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| Patent # | Description |
|---|---|
| US-5,466,671 |
Apidaecin-type peptide antibiotics with improved activities and/or
different antibacterial spectrum This invention provides a purified polypeptide having antibacterial activity comprising a first sequence Pro-Arg-Pro-Pro-His-Pro-Arg-X1, wherein X1 is Ile or... |
| US-5,466,670 |
Use of IGF-1 The invention relates to the use of IGF-1 for the manufacture of a medicament for treatment of Type 1 diabetes mellitus. the medicament comprising a subcutaneous... |
| US-5,466,669 |
Immunostimulatory agent There is disclosed an immunostimulatory agent comprising a peptide derived from lactoferrin having activity to modulate the release of inflammatory mediators... |
| US-5,466,668 |
Superior thrombomodulin analogs for pharmaceutical use The present invention relates to the use of analogs of thrombomodulin ("TM") that have the ability to enhance the thrombin-mediated activation of protein C but... |
| US-5,466,667 |
Prophylactic and therapeutic methods for treating edema with antamanides Unique methods for treating edemas in living subjects are provided comprising administering an effective amount of an antamanide or an antamanide analogue to the... |
| US-5,466,666 |
Amorphous monospheric forms of insulin derivatives A process for the production of an amorphous monospheric form of insulin derivatives is described, wherein the insulin derivative is dissolved in an... |
| US-5,466,665 |
Method of manufacturing Y-Ba-Cu-O superconducting thin film A method of manufacturing YBCO superconducting thin films is obtained which is capable of providing superconducting thin films having excellent crystallinity in... |
| US-5,466,664 |
Method for manufacturing a superconducting device having a thin
superconducting channel formed of oxide... A method of manufacturing a superconducting device involves forming a thin film on the surface of a substrate, forming a superconducting gate electrode on a... |
| US-5,466,663 |
Tetrahydrophthalimide derivatives and their use as herbicides There is disclosed a compound of the formula: ##STR1## wherein X is hydrogen or halogen; Y is halogen; Z is oxygen or sulfur; R.sup.1 is hydrogen or alkyl;... |
| US-5,466,662 |
Use of
4-chloro-3-(4-chloro-2-fluorophenyl)-5-difluoromethoxy-1-methyl-1H-pyraz
ole as an herbicidal treatment A method for killing or controlling weeds in a soya crop, which method comprises applying to the crop or to the location thereof a compound of formula (I): ... |
| US-5,466,661 |
Benzaldehyde oxime derivatives, production and use thereof The present invention relates to novel benzaldehyde derivatives, specifically .alpha.-azolyl-2-substituted benzaldehyde oxime derivatives, their production, and... |
| US-5,466,660 |
Tetrazolinones as herbicides for use in paddy Compositions comprising herbicidal tetrazolinones of the formula (I) ##STR1## wherein X is chlorine or bromine, Y is hydrogen, chlorine, bromine, methyl or... |
| US-5,466,659 |
Triclopyr butoxyethyl ester compositions comprising vegetable oil esters
as carriers This invention relates to novel triclopyr butoxyethyl ester (triclopyr BEE) compositions comprising the use of esters of vegetable oils as carriers in triclopyr... |
| US-5,466,658 |
Thermal dye transfer receiving element for mordanting ionic dyes A dye-receiving element for receiving a thermally-transferred ionic dye comprising a support having thereon a dye image-receiving layer, wherein the dye... |
| US-5,466,657 |
Heat transfer image-receiving sheets The present invention provides a heat transfer image-receiving sheet showing improved releasability at the time of heat-sensitive printing, which includes a... |
| US-5,466,656 |
Heat sensitive recording material The present invention provides a heat sensitive recording material comprising a recording layer formed on a substrate and containing a colorless or light-colored... |
| US-5,466,655 |
Heat-sensitive recording material A heat-sensitive recording material comprising a support and a heat-sensitive recording layer containing a leuco dye and a developer, formed on one side of the... |
| US-5,466,654 |
Erasable display medium A display medium is disclosed, comprising at least the following layers, in this order: a heating resistive layer, a conductive layer, a background layer and an... |
| US-5,466,653 |
Method for preparing negative-working wash-off relief images and
non-photosensitive elements for use therein A method for preparing high resolution, negative-working, wash-off relief images, preferably using ink jet printing, comprising the sequential steps of: (a)... |
| US-5,466,652 |
Process for the preparation of vinyl acetate catalyst A process for the manufacture of a Pd/Au/alkali metal catalyst, preferably a fluid bed catalyst used in the production of vinyl acetate comprising impregnating a... |
| US-5,466,651 |
Catalytic method A catalytic article for use in catalytic chemical conversions, which comprises; a metal monolith catalyst support and a catalytically active surfacey layer... |
| US-5,466,650 |
Catalyst for the dehalogenation of alphahalogenated carboxylic acids and
its use for purifying monochloroacetic... The invention relates to a catalyst formed of an active charcoal support in the form of particles or of cylinders having a diameter from 0.3 to 1.5 mm and a... |
| US-5,466,649 |
Polymerization catalyst systems, their production and use This invention is generally directed toward a catalyst system useful for polymerizing olefins. The catalyst system of this invention comprises a supported bulky... |
| US-5,466,648 |
Supported alpha-olefin dimerization catalyst The present invention is directed to a supported tungsten-based catalyst composition useful for the dimerization of alpha-olefins including ethylene. More... |
| US-5,466,647 |
Tertiary amino-aluminoxane halides Novel tertiary amine-aluminoxane halide derivatives are disclosed along with olefin polymerization catalyst and polymerization processes using such derivatives... |
| US-5,466,646 |
