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| Patent # | Description |
|---|---|
| US-7,524,794 |
Method for surface treating perlite sorbents for improved adsorbing of
vapor phase metals and metal compounds... Perlite, particularly, perlite in powdered form, is employed to adsorb metals and metal compounds from a fluid flow. In select embodiments, the perlite is... |
| US-7,524,793 |
Titanium dioxide photocatalyst containing carbon and method for its
production The invention relates to a titanium dioxide-based photocatalyst containing carbon that is highly photoactive in visible light (vlp-TiO.sub.2) and to a method of... |
| US-7,524,792 |
Preparation of catalytically active multielement oxide materials which
contain at least one of the elements Nb... Catalytically active multielement oxide materials which contain at least one of the elements Nb and W and the elements Mo, V and Cu are prepared by a process in... |
| US-7,524,791 |
Method for producing substrate having carbon-doped titanium oxide layer A method for producing a substrate having a carbon-doped titanium oxide layer, which is excellent in durability (high hardness, scratch resistance, wear... |
| US-7,524,790 |
Solid catalyst component for olefin polymerization, catalyst for olefin
polymerization and process for... A solid catalyst component for olefin polymerization in which the molar ratio of residual alkoxy groups to supported titanium is 0.60 or less is obtained by... |
| US-7,524,789 |
Process for producing modified particle, carrier or catalyst component for
addition polymerization,... A process for producing a modified particle, a carrier or a catalyst component for addition polymerization, which comprises the steps of (1) contacting a... |
| US-7,524,788 |
Process for the alkylation of aromatic compounds Process for preparing alkylated aromatic compounds which comprises reacting an aromatic compound with a ketone and hydrogen in the presence of a catalytic... |
| US-7,524,787 |
Producing supported cobalt catalysts for the Fisher-Tropsch synthesis A process for producing a supported Fischer-Tropsch catalyst includes treating, in an activation stage (12), a particulate pre-reduction cobalt nitrate-based... |
| US-7,524,786 |
Regeneration of synthesis gas catalysts The present invention relates to a process for the preparation of synthesis gas (i.e., a mixture of carbon monoxide and hydrogen), typically labeled syngas. More... |
| US-7,524,785 |
Cubic boron nitride sintered body The present invention provides a cubic boron nitride sintered body, which achieves both of superior chipping resistance and wear resistance. In accordance with a... |
| US-7,524,784 |
Glasses for flat panel displays Glasses are disclosed which are used to produce substrates in flat panel display devices. The glasses exhibit a density less than about 2.45 gm/cm.sup.3 and a... |
| US-7,524,783 |
Glass for laser processing Titanium is added in the form of atoms, a colloid, or ions to a glass to be subjected to laser processing in which the ablation or vaporization caused by the... |
| US-7,524,782 |
Large transmissive optical component An optical glass for the manufacture of large transmission optics, such as lenses having a thickness of 100 millimeters or more, comprises 35 to 70 wt.-%... |
| US-7,524,781 |
Non-lead optical glass and optical fiber A non-lead optical glass consisting essentially of, as represented by mol %, from 45 to 75% of Bi.sub.2O.sub.3, from 12 to 45% of B.sub.2O.sub.3, from 1 to 20%... |
| US-7,524,780 |
Low loss optical fiber and method for making same A method of forming an alkali metal oxide-doped optical fiber by diffusing an alkali metal into a surface of a glass article is disclosed. The silica glass... |
| US-7,524,779 |
Microspheres having a high index of refraction The present invention relates to microspheres (i.e., beads) having a high index of refraction. The invention also relates to retroreflective articles, and in... |
| US-7,524,778 |
Composite sheet material A sheet product is provided which comprises a scrim embedded in a continuous layer of a foamed resin. The sheet material is useful as a drawer liner or a shelf... |
| US-7,524,777 |
Method for manufacturing an isolation structure using an energy beam
treatment The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include... |
| US-7,524,776 |
Surface-activation of semiconductor nanostructures for biological
applications Means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to... |
| US-7,524,775 |
Method for producing a dielectric layer for an electronic component A method for producing a dielectric layer extending between two or more elements of an electronic component includes arranging a free-standing dielectric layer... |
| US-7,524,774 |
Manufacturing method of semiconductor device, semiconductor manufacturing
apparatus, plasma nitridation method,... An object of the present invention is to prevent an increase in film thickness and inhibit a reduction in capacity of a capacitor. In a semiconductor device... |
| US-7,524,773 |
Anti-reflective substrate and the manufacturing method thereof The present invention is to provide an anti-reflective substrate, and the manufacturing method of the substrate. The method comprises the steps of: (a) providing... |
| US-7,524,772 |
Pattern formation method After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with... |
| US-7,524,771 |
Substrate processing method using alkaline solution and acid solution Particles adhering to the surface of a substrate are removed by physical action of injection of droplets or megasonic vibrations or by combination of the... |
