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Patent # Description
2018/0323082 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device may include forming active patterns, forming a polygonal mask pattern having a first width and a second width...
2018/0323081 GETTERING LAYER FORMING METHOD
A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a diffusing step of heating the...
2018/0323080 GETTERING LAYER FORMING METHOD
A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a drying step of drying the wafer...
2018/0323079 METHODS FOR PROCESSING SEMICONDUCTOR WAFERS HAVING A POLYCRYSTALLINE FINISH
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. A first slurry is applied to the semiconductor...
2018/0323078 PITCH DIVISION USING DIRECTED SELF-ASSEMBLY
A method including forming a target pattern of a target material on a surface of a substrate; depositing a block copolymer on the surface of the substrate,...
2018/0323077 ETCHING METHOD
An etching method for etching a silicon-containing layer into a pattern of a mask is provided. The mask is formed by etching, from a block copolymer layer that...
2018/0323076 Substrate Processing Method and Solvent Used for Same Method
A processing method of a semiconductor substrate according the present invention includes: cleaning a surface of the semiconductor substrate with a water-based...
2018/0323075 SiN SPACER PROFILE PATTERNING
Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a...
2018/0323074 METAL-BASED PASSIVATION-ASSISTED PLASMA ETCHING OF III-V SEMICONDUCTORS
According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched...
2018/0323073 FABRICATION OF FINS USING VARIABLE SPACERS
A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the...
2018/0323072 Method For Increasing Trench CD in EUV Patterning Without Increasing Single Line Opens or Roughness
A substrate is provided with a patterned layer over a stack of one or more processing layers. The processing layers include at least one trim layer and at...
2018/0323071 Stress Relieving Semiconductor Layer
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing...
2018/0323070 METHOD AND SYSTEM FOR APPLYING MATERIALS ON A SUBSTRATE
Embodiments of the invention are directed to a method of printing lines. A method may include positioning a plurality of print units according to a predefined...
2018/0323069 METHOD AND DEVICE FOR ALIGNING A FIRST SUBSTRATE WITH A SECOND SUBSTRATE
A method for aligning a first substrate, in particular a mask, with a second substrate, in particular a wafer, comprises inserting the first substrate and the...
2018/0323068 Methods of Forming Tungsten Pillars
Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned...
2018/0323067 NARROWED FEATURE FORMATION DURING A DOUBLE PATTERNING PROCESS
Interconnect structures and methods of fabricating an interconnect structure. A first mandrel line, a second mandrel line, and a non-mandrel line between the...
2018/0323066 FIELD-EFFECT TRANSISTORS WITH A BODY PEDESTAL
Device structures for a field-effect transistor and methods of forming a device structure for a field-effect transistor. A trench isolation region is formed in...
2018/0323065 Method for Forming Stacked Nanowire Transistors
A semiconductor device includes a substrate, a first semiconductor stack including elongated semiconductor features isolated from each other and overlaid in a...
2018/0323064 METHOD FOR CLEANING CHAMBER, METHOD FOR TREATING SUBSTRATE, AND APPARATUS FOR TREATING SUBSTRATE
An apparatus and a method for cleaning a chamber are provided. A method for cleaning a chamber having a treatment space for treating a substrate includes...
2018/0323063 METHOD AND APPARATUS FOR USING SUPERCRITICAL FLUIDS IN SEMICONDUCTOR APPLICATIONS
A method and apparatus for processing a substrate is provided. A feed stream of carbon dioxide liquid is supplied under pressure from a feed supply to a...
2018/0323062 BEVEL ETCH PROFILE CONTROL
Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein...
2018/0323061 Self-Aligned Triple Patterning Process Utilizing Organic Spacers
A method to implement self-aligned triple patterning techniques for the processing of substrates is provided. In one embodiment, a self-aligned triple...
2018/0323060 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND RECORDING MEDIUM
A substrate after being subjected to a dry etching processing is prepared. Then, an ultraviolet ray having a preset peak wavelength among multiple peak...
2018/0323059 METHODS FOR FORMING SILICON-CONTAINING EPITAXIAL LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately...
2018/0323058 METHOD FOR POST CHEMICAL MECHANICAL POLISHING CLEAN
A method for post chemical mechanical polishing clean is provided in the present invention, which include the steps of providing a substrate, performing a...
2018/0323057 SELECTIVE ATOMIC LAYER DEPOSITION WITH POST-DOSE TREATMENT
Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition...