Process for the preparation of solid state materials and said materials A process for the preparation of solid state materials such as catalysts, electrolytes, piezo electric materials and superconductors is disclosed. The process... |
| US-5,466,645 |
Method for reactivating nitrogen-treated carbon catalysts A method is provided for the restoration of catalytic activity in deactivated nitrogen-treated carbon catalysts. Nitrogen-treated carbon catalysts are those... |
| US-5,466,644 |
Reactivation of water-soluble hydroformylation catalysts A process for regenerating a water-soluble hydroformylation catalyst system comprising a coupler rhodium hydrogen-carbonyl complex of rhodium and compounds of... |
| US-5,466,643 |
High zirconia fused cast refractories High zirconia fused cast refractories which include as chemical components of refractories in weight %, 85 through 91% of ZrO.sub.2, 7.0 through 11.2% of... |
| US-5,466,642 |
Wear resistant cubic-boron-nitride-based cutting tool A wear resistant C-BN-based cutting tool superior in toughness includes a specified amount of at least one of a Ti carbide/nitride component, a compound... |
| US-5,466,641 |
Process for forming polycrystalline silicon film An object of this invention is to provide a process for forming a practical polycrystalline silicon film of large crystal grain diameters, which is for use in... |
| US-5,466,640 |
Method for forming a metal wire of a semiconductor device The object of the present invention is to prevent the electrical short between the adjacent metal wires by forming metal wires alternately between insulation... |
| US-5,466,639 |
Double mask process for forming trenches and contacts during the
formation of a semiconductor memory device A method of forming contact to a semiconductor memory device feature comprises the steps of forming a first oxide layer over a feature such as a semiconductor... |
| US-5,466,638 |
Method of manufacturing a metal interconnect with high resistance to
electromigration A semiconductor device is provided which includes a conductive layer, an insulating film formed on the surface of the conductive layer, and a conductive metal... |
| US-5,466,637 |
Method of making a self-aligned contact in semiconductor device A method of making a self-aligned contact in a semiconductor device has some advantages in that the increasing tolerance of contact mask for following the... |
| US-5,466,636 |
Method of forming borderless contacts using a removable mandrel A semiconductor fabrication process for forming borderless contacts (130, 170, 172) using a removable mandrel (110). The process involves depositing a mandrel on... |
| US-5,466,635 |
Process for making an interconnect bump for flip-chip integrated circuit
including integral standoff and... An interconnect bump is formed on a substrate structure of a flip-chip microelectronic integrated circuit by sputtering a metal base layer on the substrate, and... |
| US-5,466,634 |
Electronic modules with interconnected surface metallization layers and
fabrication methods therefore Methods of fabrication for electronic modules having electrically interconnected side and end surface metallization layers and associated electronic modules are... |
| US-5,466,633 |
Optical reading head and method for making same An article and method for manufacturing an optical reading head (400,500) including an optically transparent substrate (100) with a first surface (103) and a... |
| US-5,466,632 |
Field oxide with curvilinear boundaries and method of producing the same A method of forming field oxides with curvilinear boundaries between active regions on a substrate in an integrated circuit (IC) so that the stresses induced in... |
| US-5,466,631 |
Method for producing semiconductor articles A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous... |
| US-5,466,630 |
Silicon-on-insulator technique with buried gap An silicon-on-insulator (SOI) isolation structure of a silicon substrate, which has a buried gap between active regions and the substrate, and supporting pillars... |
| US-5,466,629 |
Process for fabricating ferroelectric integrated circuit An oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM. A barrier layer made of titanium nitride, titanium... |
| US-5,466,628 |
Method of manufacturing trench capacitor with a recessed field oxide
layer A capacitor of a semiconductor device has a plate electrode which process margin and a method of manufacturing same are disclosed. The plate electrode has a... |
| US-5,466,627 |
Stacked capacitor process using BPSG precipitates A MOST capacitor for use in a DRAM is formed by using BPSG precipitates after densification as a mask for etching a BPSG layer to form BPSG islands. The BPSG... |
| US-5,466,626 |
Micro mask comprising agglomerated material The subject invention provides a method of forming recesses in a substrate such as a capacitor so as to increase the surface area thereof and therefore the... |
| US-5,466,625 |
Method of making a high-density DRAM structure on SOI A high density, DRAM cell array with a very short channel, vertical gate transfer transistor that can be manufactured using conventional photolithography process... |
| US-5,466,624 |
Isolation between diffusion lines in a memory array A method of forming a memory device with improved isolation between diffusion lines. Parallel, spaced apart thick oxide strips are grown on a substrate. Next,... |
| US-5,466,623 |
Method of making semiconductor integrated circuit having isolation oxide
regions with different thickness A method of manufacturing a semiconductor memory device having a peripheral circuit portion, the operating voltage of which is relatively high and a memory array... |
| US-5,466,622 |
Process for fabricating integrated devices including nonvolatile
memories and transistors with tunnel oxide... A process for simultaneously fabricating memory cells, transistors, and diodes for protecting the tunnel oxide layer of the cells, using the DPCC process wherein... |
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