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| Patent # | Description |
|---|---|
| US-5,527,766 |
Method for epitaxial lift-off for oxide films utilizing superconductor
release layers Novel structures and methods utilize layered copper oxide release materials to separate oxide films from growth substrates. Generally, the method comprises the... |
| US-5,527,765 |
Superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x produced at low temperatures A high temperature superconductor and composite structure. A superconductor is disposed on a silver substrate without interdiffusion. The superconductor is... |
| US-5,527,764 |
3-arylthionouracils useful as herbicides, defoliants, and desiccants Compounds having the structural formula ##STR1## wherein R.sub.1 is C.sub.1 -C.sub.4 alkyl, R.sub.2 is C.sub.1 -C.sub.4 alkyl or haloalkyl, R.sub.3 and... |
| US-5,527,763 |
Pyrimidine or triazine derivatives and herbicides A herbicide containing a pyrimidine or triazine derivative of the formula (I): ##STR1## [wherein A is a furan ring, a pyrimidine ring, a 1,2,4-triazine ring... |
| US-5,527,762 |
Antidoting herbicidal 3-isoxazolidinone compounds This invention embodies compositions comprising herbicidally effective compounds corresponding to the formula ##STR1## in which R.sub.1 and R.sub.2 are... |
| US-5,527,761 |
Antidoting herbicidal 3-isoxazolidinone compounds This invention embodies compositions comprising herbicidally effective compounds corresponding to the formula ##STR1## in which R.sub.1 and R.sub.2 are... |
| US-5,527,760 |
Process for the protection of plant seeds and apparatus to carry out
said process An improved process for the phytoprotection of plant seeds, wherein there is simultaneously applied to the seeds, on the one hand, at least one first liquid... |
| US-5,527,759 |
Heat transfer cover films The present invention relates to a heat transfer cover film characterized in that a specific transparent resin layer (2) is releasably provided on a substrate... |
| US-5,527,758 |
Direct thermal imaging process with improved tone reproduction A direct thermal imaging process wherein a non-photosensitive direct thermal recording material is heated dot-wise, and said direct thermal recording material... |
| US-5,527,757 |
Recording material for direct thermal imaging A non-photosensitive heat-sensitive recording material suited for use in direct thermal imaging by means of information-wise energized heating elements, wherein... |
| US-5,527,756 |
Catalyst assembly providing high surface area for nitric acid and/or HCN
synthesis A catalyst assembly is disclosed which comprises a plurality of foraminous wire mesh sheets disposed in intimate nested relation to each other along their broad... |
| US-5,527,755 |
Catalyst for the catalytic afterburning of exhaust gases containing
carbon monoxide and/or oxidizable organic... The invention relates to catalysts for the catalytic post-combustion of exhaust gases containing carbon monoxide and/or oxidizable organic compounds and... |
| US-5,527,754 |
Catalytic composition and process for the oxychlorination of ethylene
using such a composition Catalytic composition comprising copper chloride, magnesium chloride and caesium chloride deposited on an alumina, which may be used in particular for the... |
| US-5,527,753 |
Functionalized amine initiators for anionic polymerization A process for the preparation of hydrocarbon solutions of monofunctional amine initiators of the following general structures: ##STR1## wherein M is defined... |
| US-5,527,752 |
Catalysts for the production of polyolefins A catalyst precursor is provided which is useful, when combined with a cocatalyst, in the manufacture of polyolefins. The catalyst precursor is of the formula: ... |
| US-5,527,751 |
Polymerization catalyst and method for producing polyolefin or olefin
block copolymer using the same A polymerization catalyst comprising a reaction product of an organic rare earth metal compound of the formula (I), (wherein in the formula (I), Cp is a substituted... |
| US-5,527,750 |
Catalyst regeneration procedure for sulfur-sensitive catalysts A method of regenerating a sulfur-sensitive hydrocarbon conversion catalyst by employing sulfur-contaminated heat-transfer equipment of a hydrocarbon conversion... |
| US-5,527,749 |
Dielectric ceramic composition for high frequencies and method for
preparation of the same A dielectric ceramic composition for high frequencies and a method of preparation of such composition is described. The dielectric ceramic composition... |
| US-5,527,748 |
High density zirconium diboride ceramics prepared with preceramic
polymer binders Disclosed is a method for preparing high density zirconium diboride ceramic bodies. The method entails mixing zirconium diboride powder with a preceramic... |
| US-5,527,747 |
Rapid process for the preparation of diamond articles A rapid process for the preparation of diamond articles in which a porous, dense preform of diamond particles created by particle packing methods is subjected to... |
| US-5,527,746 |
Method for manufacturing an aluminum oxide sintered body An aluminum oxide based sintered body and a method for manufacturing the same are disclosed. The aluminum oxide based sintered body is composed of silicon... |
| US-5,527,745 |
Method of fabricating antifuses in an integrated circuit device and
resulting structure Various improvements in the fabrication of an antifuse having silicon-amorphous silicon-metal layer structure are presented. Included are improved deposition... |
| US-5,527,744 |
Wafer method for breaking a semiconductor A process for partially sawing the streets on semiconductor wafers. After sawing the streets can be covered by a protective material, and then the wafer... |
| US-5,527,743 |
Method for encapsulating an integrated circuit package The present invention provides a method for fabricating an integrated circuit package, as well the resulting integrated circuit package, which retains a heatsink... |
| US-5,527,742 |
Process for coated bonding wires in high lead count packages A transfer molded high lead count plastic semiconductor package is described. The packaged IC chip is mounted upon a suitable leadframe and the bonding pads wire... |
| US-5,527,741 |
