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Patent # Description
2018/0233365 PLASMA ASSISTED DOPING ON GERMANIUM
A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes...
2018/0233364 DEPOSITION APPARATUS
A deposition apparatus including a crucible to receive the deposition material and in which a deposition material is evaporated; a linear deposition source...
2018/0233363 METHOD TO IMPROVE ADHESION OF PHOTORESIST ON SILICON SUBSTRATE FOR EXTREME ULTRAVIOLET AND ELECTRON BEAM...
An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based...
2018/0233362 METHOD TO IMPROVE ADHESION OF PHOTORESIST ON SILICON SUBSTRATE FOR EXTREME ULTRAVIOLET AND ELECTRON BEAM...
An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based...
2018/0233361 DUMMY PATTERN ADDITION TO IMPROVE CD UNIFORMITY
A multiple exposure patterning process includes the incorporation of a dummy feature into the integration flow. The dummy feature, which is placed to overlie...
2018/0233360 REMOVAL OF TRILAYER RESIST WITHOUT DAMAGE TO UNDERLYING STRUCTURE
A method for semiconductor processing includes forming a trilayer resist structure having a middle layer disposed between a top layer and a bottom layer. The...
2018/0233359 SELF-ALIGNED NANODOTS FOR 3D NAND FLASH MEMORY
A method of forming a 3D NAND structure having self-aligned nanodots includes depositing alternating layers of an oxide and a nitride on a substrate; at least...
2018/0233358 METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR ELEMENT
In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by...
2018/0233357 DIRECTIONAL DEPOSITION ON PATTERNED STRUCTURES
Provided herein are methods and related apparatus that facilitate patterning by performing highly non-conformal (directional) deposition on patterned...
2018/0233356 HIGH DEPOSITION RATE AND HIGH QUALITY NITRIDE
In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing...
2018/0233355 Alkyl-Alkoxysilacyclic Compounds And Methods For Depositing Films Using Same
A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of:...
2018/0233354 METHOD FOR PRODUCING SIC EPITAXIAL WAFER AND APPARATUS FOR PRODUCING SIC EPITAXIAL WAFER
A method for producing a SiC epitaxial wafer using an apparatus including a mounting plate having a recessed accommodation portion and a satellite disposed in...
2018/0233353 METHOD TO INCREASE THE LITHOGRAPHIC PROCESS WINDOW OF EXTREME ULTRA VIOLET NEGATIVE TONE DEVELOPMENT RESISTS
A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming...
2018/0233352 METHOD TO INCREASE THE LITHOGRAPHIC PROCESS WINDOW OF EXTREME ULTRA VIOLET NEGATIVE TONE DEVELOPMENT RESISTS
A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming...
2018/0233350 SELECTIVE PASSIVATION AND SELECTIVE DEPOSITION
Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a...
2018/0233349 SELECTIVE DEPOSITION OF SILICON OXIDE
Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods...
2018/0233348 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
There is provided a method of manufacturing a semiconductor device which includes: supplying a process gas to a process chamber in a state in which a substrate...
2018/0233347 COMBINED WAFER PRODUCTION METHOD WITH A MULTI-COMPONENT RECEIVING LAYER
The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body...
2018/0233346 MASS SPECTROMETER USING GASTIGHT RADIO FREQUENCY ION GUIDE
The disclosure relates to a mass spectrometer, comprising (a) a vacuum recipient containing ion handling elements of the mass spectrometer, the vacuum...
2018/0233345 Diathermy Knife Ionisation Source
A method of detecting one or more compounds, chemicals or contaminants in a substrate by mass spectrometry is disclosed. A non-living substrate is analysed by...
2018/0233344 Ionization Method Selection Assisting Apparatus and Method
An ionization method selection assisting image includes a coefficient axis indicating the magnitude of a partition coefficient, a plurality of method...
2018/0233343 Microengineered Skimmer Cone For A Miniature Mass Spectrometer
A method for forming a miniature skimmer cone for a free jet expansion vacuum interface is disclosed. The skimmer cone is formed from electroplated metal,...
2018/0233342 ATMOSPHERIC PRESSURE ION GUIDE
Atmospheric pressure ion guides are provided. The atmospheric pressure ion guides can include a multi-ring electrode structure connecting a larger opening to a...
2018/0233341 Analyzing a Complex Sample by MS/MS Using Isotopically-Labeled Standards
A method and corresponding apparatus are disclosed for analysis of a peptide-containing sample. The sample is prepared by adding isotopically-labeled peptides...
2018/0233340 METHODS FOR MICROBIOLOGICAL IDENTIFICATION BY MASS SPECTROMETRY
Methods and systems for identification of microorganisms either after isolation from a culture or directly from a sample. The methods and systems are...
