiconductor device structure comprises a first surface comprising a source and a gate; a second surface comprising a drain; a...
2018/0212020 LEVEL SHIFTER AND SEMICONDUCTOR DEVICE
A level shifter is provided. The level shifter is located between a high-side circuit area and a low-side circuit area and includes a substrate, a buried...
2018/0212019 CONFORMAL CAPACITOR STRUCTURE FORMED BY A SINGLE PROCESS
A capacitor structure is provided that includes conformal layers of a lower electrode, a high-k metal oxide dielectric, and an upper electrode. The capacitor...
2018/0212018 LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS
Capacitors and methods of forming the same include forming an oxygenated dielectric layer on a first conductive layer. A second conductive layer is formed on...
2018/0212017 NANOSHEET CAPACITOR
A capacitive device includes a first electrode comprising a nanosheet stack, and a second electrode comprising a nanosheet stack, the second electrode arranged...
2018/0212016 DISPLAY DEVICE INCLUDING AN EMISSION LAYER
A display device includes a scan line extending in a first direction. A plurality of data lines cross the scan line. A driving voltage line crosses the scan...
2018/0212015 DISPLAY PANEL AND DISPLAY DEVICE
Disclosed are a display panel and a display device. The display panel includes an active area and two GOA driving circuit areas which are respectively arranged...
2018/0212014 DISPLAY DEVICE INCLUDING AN EMISSION LAYER
A display device includes pixels, scan lines, and data lines. A first driving gate electrode is disposed at a first pixel of the display device. A second...
2018/0212013 DOUBLE-SIDED OLED DISPLAY DEVICE
A double-sided OLED display device is provided. The double-sided OLED display device has a first display element, a second display element, a first sealing...
2018/0212012 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
An organic light emitting diode display includes: a substrate; a scan line formed over the substrate and transmitting a scan signal; a data line crossing the...
2018/0212011 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
The present disclosure provides an array substrate, its manufacturing method, and a display apparatus. The array substrate includes a monocrystalline silicon...
2018/0212010 ARRAY SUBSTRATE OF OLED DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A manufacturing method of an array substrate of an OLED display device is provided. Active areas of a first thin film transistor T1 and a second thin film...
2018/0212009 DISPLAY DEVICE
A display device in an embodiment according to the present invention includes a display region above a first substrate, the display region includes, a...
2018/0212008 TOP-EMITTING OLED DISPLAY UNIT, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL
Disclosed are a top-emitting OLED display unit, a method for manufacturing the same, and a display panel. The top-emitting OLED display unit includes a first...
2018/0212007 ORGANIC LIGHT EMITTING DISPLAY APPARATUS
An organic light emitting display apparatus includes a substrate; an anode electrode on the substrate; an auxiliary electrode on the substrate; an organic...
2018/0212006 Light Emitting Device and Electronic Device
Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are fowled over flexible...
2018/0212005 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device includes a substrate; an anode electrode on the substrate; an auxiliary electrode on the substrate in a same layer as...
2018/0212004 DISPLAY DEVICE
A display device capable of suppressing rapid degradation of a lifespan. The display device (1) includes a light emitting region 2 and a non-light emitting...
2018/0212003 Organic Electronic Component
An organic electronic component and a method for making an organic electronic component are disclosed. In an embodiment the component includes an anode, an...
2018/0212002 METHOD FOR MANUFACTURING DISPLAY SUBSTRATE, DISPLAY SUBSTRATE AND DISPLAY DEVICE
The present disclosure discloses a method for manufacturing a display substrate, a display substrate and a display device. The method includes forming an...
2018/0212001 PIXEL STRUCTURE, FABRICATION METHOD THEREOF, DISPLAY PANEL, AND DISPLAY APPARATUS
The present disclosure provides a pixel structure and a fabricating method thereof, as well as a display panel and a display apparatus. The pixel structure...
2018/0212000 DISPLAY DEVICE
A display device includes plural unit areas each of which includes low definition pixels as sub-pixels larger than a specified standard and high definition...
2018/0211999 PIXEL ARRANGEMENT STRUCTURE AND A DISPLAY APPARATUS
The present application discloses a pixel arrangement structure and a display apparatus, the pixel arrangement structure includes a plurality of pixel units,...
2018/0211998 BUILT-IN TOUCH DISPLAY PANELS BASING ON ORGANIC LIGHT EMITTING DEVICES (OLEDS)
The present disclosure relates to a built-in touch display panel basing on OLED includes: a thin film transistor (TFT) layer, an anode layer, an OLED layer,...
2018/0211997 STRUCTURE OF RANDOM ACCESS MEMORY
A structure of random access memory includes a memory cell and a selector. The memory cell has two different conductive states according to a bias applied on...
2018/0211996 SEMICONDUCTOR APPARATUS INCLUDING MAGNETORESISTIVE DEVICE
A semiconductor apparatus includes a substrate, a first insulating layer on a logic region and a memory region of the substrate, a second insulating layer on...
2018/0211995 SEMICONDUCTOR MEMORY DEVICE
A lower dielectric layer is disposed on a semiconductor substrate. A plurality of peripheral lower wirings are disposed on a peripheral region of the...
2018/0211994 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
An electronic device including a semiconductor memory is provided. The semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a...
2018/0211993 LIGHT EMITTING DEVICE PACKAGE AND DISPLAY DEVICE USING THE SAME
A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units...
2018/0211992 SOLUTION DEPOSITED MAGNETICALLY GUIDED CHIPLET DISPLACEMENT
Magnetic regions of at least one of a chiplet or a receiving substrate are used to permit magnetically guided precision placement of a plurality of chiplets on...
2018/0211991 LIGHT EMITTING DIODE DISPLAY AND FABRICATING METHOD THEREOF
A light emitting diode display including at least one light emitting diode chip is provided. The light emitting diode chip includes a first substrate, a...
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