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Patent # Description
2019/0172935 SEMICONDUCTOR DEVICE
A semiconductor device includes: a first electrode; a second electrode; a semiconductor region forming region between the first electrode and the second...
2019/0172934 SUPERJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In at least one general aspect, a method can include forming a plurality of first active pillars and a plurality of edge pillars in a first semiconductor layer...
2019/0172933 SEMICONDUCTOR DEVICE
A bipolar transistor including a first collector layer, a second collector layer, a base layer, and an emitter layer is disposed on a substrate. Etching...
2019/0172932 MANUFACTURING METHOD OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND DISPLAY SUBSTRATE
The present disclosure provides a manufacturing method of thin film transistor, a thin film transistor and a display substrate. The manufacturing method...
2019/0172931 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL
A thin film transistor and a manufacturing method thereof, an array substrate and a display panel are provided, and the manufacturing method includes: forming...
2019/0172930 HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR
An integrated circuit includes an extended drain MOS transistor with parallel alternating active gap drift regions and field gap drift regions. The extended...
2019/0172929 Fabrication Of Vertical Field Effect Transistor Structure With Strained Channels
A method of forming a vertical fin field effect transistor (vertical finFET) with a strained channel, including forming one or more vertical fins on a...
2019/0172928 METHOD OF FORMING VERTICAL TRANSISTOR HAVING DUAL BOTTOM SPACERS
A method of forming a spacer for a vertical transistor is provided. The method includes forming a fin structure on a substrate, depositing a first spacer on...
2019/0172927 VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR INCLUDING AIR-GAP TOP SPACER
A vertical transport field-effect transistor includes a top source/drain region separated from an underlying gate stack by a top spacer including open gaps to...
2019/0172926 GATE STRUCTURE FOR SEMICONDUCTOR DEVICE
A method of forming a fin field effect transistors (finFET) on a substrate includes forming a fin structure on the substrate, forming a protective layer on the...
2019/0172925 SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device includes forming a first semiconductor region at a front surface of a substrate, the first semiconductor region...
2019/0172924 VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR INCLUDING DUAL LAYER TOP SPACER
A vertical transport field-effect transistor includes a top source/drain region separated from an underlying gate stack by a multi-layer top spacer that...
2019/0172923 Integrated Epitaxial Metal Electrodes
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are...
2019/0172922 VERTICAL TRANSPORT FETS HAVING A GRADIENT THRESHOLD VOLTAGE
Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient...
2019/0172921 SYSTEMS, METHODS, AND APPARATUSES FOR IMPLEMENTING A HIGH MOBILITY LOW CONTACT RESISTANCE SEMICONDUCTING OXIDE...
In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing a high mobility low contact resistance...
2019/0172920 JUNCTIONLESS TRANSISTOR DEVICE AND METHOD FOR PREPARING THE SAME
A functionless transistor device includes a semiconductor substrate, a channel, a first source/drain, a second source/drain, a gate and a gate dielectric...
2019/0172919 TRANSISTOR DEVICE
A transistor device includes an active region surrounded by an isolation structure, a gate structure disposed over the active region and the isolation...
2019/0172918 TRANSISTOR DEVICE
The present disclosure provides a transistor device. The transistor device includes an active region surrounded by an isolation structure, a gate structure...
2019/0172917 Transistor Device with a Field Electrode that Includes Two Layers
Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body...
2019/0172916 Power Semiconductor Device Having a Trench with Control and Field Electrode Structures
According to an embodiment of a power semiconductor device, the device includes a semiconductor body coupled to a first load terminal and a second load...
2019/0172915 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A semiconductor device includes a substrate, an active layer, a source electrode, a drain electrode, a p-type doped layer, a gate electrode, a passivation...
2019/0172914 P-TYPE OXIDE, P-TYPE OXIDE-PRODUCING COMPOSITION, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE,...
A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu.sub.2O where x denotes a proportion by mole of AO and y...
2019/0172913 Method for Forming a Semiconductor Structure and a Semiconductor Structure Manufactured Thereof
A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a monocrystalline substrate having...
2019/0172912 METHOD OF EVALUATING INSULATED-GATE SEMICONDUCTOR DEVICE
A method of evaluating an insulated-gate semiconductor device having an insulated-gate structure including a channel formation layer made of a wide-bandgap...
2019/0172911 SUPPERLATICE CHANNEL INCLUDED IN A TRENCH
An embodiment includes an apparatus comprising: a trench included in an insulation layer that is formed on a substrate, the trench having a top portion and a...
