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Patent # Description
2018/0323284 ASYMMETRIC SEMICONDUCTOR DEVICE
A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The...
2018/0323283 CLOSELY PACKED VERTICAL TRANSISTORS WITH REDUCED CONTACT RESISTANCE
A method of forming a semiconductor device and resulting structures having closely packed vertical transistors with reduced contact resistance by forming a...
2018/0323282 POWER DEVICE WITH HIGH ASPECT RATIO TRENCH CONTACTS AND SUBMICRON PITCHES BETWEEN TRENCHES
This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The...
2018/0323281 FORMING A UNIFORM INNER SPACER FOR A VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTOR
A method of forming a vertical transport fin field effect transistor (VT FinFET), including, forming a plurality of vertical fins on a substrate, forming a...
2018/0323280 SELF-ALIGNED SPACER FOR CUT-LAST TRANSISTOR FABRICATION
Semiconductor devices include one or more semiconductor fins. A gate dielectric is formed over the one or more semiconductor fins. A gate is formed over the...
2018/0323279 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor may include a semiconductor substrate including a first region and a second region disposed at opposite sides of the first region, a first...
2018/0323278 INTEGRATION OF STRAINED SILICON GERMANIUM PFET DEVICE AND SILICON NFET DEVICE FOR FINFET STRUCTURES
A method of forming a finFET transistor device includes forming a crystalline, compressive strained silicon germanium (cSiGe) layer over a substrate; masking a...
2018/0323277 FIN-FET DEVICES AND FABRICATION METHODS THEREOF
A method for fabricating a Fin-FET device includes forming a plurality of discrete fin structures on a substrate which includes a first device region and a...
2018/0323276 METHOD FOR FORMING A LOW-K SPACER
The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k...
2018/0323275 STI-DIODE STRUCTURE
A method for manufacturing a fin-type diode includes providing a substrate structure including a substrate, first and second sets of fins on the substrate, an...
2018/0323274 SCHOTTKY CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICES AND METHOD FOR FORMING SUCH SCHOTTKY CONTACT STRUCTURE
A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The...
2018/0323273 DEVICE INCLUDING A SIDEWALL SCHOTTKY INTERFACE
In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a...
2018/0323272 GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
Methods of forming semiconductor devices include forming a lower dielectric layer to a height below a height of a dummy gate hardmask disposed across multiple...
2018/0323271 VERTICAL FIN WITH A GATE STRUCTURE HAVING A MODIFIED GATE GEOMETRY
A method of forming a gate structure with a modified gate geometry, including, forming two gate spacers and a dummy gate fill on a channel, wherein the dummy...
2018/0323270 GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over...
2018/0323269 METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A THINNED FIN IN THE SOURCE/DRAIN REGIONS OF A FINFET DEVICE
One illustrative method disclosed includes, among other things, forming a gate around an initial fin structure and above a layer of insulating material, and...
2018/0323268 TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
A tunable breakdown voltage RF MESFET and/or MOSFET and methods of manufacture are disclosed. The method includes forming a first line and a second line on an...
2018/0323267 NITRIDE SEMICONDUCTOR DEVICE
A nitride semiconductor device includes a silicon substrate. A nitride semiconductor layer is formed over the silicon substrate. A gate electrode is formed...
2018/0323266 SEMICONDUCTOR DEVICE
A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third...
2018/0323265 SEMICONDUCTOR HETEROSTRUCTURES AND METHODS FOR FORMING SAME
A heterostructure includes a substrate; an intermediate layer disposed on the substrate; and a group III-V layer having a first primary surface disposed on the...
2018/0323264 FABRICATION OF WRAP-AROUND AND CONDUCTING METAL OXIDE CONTACTS FOR IGZO NON-PLANAR DEVICES
Embodiments of the invention include non-planar InGaZnO (IGZO) transistors and methods of forming such devices. In an embodiment, the IGZO transistor may...
2018/0323263 SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE,...
A silicon carbide semiconductor substrate, including a silicon carbide substrate of a first conductivity type, a buffer layer of the first conductivity type...
2018/0323262 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING...
A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a <11-20> direction....
2018/0323261 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
A silicon carbide semiconductor device includes: a semiconductor substrate that has a front surface and a rear surface, and is made of silicon carbide; and an...
2018/0323260 DUAL THRESHOLD VOLTAGE (VT) CHANNEL DEVICES AND THEIR METHODS OF FABRICATION
Embodiments of the present invention are directed to dual threshold voltage (VT) channel devices and their methods of fabrication. In an example, a...
