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| Patent # | Description |
|---|---|
| US-5,554,908 |
Precombustion chamber device A precombustion chamber ignition device for preferably lean fuel-air mixtures and having a precombustion chamber. This precombustion chamber contains a electrode... |
| US-5,554,907 |
Vehicle speed measurement apparatus A vehicle speed monitoring system has a pair of parallel piezoelectric sensors or pressure transducers carried in closely spaced relation by a common elastomeric... |
| US-5,554,906 |
Ultrasonic motor An ultrasonic motor includes a piezoelectric member which is excited in response to a driving signal, an elastic member in which a travelling wave is produced... |
| US-5,554,905 |
Piezoelectric rotating motor A piezoelectric rotating motor includes a plurality of piezoelectric elements, a disk-shaped stator having a center portion in which the piezoelectric elements... |
| US-5,554,904 |
Vibration control apparatus having automatic gain control A vibration control apparatus that can impart stabilized self-induced vibration without amplitude changes even under changes in ambient temperature is disclosed.... |
| US-5,554,903 |
Rotary electric machine A rotary electric machine of an inner rotor type includes a hollow stator having multiple field magnets, each having a magnetic pole, arranged in a spaced... |
| US-5,554,902 |
Lightweight high power electromotive device and method for making same A lightweight high power electromotive device and a method for making the same is provided. The method includes the step of laminating a plurality of stator... |
| US-5,554,901 |
Servo-drive for rotary angle adjustment of an actuator for controlling
an opening cross-section of a medium... A known servo-drive including a stator which is formed with two-component design or the exciter winding has to be attached directly to the stator, which is... |
| US-5,554,900 |
Motor including embedded permanent-magnet rotor An electric motor including a permanent-magnet rotor having embedded magnets held in place by several segments. The embedded magnets are secured by segments... |
| US-5,554,899 |
Electric Actuator An electric actuator which is used for e.g. an arm of an industrial robot includes a composite shaft having a ball screw groove and a ball spline groove, a... |
| US-5,554,898 |
Rotary generator A rotary generator comprises a rotor within a stator having end windings, the rotor defining a flow path for cooling fluid which, during rotation of the rotor... |
| US-5,554,897 |
Downhold motor cooling and protection system The motor cooling and protection system has a shroud concentrically disposed about a motor housing of a downhole motor. The shroud is sealed from well fluids in... |
| US-5,554,896 |
Portable power supply for handpieces A portable power supply system utilizes a foot controller and a lightweight, sealed electric motor assembly which attaches to any International Standard... |
| US-5,554,895 |
Electronic latching circuit for momentary contact switches A switch circuit for activating and deactivating a motor vehicle cruise control includes a 555 model timer integrated circuit which has a trigger terminal, a... |
| US-5,554,894 |
Electronic footswitch for ophthalmic surgery A footswitch for ophthalmic surgery includes a rotatable foot pedal, a spring member which biases the foot pedal to resist rotation and an adjustment mechanism... |
| US-5,554,893 |
System for controlling semiconductor A device that provides a control system which is capable of positively preventing a semiconductor from suffering from latch up. In order to prevent this latch... |
| US-5,554,892 |
Signal processing circuit for switch capable of reducing insertion loss A high frequency power amplifier is implemented by a GaAs FET and is supplied with a positive and a negative power supply. The amplifier amplifies the power of... |
| US-5,554,891 |
Antitheft device for a vehicle An antitheft device for a vehicle such as a motorcycle or an automobile for preventing theft of the vehicle by controlling the ignition system of the vehicle.... |
| US-5,554,890 |
Ignition circuit for a squib in an air bag in a vehicle An object of the present invention is provide an ignition circuit for a squib in an air bag in a vehicle able to supply sufficient energy to ignite the squib... |
| US-5,554,889 |
Structure and method for metallization of semiconductor devices A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is... |
| US-5,554,888 |
Semiconductor device wiring structure A semiconductor device of a multilayer wiring structure provided with a bottom conductive layer and a top conductive layer connected through a pillar connection... |
| US-5,554,887 |
Plastic molded semiconductor package A pad electrode is formed on a main surface of a semiconductor chip. A passivation film, which covers a surface portion of the pad electrode, is formed on the... |
| US-5,554,886 |
Lead frame and semiconductor package with such lead frame A lead frame and a semiconductor package produced using the lead frame are disclosed. The lead frame has a plurality of multi-layered inner leads, each of the... |
| US-5,554,885 |
Semiconductor device including means for dispersing and absorbing
tensile forces acting on film tape A semiconductor device comprises an electrically insulating film having a device hole; a plurality of groups of leads, each group including of a large number of... |
| US-5,554,884 |
Multilevel metallization process for use in fabricating microelectronic
devices A multilevel metallization is deposited on a microelectronic device base structure (40). The process includes depositing a glassy dielectric layer (48) of a... |
| US-5,554,883 |
