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Patent # Description
2018/0219102 SEMICONDUCTOR DEVICE
The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first...
2018/0219101 VERTICALLY ALIGNED NANOWIRE CHANNELS WITH SOURCE/DRAIN INTERCONNECTS FOR NANOSHEET TRANSISTORS
A nano-sheet semiconductor structure and a method for fabricating the same. The nano-sheet structure includes a substrate and at least one alternating stack of...
2018/0219100 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY PANEL HAVING THE SAME, AND FABRICATING METHOD THEREOF
The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion...
2018/0219099 CRYSTALLIZATION METHOD FOR OXIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME, AND...
A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising...
2018/0219098 CRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING CRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, AND...
A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.
2018/0219097 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device (101) includes: an oxide semiconductor layer (5) supported on a substrate (1), the oxide semiconductor layer (5) having a first...
2018/0219096 SEMICONDUCTOR STRUCTURE INCLUDING LOW-K SPACER MATERIAL
A semiconductor structure includes a substrate, and a replacement metal gate (RMG) structure is attached to the substrate. The RMG structure includes a lower...
2018/0219095 Novel Fin Structure of FinFET
A fin structure disposed over a substrate and a method of forming a fin structure are disclosed. The fin structure includes a mesa, a channel disposed over the...
2018/0219094 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type,...
2018/0219093 METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN
The present disclosure, in some embodiments, relates to a transistor device having a field plate. The transistor device has a gate electrode disposed over a...
2018/0219092 SEMICONDUCTOR DEVICE
A semiconductor device includes a first conductivity type semiconductor layer including an active cell portion and an outer peripheral portion around the...
2018/0219091 INTEGRATED CIRCUIT AND CODE GENERATING METHOD
An integrated circuit and a code generating method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of...
2018/0219090 WRAP-AROUND SOURCE/DRAIN METHOD OF MAKING CONTACTS FOR BACKSIDE METALS
An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an...
2018/0219089 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A mesa portion of a semiconductor device, which includes a channel base layer formed of a first nitride semiconductor layer, a channel layer formed of a second...
2018/0219088 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a trench and exposing a portion of...
2018/0219087 III-N EPITAXIAL DEVICE STRUCTURES ON FREE STANDING SILICON MESAS
III-N semiconductor heterostructures on III-N epitaxial islands laterally overgrown from a mesa of a silicon substrate. An IC may include a III-N semiconductor...
2018/0219086 NITRIDE SEMICONDUCTOR DEVICE
A nitride semiconductor device includes a horizontal switching device that includes a substrate, a channel forming layer, a source region, a drain region and a...
2018/0219085 SEMICONDUCTOR DEVICE HAVING MULTIPLE FIELD STOP LAYERS
A semiconductor device of the present invention is structured such that in a surface layer of a first principal surface of a semiconductor substrate, an n-type...
2018/0219084 METHOD FOR VERTICAL GATE-LAST PROCESS
A method for fabrication of vertical nanowire MOSFETs is considered using a gate-last process. The top ohmic electrode is first fabricated and may be used as a...
2018/0219083 NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS
A method of forming a nanosheet device, including forming a channel stack on a substrate, where the channel stack includes at least one nanosheet channel layer...
2018/0219082 NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS
A method of forming a nanosheet device, including forming a channel stack on a substrate, where the channel stack includes at least one nanosheet channel layer...
2018/0219081 GATE HEIGHT CONTROL AND ILD PROTECTION
Embodiments are directed to methods of forming a semiconductor device and resulting structures for improving gate height control and providing interlayer...
2018/0219080 SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES
Techniques related to forming selective gate spacers for semiconductor devices and transistor structures and devices formed using such techniques are...
2018/0219079 SPACERS FOR TIGHT GATE PITCHES IN FIELD EFFECT TRANSISTORS
Structures for spacers of a field-effect transistor and methods for forming such spacers. A mask layer has a feature separated from a vertical sidewall of a...
2018/0219078 Contacts for Highly Scaled Transistors
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain(S/D)...
2018/0219077 Wrap-Around Contact on FinFET
A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the...
2018/0219076 METHODS FOR FORMING WRAP AROUND CONTACT
In some embodiments, a semiconductor device is provided. The semiconductor device includes a first semiconductor fin that extends from a substrate. The first...