| US-7,524,770 |
Methods of forming image sensor microlens structures In one aspect, an image sensor is provided which includes an interlayer insulation film formed over a substrate including a light receiving device, a color... |
| US-7,524,769 |
Method and system for removing an oxide from a substrate A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon,... |
| US-7,524,768 |
Method using monolayer etch masks in combination with printed masks A method to pattern films into dimensions smaller than the printed pixel mask size. A printed mask is deposited on a thin film on a substrate. The second mask... |
| US-7,524,767 |
Method for manufacturing a micro-electro-mechanical structure A technique for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided. Next, a plurality of... |
| US-7,524,766 |
Method for manufacturing semiconductor device and substrate processing
apparatus To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as... |
| US-7,524,765 |
Direct tailoring of the composition and density of ALD films A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic... |
| US-7,524,764 |
Method of forming film pattern, device, method of manufacturing the same,
electro-optical apparatus, and... A method of forming a film pattern by disposing a functional liquid on a substrate, includes: forming banks on the substrate; disposing the functional liquid in... |
| US-7,524,763 |
Fabrication method of wafer level chip scale packages A method of fabricating wafer level chip scale packages may involve forming a hole to penetrate through a chip pad of an IC chip. A base metal layer may be... |
| US-7,524,762 |
Atomic layer deposition of tantalum-containing materials using the
tantalum precursor TAIMATA In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing... |
| US-7,524,761 |
Method for manufacturing semiconductor device capable of reducing
parasitic bit line capacitance A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a... |
| US-7,524,760 |
Semiconductor device and method for manufacturing the same A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes a semiconductor substrate having a conductive... |
| US-7,524,759 |
Post passivation interconnection schemes on top of IC chip A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor... |
| US-7,524,758 |
Interconnect structure and method for semiconductor device An interconnect method in a semiconductor device may include a step of examining various regions of an inter layer dielectric to identify regions having high... |
| US-7,524,757 |
Method for manufacturing multi-level transistor comprising forming
selective epitaxial growth layer A method for manufacturing a multi-level transistor on a substrate. The method includes forming a first transistor on a first active region, forming a first... |
| US-7,524,756 |
Process of forming a semiconductor assembly having a contact structure and
contact liner A contact structure and a method of forming thereof for semiconductor devices or assemblies are described. The method provides process steps to create a contact... |
| US-7,524,755 |
Entire encapsulation of Cu interconnects using self-aligned CuSiN film A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor... |
| US-7,524,754 |
Interconnect shunt used for current distribution and reliability
redundancy In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to... |
| US-7,524,753 |
Semiconductor device having through electrode and method of manufacturing
the same A method of manufacturing a semiconductor device having a through electrode, includes forming through holes 36 in a substrate 31, forming a first metal layer 39... |
| US-7,524,752 |
Method of manufacturing semiconductor device In a method of manufacturing a semiconductor device which method is made up of a process of forming a wiring groove using a hard mask, a metal hard mask 107 is... |
| US-7,524,751 |
Method for forming contact hole in semiconductor device Methods for forming a contact hole in a semiconductor device are provided. An exposed portion of an isolation layer, which may be generated during a process of... |
| US-7,524,750 |
Integrated process modulation (IPM) a novel solution for gapfill with
HDP-CVD A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent... |
| US-7,524,749 |
Metallization method of semiconductor device A method for forming a metallization contact in a semiconductor device includes (a) forming an insulating layer on a semiconductor substrate including an active... |
| US-7,524,748 |
Method of interconnecting terminals and method of mounting semiconductor
devices A method of interconnecting terminals so as to obtain an excellent electrical connection between terminals such as opposing electrodes and a mounting method for... |
| US-7,524,747 |
Floating gate memory device and method of manufacturing the same Disclosed herein is a method of forming a floating gate in a non-volatile memory device having a self-aligned shallow trench isolation (SA-STI) structure. First,... |
| US-7,524,746 |
High-refractive index materials comprising semiconductor nanocrystal
compositions, methods of making same, and... A high-refractive index material that includes semiconductor nanocrystal compositions. The high-refractive index material has at least one semiconductor... |
| US-7,524,745 |
Method and device for doping, diffusion and oxidation of silicon wafers
under reduced pressure Method and device for doping or diffusion, or oxidation of silicon wafers (4), the wafers being introduced into the chamber (2) of an oven (1) wherein is... |
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