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Patent # Description
2018/0308884 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
The performances of a semiconductor device are improved. A semiconductor device has a transfer transistor and a photodiode. The photodiode has an n type...
2018/0308883 IMAGE PICK-UP APPARATUS
Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a...
2018/0308882 LIGHT ABSORPTION APPARATUS
A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light...
2018/0308881 SINGLE-PHOTON AVALANCHE DIODE IMAGE SENSOR WITH PHOTON COUNTING AND TIME-OF-FLIGHT DETECTION CAPABILITIES
A back side illuminated image sensor may operate using the single-photon avalanche diode (SPAD) concept in a Geiger mode of operation for single photon...
2018/0308880 MASK FOR MANUFACTURING TFT IN 4M PRODUCTION PROCESS AND TFT ARRAY MANUFACTURING METHOD OF 4M PRODUCTION PROCESS
The present invention provides a mask for manufacturing a TFT in a 4M production process and a TFT array manufacturing method of a 4M production process. For...
2018/0308879 TFT ARRAY MANUFACTURING METHOD OF OPTIMIZED 4M PRODUCTION PROCESS
The present invention provides a TFT array manufacturing method of an optimized 4M production process. The method includes: Step 10, in a first mask-based...
2018/0308878 LTPS LAYER, METHOD FOR FABRICATING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE
A method for fabricating a LTPS layer, a LTPS layer, a display substrate, and a display device are disclosed. The method includes providing a substrate which...
2018/0308877 FLEXIBLE PANEL AND METHOD FOR MANUFACTURING THE SAME
A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an...
2018/0308876 ACTIVE SWITCH ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY PANEL USING THE SAME
This application relates to an active switch array substrate, a manufacturing method therefor, and a display panel using same. The active switch array...
2018/0308875 Array Substrate, Manufacturing Method Thereof, Display Panel and Display Device
An array substrate, a manufacturing method thereof, a display panel and a display device are provided. The array substrate includes a base substrate, and a...
2018/0308874 DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of...
2018/0308873 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
A thin film transistor comprises a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode. The drain electrode comprises a...
2018/0308872 FLEXIBLE DISPLAY SUBSTRATE AND DISPLAY DEVICE
A flexible display substrate and a display device are disclosed. The flexible display substrate includes a plurality of signal lines located in a display area;...
2018/0308871 ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, DISPLAY PANEL
An array substrate, a display panel, and a fabrication method of the array-substrate are provided. The array substrate comprises a first thin film transistor...
2018/0308870 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME
Provided is a semiconductor device including: a first transistor over a substrate, the first transistor having a gate electrode, an oxide semiconductor film,...
2018/0308869 DISPLAY DEVICE
The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes...
2018/0308868 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
The present invention provides a manufacturing method of an array substrate and an array substrate. The manufacturing method of the array substrate according...
2018/0308867 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD
A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a...
2018/0308866 Display Device
Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected...
2018/0308865 Fan-Out Circuit Structure and Display Panel
A fan-out circuit structure, a display panel, and a display device are provided. The fan-out circuit structure includes: a first metal layer, a second metal...
2018/0308864 TFT SUBSTRATE MANUFACTURING METHOD AND TFT SUBSTRATE
The present invention provides a TFT substrate manufacturing method and a TFT substrate. In the TFT substrate manufacturing method of the present invention, a...
2018/0308863 ARRAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY APPARATUS
An array substrate includes: a plurality of pixels including sub-pixels forming a matrix, each sub-pixel including a pair of sub-pixel portions; a plurality of...
2018/0308862 RADIO-FREQUENCY SWITCHES HAVING SILICON-ON-INSULATOR FIELD-EFFECT TRANSISTORS WITH REDUCED LINEAR REGION RESISTANCE
Disclosed are devices and methods related to radio-frequency (RF) switches having silicon-on-insulator (SOI) field-effect transistors (FETs). In some...
2018/0308861 Conductive Components and Memory Assemblies
Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is...
2018/0308860 SEMICONDUCTOR DEVICES INCLUDING STACKED ELECTRODES
Semiconductor devices are provided. A semiconductor device includes first and second stacks of electrodes. Moreover, the semiconductor device includes first...