2018/0233339 DIGITAL ELECTRON AMPLIFIER WITH ANODE READOUT DEVICES AND METHODS OF FABRICATION
Scalable electron amplifier devices and methods of fabricating the devices an atomic layer deposition ("ALD") fabrication process are described. The ALD...
2018/0233338 Forming Ion Pump Having Silicon Manifold
An ultra-high vacuum (UHV) system includes a UHV cell and an ion pump to maintain the UHV in the UHV cell. The ion pump has a GCC (glass, ceramic, or...
2018/0233337 Cold-Matter System Having Integrated Pressure Regulator
A cold-atom cell is formed by machining a block of silicon to define sites for an atom source chamber, an atom manipulation chamber, and an ion-pump chamber. A...
2018/0233336 PROCESSING APPARATUS AND COLLIMATOR
A processing apparatus according to an embodiment includes a container, a workpiece placement unit, a collimator, and a magnetic field generation unit. The...
2018/0233335 PROCESSING DEVICE AND COLLIMATOR
A processing device according to one embodiment includes an object placement unit, a source placement unit, and a collimator. An object is placed on the object...
2018/0233334 ADJUSTABLE EXTENDED ELECTRODE FOR EDGE UNIFORMITY CONTROL
Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber...
2018/0233333 TOROIDAL PLASMA ABATEMENT APPARATUS AND METHOD
An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one...
2018/0233332 ELEMENTARY DEVICE FOR APPLYING A MICROWAVE ENERGY WITH A COAXIAL APPLICATOR
An elementary device of the present disclosure includes a coaxial applicator that includes a connector disposed at a distal end of the applicator, a shielding,...
2018/0233331 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by...
2018/0233330 VARIABLE POWER CAPACITOR FOR RF POWER APPLICATIONS
A power capacitor (7) is described for use in an RF power delivery system. The power capacitor comprises at least two RF electrodes (18, 19) separated by a...
2018/0233329 PLASMA ETCHING METHOD
In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the...
2018/0233328 VACUUM PROCESSING APPARATUS AND MAINTENANCE APPARATUS
A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum...
2018/0233327 APPARATUS WITH CONCENTRIC PUMPING FOR MULTIPLE PRESSURE REGIMES
An exhaust module for a substrate processing apparatus having a body, a pumping ring, and a symmetric flow valve, is disclosed herein. The body has a first and...
2018/0233326 Temperature Controlled Spacer For Use In A Substrate Processing Chamber
A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an...
2018/0233325 ALE SMOOTHNESS: IN AND OUTSIDE SEMICONDUCTOR INDUSTRY
Methods of etching and smoothening films by exposing to a halogen-containing plasma and an inert plasma within a bias window in cycles are provided. Methods...
2018/0233324 CHARGED PARTICLE BEAM WRITING METHOD
In one embodiment, a charged particle beam writing method includes writing a first pattern statically in central part of a first substrate having Charge...
2018/0233323 SYSTEMS AND METHODS FOR AUTOMATED MICROSCOPY
A method of locating a substrate within a field of view of an imaging system includes acquiring an image of a first marker on a substrate in the field of view....
2018/0233322 EMISSION NOISE CORRECTION OF A CHARGED PARTICLE SOURCE
A method of operating a charged particle microscope comprising the following steps: Providing a specimen on a specimen holder; Using a source to produce a...
2018/0233321 ION DIRECTIONALITY ESC
A substrate support for supporting a substrate within a semiconductor processing chamber is provided. A substrate support body is provided. At least one...
2018/0233320 Charged Particle Beam Device
A purpose of the present invention is to provide a charged particle beam device that suppresses an off-axis amount when a field of view moves, said move...
2018/0233319 FOCUSED ION BEAM APPARATUS
The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion...
2018/0233318 Multi-Column Spacing for Photomask and Reticle Inspection and Wafer Print Check Verification
A multi-column assembly for a scanning electron microscopy (SEM) system is disclosed. The multi-column assembly includes a plurality of electron-optical...
2018/0233317 APPARATUS CONFIGURED FOR ENHANCED VACUUM ULTRAVIOLET (VUV) SPECTRAL RADIANT FLUX AND SYSTEM HAVING THE APPARATUS
A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of...
2018/0233316 ELECTRON BEAM PROJECTOR WITH LINEAR THERMAL CATHODE
An electron beam projector with a linear thermal cathode (7) for electron beam heating consists of a beam guide (1) which comprises a deflecting ...
2018/0233315 FAULT STATE INDICATION DEVICE FOR CIRCUIT BREAKER
A fault state indication device for a circuit breaker, comprising a contact group, a transmission assembly and an indication assembly which are mounted inside...
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