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Patent # Description
US-9,564,484 Metal-insulator-metal back end of line capacitor structures
Embodiments of the present invention provide improved metal-insulator-metal (MIM) capacitors. In embodiments, series resistance is reduced by forming a via...
US-9,564,483 Display device and manufacturing method thereof
A display device comprises a base substrate, a first metal layer formed over the base substrate, an interlayer insulating layer formed over the first metal...
US-9,564,482 Display device and electronic apparatus
A display device includes a pixel section that includes a plurality of pixels each of which has a display element and which are disposed in a two-dimensional...
US-9,564,481 Fully-printed carbon nanotube thin film transistor circuits for organic light emitting diode
The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of...
US-9,564,480 Organic light emitting display device and manufacturing method thereof
A method of fabricating an organic light emitting display device is discussed. The method in one example includes: sequentially forming a first metal film and a...
US-9,564,479 Flexible display
A flexible display includes a driving circuit to drive a light emitting device. The driving circuit includes a thin film transistor which includes a...
US-9,564,478 Liquid crystal displays with oxide-based thin-film transistors
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display...
US-9,564,477 Flexible display device and method of fabricating the same
A flexible display device includes a substrate, a plurality of first pixels, and a plurality of second pixels. The substrate includes a foldable bending region...
US-9,564,476 Organic light emitting diode display
An organic light emitting display device comprises a common voltage line formed over a peripheral region of a substrate; a passivation layer formed over a pixel...
US-9,564,475 Display device with separation member including steps
A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction...
US-9,564,474 TFT substrate, method for producing same, organic EL display device, and method for manufacturing organic EL...
A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method including: forming...
US-9,564,473 Display device
Display of a display device is made less likely to appear divided when a plurality of display panels are used as one screen. Provided is a display device...
US-9,564,472 Light-emitting device
There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL...
US-9,564,471 Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components,...
A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The stack has a primary portion...
US-9,564,470 Hard mask as contact etch stop layer in image sensors
A method of image sensor fabrication includes forming a layer of dielectric material, a layer of gate material, and a layer of hard mask material. The layer of...
US-9,564,469 Image sensor comprising a color separation device separating incident light into plural of colors for having...
An image sensor including a color filter array layer, which includes a plurality of color filters transmitting light of different colors; and reflective...
US-9,564,468 Composite grid structure to reduce crosstalk in back side illumination image sensors
A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid...
US-9,564,467 Solid-state imaging device with suppression of color mixture, manufacturing method thereof, and electronic...
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion...
US-9,564,466 Semiconductor device and manufacturing method thereof
Provided is a semiconductor device with improved performance. The semiconductor device includes a photodiode having a charge storage layer (n-type semiconductor...
US-9,564,465 Solid-state imaging apparatus, manufacturing method therefor, and electronic apparatus
The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can...
US-9,564,464 Monolithically stacked image sensors
An imaging system may be formed from multiple stacked wafers. A first wafer may include backside illuminated photodiodes, floating diffusion regions, and charge...
US-9,564,463 Methods of fabricating image sensors having deep trenches including negative charge material
Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the...
US-9,564,462 Image-sensor structures
An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate,...
US-9,564,461 Radiation image-pickup device and radiation image-pickup display system
A radiation image-pickup device includes: a drive substrate including a transistor used to read, from each of a plurality of pixels, signal charge based on...
US-9,564,460 Thin-film transistor and its manufacturing method, array substrate and display device
A manufacturing method of a thin film transistor comprises: sequentially forming a pattern of gate, a gate insulation layer film, an active layer film and an...
US-9,564,459 Liquid crystal display panel and method for manufacturing liquid crystal display panel
The organic insulating film has an opening through which the drain electrode is partially exposed. The opening has a side wall extending from above the drain...
US-9,564,458 TFT substrates and the manufacturing method thereof
A TFT substrate and the manufacturing method thereof are disclosed. The method includes: providing a substrate; forming a gate electrode on the substrate;...