2018/0308859 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES
A three-dimensional semiconductor device includes gate electrodes sequentially stacked on a substrate, a channel structure penetrating the gate electrodes and...
2018/0308858 Elevationally-Extending String Of Memory Cells And Methods Of Forming An Elevationally-Extending String Of...
A method that is part of a method of forming an elevationally-extending string of memory cells comprises forming an intervening structure that is elevationally...
2018/0308857 NON-VOLATILE MEMORY DEVICES WITH VERTICALLY INTEGRATED CAPACITOR ELECTRODES
Provided is a vertical non-volatile memory device in which a capacitor constituting a peripheral circuit region is formed as a vertical type so that an area...
2018/0308856 SEMICONDUCTOR DEVICE
A stack structure including a plurality of gate electrodes is vertically stacked on a substrate and extends in a first direction. A channel structure includes...
2018/0308855 SEMICONDUCTOR DEVICE
A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a...
2018/0308854 NONVOLATILE MEMORY DEVICE
A nonvolatile memory device can be manufactured without adding any major modification to a structure and component elements of a conventional MOS type silicon...
2018/0308853 Memory Cells and Memory Arrays
Some embodiments include memory cells having four transistors supported by a base, and vertically offset from the base. The four transistors are incorporated...
2018/0308852 Flexible Merge Scheme for Source/Drain Epitaxy Regions
A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a...
2018/0308851 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a transistor having a gate, a source and a drain and a metal-insulator-semiconductor (MIS) structure. The transistor and...
2018/0308850 SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, MEMORY CELL HAVING THE...
A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a...
2018/0308849 SEMICONDUCTOR DEVICES
A semiconductor device includes a substrate, a bit line structure on the substrate, a first contact structure on a sidewall of the bit line structure, a second...
2018/0308848 Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to...
2018/0308846 CAPACITOR CELL AND STRUCTURE THEREOF
A capacitor cell is provided. A first PMOS transistor is coupled between a power supply and a first node, having a gate coupled to a second node. A first NMOS...
2018/0308845 PATTERNED GATE DIELECTRICS FOR III-V-BASED CMOS CIRCUITS
Semiconductor devices and methods of making the same include forming a first channel region on a first semiconductor region. A second channel region is formed...
2018/0308844 PATTERNED GATE DIELECTRICS FOR III-V-BASED CMOS CIRCUITS
Semiconductor devices and methods of making the same include forming a first channel region on a first semiconductor region. A second channel region is formed...
2018/0308843 SUPER-SATURATION CURRENT FIELD EFFECT TRANSISTOR AND TRANS-IMPEDANCE MOS DEVICE
The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound...
2018/0308842 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A semiconductor structure includes a substrate, a first gate structure, and a second gate structure. The substrate has a plurality of first fins and a...
2018/0308841 FINFET LDMOS DEVICES WITH ADDITIONAL DYNAMIC CONTROL
A FinFET semiconductor device having semiconductor body including a source region of a first type, and a drain region of a second type, and a drain-region...
2018/0308840 SEMICONDUCTOR DEVICE
A semiconductor device of a circuit is provided. The circuit is configured to be operated under a power supply. The semiconductor device of the circuit...
2018/0308839 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device and a method of manufacturing the same are provided so as to suppress an increase in the forward voltage of a first diode even if a...
2018/0308838 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT...
2018/0308837 RESISTOR FINS
A technique relates to forming resistor fins on a substrate. A shallow trench isolation material is formed on dummy fins and the substrate, and the dummy fins...
2018/0308836 ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD FOR ELECTROSTATIC DISCHARGE
An electrical static discharge (ESD) protection device and a method for ESD are provided. The ESD protection device includes first and second wells and fourth...
2018/0308835 TIGHT INTEGRATED VERTICAL TRANSISTOR DUAL DIODE STRUCTURE FOR ELECTROSTATIC DISCHARGE CIRCUIT PROTECTOR
An electric static discharge (ESD) diode pair is disclosed. The first diode of the device includes a first diode junction portion having vertically orientated...
2018/0308834 MULTILEVEL TEMPLATE ASSISTED WAFER BONDING
Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to...
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