Fabrication and structures of circuit modules with flexible interconnect
layers A method for fabricating a circuit module includes applying an outer insulative layer over a first patterned metallization layer on a first surface of a base... |
| US-5,527,740 |
Manufacturing dual sided wire bonded integrated circuit chip packages
using offset wire bonds and support block... A method is disclosed for constructing a dual-sided chip package onto a leadframe having a die pad and a set of lead fingers corresponding to the die pad.... |
| US-5,527,739 |
Process for fabricating a semiconductor device having an improved metal
interconnect structure A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal... |
| US-5,527,738 |
Method for forming contacts in semiconductor devices There is disclosed a method for forming a contact in a semiconductor device wherein a contact material is contacted with an area of a first conductive film... |
| US-5,527,737 |
Selective formation of low-density, low-dielectric-constant insulators
in narrow gaps for line-to-line... An interconnect structure and method is described herein. First, interconnect lines 14a-d are formed on a semiconductor body 10. Then, a dielectric layer 20 is... |
| US-5,527,736 |
Dimple-free tungsten etching back process A new method of metallization using a dimple-free tungsten plug is described. Semiconductor device structures are formed in and on a semiconductor substrate. An... |
| US-5,527,735 |
Ohmic electrode of n-type semiconductor cubic boron nitride and method
of producing same N-type c-BN is a heat-resistant material with a wide band gap. Ohmic electrodes are indispensable for making semiconductor devices utilizing n-type c-BN. The... |
| US-5,527,734 |
Method of manufacturing a semiconductor device by forming pyramid shaped
bumps using a stabilizer By using an electroless metallization bath to which a stabilizer is added which suppresses the cathodic partial reaction, pyramid-shaped bumps (53) can be grown... |
| US-5,527,733 |
Impurity doping method with adsorbed diffusion source For effecting impurity doping, a chemically active semiconductor surface is covered with an adsorption layer composed of an impurity element which forms a dopant... |
| US-5,527,732 |
Method for fabricating semiconductor laser and photo detecting arrays
for wavelength division multiplexing... The invention provides a method of fabricating two dimensional semiconductor surface emitting laser and photo detector arrays for wavelength division... |
| US-5,527,731 |
Surface treating method and apparatus therefor A surface treating method of the invention comprises the steps of generating mixed chemical species containing an intended chemical species of ions necessary for... |
| US-5,527,730 |
Method of forming a capacitor having contact hole treated with hydrogen
atoms and energy beam An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear... |
| US-5,527,729 |
Method of manufacturing a capacitor having metal electrodes On a silicon substrate, a silicon oxide layer, a first platinum layer, a dielectric film and a second platinum layer are formed, and then the second platinum... |
| US-5,527,728 |
Method of making thin oxide portions consisting of gate and tunnel
oxides particularly in electrically erasable... A method for forming thin oxide portions in electrically erasable and programmable read-only memory cells, including the use of the enhanced oxidation effect and... |
| US-5,527,727 |
Method of manufacturing split gate EEPROM cells The present invention discloses a method of manufacturing flash EEPROM cells. An active region is defined to include a source bit line region and a drain bit... |
| US-5,527,726 |
Self-aligned thin-film transistor constructed using lift-off technique A thin-film field-effect transistor is fabricated by forming an electrically insulative island between the source and the drain. A cap is formed on the island... |
| US-5,527,725 |
Method for fabricating a metal oxide semiconductor field effect
transistor A metal oxide semiconductor field effect transistor having an increased channel length in a limited area of a highly integrated chip where a gate electrode is... |
| US-5,527,724 |
Method to prevent latch-up and improve breakdown volatge in SOI mosfets SOI (silicon-on-insulator) technology has been touted as a promising approach for fabricating advanced integrated circuits because of its advantage over bulk... |
| US-5,527,723 |
Method for forming a dynamic contact which can be either on or off or
switched therebetween A vertically raised transistor (10) is formed having a substrate (12). A conductive plug region (22) is selectively or epitaxially formed to vertically elevate... |
| US-5,527,722 |
Method of fabrication of a semiconductor device having high-and
low-voltage MOS transistors A semiconductor device (76) is provided with a high-voltage portion including NMOS transistor (78) and PMOS transistor (82b) and a low-voltage portion including... |
| US-5,527,721 |
Method of making FET with two reverse biased junctions in drain region A polysilicon gate (42) of an N-channel MOSFET (40) includes a P+ doped central portion (42a), and N+ doped lateral portions (42b,42c) which face an N-type... |
| US-5,527,720 |
Method of forming a semiconductor device having a vertical insulated
gate FET and a breakdown region remote... A semiconductor device (1) includes a vertical insulated gate field effect device (2) and has a semiconductor body (3) with a first semiconductor region (4) of... |
| US-5,527,719 |
Process for making a semiconductor MOS transistor using a fluid material A process for formation of an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming an active region and an... |
| US-5,527,718 |
Process for removing impurities from polycide electrode and insulating
film using heat A process for producing a semiconductor device which includes a step of drawing out the impurities contained in the electrode film and/or insulating film and... |
| US-5,527,717 |
Method of making solar cell module with improved weathering
characteristics A process for producing a solar cell module is characterized in that a grid electrode is formed having a coating comprising an epoxy resin of 20 g/m.sup.2... |
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