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| Patent # | Description |
|---|---|
| US-5,466,973 |
Delivery point voltage regulation in electric energy distribution
networks A method for regulating the voltage at which electric energy is supplied at the delivery points in a network for distributing electricity. The voltage of... |
| US-5,466,972 |
Metallization for polymer-dielectric multichip modules including a Ti/Pd
alloy layer Multilayer circuit devices include a plurality of metallized patterns thereon, said patterns being separated by a polymeric dielectric film. The various... |
| US-5,466,971 |
Semiconductor device having a multilayer interconnection layer A semiconductor device comprising: a semiconductor substrate; a plurality of conductive layers in which impuries are doped in a silicon composing the substrate;... |
| US-5,466,970 |
Hooked spring clip A spring clip having a flat base and a spring portion extending from the base portion intermediate its ends supporting a finger is used to hold an electronic... |
| US-5,466,969 |
Intelligent power device module In a semiconductor device module of this invention, on a metal base is formed a metal layer, on which an insulating substrate is formed. On the insulating... |
| US-5,466,968 |
Leadframe for making semiconductor devices A leadframe is provided for making semiconductor devices. The leadframe comprises at least one island arranged centrally widthwise of the leadframe and having... |
| US-5,466,967 |
Lead frame for a multiplicity of terminals A lead frame for a multiplicity of terminals, in particular of large-scale integrated semiconductor chips, arranged in a very confined space and consisting of... |
| US-5,466,966 |
Lead frame with leads projecting alternately from opposite sides of a
lead frame block The first step is forming belt-like resist films having a predetermined width on one and the other surfaces of a metal plate material alternately at a... |
| US-5,466,965 |
High efficiency, high power multiquantum well IMPATT device with optical
injection locking Multiple quantum wells within an impact avalanche transit time device (IMPATT) utilizing a plurality of gallium arsenide/aluminum gallium arsenide... |
| US-5,466,964 |
Semiconductor device capable of increasing reliability In a semiconductor device having a first insulator layer on a semiconductor substrate and accumulation electrode layers overlying the first insulator layer,... |
| US-5,466,963 |
Trench resistor architecture Dielectrically isolated trench fill material is used for the formation of one or more isolated resistor elements within respective ones of a plurality of... |
| US-5,466,962 |
Light-receiving semiconductor device with plural buried layers A light-receiving semiconductor device with improved light sensitivity. On a semiconductor substrate of a first conductivity type is formed a plurality of buried... |
| US-5,466,961 |
Semiconductor device and method of manufacturing the same A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate,... |
| US-5,466,960 |
BiCMOS device having self-aligned well tap and method of fabrication A well tap for a field effect device formed using a single polysilicon process and a silicide layer is provided. The polysilicon layer which makes contact to the... |
| US-5,466,959 |
Semiconductor device for influencing the breakdown voltage of transistors A semiconductor device for influencing the breakdown voltage of a transistor with a surface electrode arranged over a space charge region, separated from the... |
| US-5,466,958 |
MOS-type semiconductor device having electrode structure capable of
coping with short-channel effect and... In a semiconductor device, an n.sup.+ polysilicon layer is formed on a substrate through a gateoxide layer. A p.sup.+ source or drain diffusion layer is formed... |
| US-5,466,957 |
Transistor having source-to-drain nonuniformly-doped channel and method
for fabricating the same A semiconductor device including a substrate of a first conductivity type, a gate electrode laminated thereon and a source and drain region of a second... |
| US-5,466,956 |
Semiconductor integrated circuit device with electrode for measuring
interlayer insulator capacitance A semiconductor integrated circuit device that enables measurement of the capacitance of an insulator film without integration scale reduction in internal... |
| US-5,466,955 |
Field effect transistor having an improved transistor characteristic A field effect transistor (20) comprises a first semiconductor layer (24) and a second semiconductor layer (25) formed on the first semiconductor layer. The... |
| US-5,466,954 |
Shunt phototransistor with reverse bias protection A phototransistor is provided with a first resistor that operates as a shunt and a second resistor that operates to protect the device from damage that could be... |
| US-5,466,953 |
Denuded zone field effect photoconductive detector A compositionally graded HgCdTe radiation detector (10) is constructed to have a high purity "denuded zone" (Region 2) that is formed adjacent to a radiation... |
| US-5,466,952 |
Semiconductor device having an IGET and a control or protection component A semiconductor body (2) has first and second major surfaces (2c and 2d) with a first region (2b) of one conductivity type adjacent the first major surface (2c).... |
| US-5,466,951 |
Controllable power semiconductor element with buffer zone and method for
the manufacture thereof Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively... |
| US-5,466,950 |
Semiconductor light emitting device with short wavelength light
selecting means A semiconductor light emitting device. An emitting region has an active layer which emits short wavelength light and long wavelength light caused by inducing... |
| US-5,466,949 |
Silicon oxide germanium resonant tunneling A resonant tunneling diode (400) made of a germanium quantum well (406) with silicon oxide tunneling barriers (404, 408). The silicon oxide tunneling barriers... |
| US-5,466,948 |
