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Patent # Description
US-9,564,585 Multi-level phase change device
Embodiments of the present disclosure generally relate to electronic devices, and more specifically, to multi-level phase change devices. In one embodiment, a...
US-9,564,584 Electronic device and method for fabricating the same
An electronic device includes a semiconductor device that includes: a substrate including a switching element having a buried gate electrode; a buried...
US-9,564,583 Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide...
A memory element includes an amorphous thin-film that is between a first electrode and a second electrode in which at least one of the first electrode and the...
US-9,564,582 Method of forming magnetic tunneling junctions
A method for fabricating an MRAM bit that includes depositing a spacer layer that protects the tunneling barrier layer during processing is disclosed. The...
US-9,564,581 Magnetoresistive effect devices having enhanced magnetic anisotropy
Embodiments of the present disclosure generally relate to memory devices having enhanced perpendicular magnetic anisotropy. The memory device includes a...
US-9,564,580 Double synthetic antiferromagnet using rare earth metals and transition metals
A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic...
US-9,564,579 Graphene magnetic tunnel junction spin filters and methods of making
A Tunnel Magnetic Junction of high magnetoresistance is prepared at temperatures and pressure consistent with Si CMOS fabrication and operation. A first metal...
US-9,564,578 Semiconductor package with integrated magnetic field sensor
A semiconductor package includes a semiconductor die attached to a substrate and a magnetic field sensor included as part of the same semiconductor package as...
US-9,564,577 MRAM device and fabrication method
A magnetoresistive random access memory (MRAM) device comprises a bottom electrode over a tapered bottom via, a tapered magnetic tunnel junction (MTJ) over the...
US-9,564,576 Multi-bit ferroelectric memory device and methods of forming the same
Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can...
US-9,564,575 Dual encapsulation integration scheme for fabricating integrated circuits with magnetic random access memory...
Integrated circuits with magnetic random access memory (MRAM) and dual encapsulation for double magnesium oxide tunnel barrier structures and methods for...
US-9,564,574 Piezoelectric device and method for manufacturing piezoelectric device
In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate...
US-9,564,573 Trilayer josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits
A technique relates to a trilayer Josephson junction structure. A dielectric layer is on a base electrode layer that is on a substrate. A counter electrode...
US-9,564,572 Thermally driven power generator
A thermally driven power generator having a base and a heat source placed within the base. The thermally driven power generator further having a heat collector...
US-9,564,571 Electronic device having thermoelectric conversion module
An electronic device includes a main body and a thermoelectric conversion module. The main body has a heat generating element therein. The thermoelectric...
US-9,564,570 Thermoelectric module with thermal expansion compensation, method for producing a thermoelectric module and...
A thermoelectric module extends in a longitudinal direction and includes an outer tube, an inner tube disposed within the outer tube and an interspace between...
US-9,564,569 Hermetic solution for thermal and optical sensor-in-package
A sensor-in-package device, a process for fabricating a hermetically-sealed sensor-in-package device, and a process for fabricating a hermetically-sealed...
US-9,564,568 Flexible LED device with wire bond free die
An article includes a flexible polymeric dielectric layer having first and second major surfaces. The first major surface has a conductive layer thereon and at...
US-9,564,567 Light emitting device package and method of fabricating the same
A light emitting device package and a method of manufacturing the light emitting device package are provided. A base is first provided and a hole is formed on...
US-9,564,566 Optoelectronic component and method for the production thereof
An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the...
US-9,564,565 Light emitting device, light emitting module, and method for manufacturing light emitting device
A light emitting device includes a light emitting element, a first terminal, a second terminal, and a light reflecting member. The first terminal and the second...
US-9,564,564 Light emitting device and lighting apparatus having the same
Disclosed are a light emitting device. The light emitting device include first and second lead frames, a first body on the first and second lead frames and...
US-9,564,563 Improving display contrast
There is herein described electronic components with improved display contrast and a method of manufacturing such electronic components. More particularly,...
US-9,564,562 Silicone composition for sealing semiconductor
The silicone composition for sealing a semiconductor, comprises: (A) 100 parts of a polyorganosiloxane having one or more alkenyl groups, obtained by reacting...
US-9,564,561 Light emitting device
The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that...
US-9,564,560 Optoelectronic component
An optoelectronic component includes a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less...
US-9,564,559 White emitting light source and luminescent material
The invention relates to a white emitting light source with an improved luminescent material of the formula ...
US-9,564,558 Fluoride fluorescent material and light emitting device using the same
The present invention provides a fluoride fluorescent material comprising a chemical composition represented by the following formula (I): ...
US-9,564,557 LED based device with wide color gamut
The invention provides a lighting unit comprising a source of blue light, a source of green light, a first source of red light comprising a first red...
US-9,564,556 Light emitting device and method for fabricating the same
Embodiments of a light emitting device and a method for fabricating the same are provided. The light emitting device comprises a cavity and one or more light...
US-9,564,555 Opto-electronic semiconductor module and method for the production thereof
An optoelectronic semiconductor module includes a chip carrier, a light emitting semiconductor chip mounted on the chip carrier and a cover element with an at...
US-9,564,554 Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same
A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a...
US-9,564,553 Power light emitting diode and method with uniform current density operation
A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick...
US-9,564,552 Method for producing group III nitride semiconductor light-emitting device
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance. In a MQW structure...
US-9,564,551 Method of manufacturing a hybrid emitter all back contact solar cell
A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside...
US-9,564,550 Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a...
According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least...
US-9,564,549 Germainium pin photodiode for integration into a CMOS or BICMOS technology
A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces,...
US-9,564,548 Direct wafer bonding
The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and...
US-9,564,547 Solar cell module and method of manufacturing the same
A solar cell module and a method of manufacturing the same are discussed. The solar cell module includes a plurality of back contact solar cells, an...
US-9,564,546 Interconnector
An interconnector for electrically connecting a first electronic device element and a second electronic device element includes first and second connection...
US-9,564,545 Photovoltaic sheathing element with one or more tabs
The present invention is premised upon an assembly that includes at least a photovoltaic sheathing element capable of being affixed on a building structure. The...
US-9,564,544 Solar cell module production method
A solar cell production method, whereby: a plurality of solar cell strings connecting a prescribed number of solar cells in series are formed; a plurality of...
US-9,564,543 Doping an absorber layer of a photovoltaic device via diffusion from a window layer
Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer...
US-9,564,542 Selective transformation in functional films, and solar cell applications thereof
A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical...
US-9,564,541 Diode with insulated anode regions
A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly...
US-9,564,540 Method of manufacturing semiconductor device and semiconductor device
An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an...
US-9,564,539 Display device and semiconductor device
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation...
US-9,564,538 Semiconductor device
A semiconductor device includes a first insulating layer having a first side wall, an oxide semiconductor layer located on the first side wall, a gate...
US-9,564,537 Array substrate and method for manufacturing the same
Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A...
US-9,564,536 Self-aligned metal oxide thin-film transistor component and manufacturing method thereof
The present invention is applicable to the field of electronic component technologies and provides a manufacturing method of a self-aligned metal oxide TFT...
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