2018/0219075 BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES OF DEVICES
An apparatus including a circuit structure including a device stratum including a plurality of devices including a first side and an opposite second side; and...
2018/0219074 ELECTRONIC DEVICE
A transistor structure is configured as a vertical type transistor. The transistor structure has a patterned electrode located between a gate electrode and a...
2018/0219073 TFT ARRAY SUBSTRATE, MANUFACTURING METHOD, AND DISPLAY APPARATUS THEREOF
A TFT array substrate, a manufacturing method, and a display apparatus thereof are provided. The TFT array substrate includes a glass substrate, a buffer...
2018/0219072 GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate
A vertical JFET is provided. The JFET is mixed with lateral channel structure and p-GaN gate structure. The JFET has a N+ implant source region. In one...
2018/0219071 GaN Lateral Vertical HJFET with Source-P Block Contact
A vertical JFET is provided. The JFET is mixed with lateral channel structure and p-GaN gate structure. The JFET has an improved barrier layer for p-GaN block...
2018/0219069 SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, SILICON CARBIDE SINGLE CRYSTAL EPITAXIAL...
A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector...
2018/0219068 SEMICONDUCTOR DEVICE
A semiconductor device including a semiconductor substrate having an edge termination portion and an active portion is provided. The edge termination portion...
2018/0219067 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained...
2018/0219066 INTEGRATED CAPACITORS WITH NANOSHEET TRANSISTORS
A semiconductor device and process of making the same generally includes simultaneously forming nanosheet capacitors with nanosheet FET devices on the same...
2018/0219065 Insulation Structure Including a Gas Filled Cavity
A method and a semiconductor device are disclosed. The method includes forming an etch mask on top of a surface of an edge region of a semiconductor body, the...
2018/0219064 STACKED NANOSHEET FIELD EFFECT TRANSISTOR DEVICE WITH SUBSTRATE ISOLATION
Nanosheet FET devices having substrate isolation layers are provided, as well as methods for fabricating nanosheet FET devices with substrate isolation layers....
2018/0219063 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device and a method of fabricating the same are provide. The fabricating method includes providing a silicon-on-insulator (SOI) substrate that...
2018/0219062 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device, including implanting hydrogen atoms from a second principal surface of a semiconductor substrate, forming a...
2018/0219061 Operation of Double-Base Bipolar Transistors with Additional Timing Phases at Switching Transitions
Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each...
2018/0219060 METAL RESISTORS HAVING NITRIDIZED METAL SURFACE LAYERS WITH DIFFERENT NITROGEN CONTENT
A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The...
2018/0219059 MAGNETIC THIN FILM INDUCTOR STRUCTURES
Various magnetic thin film inductor structures are disclosed that include one or more magnetic thin film (MTF) materials. During operation, an electric field...
2018/0219058 ORGANIC LIGHT-EMITTING DISPLAY PANEL AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE
Disclosed are an organic light-emitting display panel and an organic light-emitting display device. The organic light-emitting display panel includes a display...
2018/0219057 AMOLED DISPLAY DEVICE AND ARRAY SUBSTRATE THEREOF
An AMOLED display device and an array substrate thereof are disclosed. The array substrate of the AMOLED display device includes a baseplate, a surface-shaped...
2018/0219056 AMOLED DISPLAY DEVICE
The present invention provides an AMOLED display device, which includes a cathode connection layer formed on a backing plate and provides connection between...
2018/0219055 FLEXIBLE VERTICAL CHANNEL ORGANIC THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREOF
Provided is a flexible vertical channel organic thin film transistor and a manufacture method thereof, which change the traditional configuration of the...
2018/0219054 AMOLED DEVICE AND MANUFACTURING METHOD THEREOF
The present invention provides an AMOLED device and a manufacturing method thereof. The manufacturing method of the AMOLED device according to the present...
2018/0219053 Organic Light Emitting Diode Display Device
Disclosed is an organic light emitting diode (OLED) display device including a substrate including a pixel region and a boundary region outside the pixel...
2018/0219052 DISPLAY SYSTEM FOR A VEHICLE
The disclosures relates to a display system for a vehicle that includes a screen with two unique and opposite curved portions, integrally provided with each...
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