Monolithic silicon opto-coupler using enhanced silicon based LEDS A monolithic opto-coupler employing silicon-insulator technology in which at least two p-type silicon islands disposed on said insulating layer and a light... |
| US-5,466,947 |
Protective overlayer for phosphor imaging screen A stimulable phosphor having a plasma-deposited protective coating comprising a substantially continuous, protective coating which conforms substantially to the... |
| US-5,466,946 |
Method and apparatus for discriminating between liquids and gases An apparatus and method for detecting a liquid/gas interface flowing in a transparent tube comprises directing light radially through the transparent tube... |
| US-5,466,945 |
Apparatus for detecting proper positioning of objects in a holder The positions of objects in a holder, such as a cassette containing semiconductor wafers, are determined by a system that projects a pair of coplanar light beams... |
| US-5,466,944 |
Optically-coupled differential line receiver An optically-coupled line receiver that handles multiple-state signals on data communications lines by using a differential circuit at the input. |
| US-5,466,943 |
Evacuated testing device having calibrated infrared source An evacuated testing device (100) including a housing (106) providing a test chamber (101) therein, a first mechanism (102) for retaining an object (116) under... |
| US-5,466,942 |
Charged beam irradiating apparatus having a cleaning means and a method
of cleaning a charged beam irradiating... A charged beam irradiating apparatus, comprises a charged beam generating means, a vacuum chamber having a part exposed by the charged beam, the part exposed... |
| US-5,466,941 |
Negative ion sputtering beam source A negative ion beam source includes a heated refractory metal ribbon which is positioned adjacent a beam forming electrode that is, biased to repel positive ions... |
| US-5,466,940 |
Electron detector with high backscattered electron acceptance for
particle beam apparatus An electron detector for use in particle beam apparatus, providing particularly high acceptance of backscattered electrons. The electron detector includes an... |
| US-5,466,939 |
Nuclear medicine imaging apparatus A first image collection memory collects two-dimensional image data within a predetermined energy window to constitute a fine matrix. A second image collection... |
| US-5,466,938 |
Corona discharge device Grid wires arranged in an axial direction of a photoconductive drum have a positional relation with projecting electrodes arranged at regular intervals in an... |
| US-5,466,937 |
Additive composition of defocusing images in an electron microscope A method of forming an image in an electron microscope. Because of the oscillating behaviour of the phase contrast transfer function (PCTF), images made by means... |
| US-5,466,936 |
Charged particle microscope A charged particle electron microscope comprises: a sample chamber to which a gas used for gas amplification is supplied; a charged particle irradiation means... |
| US-5,466,935 |
Programmable, scanned-probe microscope system and method Scanned-probe microscope systems (20, 140) are disclosed with analog control loops (24, 144) that can be electronically programmed to select from a plurality of... |
| US-5,466,934 |
Method and apparatus for identification of crystallographic defects An imaging apparatus (10) includes a scanning electron microscope (12) which is controlled to bombard numerous points (62) of a material sample (24) with an... |
| US-5,466,933 |
Dual electron analyzer An electron energy analyzer uses identical sectors, typically though not necessarily ninety degree segments of a toroid, disposed in complementary relationship... |
| US-5,466,932 |
Micro-miniature piezoelectric diaphragm pump for the low pressure
pumping of gases A pump is provided for use in a solid state mass-spectrograph for analyzing a sample gas. The spectrograph is formed from a semiconductor substrate having a... |
| US-5,466,931 |
Mass spectrometry method using notch filter A mass spectrometry method in which notch-filtered noise is applied to an ion trap to resonate all ions except selected parent ions out of the region of the... |
| US-5,466,930 |
Solid scintillators for detecting radioactive ions in solution A scintillator for absorbing and concentrating radioactive ions within a solution, the scintillator including a solid scintillator and an ionic layer on a... |
| US-5,466,929 |
Apparatus and method for suppressing electrification of sample in
charged beam irradiation apparatus When a charged beam is irradiated on a sample, charge up of electric charge of the same polarity as that of the charged beam is built up on the sample surface.... |
| US-5,466,928 |
Light detection device bonded to an optics housing which includes
tapered cavities for delivering adhesive to... A light-receiving detection device comprises: an optical device; a light-receiving surface for receiving light transmitted through the optical device; and a... |
| US-5,466,927 |
Inspection of translucent containers Apparatus for inspecting the bottom of a container that includes a light sensor positioned to view the container bottom through the open container mouth, a light... |
| US-5,466,926 |
Colored microlens array and method of manufacturing same A colored microlens array which functions as both a color filter array of different color filter layers and transparent microlenses. The colored microlens array... |
| US-5,466,925 |
Amplitude to phase conversion logic A means, method and apparatus is disclosed for providing at least one phase-modulated output from at least one amplitude-modulated input, which is used to... |
| US-5,466,924 |
Image intensifier tube with entrance screen photocathode which is
insensitive to light emitted by the exit... A proximity-type image intensifier tube has an entrance screen which includes a photocathode which is substantially insensitive to light of wavelengths above 500... |
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