2019/0172910 Silicon Carbide Semiconductor Component Comprising Trench Gate Structures and Shielding Regions
A semiconductor component includes gate structures extending into a silicon carbide body from a first surface. A width of the gate structures along a first...
2019/0172909 TRANSISTOR DEVICE AND SEMICONDUCTOR LAYOUT STRUCTURE
The present disclosure provides a transistor device and a semiconductor layout structure. The transistor device includes an active region disposed in a...
2019/0172908 SEMICONDUCTOR DEVICE
A semiconductor device having a silicon-on-insulator (SOI) structure in which a source region and a drain region extend along a longitudinal direction that is...
2019/0172907 ISOLATION OF CIRCUIT ELEMENTS USING FRONT SIDE DEEP TRENCH ETCH
An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate...
2019/0172906 SEMICONDUCTOR DEVICES
A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a...
2019/0172905 POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a power device is disclosed. The method for manufacturing the power device comprises: forming a first doped region on the...
2019/0172904 CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting...
2019/0172903 MAKING ELECTRICAL COMPONENTS IN HANDLE WAFERS OF INTEGRATED CIRCUIT PACKAGES
Each of a first and a second integrated circuit structures has hole(s) in the top surface, and capacitors at least partially located in the holes. A...
2019/0172902 Semiconductor Device and Method of Forming Substrate Including Embedded Component with Symmetrical Structure
A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is...
2019/0172901 Semiconductor Resistor Structure And Method For Making
Disclosed examples include a resistor comprising a semiconductor structure having a length dimension with first and second ends spaced from one another and an...
2019/0172900 HIGH BREAKDOWN VOLTAGE PASSIVE ELEMENT
Warping of a semiconductor wafer occurring due to a difference in the thermal expansion rates of an insulating film and the semiconductor wafer is restricted....
2019/0172899 DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
A display panel includes a first conductive layer including a first layer, a second layer, and a third layer sequentially stacked, and a second conductive...
2019/0172898 LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A light-emitting display device includes: a first substrate, a subpixel on the substrate, a contact area on the first substrate, a cover layer including first...
2019/0172897 LIQUID CRYSTAL DISPLAY DEVICE
A display device having a display region and a peripheral region in contact with the display region above a substrate is provided. The display region has a...
2019/0172896 DISPLAY APPARATUS HAVING GROOVED TERMINALS AND METHOD OF MANUFACTURING THE SAME
A display apparatus includes a display panel having a display substrate on which a plurality of pad terminals is disposed, and a driving unit having a...
2019/0172895 DISPLAY PANEL AND DISPLAY DEVICE
A display panel and a display device are provided. The display panel includes a base substrate; a plurality of gate lines extending in a row direction and a...
2019/0172894 DISPLAY DEVICE
A display device includes: a substrate; pixels, the pixels each including at least one transistor and a light emitting device connected to the transistor; data...
2019/0172893 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display is disclosed. The organic light emitting diode display includes a first substrate and a second substrate facing each...
2019/0172892 FLEXIBLE OLED PANEL FOR LIGHTING DEVICE AND METHOD OF MANUFACTURING SAME
A flexible OLED panel for a lighting device according to the present invention includes a substrate which is made of a polymer material and has a first light...
2019/0172891 OLED PANEL FOR LIGHTING DEVICE AND METHOD OF MANUFACTURING THE SAME
The present application relates to an OLED panel for a lighting device and a method of manufacturing the same. An OLED panel for a lighting device includes: a...
2019/0172890 DISPLAY PANEL
A display panel includes a first substrate having a display area and a peripheral area. The display area includes pixels with first output wires connected to...
2019/0172889 WIRING STRUCTURE AND DISPLAY DEVICE HAVING THE WIRING STRUCTURE
Provided is a wiring structure having: a first wiring; a first insulating film over the first wiring; a second wiring over the first insulating film, the...
2019/0172888 ORGANIC LIGHT EMITTING DISPLAY DEVICE
The organic light emitting display device includes a substrate having a display area in which a plurality of pixels including an organic light emitting diode...
2019/0172887 ARRAY SUBSTRATE, DISPLAY DEVICE AND PATTERN RECOGNITION METHOD THEREOF
An array substrate, including a pattern recognition layer, a light-shielding layer, and a plurality of light-emitting devices. The pattern recognition layer is...
2019/0172886 Oled Display Panel, Method For Manufacturing The Same And Display Device
The present disclosure relates to an OLED display panel, a method for manufacturing the same and a display device. The OLED display panel includes: a...
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