US-9,564,457 Method for manufacturing semiconductor device
To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate...
US-9,564,456 Array substrate and display device using the same
An array substrate includes: a gate wiring; a source wiring, which is formed to intersect the gate wiring; a passivation film, which covers the source wiring;...
US-9,564,455 Display panel
A display panel is provided. The display panel includes has an active area and a border area surrounding the active area. The display panel includes a plurality...
US-9,564,454 TFT array substrate, display panel and display device
A TFT array substrate having compensated gate signal delays is disclosed. The TFT array substrate includes a plurality of gate lines, a plurality of data lines...
US-9,564,453 Array substrate and display device
An array substrate and a display device are provided, and the array substrate, comprising: a substrate; and gate lines (2) and data lines (1), formed on the...
US-9,564,452 Fabrication of hybrid semiconductor circuits
A method is disclosed for fabricating a semiconductor circuit. A semiconductor substrate is provided. A first semiconductor device is fabricated including a...
US-9,564,451 Semiconductor device and manufacturing method thereof
A semiconductor device may include a substrate, conductive patterns stacked to be spaced apart from each other on the substrate, contact plugs coming in contact...
US-9,564,450 Nonvolatile semiconductor memory device and method of manufacturing the same
According to one embodiment, a memory device includes first and second fin type stacked structures each includes first to i-th memory strings (i is a natural...
US-9,564,449 Semiconductor device and method of forming a semiconductor device
A semiconductor device is provided, which may include: a well of a first conductivity type located within a substrate of a second conductivity type; a well...
US-9,564,448 Flash memory structure
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a control gate formed over the substrate. The...
US-9,564,447 Methods for fabricating programmable devices and related structures
Methods and structures for programmable device fabrication are provided. The methods for fabricating a programmable device include, for example forming at least...
US-9,564,446 SRAM design to facilitate single fin cut in double sidewall image transfer process
A double sidewall image transfer process for forming FinFET structures having a fin pitch of less than 40 nm generates paired fins with a spacing determined by...
US-9,564,445 Dummy gate structure for electrical isolation of a fin DRAM
Trench capacitors can be formed between lengthwise sidewalls of semiconductor fins, and source and drain regions of access transistors are formed in the...
US-9,564,444 Method of forming integrated fin and strap structure for an access transistor of a trench capacitor
At least one dielectric pad layer is formed on a semiconductor-on-insulator (SOI) substrate. A deep trench is formed in the SOI substrate, and a combination of...
US-9,564,443 Dynamic random access memory cell with self-aligned strap
After formation of trench capacitors and source and drain regions and gate structures for access transistors, a dielectric spacer is formed on a first sidewall...
US-9,564,442 Methods of forming contacts for a semiconductor device structure, and related methods of forming a...
A method of forming contacts for a semiconductor device structure comprises forming contact holes extending into neighboring semiconductive pillars and into a...
US-9,564,441 Two-transistor SRAM semiconductor structure and methods of fabrication
A two-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can...
US-9,564,440 Spacer chamfering gate stack scheme
A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are...
US-9,564,439 Structure and method for advanced bulk fin isolation
A non-planar semiconductor structure containing semiconductor fins that are isolated from an underlying bulk silicon substrate by an epitaxial semiconductor...
US-9,564,438 Semiconductor structure containing semiconductor fins and insulating fence fins on a same substrate
A semiconductor structure may be formed by forming a first semiconductor fin and a second inactive semiconductor fin above a substrate; depositing a masking...
US-9,564,437 Method and structure for forming FinFET CMOS with dual doped STI regions
A method of making a semiconductor device includes forming a first fin of a first transistor in a substrate; forming a second fin of a second transistor in the...
US-9,564,436 Semiconductor device
A semiconductor device is described, including a substrate including a first area and a second area, a first MOS element of a first conductivity type in the...
US-9,564,435 Semiconductor device including FinFETs having different gate structures and method of manufacturing the...
A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O...
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