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| Patent # | Description |
|---|---|
| US-5,410,202 |
Wound electric-motor stator A wound electric-motor stator (1) equipped with a device for the temporary storage of the wires (6) of the winding of the stator. This storage device consists,... |
| US-5,410,201 |
Electric Motor An electric motor used for example in a magnetic disk drive, comprises a rotor having a hub on which the magnetic disk is mounted, and an annular driving... |
| US-5,410,200 |
Hybrid type stepping motor A hybrid stepping motor in which each of two rotor yokes constituting a rotor is divided in its axial direction into at least two rotor yoke portions, the rotor... |
| US-5,410,199 |
Vertically carrying superconduction motor A vertically carrying apparatus comprising a carrying capsule that has a space for accommodating an object which is to be carried, the capsule incorporating a... |
| US-5,410,198 |
Propulsion system A propulsion system has a substantially tubular housing having an axis, an element generating an electric current, an element generating a magnetic field... |
| US-5,410,197 |
Circuitry and method for sense amplification In a method and circuitry for sense amplification, a differential input voltage (84a-b) is input, and a differential output voltage (90a-b) is output. The... |
| US-5,410,196 |
Circuit for finding the frequency band of an input signal which might
have different frequency bands An object of the present invention is enhancing a capability of integration of a frequency finding circuit for finding a frequency of an input signal. A signal... |
| US-5,410,195 |
Ripple-free phase detector using two sample-and-hold circuits A phase detector comprises a ramp voltage generator for receiving a reference pulse of a constant frequency and an input pulse and producing a ramp voltage... |
| US-5,410,194 |
Asynchronous or synchronous load multifunction flip-flop According to the present invention hardware is provided in a user configurable logic integrated circuit chip to allow a user to select multiple storage functions... |
| US-5,410,193 |
Apparatus and technique for connecting a source of zero crossing AC
voltage to and disconnecting it from an AC... An arrangement for controlling a zero crossing switch in order to connect a source of zero crossing AC voltage to and disconnecting it from an AC load line is... |
| US-5,410,192 |
Potential data selection circuit There is provided a potential data selection circuit suitable for use, e.g., in a device for driving a liquid crystal pane adapted for selecting an arbitrary one... |
| US-5,410,191 |
Monostable multivibrator A monostable multivibrator is formed in a monolithic integrated circuit along with a voltage controlled oscillator (VCO). The VCO and the monostable... |
| US-5,410,190 |
Circuit for shortening the turn-off time of a power transistor A circuit and method for driving an inductive load has a first transistor with a current flow path connected to provide drive current at an output node to the... |
| US-5,410,189 |
Input buffer having an accelerated signal transition A CMOS buffer includes an input inverter, and a pull-up circuit coupled to the input inverter. The pull-up circuit provides an additional, temporary, signal... |
| US-5,410,188 |
Enhanced integrated waveshaping circuit The waveshaping functions provided by a summing resistor network and filter are performed by a waveshaping circuit that can be integrated with transceiving... |
| US-5,410,187 |
Output circuit for controlling a relay which has capability for
operating with wide range of input voltages A relay output circuit is provided which enables a relay coil to be connected to a possibly variable input DC voltage without requiring relatively high power... |
| US-5,410,186 |
Programmable digital to analog converter By providing data to a selection switch via a multiplexor so it can be programmed to supply either a current programmably controlled by a shift register or a... |
| US-5,410,185 |
Internal bridging contact A bridging contact between internal contacts in a semiconductor integrated circuit is formed which is insulated from any connection to an intervening feature. A... |
| US-5,410,184 |
Microelectronic package comprising tin-copper solder bump
interconnections, and method for forming same A microelectronic package comprises an integrated circuit component mounted on a substrate by solder bump interconnections formed of a lead-free, tin-base solder... |
| US-5,410,183 |
Contact structure of semiconductor device and method of manufacturing
the same A contact structure of a semiconductor device comprises a lamination of at least first insulating film, first conductive film and second insulating film formed... |
| US-5,410,182 |
High density semiconductor device having inclined chip mounting A semiconductor device having a rectangular COB substrate body, a die pad on the surface of the substrate body, a plurality of outer leads at the periphery of... |
| US-5,410,181 |
Assembly for mounting an electronic device having an optically erasable
surface An integrated circuit (106) having an optically erasable portion (114) is joined to a substrate (102) such that the optically erasable portion faces the... |
| US-5,410,180 |
Metal plane support for multi-layer lead frames and a process for
manufacturing such frames A metal plane support structure of a semiconductor device multi-layer lead frame having one or more metal planes, of different types, arranged in stacked and... |
| US-5,410,179 |
Microwave component having tailored operating characteristics and method
of tailoring The electrical operating characteristics of a microwave circuit are modified by providing a dielectric layer on the circuit in a pattern which modifies the... |
| US-5,410,178 |
Semiconductor films Semiconductor films of the formula (InP).sub.1-x (TlP.sub.3).sub.x on InP substrates which cover the bandgap of 2-12 .mu.m for use with long wavelength infrared... |