Semiconductor device and manufacturing method therefor A semiconductor device includes a buried impurity layer (3) formed at a predetermined depth from a main surface of a semiconductor substrate (1) by utilizing ion... |
| US-5,554,882 |
Integrated trigger injector for avalanche semiconductor switch devices An avalanche semiconductor switch device utilizes trigger input. The integrated trigger input is a charge carrier injector which injects charge carriers directly... |
| US-5,554,881 |
Constitution of an electrode arrangement in a semiconductor element At least four electrodes are provided on the same surface of a discrete transistor. Among these electrodes, one electrode is set as a base electrode, an... |
| US-5,554,880 |
Uniform current density and high current gain bipolar transistor The present invention discloses method for fabricating, and the structure of, a unique and novel bipolar transistor. The bipolar transistor of the present... |
| US-5,554,879 |
High voltage component having a low stray current A high voltage semiconductor component having a low stray current comprises a central region (N.sup.-) surrounded by P-type layers (P.sub.1, P.sub.2) forming... |
| US-5,554,878 |
Intergrated high-voltage resistor including field-plate layers A high-voltage resistor integrated on a semiconductor substrate with opposite sign conductivity, and being of a type with one end connected to the substrate and... |
| US-5,554,877 |
Compound semiconductor electroluminescent device An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part... |
| US-5,554,876 |
Field effect transistor including silicon oxide film and nitrided oxide
film as gate insulator film and... An N type field effect transistor having a higher resistivity to hot carriers and exhibiting a higher current handling capability even when used at a low gate... |
| US-5,554,875 |
Semiconductor device with force and/or acceleration sensor A semiconductor device with a force and/or acceleration sensor (12), which has a spring-mass system (14, 16) responsive to the respective quantity to be measured... |
| US-5,554,874 |
Six-transistor cell with wide bit-line pitch, double words lines, and
bit-line contact shared among four cells A static RAM memory is arranged into groups of four cells sharing a single active region with a contact to one of the bit lines. The shared active region forms... |
| US-5,554,873 |
Semiconductor device having polysilicon resistor with low temperature
coefficient A semiconductor device having a p type polysilicon resistor (56) with a moderate sheet resistance and low temperature coefficient of resistance is formed by a... |
| US-5,554,872 |
Semiconductor device and method of increasing device breakdown voltage
of semiconductor device In a semiconductor device including a composite substrate formed by bonding first and second semiconductor substrates to each other through an oxide film and an... |
| US-5,554,871 |
Semiconductor device having MOS transistor with nitrogen doping An MOS transistor capable of improving hot carrier resistance and a method of manufacturing thereof are provided. In the MOS transistor, nitrogen is introduced... |
| US-5,554,870 |
Integrated circuit having both vertical and horizontal devices and
process for making the same An integrated circuit (10) has a vertical device, such as a transistor (71), formed by epitaxial growth from a substrate (12) and a horizontal device, such as a... |
| US-5,554,869 |
Electrically programmable read-only memory array Flash EEPROM cells having merged select/control gates may be formed, so that the portions of the channel regions that correspond to select transistors are formed... |
| US-5,554,868 |
Non-volatile semiconductor memory device There is a case where a memory cell brought to an over-erase (depletion) state if the erasing time is too long, for example, in an electrically erasable... |
| US-5,554,867 |
Nonvolatile semiconductor memory device having a memory cell transistor
and a select transistor A nonvolatile semiconductor memory device is provided including a DINOR (Divided Bit Line NOR) type cell that allows further reduction of the cell size while... |
| US-5,554,866 |
Pre-oxidizing high-dielectric-constant material electrodes Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an... |
| US-5,554,865 |
Integrated transmit/receive switch/low noise amplifier with dissimilar
semiconductor devices A T/R switch/LNA for a radar's active array antenna includes dissimilar semiconductor devices in a monolithic microwave integrated circuit (MMIC). The devices... |
| US-5,554,864 |
Semiconductor device having improved coverage with increased wiring
layers In a semiconductor device having a multilayer wiring, first and second lower wiring sections are formed on a base insulating film. An interlayer insulating layer... |
| US-5,554,863 |
Gate turn-off thyristor A gate turn-off thyristor including: an n-type emitter semiconductor layer divided into a plurality of n-type areas; a p-type base semiconductor layer which... |
| US-5,554,862 |
Power semiconductor device In a power semiconductor device, an n-base is formed on a p-emitter layer. On the n-base layer, a p-base layer, an n-emitter layer, and a high-concentration... |
| US-5,554,861 |
Thin film transistors and active matrices including the same Thin file transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of between about 100 .ANG. and 2500... |
| US-5,554,860 |
Resonant tunneling transistor noise generator This is a method of generating noise comprising the step of switching a plurality of resonant tunneling diodes each located in the emitter or base of a multi... |
| US-5,554,859 |
Electron emission element with schottky junction This is an electron emission with a semiconductor substrate having a p-type semiconductor layer whose impurity concentration falls within a concentration range... |
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