2018/0323056 METHODS FOR FORMING A SILICON NITRIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a...
2018/0323055 METHODS FOR SELECTIVELY FORMING A SILICON NITRIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical...
2018/0323054 Efficient Mid-Infrared Sources
A emitter is formed of a thin-film membrane disposed within a cavity so as to provide a output beam. The emitter may be configured to obtain broadband light....
2018/0323053 Multimode Ion Mirror Prism and Energy Filtering Apparatus and System for Time-Of-Flight Mass Spectrometry
A mass analyzing apparatus and system are disclosed for time-of-flight ("TOF") mass spectrometry analysis. A representative system includes a first...
2018/0323052 Optimized Electromagnetic Field On Side-On FT-ICR Mass Spectrometers
Improvements to a side-on Penning trap include a feedback system for stabilizing the magnetic field. This system includes a magnetic sensor that measures the...
2018/0323051 CRYOGENIC 2D LINEAR ION TRAP AND USES THEREOF
Described herein are cryogenic linear ion traps and uses thereof.
2018/0323050 ION INTEGRATING AND COOLING CELL FOR MASS SPECTROMETER
A method for operating a mass spectrometer comprises: generating a stream of ions by an ion source; directing the stream of ions into a first one of a pair of...
2018/0323049 Early Detection of Hepatocellular Carcinoma in High Risk Populations Using MALDI-TOF Mass Spectrometry
Hepatocellular carcinoma (HCC) is detected in a patient with liver disease. Mass spectrometry data from a blood-based sample from the patient is compared to a...
2018/0323048 FLEXIBLE ADJUSTABLE RETURN PATH MAGNET ASSEMBLY AND METHODS
The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly...
2018/0323047 SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES
A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including...
2018/0323046 PROCESSING METHOD IN PROCESSING APPARATUS USING HALOGEN-BASED GAS
A processing apparatus performs a predetermined process on an object to be processed by supplying halogen-based gas into a chamber in which a vacuum is...
2018/0323045 MANUFACTURING METHODS TO REDUCE SURFACE PARTICLE IMPURITIES AFTER A PLASMA PROCESS
Manufacturing methods are disclosed to reduce surface particle impurities after a plasma process (e.g., etch, deposition, etc.) by repelling particles trapped...
2018/0323044 CHAMBER WITH VERTICAL SUPPORT STEM FOR SYMMETRIC CONDUCTANCE AND RF DELIVERY
A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for...
2018/0323043 MODULAR MICROWAVE SOURCE WITH LOCAL LORENTZ FORCE
Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing...
2018/0323042 METHOD TO MODULATE THE WAFER EDGE SHEATH IN A PLASMA PROCESSING CHAMBER
The present disclosure generally relates to methods of and apparatuses for controlling a plasma sheath near a substrate edge. The apparatus includes an...
2018/0323041 PLASMA PROCESSING DEVICES HAVING MULTI-PORT VALVE ASSEMBLIES
A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of...
2018/0323040 Power Supply Systems and Methods for Generating Power with Multiple Amplifier Paths
A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or...
2018/0323039 ACTIVE FAR EDGE PLASMA TUNABILITY
The present disclosure relates to methods and apparatuses for controlling a plasma sheath near a substrate edge. The method includes changing the ...
2018/0323038 METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM
Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power...
2018/0323037 APPARATUSES AND METHODS FOR AVOIDING ELECTRICAL BREAKDOWN FROM RF TERMINAL TO ADJACENT NON-RF TERMINAL
An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The...
2018/0323036 GUN LENS DESIGN IN A CHARGED PARTICLE MICROSCOPE
A charged particle microscope and a method of operating a charged particle microscope are disclosed. The microscope employs a source for producing charged...
2018/0323035 CHARGED PARTICLE BEAM APPARATUS, OBSERVATION METHOD USING CHARGED PARTICLE BEAM APPARATUS, AND PROGRAM
A charged particle beam apparatus includes: an optical system that irradiates a sample mounted on a sample stage with a charged particle beam; at least one...
2018/0323034 Reduced Coulomb Interactions in a Multi-Beam Column
Performance of a multi-electron-beam system can be improved by reducing Coulomb effects in the illumination path of a multi-beam inspection system. A...
2018/0323033 Mounted X-ray Window
A mounted x-ray window can be strong and transmissive to x-rays, can have a hermetic seal, and can withstand high temperatures. The mounted x-ray window can...
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