2018/0323259 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes a plurality of fins. Each of the fins has a multi-layer stack comprising a first nanowire and a second nanowire. A first...
2018/0323258 HIGH-VOLTAGE SEMICONDUCTOR DEVICES WITH IMPROVED EAS AND RELATED MANUFACTURING METHOD THEREOF
A high-voltage semiconductor device has a main high-voltage switch device and a current-sense device for mirroring the current through the main high-voltage...
2018/0323257 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
A semiconductor device and its manufacturing method, relating to semiconductor techniques, are presented. The semiconductor device includes a substrate,...
2018/0323256 FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at...
2018/0323255 ON-CHIP MIM CAPACITOR
A method for forming an on-chip capacitor with complementary metal oxide semiconductor (CMOS) devices includes forming a first capacitor electrode between gate...
2018/0323254 SEMICONDUCTOR DIE WITH BACK-SIDE INTEGRATED INDUCTIVE COMPONENT
An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front...
2018/0323253 SEMICONDUCTOR DEVICES WITH THROUGH-SUBSTRATE COILS FOR WIRELESS SIGNAL AND POWER COUPLING
A semiconductor device comprising a substrate and a substantially spiral-shaped conductor is provided. The substantially spiral-shaped conductor extends...
2018/0323252 DISPLAY APPARATUS
A display apparatus including a first conductive layer; a first insulating layer including a first opening exposing a first upper surface of the first...
2018/0323251 DISPLAY DEVICE
A display device, includes a substrate; first to fourth subpixels sequentially arranged on the substrate; a first power line on a left side of the first...
2018/0323250 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes a substrate including a bending area, a display area. A plurality of first wires is disposed above the substrate. A second wire is...
2018/0323249 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display device and a method of manufacturing the same are provided that may reduce the resistance of a second electrode and may...
2018/0323248 DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of...
2018/0323247 MICRO DISPLAY DEVICE AND DISPLAY INTEGRATED CIRCUIT
A micro display device and a display integrated circuit are provided. Embodiments of the micro display device includes: a silicon substrate; a pixel array...
2018/0323246 ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
The present invention provides an organic light-emitting display panel and manufacturing method thereof. The method is to use the feature that silicon nitride...
2018/0323245 Organic Light Emitting Display Device and Method of Manufacturing the Same
An organic light emitting display device includes a substrate including a plurality of pixels defined thereon; a first electrode disposed at each pixel; a bank...
2018/0323244 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing an organic light emitting display device can include providing a source electrode, a drain electrode and a signal pad on a substrate;...
2018/0323243 ARRAY SUBSTRATE, IMAGE COLLECTION METHOD AND DISPLAY DEVICE
An array substrate includes: a base substrate; a plurality of first electrodes disposed on the base substrate; a plurality of second electrodes disposed above...
2018/0323242 Display With Nanostructure Angle-of-View Adjustment Structures
A display may have an array of pixels. Each pixel may have a light-emitting diode such as an organic light-emitting diode or may be formed from other pixel...
2018/0323241 DISPLAY PANEL, DRIVING METHOD THEREOF, AND DISPLAY DEVICE
A display panel, a driving method thereof, and a display device are provided in the field of display technology. The display panel includes: a plurality of...
2018/0323240 DISPLAY DEVICE
Disclosed is a display device capable of reducing the thickness and the weigh thereof. In an organic light-emitting diode display device having a touch sensor,...
2018/0323239 DISPLAY DEVICE
A display device is provided. The display device includes a substrate having a first edge and a second edge opposite to the first edge. There is a first...
2018/0323238 RESISTIVE MEMORY CELL STRUCTURES AND METHODS
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first...
2018/0323237 PHASE-CHANGE MEMORY
A phase-change memory includes a strip of phase-change material that is coated with a conductive strip and surrounded by an insulator. The strip of...
2018/0323236 HIGHLY RELIABLE LIGHT EMITTING DIODE
Disclosed herein is a highly reliable light emitting diode. In the light emitting diode, a connector connecting light emitting cells to each other is spaced...
2018/0323235 ELECTRODELESS LIGHT-EMITTING DIODE DISPLAY AND METHOD FOR FABRICATING THE SAME
An electrodeless LED display and a method for fabricating the same are disclosed. In the method, an epitaxial layer is provided and a transparent conduction...
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