| US-5,410,177 |
Planar semiconductor and Zener diode device with channel stopper region A planar semiconductor device having a heavily doped channel stopper region of the first conductivity type and at least the following components: a Zener diode... |
| US-5,410,176 |
Integrated circuit with planarized shallow trench isolation A method for forming isolation structures in an integrated circuit, and the structures so formed, are disclosed. After definition of active regions of the... |
| US-5,410,175 |
Monolithic IC having pin photodiode and an electrically active element
accommodated on the same semi-conductor... This invention relates to a monolithic IC having a PIN photodiode and an n-p-n bipolar transistor formed on a single semiconductor (silicon) substrate. In... |
| US-5,410,174 |
Contact structure for integrated circuits A method is provided for forming a polysilicon buried contact of an integrated circuit, and an integrated circuit formed according to the same. A field oxide... |
| US-5,410,173 |
Semiconductor integrated circuit device In a semiconductor integrated circuit device having cells comprising circuit elements including MISFETs, and a multi-layer wiring structure, wirings of a first... |
| US-5,410,172 |
Thin film transistor and preparation thereof A thin film transistor is provided with a semiconductor layer disposed on an insulating layer region having a channel region and a plurality of main electrode... |
| US-5,410,171 |
Vertical type semiconductor with main current section and emulation
current section A power DMOS semiconductor device providing improved current detection accuracy can be produced using standard pocessess. The device includes main wells,... |
| US-5,410,170 |
DMOS power transistors with reduced number of contacts using integrated
body-source connections Two topologically different cells are disclosed that reduce the total number of contacts per device and that are applicable to mid- to high-voltage DMOS... |
| US-5,410,169 |
Dynamic random access memory having bit lines buried in semiconductor
substrate There is provided a DRAM memory cell structure. The semiconductor structure includes a semiconductor substrate of a first conductivity type having a main... |
| US-5,410,168 |
Infrared imaging device An infrared imaging device includes a first conductivity type first semiconductor layer having a small energy band gap, a first conductivity type second... |
| US-5,410,167 |
Semiconductor device with reduced side gate effect A silicon nitride film 2 is formed on a GaAs substrate 1 and patterned to selectively expose the GaAS substrate surface in uniformly distributed areas having a... |
| US-5,410,166 |
P-N junction negative electron affinity cathode A cold cathode electron sourcing arrangement wherein a negative electron affinity material such as p-type diamond is disposed adjacent a p-n junction in order... |
| US-5,410,165 |
Thin film transistor with conductive layer and static RAM with thin film
transistor A thin film transistor includes a semiconductor thin film formed with a source region and a drain region at opposite end portions thereof and having an offset... |
| US-5,410,164 |
Display electrode substrate A display elect:rode substrate comprising at least two, first and second, TFTs connected in series to each picture element, wherein the first and second thin... |
| US-5,410,163 |
Semi-conductor integrated circuit device including connection and
disconnection mechanisms to connect and... A monitor circuit provided in a chip in which a semiconductor integrated circuit is formed. Connection mechanisms and disconnection mechanisms are connected in... |
| US-5,410,162 |
Apparatus for and method of rapid testing of semiconductor components at
elevated temperature An apparatus and method for rapidly changing the temperature of a semiconductor wafer, in order to perform electrical tests or stress at elevated temperature,... |
| US-5,410,161 |
Semiconductor device equipped with characteristic checking element Dummy transistors (each composed of a dummy gate electrode and n.sup.+ -diffused layers) are disposed adjacent to a transistor for characteristic checking which... |
| US-5,410,160 |
Interband tunneling field effect transistor A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is... |
| US-5,410,159 |
Light-emitting diode A light-emitting diode, in which light is emitted from a side opposite to a substrate, includes a compound semiconductor substrate of a first conductivity type,... |
| US-5,410,158 |
Bipolar transistor apparatus with iso-terminals Apparatus including a diamond semiconductor material bipolar transistor having associated therewith a distally disposed iso-collector. The iso-collector, when... |
| US-5,410,157 |
Book dimension detector The present invention detects a bad book, i.e. one having improper dimensions, by relying upon sensors for sensing the leading and trailing edges of the book and... |
| US-5,410,156 |
High energy x-y neutron detector and radiographic/tomographic device An improved fast neutron x-y detector and radiographic/tomographic device utilizing a white neutron probe (4). The invention includes a multiple scattering... |
| US-5,410,155 |
Scintillation counting medium and process A liquid scintillation medium for homogeneous flow systems which comprises solvent, fluor and optionally surfactant, wherein the solvent comprises benzyltoluene.... |
| US-5,410,154 |
Device for detecting quality alterations in bulk goods transported on
moving belt conveyors A device for detecting quality alterations in bulk goods transported on moving belt conveyors comprising a pulsed, monochromatic light source (1), frequency... |
| US-5,410,153 |
Position calculation in a scintillation camera For accurate position calculation of scintillation events in a gamma camera, improved methods are disclosed calibrating gain of photodetectors. The camera system... |
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