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Patent # Description
US-7,531,404 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer...
US-7,531,403 SOI semiconductor components and methods for their fabrication
SOI semiconductor components and methods for their fabrication are provided wherein the SOI semiconductor components include an MOS transistor in the supporting...
US-7,531,402 Method of manufacturing semiconductor device with offset sidewall structure
A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can...
US-7,531,401 Method for improved fabrication of a semiconductor using a stress proximity technique process
An improved method for applying stress proximity technique process on a semiconductor device and the improved device is disclosed. In one embodiment, the method...
US-7,531,400 Methods for fabricating MOS transistor gates with doped silicide
Semiconductor devices and fabrication methods are presented, in which transistor gate structures are created using doped metal silicide materials. Upper and...
US-7,531,399 Semiconductor devices and methods with bilayer dielectrics
A semiconductor device is disclosed that includes: a substrate; a first high-k dielectric layer; a second high-k dielectric layer formed of a different high-k...
US-7,531,398 Methods and devices employing metal layers in gates to introduce channel strain
A semiconductor device is fabricated having a metal stress inducing layer that facilitates channel mobility. A gate dielectric layer is formed over a...
US-7,531,397 Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward...
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN...
US-7,531,396 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device is disclosed. The semiconductor device includes a semiconductor body of a first conductivity type, a hetero...
US-7,531,395 Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors
Methods of forming layers comprising epitaxial silicon, and methods of forming field effect transistors are disclosed. A method of forming a layer comprising...
US-7,531,394 Manufacturing method for a TFT LCD array substrate
The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off...
US-7,531,393 Non-planar MOS structure with a strained channel region
An embodiment is a non-planar MOS transistor structure including a strained channel region. The combination of a non-planar MOS transistor structure, and in...
US-7,531,392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same
The present invention relates to semiconductor-on-insulator (SOI) substrate structures that contain surface semiconductor regions of different crystal...
US-7,531,391 CMOS image sensor and method for manufacturing the same
A CMOS image sensor includes a semiconductor substrate with a first conductive type including a photodiode region and a transistor region, a gate electrode...
US-7,531,390 Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a...
US-7,531,389 Method of manufacturing semiconductor device
Disclosed herein is a method of manufacturing a semiconductor device having a thyristor formed by joining a first p-type semiconductor layer, a first n-type...
US-7,531,388 Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding...
Electrically programmable fuse structures and methods of fabrication thereof are presented, wherein a fuse includes first and second terminal portions...
US-7,531,387 Flip chip mounting method and bump forming method
A flip chip mounting method which is applicable to the flip chip mounting of a next-generation LSI and high in productivity and reliability as well as a bump...
US-7,531,386 Semiconductor package
There is provided a semiconductor package including: a substrate having a plurality of electrode pads on a surface thereof; a semiconductor chip mounted on the...
US-7,531,385 Flip chip mounting method and method for connecting substrates
A flip chip mounting method which is applicable to the flip chip mounting of a next-generation LSI and high in productivity and reliability as well as a method...
US-7,531,384 Enhanced interconnect structure
The present invention provides a semiconductor interconnect structure with improved mechanical strength at the capping layer/dielectric layer/diffusion barrier...
US-7,531,383 Array quad flat no-lead package and method of forming same
An array QFN package (10) includes a first semiconductor package (12) and a lead frame (14) having a plurality of leads (16). A first IC die (22) is attached on...
US-7,531,382 Method of fabricating a patterned device using sacrificial spacer layer
A method of creating a patterned device by selecting a substrate; depositing a mask layer on the substrate; forming a first step on the mask layer; depositing a...
US-7,531,381 Manufacturing method of a quad flat no-lead package structure
The present invention provides a method for fabricating a quad flat no-lead package structure, comprising a chip carrier and at least a chip. The chip is...
US-7,531,380 Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing...
A light-emitting device comprises a substrate that has a contact plug extending therethrough between first and second opposing surfaces. An active region is on...
US-7,531,379 Method of forming CMOS imager with capacitor structures
A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are...
US-7,531,378 Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element
An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many...
US-7,531,377 Optical device
A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge...
