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| Patent # | Description |
|---|---|
| US-5,568,004 |
Electromechanical positioning device An electromechanical positioning device to be used for positioning, for example, a probe-tip (12) in a scanning tunneling microscope, an electron emitter in a... |
| US-5,568,003 |
Method and apparatus for producing repeatable motion from biased
piezoelectric transducers A method and apparatus for producing a repeatable motion profile from a biased piezoelectric transducer (28) in which a first set of stored calibration voltage... |
| US-5,568,002 |
IIDT type surface acoustic wave device An IIDT type surface acoustic wave filter (41) comprising a piezoelectric substrate and at least three IDTs (44 to 46) which are arranged on a surface of the... |
| US-5,568,001 |
Saw device having acoustic elements with diverse mass loading and method
for forming same A surface acoustic wave device (100), includes a piezoelectric substrate (105) having a surface acoustic wave structure with an acoustic region (130). An... |
| US-5,568,000 |
Multiple pole, shaded pole subfractional-horsepower induction motor A multiple pole, shaded pole, subfractional-horsepower induction motor includes a two piece stator. Wound wire is mounted on one piece of the stator before final... |
| US-5,567,999 |
Bobbin structure for electromagnetic coil assembly A bobbin for use in an electric motor is formed in the nature of a clam shell, having two semi-cylindrical side portions which are joined together by a flexible... |
| US-5,567,998 |
Electric motor with rotor support means An electric motor includes a rotor having at one end a plastic journal bearing which is rotatably supported in an annular portion of a metallic bearing member... |
| US-5,567,997 |
Three-value power supply device and image forming apparatus utilizing
the same Disclosed is a three-value power supply device, adapted for supplying developing bias voltages to a copying machine. The device comprises a positive high voltage... |
| US-5,567,996 |
AC power supply unit An ac power supply unit includes first, second and third output terminals. A load is connectable selectively between any two of the output terminals. A dc... |
| US-5,567,995 |
Multi winding spiral generator A multiwinding spiral generator is capable of delivering any predetermined amount of energy at any predetermined voltage. The multiple spiral combines three... |
| US-5,567,994 |
Active harmonic filter with time domain analysis A hybrid active filter shunts three-phase power with passive elements tuned to have low impedance at a frequency of harmonic distortion. The passive elements are... |
| US-5,567,993 |
Programmable power supply system and methods A programmable power controller for controlling power between a primary power source and a second power source and powering first circuitry, each of which has a... |
| US-5,567,992 |
Arrangement for a cruise control system for a motor vehicle Control unit (1) for a cruise control system for a motor vehicle including at least one manually operated movable switch (4) for operating the cruise control... |
| US-5,567,991 |
Electric vehicle relay assembly using flexible circuit connector
coupling the relay to the relay circuit An electric vehicle relay assembly including a main relay and a flexible circuit electrically connected to the main relay. The relay assembly further includes a... |
| US-5,567,990 |
Resin-encapsulated semiconductor device A resin-encapsulated semiconductor which is free from the occurrence of blisters or cracks during soldering, suits for continuous production and has excellent... |
| US-5,567,989 |
Highly integrated semiconductor wiring structure In a highly integrated semiconductor wiring structure having a plurality of wiring layers and a self-aligned contact hole formed therebetween, the wiring layer... |
| US-5,567,988 |
Integrated circuit interconnect structure with back reflection
suppressing electronic "speed bumps" A polysilicon interconnect is formed on a microelectronic circuit substrate for conducting signals from a driver to a non-polycrystalline silicon contact which... |
| US-5,567,987 |
Semiconductor device having a multi-layer metallization structure The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half... |
| US-5,567,986 |
Heat sink A heat sink is provided wherein a heat receiving plate and at least one piece of heat radiating fin are stacked in the heat sink, and an interval between the... |
| US-5,567,985 |
Electronic apparatus with compliant metal chip-substrate bonding layer(s) Differences in thermal expansion properties between integrated circuit chips, especially of gallium arsenide, and the dielectric substrates (especially diamond... |
| US-5,567,984 |
Process for fabricating an electronic circuit package An electronic circuit package is fabricated by providing a substrate having attached to at least one of its major surfaces, at least one integrated circuit chip;... |
| US-5,567,983 |
Semiconductor apparatus capable of cooling a semiconductor element with
radiation efficiency A heat sink is attached to a semiconductor element functioning as an exothermic element, which is mounted on a circuit board and has a predetermined allowable... |
| US-5,567,982 |
Air-dielectric transmission lines for integrated circuits The present invention provides an interconnect structure which offers good mechanical stability and reduced charge concentration along the metal-insulator... |
| US-5,567,981 |
Bonding pad structure having an interposed rigid layer A bonding pad structure for use with compliant dielectric materials and a method for wire bonding is described in which a rigid layer is formed between the... |
| US-5,567,980 |
Native oxide of an aluminum-bearing group III-V semiconductor A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing... |
| US-5,567,979 |
Oriented ferroelectric thin-film element and manufacturing method
therefor A buffer layer having crystal orientation in a (111) face is formed on a semiconductor single-crystal (100) substrate and a ferroelectric thin film having... |
| US-5,567,978 |
High voltage, junction isolation semiconductor device having dual
conductivity tape buried regions and its... A two masking level process for a dual buried region epitaxial architecture forms a first masking layer on a surface of a P type substrate. The first masking... |
| US-5,567,977 |
Precision integrated resistor A precision resistor, on a semiconductor substrate, formed by using two polysilicon stripes to mask the oxide etch (and ion implantation) which forms a third... |
| US-5,567,976 |
Position sensing photosensor device photosensor device (41) having tapered photodiodes (53, 55) that are interdigitated and which is compatible with typical ASIC, CMOS and BiCMOS processes. A left... |
| US-5,567,975 |
Group II-VI radiation detector for simultaneous visible and IR detection A photovoltaic diode unit cell (10) includes a first layer (14) having a first type of electrical conductivity and a second layer (16) of Group II-VI material... |
| US-5,567,974 |
Semiconductor device to absorb stray carriers A photo IC having a plurality of photodiodes is disclosed. A semiconductor region to absorb stray carriers is provided between the photodiodes. Stray carriers... |
| US-5,567,973 |
Optical field-effect transistor with improved sensitivity An FET or MESFET having a semiconductor optically transparent gate. A substrate having a doped channel placed thereon together with a source and a drain with a... |
| US-5,567,972 |
Optical element mounted on a base having a capacitor imbedded therein An optical device is disclosed which comprises a base including a lower cylindrical base member having a common central line and a first diameter and having top... |
| US-5,567,971 |
Variable size light sensor element A sensor array includes includes multiple sensor elements that each have a collection electrode in contact with a photosensitive layer. The photosensitive layer... |
| US-5,567,970 |
Post metal mask ROM with thin glass dielectric layer formed over word
lines A ROM device includes cells with buried bit lines in a semiconductor substrate. A thin insulating layer covers the substrate has closely spaced, parallel, word... |
| US-5,567,969 |
Compound modulated integrated transistor structure with reduced bipolar
switch back effect Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field effect transistor... |
| US-5,567,968 |
Semiconductor device having SOI structure and method for fabricating the
same A pn diode as an electrostatic discharge protection element of a MOSFET in a semiconductor device having an SOI structure to enable large current to flow is... |
| US-5,567,967 |
Semiconductor device having a crystallized island semiconductor layer A semiconductor device comprises a transparent insulating substrate, a first insulating layer, a semiconductor layer, a second insulating layer, and an... |
| US-5,567,966 |
Local thinning of channel region for ultra-thin film SOI MOSFET with
elevated source/drain An elevated source/drain structure is described in which the channel region is thinned by local oxidation and wet etch while the source/drain region remained... |
| US-5,567,965 |
High-voltage transistor with LDD regions In a new high-voltage transistor, a gate electrode is formed on a semiconductor substrate of a first conductivity type by interposing a conductive layer over a... |
| US-5,567,964 |
Semiconductor device An object of the invention is to provide a capacitor having good anti-leak characteristics and good breakdown voltage characteristics. A transfer gate transistor... |
| US-5,567,963 |
Multi-bit data storage location A multi-bit data storage location 201 is formed at the face of a layer 502 of semiconductor of a first conductivity type. Storage location 201 includes a first... |
| US-5,567,962 |
Semiconductor memory device A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate... |
| US-5,567,961 |
Semiconductor device A semiconductor device may include a double hetero junction bipolar transistor and a field-effect transistor. The base of the bipolar transistor and the gate of... |
| US-5,567,960 |
II/VI-compound semiconductor light emitting device A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active... |
| US-5,567,959 |
Laminated complementary thin film transistor device with improved
threshold adaptability A combination of a lower thin film transistor formed on an insulating substrate and an upper thin film transistor laminated over the lower transistor has a lower... |
| US-5,567,958 |
High-performance thin-film transistor and SRAM memory cell A thin-film transistor and SRAM memory cell include thin-film source and drain regions (12, 14) separated by an opening (22) and overlying and insulating layer... |
| US-5,567,957 |
Segmented resistance layers with storage nodes Resistance layer structures comprised of a plurality of conductive charge storage nodes, collection electrodes, and an electrically controllable resistance... |
| US-5,567,956 |
Information processing apparatus including a photoelectric conversion
element having a semiconductor layer with... An information processing apparatus including a photoelectric conversion element having a photoelectric conversion section. The photoelectric conversion section... |
| US-5,567,955 |
Method for infrared thermal imaging using integrated gasa quantum well
mid-infrared detector and near-infrared... A far infrared (FIR) to near infrared (NIR) light converter is comprised of a quantum well intersubband photodetector (QWIP) integrated vertically with a light... |
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