US-7,531,376 Array substrate for transflective liquid crystal display device and a fabricating method thereof
A fabricating method of an array substrate for a transflective liquid crystal display device includes forming a gate line on a substrate having a display portion...
US-7,531,375 Solid image-pickup device and method for manufacturing the solid image pickup device
It is an object of the invention to provide an improved solid image-pickup device which is compact in size and low in production cost. The solid image-pickup...
US-7,531,374 CMOS image sensor process and structure
A CMOS image sensor (CIS) process is described. A semiconductor substrate is provided, and then a gate dielectric layer, a gate material layer and a thickening...
US-7,531,373 Methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry
A method of forming conductive interconnects includes forming a node of a circuit component on a substrate. A conductive metal line is formed at a first metal...
US-7,531,372 Method for manufacturing array substrate for liquid crystal display device
A method of fabricating an array substrate includes forming a buffer layer on a metal substrate, forming a thin film transistor including a gate electrode, a...
US-7,531,371 Multisurfaced microdevice system array and a method of producing the array
A multisurfaced microdevice system array is produced from a wafer formed of semiconductor substrate material. Sensing, controlling and actuating microdevices are...
US-7,531,370 Light-emitting diode and its manufacturing method
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion...
US-7,531,369 Process endpoint detection method using broadband reflectometry
A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from...
US-7,531,368 In-line lithography and etch system
The invention can provide a method of processing a wafer using Site-Dependent (S-D) processing sequences that can include S-D creation procedures, S-D evaluation...
US-7,531,367 Utilizing sidewall spacer features to form magnetic tunnel junctions in an integrated circuit
Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention,...
US-7,531,366 Bead based assays using a liquid crystal reporter
The present invention relates to the field of detection of analytes, and in particular to detection of viruses, cells, bacteria, lipid-membrane containing...
US-7,531,365 Analysis of the headspace proximate a substrate surface containing fragrance-containing microcapsules
Described is apparatus and a process for the enablement of functional product analysis of the headspace proximate one or more substrate, such as hair, fabric or...
US-7,531,364 Clinical method for the genetic screening of newborns using tandem mass spectrometry
A method for screening newborns using electrospray tandem mass spectrometry. The method improves the current protocols that use tandem mass spectrometry by...
US-7,531,363 Particle detection using fluorescence
Detection systems and methods for capturing and analyzing particles within a particle sample are provided. The detection system may include, for example, a...
US-7,531,362 Rapid diagnostic assay
An improved rapid diagnostic device, assay and multifunctional buffer reagent are provided for the detection of a target analyte in a fluid test sample. The...
US-7,531,361 Coloration agent for carbonyl sulfide, detecting means and fuel cell system
Provided are a coloration agent for carbonyl sulfide which contains a metal oxide, and at least one metal component selected from among a cerium component, a...
US-7,531,360 Method of dechlorination treatment of flowing water, in particular upstream of a biological pollution detector
A selective method of dechlorination treatment of circulating water containing disinfectant chlorine in the form of ClO.sup.-,HClO, ClO.sub.2 or chloramine,...
US-7,531,359 Cavitands for chemical vapor sensing
The chemical compound: ##STR00001## Each R.sup.1 is H or CH.sub.3. A device for detecting an analyte having: a substrate; a film on the substrate, a flow cell...
US-7,531,358 Method of quantifying surfactant
A method of quantifying an ethylene oxide based nonionic surfactant in a sample containing a physiologically active protein, characterized in that quantitation...
US-7,531,357 Preparation of platelet analogs
Erythrocytes from a vertebrate animal other than a human that have been size reduced and treated with a fixing agent by conventional methods to resemble human...
US-7,531,356 Promoter sequences for corticotropin releasing-factor receptor CRF2.alpha. and method of identifying agents...
The DNA sequences of human and rat CRF.sub.2.alpha. receptor promoters are disclosed. Certain functional fragments of the human CRF.sub.2.alpha. receptor...
US-7,531,355 Methods and compositions for smooth muscle reconstruction
This invention also provides a purified or isolated population of ADSCs that can differentiate into a cell of the leiomyogenic lineage, e.g., smooth muscle or...
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